Page 1
IPB60R125CP
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit R
• Ultra low gate charge
ONxQg
Product Summary
V
@ T
DS
j,max
R
DS(on),max
Q
g,typ
• Extreme dv/dt rated
• High peak current capability
1)
• Qualified according to JEDEC
for target applications
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching topologies, for Server and Telecom
Type Package Ordering Code Marking
PG-TO263
650 V
0.125
53 nC
Ω
IPB60R125CP PG-TO263 SP000088488 6R125P
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
=25 °C, unless otherwise specified
j
I
D
TC=25 °C
T
2)
AR
AR
2),3)
2),3)
I
D,pulse
E
AS
E
AR
I
AR
TC=25 °C
ID=11 A, VDD=50 V
ID=11 A, VDD=50 V
V
V
GS
static V
AC (f >1 Hz)
P
tot
, T
T
j
TC=25 °C
stg
=100 °C
C
=0...480 V
DS
Value
25
16
82
708 mJ
1.2
11
50
±20
±30
208
-55 ... 150
A
A
V/ns
W
°C
Rev. 1.0 page 1 2007-02-06
Page 2
Maximum ratings, at Tj=25 °C, unless otherwise specified
IPB60R125CP
Parameter Symbol Conditions Unit
Continuous diode forward current
Diode pulse current
Reverse diode dv /dt
2)
4)
I
S
I
S,pulse
T
C
=25 °C
dv /dt 15 V/ns
Parameter Symbol Conditions Unit
Value
16
82
Values
A
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 0.6 K/W
SMD version, device
Thermal resistance, junction ambient
R
thJA
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm
5)
area
2
cooling
--62
-35-
Soldering temperature,
wave- & reflowsoldering allowed
Electrical characteristics, at T
=25 °C, unless otherwise specified
j
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
T
sold
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
reflow MSL1 - - 260 °C
=0 V, ID=250 µA
VDS=VGS, ID=1.1 mA
VDS=600 V, VGS=0 V,
=25 °C
T
j
=600 V, VGS=0 V,
V
DS
=150 °C
T
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=16 A,
=25 °C
T
j
=10 V, ID=16 A,
V
GS
=150 °C
T
j
600 - - V
2.5 3 3.5
--2µA
-20-
- - 100 nA
- 0.11 0.125
Ω
- 0.30 -
Gate resistance
R
G
f =1 MHz, open drain - 2.1 -
Ω
Rev. 1.0 page 2 2007-02-06
Page 3
IPB60R125CP
r
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
6)
related
Effective output capacitance, time
7)
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
C
t
t
t
t
iss
oss
o(er)
o(tr)
d(on)
r
d(off)
f
V
=0 V, VDS=100 V,
GS
f =1 MHz
V
=0 V, VDS=0 V
GS
to 480 V
=400 V,
V
DD
=10 V, ID=16 A,
V
GS
=3.3 Ω
R
G
- 2500 - pF
- 120 -
- 110 -
- 300 -
-15-ns
-5-
-50-
-5-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
=400 V, ID=16 A,
DD
=0 to 10 V
V
GS
-12-nC
-18-
-5370
Gate plateau voltage
V
plateau
- 5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
1)
J-STD20 and JESD22
2)
Pulse width tp limited by T
3)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
4)
ISD=ID, di/dt<=200A/µs, V
5)
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB
j,max
DClink
=400V, V
V
SD
t
rr
Q
rr
I
rrm
peak<V(BR)DSS
is vertical without blown ai
6)
C
is a fixed capacitance that gives the same stored energy as C
o(er)
7)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
VGS=0 V, IF=16 A,
=25 °C
T
j
VR=400 V, IF=IS,
/dt =100 A/µs
di
F
, Tj<T
, identical low side and high side switch.
jmax
oss
oss
- 0.9 1.2 V
- 430 - ns
-9-µC
-42-A
while VDS is rising from 0 to 80% V
while VDS is rising from 0 to 80% V
DSS.
DSS.
Rev. 1.0 page 3 2007-02-06
Page 4
1 Power dissipation 2 Safe operating area
P
=f(TC) ID=f(VDS); TC=25 °C; D =0
tot
parameter: t
250
200
10
2
p
limited by on-state
resistance
IPB60R125CP
1 µs
10 µs
100 µs
1
10
150
DC
[W]
tot
P
[A]
D
I
100
0
10
50
-1
0
0 40 80 120 160
TC [°C]
10
10
0
10
1
VDS [V]
3 Max. transient thermal impedance 4 Typ. output characteristics
Z
=f(tP) ID=f(VDS); Tj=25 °C
thJC
parameter: D=t
0
10
/T parameter: V
p
0.5
GS
120
105
90
10 ms
1 ms
10
20 V
8 V
10
3
2
10 V
[K/W]
10
thJC
Z
0.2
-1
0.1
0.05
0.02
0.01
[A]
D
I
75
60
45
30
7 V
6 V
5.5 V
5 V
15
4.5 V
VDS [V]
10
-2
10
single pulse
-5
10
0
0 5 10 15 20
10
-3
-4
10
-2
10
-1
10
0
tp [s]
Rev. 1.0 page 4 2007-02-06
Page 5
IPB60R125CP
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I
=f(VDS); Tj=150 °C R
D
parameter: V
GS
=f(ID); Tj=150 °C
DS(on)
parameter: V
GS
50
10 V
40
20 V
30
[A]
D
I
20
10
0
0 5 10 15 20
VDS [V]
5.5 V
5 V
4.5 V
8 V
7 V
6 V
0.5
5 V
0.4
0.3
]
Ω
[
DS(on)
R
0.2
0.1
0
0 1020304050
ID [A]
7 Drain-source on-state resistance 8 Typ. transfer characteristics
R
=f(Tj); ID=16 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|R
DS(on)
parameter: T
j
DS(on)max
5.5 V
20 V
6 V
6.5 V
7 V
0.4
120
C °25
0.3
80
]
Ω
[
DS(on)
R
0.2
98 %
typ
[A]
D
I
C °150
40
0.1
0
-60 -20 20 60 100 140 180
Tj [°C]
0
0246810
VGS [V]
Rev. 1.0 page 5 2007-02-06
Page 6
IPB60R125CP
9 Typ. gate charge 10 Forward characteristics of reverse diode
V
=f(Q
GS
parameter: V
); ID=16 A pulsed IF=f(VSD)
gate
DD
10
9
parameter: T
2
10
j
25 °C, 98%
8
7
120 V
400 V
10
1
150 °C
25 °C
6
[V]
5
GS
V
[A]
F
I
4
0
3
10
2
1
-1
0
0 102030405060
Q
[nC]
gate
10
0 0.5 1 1.5 2
VSD [V]
11 Avalanche energy 12 Drain-source breakdown voltage
E
=f(Tj); ID=11 A; VDD=50 V V
AS
800
=f(Tj); ID=0.25 mA
BR(DSS)
700
150 °C, 98%
600
660
[V]
400
[mJ]
AS
E
200
0
20 60 100 140 180
Tj [°C]
620
BR(DSS)
V
580
540
-60 -20 20 60 100 140 180
Tj [°C]
Rev. 1.0 page 6 2007-02-06
Page 7
13 Typ. capacitances 14 Typ. Coss stored energy
IPB60R125CP
C =f(V
C [pF]
); VGS=0 V; f =1 MHz E
DS
5
10
4
10
Ciss
3
10
2
10
10
10
1
0
Coss
Crss
0 100 200 300 400 500
VDS [V]
= f(VDS)
oss
20
16
12
[µJ]
oss
E
8
4
0
0 100 200 300 400 500 600
VDS [V]
Rev. 1.0 page 7 2007-02-06
Page 8
Definition of diode switching characteristics
IPB60R125CP
Rev. 1.0 page 8 2007-02-06
Page 9
PG-TO263-3-2/TO263-3-5/TO263-3-22: Outlines
IPB60R125CP
Dimensions in mm/inches:
Rev. 1.0 page 9 2007-02-06
Page 10
IPB60R125CP
A
A
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.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
ll Rights Reserved.
ttention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica
values stated herein and/or any information regarding the application of the device, Infineon Technologie
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office
Warnings
Due to technical requirements components may contain dangerous substances. For information on the type
in question please contact your nearest Infineon Technologies Office
Infineon Technologies Components may only be used in life-support devices or systems with the expres
written approval of Infineon Technologies, if a failure of such components can reasonably be expected t
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/o
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of th
user or other persons may be endangered
www.infineon.com ).
Rev. 1.0 page 10 2007-02-06
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