Datasheet ipb180n04s4-01_ds_1_0 Datasheet

IPB180N04S4-01

OptiMOS®-T2 Power-Transistor

Features

• N-channel - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• Ultra low Rds(on)

• 100% Avalanche tested

Type Package Marking

Product Summary

V

DS

R

DS(on)

I

D

40 V

1.3

180 A

PG-TO263-7-3

mΩ

IPB180N04S4-01 PG-TO263-7-3 4N0401

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

=25 °C, unless otherwise specified

j

I

D

TC=25°C, VGS=10V

T

V

2)

I

D,pulse

E

AS

I

AS

V

GS

P

tot

T

, T

j

TC=25 °C

ID=90 A

-

- ±20 V

TC=25 °C

- -55 ... +175 °C

stg

=100 °C,

C

=10 V

GS

Value

1)

2)

180 A

180

720

550 mJ

180 A

188 W

IEC climatic category; DIN IEC 68-1 - - 55/175/56

Rev. 1.0 page 1 2010-04-13

IPB180N04S4-01

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

SMD version, device on PCB

Electrical characteristics, at T

2)

R

thJC

R

thJA

=25 °C, unless otherwise specified

j

- - - 0.8 K/W

minimal footprint - - 62

6 cm

2

cooling area

3)

--40

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

V

(BR)DSSVGS

V

GS(th)

I

DSS

=0 V, ID= 1 mA

VDS=VGS, ID=140 µA

VDS=40 V, VGS=0 V,
T

=25 °C

j

40 - - V

2.0 3.0 4.0

- 0.06 1 µA

Gate-source leakage current

Drain-source on-state resistance

I

R

GSS

DS(on)

V

=18 V, VGS=0 V,

DS

T

=85 °C

j

2)

VGS=20 V, VDS=0 V

VGS=10 V, ID=100 A

-120

- - 100 nA

- 1.1 1.3 mΩ

Rev. 1.0 page 2 2010-04-13

IPB180N04S4-01

y

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

namic characteristics

D

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

2)

C

iss

V

=0 V, VDS=25 V,

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

2)

Q

gs

Q

gd

Q

g

GS

f =1 MHz

V

=20 V, VGS=10 V,

DD

I

=180 A, R

D

=32 V, ID=180 A,

V

DD

V

=0 to 10 V

GS

=3.5 Ω

G

- 10770 14000 pF

- 2450 3150

- 80 184

-35-ns

-24-

-38-

-41-

-5977nC

-1944

- 135 176

Gate plateau voltage

V

plateau

- 5.5 - V

Reverse Diode

2)

Diode continous forward current

Diode pulse current

2)

Diode forward voltage

Reverse recovery time

Reverse recovery charge

1)

Current is limited by bondwire; with an R

2)

Defined by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

2)

2)

I

S

I

S,pulse

V

SD

t

rr

Q

rr

= 0.8 K/W the chip is able to carry 293 A at 25°C.

thJC

=25 °C

T

C

VGS=0 V, IF=100 A,
T

=25 °C

j

VR=20 V, IF=50A,

di

/dt =100 A/µs

F

connection. PCB is vertical in still air.

- - 180 A

- - 720

- 0.9 1.3 V

-64-ns

-88-nC

Rev. 1.0 page 3 2010-04-13

1 Power dissipation 2 Drain current

P

= f(TC); V

tot

≥ 6 V ID = f(TC); V

GS

GS

IPB180N04S4-01

≥ 6 V

200

175

200

180

160

150

140

125

[W]

100

tot

P

75

120

100

[A]

D

I

80

60

50

40

25

0

0 50 100 150 200

TC [°C]

20

0

0 50 100 150 200

TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I

= f(VDS); TC = 25 °C; D = 0 Z

D

parameter: t

p

1000

1 µs

10 µs

100 µs

1 ms

[A]

D

I

100

10

1

0.1 1 10 100

VDS [V]

= f(tp)

thJC

parameter: D =tp/T

0

10

0.5

0.1

-1

10

0.05

[K/W]

thJC

Z

10

10

0.01

-2

-3

-5

-6

10

10

single pulse

10

10

-1

10

-3

10

-4

-2

10

0

tp [s]

Rev. 1.0 page 4 2010-04-13

IPB180N04S4-01

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I

= f(VDS); Tj = 25 °C R

D

parameter: V

600

10 V

GS

7 V

6.5 V

500

parameter: V

= (ID); Tj = 25 °C

DS(on)

14

12

10

GS

5.5 V

6 V

6V

6.5 V

400

[A]

D

300

I

200

100

0

0246

VDS [V]

6 V

5.5 V

5 V

]

Ω

8

[m

DS(on)

6

R

4

2

0

0 100 200 300 400 500 600

ID [A]

7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance

I

= f(VGS); V

D

parameter: T

720

630

= 6V R

DS

j

= f(Tj); ID = 100 A; V

DS(on)

2

GS

= 10 V

7 V

10 V

540

1.5

450

360

[A]

D

I

270

180

90

175 °C

25 °C

-55 °C

0

2345678

VGS [V]

]

Ω

[m

DS(on)

R

1

0.5

-60 -20 20 60 100 140 180

Tj [°C]

Rev. 1.0 page 5 2010-04-13

IPB180N04S4-01

9 Typ. gate threshold voltage 10 Typ. capacitances

V

GS(th)

= f(Tj); V

parameter: I

4

3.5

3

[V]

2.5

GS(th)

V

2

1.5

1

-60 -20 20 60 100 140 180

= V

GS

DS

D

700 µA

140 µA

C = f(VDS); V

5

10

4

10

3

10

[pF]

= 0 V; f = 1 MHz

GS

Ciss

Coss

C

Crss

Tj [°C]

2

10

1

10

0 5 10 15 20 25 30

VDS [V]

11 Typical forward diode characteristicis 12 Typ. avalanche characteristics

IF = f(V

parameter: T

) I

SD

j

3

10

2

10

25 °C

[A]

F

I

10

10

1

0

175 °C

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSD [V]

= f(tAV)

AS

parameter: T

1000

100

[A]

AV

I

10

1

1 10 100 1000

j(start)

150 °C

tAV [µs]

25 °C

100 °C

Rev. 1.0 page 6 2010-04-13

IPB180N04S4-01

13 Typical avalanche energy 14 Drain-source breakdown voltage

E

= f(Tj) V

AS

parameter: I

D

= f(Tj); ID = 1 mA

BR(DSS)

1250

45 A

1000

750

52

48

44

[V]

[mJ]

AS

E

500

90 A

180 A

250

0

25 75 125 175

BR(DSS)

V

40

36

32

-60 -20 20 60 100 140 180

Tj [°C]

15 Typ. gate charge 16 Gate charge waveforms

Tj [°C]

V

= f(Q

GS

gate

parameter: V

12

10

8

[V]

6

GS

V

4

2

0

0 20 40 60 80 100 120 140

); ID = 180 A pulsed

DD

Q

[nC]

gate

8 V

32 V

V

V

GS

GS

Q

Q

g

g

Q

Q

gate

gate

Q

Q

Q

gs

gs

Q

gd

gd

Rev. 1.0 page 7 2010-04-13

IPB180N04S4-01

r

Published by
Infineon Technologies AG
81726 Munich, Germany

© Infineon Technologies AG 2010

All Rights Reserved.

Legal Disclaime

The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.0 page 8 2010-04-13

Revision History

IPB180N04S4-01

Version

Revision 1.0

Date

13.04.2010

Changes

Final Data Sheet

Rev. 1.0 page 9 2010-04-13