Datasheet ipb60r299cpa Datasheet

IPB60R299CPA

not recommended

for new designs

CoolMOSTM Power Transistor

Product Summary

V

DS

R

DS(on),max

Q

g,typ

600 V

0.299

22 nC

Features

• Lowest figure-of-merit R

• Ultra low gate charge

on

x Q

g

PG-TO263-3

• Extreme dv/dt rated

• High peak current capability

• Automotive AEC Q101 qualified

• Green package (RoHS compliant)

CoolMOS CPA is specially designed for:

• DC/DC converters for Automotive Applications

Ω

Type Package Marking

IPB60R299CPA PG-TO263-3 6R299A

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, repetitive t Avalanche current, repetitive t MOSFET dv/dt ruggedness dv/dt

Gate source voltage

Power dissipation

=25 °C, unless otherwise specified

j

I

D

T T

1)

AR

1),2)

I

D,pulse

E

AS

E

AR

I

AR

T ID=4.4 A, V ID=4.4 A, V

V

GS

P

tot

static V

T

=25 °C

C

=100 °C

C

=25 °C

C

=0...480 V

DS

=25 °C

C

DD

=50 V

Value

11

7

34

290 mJ

0.44

4.4

50

±20

96

A

V/ns

W

Operating temperature

Storage temperature

T

j

T

stg

-40 ... 150

°C

Rev. 2.0 page 1 2009-09-09

IPB60R299CPA

not recommended

for new designs

Maximum ratings, at T

=25 °C, unless otherwise specified

j

Parameter Symbol Conditions Unit

Continuous diode forward current

Diode pulse current

Reverse diode dv/dt

1)

3)

I

S

I

S,pulse

dv/dt

T

C

=25 °C

Parameter Symbol Conditions Unit

Thermal characteristics

Thermal resistance, junction - case

R

thJC

SMD version, device

R

thJA

Thermal resistance, junction ambient

on PCB, minimal footprint

SMD version, device

on PCB, 6 cm

4)

area

2

cooling

Value

6.6

34

15 V/ns

Values

min. typ. max.

- - 1.3 K/W

--62

-35-

A

Soldering temperature, reflow soldering

Electrical characteristics, at T

=25 °C, unless otherwise specified

j

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

T

sold

V

(BR)DSSVGS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

MSL 1 - - 245 °C

=0 V, I

VDS=VGS, I

VDS=600 V, V T

=25 °C

j

VGS=20 V, V VGS=10 V, I

T

=25 °C

j

V

=10 V, I

GS

T

=150 °C

j

=250 µA

D

=0,44 mA

D

=0 V,

GS

=0 V

DS

=6.6 A,

D

=6.6 A,

D

600 - - V

2.5 3 3.5

--1µA

- - 100 nA

- 0.27 0.299

Ω

- 0.73

Gate resistance

R

G

f=1 MHz, open drain

- 1.9 -

Ω

Rev. 2.0 page 2 2009-09-09

IPB60R299CPA

not recommended

for new designs

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Effective output capacitance, energy

Effective output capacitance, time

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Charge Characteristics

C C

C

t t t t

iss

oss

o(er)

o(tr)

d(on)

r

d(off)

f

V

=0 V, V

GS

f=1 MHz

=0 V, V

V

GS

to 480 V

V

=400 V,

DD

V

=10 V, I

GS

=4.3 Ω

R

G

=100 V,

DS

=0 V

DS

=6.6 A,

D

- 1100 - pF

-60-

-46-

- 120 -

-10-ns

-5-

-40-

-5-

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Q Q Q V

gs

gd

g

plateau

=400 V, I

V

DD

V

=0 to 10 V

GS

Reverse Diode

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

1)

Pulse width tp limited by T

2)

Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.

3)

ISD≤ID, di/dt≤200A/µs, V

4)

Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection.

PCB is vertical without blown air.

5)

C

is a fixed capacitance that gives the same stored energy as C

o(er)

6)

C

is a fixed capacitance that gives the same charging time as C

o(tr)

j,max

DClink

=400V, V

V

SD

t

rr

Q

rr

I

rrm

peak<V(BR)DSS

VGS=0 V, I T

=25 °C

j

VR=400 V, IF=I

di

/dt=100 A/µs

F

, Tj<T

jmax

-5-nC

=6.6 A,

D

- 7.6 -

-2229

- 5.0 - V

=6.6 A,

F

- 0.9 1.2 V

- 300 - ns

,

S

- 3.9 - µC

-26-A

, identical low side and high side switch.

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

DSS.

Rev. 2.0 page 3 2009-09-09

1 Power dissipation 2 Safe operating area

not recommended

for new designs

=f(TC) ID=f(VDS); TC=25 °C; D=0

P

tot

parameter: t

p

IPB60R299CPA

100

75

[W]

50

tot

P

25

0

0 40 80 120 160

TC [°C]

3 Max. transient thermal impedance 4 Typ. output characteristics

[A]

D

I

10

2

1

0

-1

limited by on-state resistance

0

10

1

DC

VDS [V]

1 ms

10

10 µs

100 µs

10 ms

2

1 µs

10

3

=f(tP) ID=f(VDS); T

Z

thJC

parameter: D=t

1

10

0

10

[K/W]

thJC

Z

-1

10

-2

10

/T parameter: V

p

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

10

-4

-5

10

-3

10

-2

10

-1

10

0

tp [s]

=25 °C

j

GS

45

20 V

30

[A]

D

I

15

0

0 5 10 15 20

8 V

6 V

5.5 V

5 V

4.5 V

VDS [V]

12 V

10V

Rev. 2.0 page 4 2009-09-09

IPB60R299CPA

not recommended

for new designs

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

=f(VDS); Tj=150 °C R

I

D

parameter: V

25

20

15

[A]

D

I

10

GS

20 V

12 V

10 V

8 V

5.5 V

5 V

4.5 V

5

0

0 5 10 15 20

VDS [V]

6 V

DS(on)

parameter: V

=f(ID); T

1.8

1.6

1.4

1.2

]

Ω

1

[

DS(on)

0.8

R

0.6

0.4

0.2

0

0 5 10 15 20 25

=150 °C

j

GS

5 V

5.5 V

6 V

ID [A]

7 V

6.5 V

10 V

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R

=f(Tj); ID=6.6 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|R

DS(on)

parameter: T

1

0.8

0.6

]

Ω

[

DS(on)

R

0.4

98 %

0.2

0

-60 -20 20 60 100 140 180

typ

Tj [°C]

50

40

30

[A]

D

I

20

10

0

0246810

DS(on)max

j

VGS [V]

25 °C

150 °C

Rev. 2.0 page 5 2009-09-09

IPB60R299CPA

not recommended

for new designs

9 Typ. gate charge 10 Forward characteristics of reverse diode

=f(Q

V

GS

parameter: V

[V]

GS

V

); ID=6.6 A pulsed IF=f(V

gate

DD

10

9

8

7

6

5

4

3

2

1

0

0 5 10 15 20 25

120 V

400 V

Q

[nC]

gate

parameter: T

)

SD

j

2

10

1

10

150 °C

[A]

F

I

0

10

-1

10

0 0.5 1 1.5 2

25 °C

VSD [V]

25 °C, 98%

150 °C, 98%

11 Avalanche energy 12 Drain-source breakdown voltage

=f(Tj); ID=4.4 A; VDD=50 V V

E

AS

300

200

[mJ]

AS

E

100

0

25 75 125 175

Tj [°C]

=f(Tj); I

BR(DSS)

700

660

[V]

620

BR(DSS)

V

580

540

-60 -20 20 60 100 140 180

=0.25 mA

D

Tj [°C]

Rev. 2.0 page 6 2009-09-09

13 Typ. capacitances 14 Typ. Coss stored energy

not recommended

for new designs

IPB60R299CPA

C=f(V

); VGS=0 V; f=1 MHz E

DS

5

10

4

10

3

10

[pF]

C

2

10

1

10

0

10

0 100 200 300 400 500

Ciss

Coss

Crss

VDS [V]

oss

=f(VDS)

8

6

[µJ]

4

oss

E

2

0

0 100 200 300 400 500 600

VDS [V]

Rev. 2.0 page 7 2009-09-09

Definition of diode switching characteristics

not recommended

for new designs

IPB60R299CPA

Rev. 2.0 page 8 2009-09-09

PG-TO263-3: Outlines

not recommended

for new designs

• Extreme dv/dt rated

IPB60R299CPA

Rev. 2.0 page 9 2009-09-09

Published by

A

not recommended

for new designs

ll Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,

any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party.

Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

IPB60R299CPA

Rev. 2.0 page 10 2009-09-09

not recommended

for new designs

NOTIFICATION

N° 040/10 Information on N-Channel MOSFET products designed for automotive

applications

Products affected:

SalesName Package

IPB60R099CPA PG-TO263-3-2 IPB60R199CPA PG-TO263-3-2 IPB60R299CPA PG-TO263-3-2 IPC60R075CPA Bare Die IPI60R099CPA PG-TO262-3-1 IPP60R099CPA PG-TO220-3-1 IPW60R045CPA PG-TO247-3-41 IPW60R075CPA PG-TO247-3-41 IPW60R099CPA PG-TO247-3-41

Dear Customer, The devices listed for this notification are sensitive to hard commutation of the conducting body diode. This

operating condition can occur in half-bridge configurations used in ZVS phase shift and resonant switching PWM converters. Using the device under such conditions may result in violation of the datasheet specification limits and may lead to permanent damage of the device. Please take care that in the context of the application described above the datasheet limits are not exceeded.

Best Regards Michael Paulu

If you have any questions, please do not hesitate to contact your local Sales office.

2010-05-12 Page 1 of 1