Datasheet ipb60r165cp_rev21 Datasheet

IPB60R165CP

CoolMOS® Power Transistor

Features

• Lowest figure-of-merit R

• Ultra low gate charge

ONxQg

Product Summary

V

@ T

DS

j,max

R

DS(on),max

Q

g,typ

• Extreme dv/dt rated

• High peak current capability

1)

• Qualified according to JEDEC

for target applications

• Pb-free lead plating; RoHS compliant

CoolMOS CP is specially designed for:

• Hard switching topologies for Server and Telecom

Type Package Ordering Code Marking

PG-TO263

650 V

0.165

39 nC

Ω

IPB60R165CP PG-TO263 SP000096439 6R165P

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, repetitive t

Avalanche current, repetitive t

MOSFET dv/dt ruggedness dv/dt

Gate source voltage

Power dissipation

=25 °C, unless otherwise specified

j

I

D

T T

2)

AR

2),3)

I

D,pulse

E

AS

E

AR

I

AR

T ID=7.9 A, V

ID=7.9 A, V

V

GS

static V

AC (f>1 Hz)

P

tot

T

=25 °C

C

=100 °C

C

=25 °C

C

=0...480 V

DS

=25 °C

C

DD

=50 V

Value

21

13

61

522 mJ

0.79

7.9

50

±20

±30

192

A

V/ns

W

Operating and storage temperature

, T

j

stg

-55 ... 150

°C

T

Rev. 2.1 page 1 2009-06-05

IPB60R165CP

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous diode forward current

Diode pulse current

Reverse diode dv /dt

Parameter Symbol Conditions Unit

=25 °C, unless otherwise specified

j

I

S

2)

4)

I

S,pulse

dv/dt 15 V/ns

T

C

=25 °C

Value

12

61

Values

A

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction ambient

R

thJC

SMD version, device

R

thJA

on PCB, minimal footprint

- - 0.65 K/W

--62

SMD version, device on PCB, 6 cm

5)

area

2

cooling

35

Soldering temperature, reflowsoldering

Electrical characteristics, at T

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

T

sold

=25 °C, unless otherwise specified

j

V

(BR)DSSVGS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

G

reflow MSL 1 - - 260 °C

=0 V, I

VDS=VGS, I

VDS=600 V, V T

=25 °C

j

V

=600 V, V

DS

T

=150 °C

j

VGS=20 V, V VGS=10 V, I

T

=25 °C

j

=10 V, I

V

GS

T

=150 °C

j

=250 µA

D

=0.79 mA

D

GS

=0 V

DS

=12 A,

D

=12 A,

D

f=1 MHz, open drain - 1.9 -

=0 V,

600 - - V

2.5 3 3.5

--1µA

-10-

- - 100 nA

- 0.15 0.165

Ω

- 0.40 -

Ω

Rev. 2.1 page 2 2007-11-22

IPB60R165CP

r

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Effective output capacitance, energy

6)

7)

Rise time

Turn-off delay time

Fall time

C C

C

t t t t

iss

oss

o(er)

o(tr)

d(on)

r

d(off)

f

=0 V, V

V

GS

f=1 MHz

=0 V, V

V

GS

to 480 V

V

=400 V,

DD

V

=10 V, I

GS

=3.3 Ω

R

G

=100 V,

DS

=0 V

DS

=12 A,

D

- 2000 - pF

- 100 -

-83-

- 220 -

-12-ns

-5-

-50-

-5-

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Q Q Q V

gs

gd

g

plateau

V

=400 V, I

DD

V

=0 to 10 V

GS

=12 A,

D

-9-nC

- 13.0 -

-3952

- 5.0 - V

Reverse Diode

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

1)

J-STD20 and JESD22

2)

Pulse width tp limited by T

3)

Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.

4)

ISD≤ID, di/dt≤200A/µs,V

5)

Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB

DClink

j,max

=400V, V

V

SD

t

rr

Q

rr

I

rrm

peak<V(BR)DSS

VGS=0 V, I T

=25 °C

j

VR=400 V, IF=I

di

/dt=100 A/µs

F

, Tj<T

jmax

is vertical without blown ai

6)

C

is a fixed capacitance that gives the same stored energy as C

o(er)

7)

C

is a fixed capacitance that gives the same charging time as C

o(tr)

=12 A,

F

- 0.9 1.2 V

- 390 - ns

,

S

- 7.5 - µC

-38-A

, identical low side and high side switch.

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

DSS.

Rev. 2.1 page 3 2007-11-22

1 Power dissipation 2 Safe operating area

P

=f(TC) ID=f(VDS); TC=25 °C; D=0

tot

parameter: t

200

10

2

p

limited by on-state resistance

IPB60R165CP

1 µs

10 µs

150

1

10

[W]

100

tot

P

[A]

D

I

10

0

50

-1

0

0 40 80 120 160

TC [°C]

10

0

10

1

VDS [V]

3 Max. transient thermal impedance 4 Typ. output characteristics

Z

=f(t

) ID=f(VDS); T

thJC

p

parameter: D=t

0

10

/T parameter: V

p

80

=25 °C

j

GS

100 µs

1 ms

DC

10 ms

10V

10

3

10

20 V

2

12 V

[K/W]

10

thJC

Z

10

-1

-2

10

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

-5

10

-3

-4

10

-2

10

-1

10

0

tp [s]

60

8 V

40

[A]

D

I

6 V

5.5 V

20

5 V

4.5 V

0

0 5 10 15 20 25

VDS [V]

Rev. 2.1 page 4 2007-11-22

IPB60R165CP

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I

=f(VDS); Tj=150 °C R

D

parameter: V

GS

=f(ID); T

DS(on)

parameter: V

=150 °C

j

GS

40

12 V

20 V

10 V

8 V

6 V

1.2

1

5.5 V

30

0.8

]

Ω

[

0.6

DS(on)

R

5 V

[A]

D

I

5.5 V

20

5 V

0.4

10

4.5 V

0.2

0

0 5 10 15 20 25

VDS [V]

0

0 1020304050

ID [A]

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R

=f(Tj); ID=12 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|R

DS(on)

parameter: T

j

DS(on)max

6.5 V

6 V

10 V

7 V

0.5

0.4

0.3

]

Ω

[

DS(on)

R

0.2

98%

typ

0.1

0

-60 -20 20 60 100 140 180

Tj [°C]

100

80

C °25

60

[A]

D

I

40

C °150

20

0

0246810

VGS [V]

Rev. 2.1 page 5 2007-11-22

IPB60R165CP

9 Typ. gate charge 10 Forward characteristics of reverse diode

V

=f(Q

GS

parameter: V

); ID=12 A pulsed IF=f(V

gate

DD

10

)

SD

parameter: T

2

10

j

25 °C, 98%

8

120 V

400 V

6

[V]

GS

V

4

2

0

010203040

Q

[nC]

gate

1

10

[A]

F

I

0

10

-1

10

0 0.5 1 1.5 2

150 °C

25 °C

VSD [V]

11 Avalanche energy 12 Drain-source breakdown voltage

E

=f(Tj); ID=7.9 A; VDD=50 V V

AS

600

BR(DSS)

700

=f(Tj); I

=0.25 mA

D

150 °C, 98%

660

400

[V]

[mJ]

AS

E

200

0

20 60 100 140 180

Tj [°C]

620

BR(DSS)

V

580

540

-60 -20 20 60 100 140 180

Tj [°C]

Rev. 2.1 page 6 2007-11-22

13 Typ. capacitances 14 Typ. Coss stored energy

IPB60R165CP

C=f(V

C [pF]

); VGS=0 V; f=1 MHz E

DS

5

10

4

10

Ciss

3

10

2

1

0

Coss

Crss

0 100 200 300 400 500

VDS [V]

=f(VDS)

oss

14

12

10

8

[µJ]

oss

E

6

4

2

0

0 100 200 300 400 500 600

VDS [V]

Rev. 2.1 page 7 2007-11-22

Definition of diode switching characteristics

IPB60R165CP

Rev. 2.1 page 8 2007-11-22

PG-TO263-3-2/TO-263-3-5/TO263-3-22: Outlines

IPB60R165CP

Dimensions in mm/inches

Rev. 2.1 page 9 2007-11-22

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The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office

(www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

IPB60R165CP

Rev. 2.1 page 10 2007-11-22