Datasheet ipb60r099cpa Datasheet

IPB60R099CPA

not recommended

for new designs

CoolMOS® Power Transistor

Features

• Worldwide best Rds,on in TO263

• Ultra low gate charge

• Extreme dv/dt rated

• High peak current capability

• Automotive AEC Q101 qualified

• Green package (RoHS compliant)

CoolMOS CPA is specially designed for:

• DC/DC converters for Automotive Applications

Product Summary

V

DS

R

DS(on),max

Q

g,typ

600 V

0.105

60 nC

PG-TO263-3-2

Ω

Type Package Marking

IPB60R099CPA PG-TO263-3-2 6R099A

Maximum ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, repetitive t

Avalanche current, repetitive t

MOSFET dv /dt ruggedness dv /dt

Gate source voltage

Power dissipation

=25 °C, unless otherwise specified

j

Symbol Conditions Unit

I

D

1)

AR

1),2)

I

D,pulse

E

AS

E

AR

I

AR

V

GS

P

tot

TC=25 °C

T

TC=25 °C

ID=11 A, VDD=50 V

V

static V

TC=25 °C

=100 °C

C

=0...480 V

DS

Value

31

19

93

800 mJ

1.2

11

50

±20

255

A

V/ns

W

Operating temperature

Storage temperature

Rev. 2.1 page 1 2009-03-25

T

j

T

stg

-40 ... 150

°C

Maximum ratings, at Tj=25 °C, unless otherwise specified

not recommended

for new designs

IPB60R099CPA

Parameter Symbol Conditions Unit

Continuous diode forward current

Diode pulse current

Reverse diode dv /dt

Parameter Symbol Conditions Unit

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction ambient

1)

3)

Soldering temperature, reflow soldering

I

S

I

S,pulse

dv /dt

R

thJC

R

thJA

T

sold

=25 °C

T

C

SMD version, device on PCB, minimal footprint

SMD version, device

on PCB, 6 cm

4)

area MSL1, reflow acc. to

IPC-JEDEC J-STD020C

2

cooling

Value

18

93

15 V/ns

Values

min. typ. max.

- - 0.5 K/W

--62

-35-

- - 245 °C

A

Electrical characteristics, at T

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

=25 °C, unless otherwise specified

j

V

(BR)DSSVGS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

G

=0 V, ID=250 µA

VDS=VGS, ID=1.2 mA

VDS=600 V, VGS=0 V, T

=25 °C

j

VGS=20 V, VDS=0 V

VGS=10 V, ID=18 A, T

=25 °C

j

=10 V, ID=18 A,

V

GS

T

=150 °C

j

f =1 MHz, open drain

600 - - V

2.5 3 3.5

--5µA

- - 100 nA

- 0.09 0.105

- 0.24 -

- 1.3 -

Ω

Rev. 2.1 page 2 2009-03-25

IPB60R099CPA

not recommended

for new designs

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Effective output capacitance, energy

Effective output capacitance, time

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

t

iss

oss

o(er)

o(tr)

d(on)

r

d(off)

f

V

=0 V, VDS=100 V,

GS

f =1 MHz

V

=0 V, VDS=0 V

GS

to 480 V

V

=400 V,

DD

V

=10 V, ID=18 A,

GS

=3.3 Ω

R

G

- 2800 - pF

- 130 -

- 340 -

-10-ns

-5-

-60-

-5-

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Q

V

gs

gd

g

plateau

=400 V, ID=18 A,

V

DD

V

=0 to 10 V

GS

Reverse Diode

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

1)

Pulse width tp limited by T

2)

Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.

3)

ISD≤ID, di /dt≤ 100A/µs,V

4)

Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection.

PCB is vertical without blown air

5)

C

is a fixed capacitance that gives the same stored energy as C

o(er)

6)

C

is a fixed capacitance that gives the same charging time as C

o(tr)

j,max

DClink

= 400V, V

V

SD

t

rr

Q

rr

I

rrm

peak<V(BR)DSS

VGS=0 V, IF=18 A, T

=25 °C

j

VR=400 V, IF=IS,

di

/dt =100 A/µs

F

, Tj<T

jmax

-14-nC

-20-

-6080

- 5.0 - V

- 0.9 1.2 V

- 450 - ns

-12-µC

-70-A

, identical low side and high side switch

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

DSS.

Rev. 2.1 page 3 2009-03-25

1 Power dissipation 2 Safe operating area

not recommended

for new designs

=f(TC) ID=f(VDS); TC=25 °C; D =0

P

tot

parameter: t

p

IPB60R099CPA

300

200

[W]

tot

P

100

0

0 40 80 120 160

TC [°C]

3 Max. transient thermal impedance 4 Typ. output characteristics

[A]

D

I

10

2

1

0

-1

limited by on-state resistance

0

10

1

DC

VDS [V]

10 ms

10

2

10 µs

100 µs

1 ms

1 µs

10

3

=f(tP) ID=f(VDS); Tj=25 °C

Z

thJC

parameter: D=t

0

10

-1

[K/W]

10

thJC

Z

-2

10

/T parameter: V

p

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

10

-4

-5

10

-3

10

-2

10

-1

10

0

[A]

D

I

120

105

90

75

60

45

30

15

0

tp [s]

GS

10 V

20 V

7 V

6 V

5.5 V

5 V

4.5 V

0 5 10 15 20

8 V

VDS [V]

Rev. 2.1 page 4 2009-03-25

IPB60R099CPA

not recommended

for new designs

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

=f(VDS); Tj=150 °C R

I

D

parameter: V

50

40

30

[A]

D

I

20

10

GS

7 V

8 V

10 V

20 V

0

0 5 10 15 20

6 V

5.5 V

5 V

4.5 V

VDS [V]

DS(on)

parameter: V

=f(ID); Tj=150 °C

GS

0.5

0.4

0.3

]

Ω

[

DS(on)

R

0.2

0.1

0

0 1020304050

5 V

ID [A]

5.5 V

6 V

20 V

6.5 V

7 V

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R

=f(Tj); ID=18 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|R

DS(on)

parameter: T

0.3

0.25

0.2

]

Ω

[

0.15

DS(on)

R

0.1

0.05

0

-60 -20 20 60 100 140 180

98 %

typ

Tj [°C]

160

120

80

[A]

D

I

40

0

0246810

DS(on)max

j

VGS [V]

C °25

C °150

Rev. 2.1 page 5 2009-03-25

IPB60R099CPA

not recommended

for new designs

9 Typ. gate charge 10 Forward characteristics of reverse diode

=f(Q

V

GS

parameter: V

[V]

GS

V

); ID=18 A pulsed IF=f(VSD)

gate

DD

10

8

120 V

400 V

6

4

2

0

0 102030405060

Q

[nC]

gate

parameter: T

j

2

10

25 °C

150 °C

1

10

[A]

F

I

0

10

-1

10

0 0.5 1 1.5 2

VSD [V]

25 °C, 98%

150 °C, 98%

11 Avalanche energy 12 Drain-source breakdown voltage

=f(Tj); ID=11 A; VDD=50 V V

E

AS

800

600

400

[mJ]

AS

E

200

0

25 75 125 175

Tj [°C]

=f(Tj); ID=0.25 mA

BR(DSS)

700

660

[V]

620

BR(DSS)

V

580

540

-60 -20 20 60 100 140 180

Tj [°C]

Rev. 2.1 page 6 2009-03-25

13 Typ. capacitances 14 Typ. Coss stored energy

not recommended

for new designs

IPB60R099CPA

C =f(V

); VGS=0 V; f =1 MHz E

DS

5

10

4

10

Ciss

3

10

[pF]

C

2

10

1

10

0

10

0 100 200 300 400 500

Coss

Crss

VDS [V]

oss

= f(VDS)

20

16

12

[µJ]

oss

E

8

4

0

0 100 200 300 400 500 600

VDS [V]

Rev. 2.1 page 7 2009-03-25

Definition of diode switching characteristics

not recommended

for new designs

IPB60R099CPA

Rev. 2.1 page 8 2009-03-25

PG-TO263-3-2: Outlines

not recommended

for new designs

IPB60R099CPA

Soldering temperature, reflow soldering

Rev. 2.1 page 9 2009-03-25

Published by

A

not recommended

for new designs

ll Rights Reserved.

Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party.

Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

IPB60R099CPA

Rev. 2.1 page 10 2009-03-25

not recommended

for new designs

NOTIFICATION

N° 040/10 Information on N-Channel MOSFET products designed for automotive

applications

Products affected:

SalesName Package

IPB60R099CPA PG-TO263-3-2 IPB60R199CPA PG-TO263-3-2 IPB60R299CPA PG-TO263-3-2 IPC60R075CPA Bare Die IPI60R099CPA PG-TO262-3-1 IPP60R099CPA PG-TO220-3-1 IPW60R045CPA PG-TO247-3-41 IPW60R075CPA PG-TO247-3-41 IPW60R099CPA PG-TO247-3-41

Dear Customer, The devices listed for this notification are sensitive to hard commutation of the conducting body diode. This

operating condition can occur in half-bridge configurations used in ZVS phase shift and resonant switching PWM converters. Using the device under such conditions may result in violation of the datasheet specification limits and may lead to permanent damage of the device. Please take care that in the context of the application described above the datasheet limits are not exceeded.

Best Regards Michael Paulu

If you have any questions, please do not hesitate to contact your local Sales office.

2010-05-12 Page 1 of 1