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查询IPB07N03L供应商
OptiMOS Buck converter series
Feature
• N-Channel
• Logic Level
• Low On-Resistance R
DS(on)
• Excellent Gate Charge x R
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
DS(on)
product (FOM)
IPP07N03L
IPB07N03L
Product Summary
V
DS
R
I
max. SMD version 5.9 mΩ
DS(on)
D
P- TO263 -3-2 P- TO220 -3-1
30 V
80 A
• dv/dt rated
• Ideal for fast switching buck converters
Type Package Ordering Code
IPP07N03L P- TO220 -3-1 Q67042-S4051
IPB07N03L P- TO263 -3-2 Q67042-S4082
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC = 25°C ,1)
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=20A, VDD=25V, RGS=25Ω
1)
I
D
I
D puls
E
AS
Marking
07N03L
07N03L
80
80
320
30 mJ
A
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/µs, T
Gate source voltage V
Power dissipation
TC=25°C
Operating and storage temperature T
IEC climatic category; DIN IEC 68-1 55/175/56
jmax
=175°C
2) E
jmax
Page 1
AR
dv/dt 6 kV/µs
GS
P
tot
, T
j
stg
15
±20
150 W
-55... +175
V
°C
2002-10-17
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IPP07N03L
IPB07N03L
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area
3)
R
R
thJC
thJA
- 0.68 1 K/W
-
-
-
-
62
40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = V
ID = 80 µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
30 - - V
1.2 1.6 2
-
-
0.01
10
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=50A
VGS=4.5V, ID=50A, SMD version
Drain-source on-state resistance
VGS=10V, ID=50A
VGS=10V, ID=50A, SMD version
1
Current limited by bondwire ; with an R
information see app.-note ANPS071E available at www.infineon.com/optimos
2
Defined by design. Not subject to production test.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
Diagrams are related to straight lead versions
4)
= 1K/W the chip is able to carry ID= 123A at 25°C, for detailed
thJC
I
GSS
R
DS(on)
R
DS(on)
- 1 100 nA
-
-
-
-
7
6.6
5
4.6
10
9.7
6.2
5.9
mΩ
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2002-10-17
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IPP07N03L
IPB07N03L
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Gate resistance R
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
fs
iss
oss
rss
G
d(on)
r
d(off)
f
gs
gd
g
VDS≥2*ID*R
ID=80A
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
44 88 - S
- 1900 2350 pF
- 740 990
- 175 265
- 2.2 - Ω
VDD=15V, VGS=10V,
ID=20A,
RG=3.6Ω
- 10.4 15.6 ns
- 23 35
- 73 109
- 61 91
VDD=15V, ID=20A - 5 7 nC
- 16 25
VDD=15V, ID=20A,
VGS=0 to 5V
- 27 34
Output charge Q
Gate plateau voltage V
Reverse Diode
Inverse diode continuous
I
forward current
Inv. diode direct current, pulsed
I
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
oss
(plateau)
S
SM
SD
rr
rr
VDS=15V, ID=20A,
VGS=0V
VDD=15V, ID=20A - 3.1 - V
- 26.4 33 nC
TC=25°C - - 80 A
- - 320
VGS=0V, IF=80A - 0.9 1.3 V
VR=15V, I
diF/dt=100A/µs
F=lS
,
- 41 51 ns
- 46 58 nC
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2002-10-17
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IPP07N03L
IPB07N03L
1 Power dissipation
P
= f (TC)
tot
IPP07N03L
160
W
120
tot
100
P
80
60
40
20
2 Drain current
ID = f (TC)
parameter: VGS≥ 10 V
IPP07N03L
90
A
70
60
D
I
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160°C190
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
3
IPP07N03L
10
A
D
I
/
DS
2
10
D
I
1
10
V
=
DS(on)
R
tp = 22.0µs
DC
T
C
100 µs
1 ms
10 ms
0
0 20 40 60 80 100 120 140 160°C190
4 Max. transient thermal impedance
Z
= f (tp)
thJC
parameter : D = tp/T
IPP07N03L
1
10
K/W
0
10
-1
10
thJC
Z
-2
10
-3
10
single pulse
10
-4
T
D = 0.50
0.20
0.10
0.05
0.02
0.01
C
10
0
10
-5
10
-7
-6
-5
-4
-3
-1
10
0
10
1
V
V
DS
10
2
10
10
10
10
10
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-2
10
s
t
2002-10-17
0
10
p
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IPP07N03L
IPB07N03L
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
IPP07N03L
190
P
= 150W
tot
A
160
140
120
D
I
100
h
i
80
60
40
20
0
0 1 2 3 4 5 6
g
f
e
d
c
b
a
VGS [V]
a 3.0
b 3.2
c 3.4
d 3.6
e 3.8
f 4.0
g 4.5
h 10.0
i 5.0
V
V
DS
6 Typ. drain-source on resistance
R
parameter: V
8
= f (ID)
DS(on)
GS
IPP07N03L
20
mΩ
d
e
16
14
DS(on)
R
12
10
8
6
4
V
[V] =
GS
2
d
e
f
g
3.6
3.8
4.0
0
0 20 40 60 80 100 120
4.5
h
10.0
5.0
f
i
g
h
i
160
A
I
D
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x R
DS(on)max
parameter: tp = 80 µs
160
A
120
D
100
I
80
60
40
20
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: g
120
fs
S
100
90
80
fs
g
70
60
50
40
30
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V
V
GS
5
Page 5
0
0 20 40 60 80
A
I
D
2002-10-17
120
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IPP07N03L
IPB07N03L
9 Drain-source on-state resistance
R
DS(on)
= f (Tj)
parameter : ID = 50 A, VGS = 10 V
IPP07N03L
15
mΩ
12
11
10
DS(on)
R
9
8
7
6
5
4
3
2
1
0
-60 -20 20 60 100 140
98%
typ
°C
10 Typ. gate threshold voltage
V
= f (Tj)
GS(th)
parameter: VGS = V
3
DS
V
1mA
2
GS(th)
V
1.5
83µA
1
0.5
200
T
j
0
-60 -20 20 60 100
°C
180
T
j
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
4
10
pF
C
3
10
2
10
0 5 10 15 20
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
3
IPP07N03L
10
A
C
iss
C
oss
C
rss
V
30
DS
V
2
10
F
I
1
10
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
0
10
0 0.4 0.8 1.2 1.6 2 2.4
3
V
V
SD
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2002-10-17
Page 7
IPP07N03L
IPB07N03L
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 20 A, VDD = 25 V, RGS = 25 Ω
30
mJ
20
AS
E
15
10
5
15 Drain-source breakdown voltage
V
(BR)DSS
= f (Tj)
parameter: ID=10 mA
IPP07N03L
36
V
34
33
(BR)DSS
V
32
31
30
29
28
0
25 45 65 85 105 125 145
14 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: ID = 20 A pulsed
IPP07N03L
16
V
12
GS
10
V
0.2 V
DS max
8
0.5 V
DS max
0.8 V
6
DS max
4
°C
T
185
j
27
-60 -20 20 60 100 140
°C
T
200
j
2
0
0 10 20 30 40 50
nC
Q
Gate
65
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2002-10-17
Page 8
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
IPP07N03L
IPB07N03L
Page 8
2002-10-17
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