Datasheet ipb160n04s3-h2_ds_1_1 Datasheet

IPB160N04S3-H2

OptiMOS®-T Power-Transistor

Features

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• Ultra low Rds(on)

• 100% Avalanche tested

Type Package Marking

Product Summary

V

DS

R

DS(on)

I

D

40 V

2.1

160 A

PG-TO263-7-3

mΩ

IPB160N04S3-H2 PG-TO263-7-3 3QN04H2

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

=25 °C, unless otherwise specified

j

I

D

TC=25°C, VGS=10V

T

V

2)

I

D,pulse

E

AS

V

GS

P

tot

T

, T

j

TC=25 °C

ID=80 A

TC=25 °C

stg

=100 °C,

C

=10 V

GS

Value

1)

2)

160 A

157

640

898 mJ

±20 V

214 W

-55 ... +175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

Rev. 1.0 page 1 2007-04-16

IPB160N04S3-H2

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

SMD version, device on PCB

Electrical characteristics, at T

2)

R

thJC

R

thJA

=25 °C, unless otherwise specified

j

minimal footprint - - 62

2

cooling area

6 cm

3)

- - 0.7 K/W

--40

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

V

(BR)DSSVGS

V

GS(th)

I

DSS

=0 V, ID= 1 mA

VDS=VGS, ID=150 µA

VDS=40 V, VGS=0 V,
T

=25 °C

j

40 - - V

2.1 3.0 4.0

--1µA

Gate-source leakage current

Drain-source on-state resistance

I

R

GSS

DS(on)

V

=40 V, VGS=0 V,

DS

T

=125 °C

j

2)

VGS=20 V, VDS=0 V

VGS=10 V, ID=80 A

- - 100

- - 100 nA

- 1.6 2.1 mΩ

Rev. 1.0 page 2 2007-04-16

IPB160N04S3-H2

y

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

namic characteristics

D

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

2)

C

iss

V

=0 V, VDS=25 V,

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

2)

Q

gs

Q

gd

Q

g

GS

f =1 MHz

V

=20 V, VGS=10 V,

DD

I

=80 A, R

D

=32 V, ID=80 A,

V

DD

V

=0 to 10 V

GS

=3.3 Ω

G

- 7400 9600 pF

- 2000 2600

- 310 465

-30-ns

-16-

-46-

-17-

-3850nC

-2545

- 110 145

Gate plateau voltage

V

plateau

- 5.2 - V

Reverse Diode

2)

Diode continous forward current

Diode pulse current

2)

Diode forward voltage

Reverse recovery time

Reverse recovery charge

1)

Current is limited by bondwire; with an R

2)

2)

I

S

I

S,pulse

V

SD

t

rr

Q

rr

= 0.7 K/W the chip is able to carry 221 A at 25°C. For detailed

thJC

=25 °C

T

C

VGS=0 V, IF=80 A,
T

=25 °C

j

VR=20 V, IF=50A,

di

/dt =100 A/µs

F

information see Application Note ANPS071E at www.infineon.com/optimos

2)

Defined by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

- - 160 A

- - 640

- 0.85 1.3 V

-60-ns

-95-nC

Rev. 1.0 page 3 2007-04-16

1 Power dissipation 2 Drain current

P

= f(TC); V

tot

≥ 6 V ID = f(TC); V

GS

GS

IPB160N04S3-H2

≥ 6 V

250

180

160

200

140

120

150

100

[W]

tot

P

[A]

D

I

80

100

60

50

40

20

0

0 50 100 150 200

TC [°C]

0

0 50 100 150 200

TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I

= f(VDS); TC = 25 °C; D = 0 Z

D

parameter: t

p

1000

1 µs

10 µs

100 µs

1 ms

100

[A]

D

I

10

0.1 1 10 100

VDS [V]

= f(tp)

thJC

parameter: D =tp/T

0

10

0.5

-1

0.1

10

0.05

[K/W]

thJC

10

10

-2

-3

10

0.01

single pulse

-6

10

-5

Z

10

10

-1

10

-3

10

-4

-2

10

0

tp [s]

Rev. 1.0 page 4 2007-04-16

IPB160N04S3-H2

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I

= f(VDS); Tj = 25 °C R

D

parameter: V

600

GS

10 V

7 V

500

6.5 V

6 V

[A]

D

I

400

300

parameter: V

= (ID); Tj = 25 °C

DS(on)

14

12

10

]

Ω

8

[m

DS(on)

6

R

GS

5.5 V

6 V

6.5 V

7 V

200

5.5 V

100

5 V

0

0246

VDS [V]

4

2

0

0 100 200 300 400 500 600

ID [A]

7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance

I

= f(VGS); V

D

parameter: T

600

500

400

[A]

D

I

300

= 6V R

DS

j

= f(Tj); ID = 80 A; V

DS(on)

3

2.5

]

Ω

[m

2

DS(on)

R

GS

= 10 V

10 V

200

175 °C

100

25 °C

-55 °C

0

2345678

VGS [V]

1.5

1

-60 -20 20 60 100 140 180

Tj [°C]

Rev. 1.0 page 5 2007-04-16

9 Typ. gate threshold voltage 10 Typ. capacitances

IPB160N04S3-H2

V

GS(th)

= f(Tj); V

parameter: I

4

3.5

3

[V]

2.5

GS(th)

V

2

1.5

1

-60 -20 20 60 100 140 180

= V

GS

DS

D

1500µA

150µA

C = f(VDS); V

5

10

4

10

= 0 V; f = 1 MHz

GS

Ciss

[pF]

Tj [°C]

C

3

10

0 5 10 15 20 25 30

VDS [V]

Coss

Crss

11 Typical forward diode characteristicis 12 Typ. avalanche characteristics

IF = f(V

parameter: T

) I

SD

j

3

10

2

10

[A]

F

I

1

10

0

10

175 °C

25 °C

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSD [V]

= f(tAV)

AS

parameter: T

1000

100

[A]

AV

I

10

1

1 10 100 1000

j(start)

150°C

tAV [µs]

100°C

25°C

Rev. 1.0 page 6 2007-04-16

IPB160N04S3-H2

13 Typical avalanche energy 14 Drain-source breakdown voltage

E

= f(Tj) V

AS

parameter: I

D

= f(Tj); ID = 1 mA

BR(DSS)

4000

52

3500

48

44

3000

2500

20 A

[V]

2000

[mJ]

AS

E

1500

40 A

BR(DSS)

V

40

1000

80 A

36

500

0

25 75 125 175

32

-60 -20 20 60 100 140 180

Tj [°C]

15 Typ. gate charge 16 Gate charge waveforms

Tj [°C]

V

= f(Q

GS

gate

parameter: V

12

10

8

[V]

6

GS

V

4

2

0

0 20 40 60 80 100 120

); ID = 80 A pulsed

DD

Q

gate

[nC]

8 V

32 V

V

V

GS

GS

Q

Q

g

g

Q

Q

gate

gate

Q

Q

Q

gs

gs

Q

gd

gd

Rev. 1.0 page 7 2007-04-16

IPB160N04S3-H2

r

Published by
Infineon Technologies AG
81726 Munich, Germany

© Infineon Technologies AG 2007

All Rights Reserved.

Legal Disclaime

The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.

Rev. 1.0 page 8 2007-04-16

Revision History

Version Date Changes

IPB160N04S3-H2

Rev. 1.0 page 9 2007-04-16