Datasheet ipb60r160c6_2_1 Datasheet

MOSFET

Metal Oxide Semiconductor Field Effect Transistor

CoolMOS C6

600V CoolMOS™ C6 Power Transistor
IPx60R160C6

Data Sheet

Rev. 2.1, 2010-02-09
Final

Industrial & Multimarket

600V CoolMOS™ C6 Power Transistor IPA60R160C6, IPB60R160C6

IPP60R160C6 IPW60R160C6

1 Description

CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS™ C6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter,and cooler.

Features

• Extremely low losses due to very low FOM Rdson*Qg and Eoss

• Very high commutation ruggedness

• Easy to use/drive

• JEDEC1)qualified, Pb-free plating, Halogen free

Applications

PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

gate
pin 1

drain
pin 2

source
pin 3

Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.

Table 1 Key Performance Parameters

Parameter Value Unit

V

@ T

DS

R

DS(on),max

Q

g,typ

I

D,pulse

E

oss

j,max

@ 400V 6 µJ

650 V

0.16 !
75 nC
70 A

Body diode di/dt 500 A/µs

Type / Ordering Code Package Marking Related Links

IPW60R160C6 PG-TO247 IFX C6 Product Brief
IPB60R160C6 PG-TO263 6R160C6 IFX C6 Portfolio
IPP60R160C6 PG-TO220 IFX CoolMOS Webpage
IPA60R160C6 PG-TO220 FullPAK IFX Design tools

1) J-STD20 and JESD22

Final Data Sheet 2 Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R160C6

Table of Contents

Table of Contents

1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Final Data Sheet 3 Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R160C6

Maximum ratings

2 Maximum ratings

at Tj= 25 °C, unless otherwise specified.

Table 2 Maximum ratings
Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Continuous drain current

Pulsed drain current
Avalanche energy, single pulse E

Avalanche energy, repetitive E
Avalanche current, repetitive I
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480 V
Gate source voltage V

Power dissipation for
TO-220, TO-247, TO-263

Power dissipation for
TO-220 FullPAK

Operating and storage temperature Tj,T
Mounting torque

TO-220, TO-247
Mounting torque

TO-220 FullPAK
Continuous diode forward current I
Diode pulse current
Reverse diode dv/dt

Maximum diode commutation

3)

speed

1) Limited by T

2) Pulse width tplimited by T

3) Identical low side and high side switch with identical R

j,max.

1)

2)

2)

3)

I

D

I

D,pulse

AS

AR

AR

GS

P

tot

P

tot

stg

S

I

S,pulse

dv/dt - - 15 V/ns VDS=0...400 V,I

dif/dt 500 A/µs

Maximum duty cycle D=0.75

j,max

- - 23.8 A TC= 25 °C
15 TC= 100°C

- - 70 A TC=25 °C

- - 497 mJ ID=4.1 A,VDD=50 V

(see table 21)

- - 0.75 ID=4.1 A,VDD=50 V

- - 4.1 A

-20 - 20 V static

-30 30 AC (f>1 Hz)

- - 176 W TC=25 °C

- - 34

-55 - 150 °C

- - 60 Ncm M3 and M3.5 screws

50 M2.5 screws

- - 20.6 A TC=25 °C

- - 70 A TC=25 °C

" I

SD

Tj=25 °C

G

D

,

Final Data Sheet 4 Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

Thermal characteristics

3 Thermal characteristics

Table 3 Thermal characteristics TO-220 (IPP60R160C6),TO-247 (IPW60R160C6)
Parameter Symbol Values Unit Note /

Min. Typ. Max.

Thermal resistance, junction - case R
Thermal resistance, junction -

thJC

R

thJA

- - 0.71 °C/W

- - 62 leaded

ambient
Soldering temperature,

T

sold

- - 260 °C 1.6 mm (0.063 in.)
wavesoldering only allowed at
leads

Table 4 Thermal characteristics TO-220FullPAK (IPA60R160C6)

Test Condition

from case for 10 s

IPx60R160C6

Parameter Symbol Values Unit Note /

Test Condition

Thermal resistance, junction - case R
Thermal resistance, junction -

Min. Typ. Max.

thJC

R

thJA

- - 3.67 °C/W

- - 80 leaded
ambient

Soldering temperature,
wavesoldering only allowed at

T

sold

- - 260 °C 1.6 mm (0.063 in.)

from case for 10 s

leads

Table 5 Thermal characteristics TO-263 (IPB60R160C6)
Parameter Symbol Values Unit Note /

Test Condition

on PCB, minimal

Thermal resistance, junction - case
Thermal resistance, junction -

ambient

Min. Typ. Max.

R

thJC

R

thJA

- - 0.71 °C/W

- - 62 SMD version, device

footprint

- 35 - SMD version, device

onPCB, 6cm2cooling

1)

area

Soldering temperature,

T

sold

- - 260 °C reflow MSL1
wave- & reflow soldering allowed

1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2copper area (thickness 70µm) for drain connection.

PCB is vertical without air stream cooling.

Final Data Sheet 5 Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R160C6

Electrical characteristics

4 Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified.

Table 6 Static characteristics
Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Drain-source breakdown voltage V
Gate threshold voltage V
Zero gate voltage drain current I

Gate-source leakage current I
Drain-source on-state resistance R

Gate resistance R

(BR)DSS

GS(th)

DSS

GSS

DS(on)

G

600 - - V VGS=0 V, ID=0.25 mA

2.5 3 3.5 VDS=VGS, ID=0.75 mA

- - 1 µA VDS=600 V, VGS=0 V,

T

=25 °C

j

- 10 - VDS=600 V, VGS=0 V,

T

=150 °C

j

- - 100 nA VGS=20 V, VDS=0 V

- 0.14 0.16 ! VGS=10 V, ID=11.3 A,

T

=25 °C

j

- 0.37 - VGS=10 V, ID=11.3 A,

T

=150 °C

j

- 6.4 - ! f=1 MHz, open drain

Table 7 Dynamic characteristics
Parameter Symbol Values Unit Note /

Test Condition

f=1 MHz

V

=0...480 V

DS

V

=0...480V

DS

V

=13 V, ID=11.3 A,

GS

R

= 1.7!

G

(see table 20)

Input capacitance C
Output capacitance
Effective output capacitance,

energy related

1)

Effective output capacitance, time
related

2)

Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

1) C

2) C

is a fixed capacitance that gives the same stored energy as C

o(er)

is a fixed capacitance that gives the same charging time as C

o(tr)

C
C

C

d(on)
r

d(off)

f

iss
oss

o(er)

o(tr)

Min. Typ. Max.

- 1660 - pF VGS=0 V, VDS=100 V,

- 100 -

- 66 - VGS=0 V,

- 314 - ID=constant,VGS=0 V

- 13 - ns VDD=400 V,

- 13 -

- 96 -

- 8 -

while VDSis rising from 0 to 80% V

oss

while VDSis rising from 0 to 80% V

oss

(BR)DSS

(BR)DSS

Final Data Sheet 6 Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

Electrical characteristics

Table 8 Gate charge characteristics
Parameter Symbol Values Unit Note /

Min. Typ. Max.

Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V

gs

gd

g

plateau

- 9 - nC VDD=480 V,

- 38 -

- 75 -

- 5.4 - V

Table 9 Reverse diode characteristics
Parameter Symbol Values Unit Note /

Min. Typ. Max.

Diode forward voltage V

Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I

SD

rr

rr

rrm

- 0.9 - V VGS=0 V, IF=11.3 A,

- 460 - ns VR=400 V, IF=11.3 A,

- 8.2 - µC

- 35 - A

Test Condition

I

=11.3 A,

D

V

=0 to 10 V

GS

Test Condition

T

=25 °C

j

diF/dt=100 A/µs
(see table 22)

IPx60R160C6

Final Data Sheet 7 Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

5 Electrical characteristics diagrams

Table 10

IPx60R160C6

Electrical characteristics diagrams

Power dissipation
TO-220, TO-247, TO-263

P

= f(TC) P

tot

Power dissipation
TO-220 FullPAK

= f(TC)

tot

Table 11

Max. transient thermal impedance
TO-220, TO-247, TO-263

Max. transient thermal impedance
TO-220 FullPAK

Z

=f(tp); parameter: D=tp/T Z

(thJC)

=f(tp); parameter: D=tp/T

(thJC)

Final Data Sheet 8 Rev. 2.1, 2010-02-09

Table 12

600V CoolMOS™ C6 Power Transistor

IPx60R160C6

Electrical characteristics diagrams

Safe operating area TC=25 °C
TO-220, TO-247, TO-263

I

=f(VDS); TC=25 °C; D=0; parameter t

D

Safe operating area TC=25 °C
TO-220 FullPAK

p

ID=f(VDS); TC=25 °C; D=0; parameter t

p

Table 13

Safe operating area TC=80 °C
TO-220, TO-247, TO-263

Safe operating area TC=80 °C
TO-220 FullPAK

ID=f(VDS); TC=80 °C; D=0; parameter t

p

ID=f(VDS); TC=80 °C; D=0; parameter t

p

Final Data Sheet 9 Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

Electrical characteristics diagrams

Table 14

Typ. output characteristics TC=25 °C Typ. output characteristics Tj=125 °C

IPx60R160C6

ID=f(VDS); Tj=25 °C; parameter: V

GS

ID=f(VDS); Tj=125 °C; parameter: V

Table 15

Typ. drain-source on-state resistance Drain-source on-state resistance

GS

R

=f(ID); Tj=125 °C; parameter: V

DS(on)

GS

R

=f(Tj); ID=11.3 A; VGS=10 V

DS(on)

Final Data Sheet 10 Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

Table 16

Typ. transfer characteristics Typ. gate charge

IPx60R160C6

Electrical characteristics diagrams

ID=f(VGS); VDS=20V

VGS=f(Q

), ID=11.3 A pulsed

gate

Table 17

Avalanche energy Drain-source breakdown voltage

EAS=f(Tj); ID=4.1 A; VDD=50 V V

=f(Tj); ID=0.25 mA

BR(DSS)

Final Data Sheet 11 Rev. 2.1, 2010-02-09

Table 18

600V CoolMOS™ C6 Power Transistor

IPx60R160C6

Electrical characteristics diagrams

Typ. capacitances Typ. C

C=f(VDS); VGS=0 V; f=1 MHz E

OSS

=f(VDS)

stored energy

oss

Table 19

Forward characteristics of reverse diode

IF=f(VSD); parameter: T

j

Final Data Sheet 12 Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

6 Test circuits

Table 20 Switching times test circuit and waveform for inductive load

Switching times test circuit for inductive load Switching time waveform

V

DS

V

DS

V

GS

V

GS

10%

90%

t

d(on)

t

r

t

on

t

d(off)

IPx60R160C6

Test circuits

t

f

t

off

Table 21 Unclamped inductive load test circuit and waveform

Unclamped inductive load test circuit Unclamped inductive waveform

I

D

V

DS

V

DS

I

D

Table 22 Test circuit and waveform for diode recovery times

Test circuit for diode recovery times Diode recovery waveform

I

D

R

G1

V

DS

$

@

$ %

)@

4

4

% %

;

V

D

% %;%

1 %

LL

1

" "

LL

%

LL

4

%

; 4

V

(BR)DS

V

DS

"

4

R

G2

RG1= R

G2

998

"

"

4

;

0*"

+*"

)@$@LL%

998

%

998

#

998

;57***//

Final Data Sheet 13 Rev. 2.1, 2010-02-09

7 Package outlines

600V CoolMOS™ C6 Power Transistor

IPx60R160C6

Package outlines

Figure 1 Outlines TO-247, dimensions in mm/inches

Final Data Sheet 14 Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R160C6

Package outlines

Figure 2 Outlines TO-220, dimensions in mm/inches

Final Data Sheet 15 Rev. 2.1, 2010-02-09

600V CoolMOS™ C6 Power Transistor

IPx60R160C6

Package outlines

Figure 3 Outlines TO-220 FullPAK, dimensions in mm/inches

Final Data Sheet 16 Rev. 2.1, 2010-02-09

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8 Revision History

CoolMOS C6 600V CoolMOS™ C6 Power Transistor

Revision History: 2010-02-09, Rev. 2.1
Previous Revision:

Revision Subjects (major changes since last revision)

2.0 Release of final data sheet

2.1 New package outlines TO-247

We Listen to Your Comments

600V CoolMOS™ C6 Power Transistor

IPx60R160C6

Revision History

Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
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Edition 2010-02-09
Published by

Infineon Technologies AG
81726 Munich, Germany

© 2010 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.

Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that
device or system. Life support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.

Final Data Sheet 18 Rev. 2.1, 2010-02-09