Page 1
DS
DS(on)
D
DS(on)
jmax
AR
GS
j
stg
查询IPB04N03L供应商
OptiMOS Buck converter series
Feature
• N-Channel
• Logic Level
• Excellent Gate Charge x R
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
product (FOM)
IPP04N03L
IPB04N03L
Product Summary
V
R
max. SMD version 3.9 mΩ
I
P- TO263 -3-2 P- TO220 -3-1
30 V
80 A
• Ideal for fast switching buck converter
Type Package Ordering Code
IPP04N03L P- TO220 -3-1 Q67042-S4108
IPB04N03L P- TO263 -3-2 Q67042-S4107
Marking
04N03L
04N03L
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC=25°C
1)
1)
I
D
80
A
80
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=55A, VDD=25V, RGS=25Ω
I
D puls
E
AS
320
60 mJ
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/µs, T
jmax
=175°C
2)
E
dv/dt
Gate source voltage V
Power dissipation
TC=25°C
P
Operating and storage temperature T
tot
, T
18
6 kV/µs
±20
188 W
-55... +175
IEC climatic category; DIN IEC 68-1 55/175/56
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V
°C
2003-01-17
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IPP04N03L
thJC
IPB04N03L
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case R
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area
3)
R
thJA
- 0.51 0.8 K/W
-
-
-
-
62
40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = V
ID = 130 µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
30 - - V
1.2 1.6 2
-
-
0.01
10
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=45A
VGS=4.5V, ID=45A, SMD version
Drain-source on-state resistance
VGS=10V, ID=45A
VGS=10V, ID=45A, SMD version
1
Current limited by bondwire ; with an R
information see app.-note ANPS071E available at www.infineon.com/optimos
2
Defined by design. Not subject to production test.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
Diagrams are related to straight lead versions
4)
= 0.8K/W the chip is able to carry ID= 165A at 25°C, for detailed
thJC
I
GSS
R
DS(on)
R
DS(on)
- 1 100 nA
-
-
-
-
4.9
4.6
3.6
3.2
6.2
5.9
4.2
3.9
mΩ
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2003-01-17
Page 3
IPP04N03L
iss
oss
rss
G
d(on)
r
d(off)
f
gs
gd
(plateau)
SM
SD
rr
rr
IPB04N03L
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Gate resistance R
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
fs
VDS≥2*ID*R
ID=80A
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
11.5 23 - S
- 2930 3900 pF
- 1150 1520
- 270 420
- 1.9 - Ω
VDD=15V, VGS=10V,
ID=20A,
RG=2.2Ω
- 12.7 19 ns
- 20 30
- 54.2 81.3
- 18.9 28.3
VDD=15V, ID=40A - 9.9 12.4 nC
- 23 35
g
VDD=15V, ID=40A,
VGS=0 to 5V
- 41.8 52
Output charge Q
Gate plateau voltage V
Reverse Diode
Inverse diode continuous
I
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
oss
S
VDS=15V, ID=40A,
VGS=0V
VDD=15V, ID=40A - 3.2 - V
TC=25°C - - 80 A
- 40.4 50 nC
- - 320
VGS=0V, IF=80A - 0.9 1.2 V
VR=-V, I
diF/dt=100A/µs
F=lS
,
- 50 62 ns
- 61 76 nC
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2003-01-17
Page 4
IPP04N03L
IPB04N03L
1 Power dissipation
P
= f (TC)
tot
IPP04N03L
200
W
160
140
tot
P
120
100
80
60
40
20
2 Drain current
ID = f (TC)
parameter: VGS≥ 10 V
IPP04N03L
90
A
70
60
D
I
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160°C190
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
3
IPP04N03L
10
A
2
10
D
I
1
10
DS(on)
R
D
I
/
DS
V
=
tp = 30.0µs
DC
T
C
100 µs
1 ms
10 ms
0
0 20 40 60 80 100 120 140 160°C190
4 Max. transient thermal impedance
Z
= f (tp)
thJC
parameter : D = tp/T
IPP04N03L
1
10
K/W
0
10
-1
10
thJC
Z
-2
10
10
10
-3
-4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
C
10
0
10
-5
10
-7
-6
-5
-4
-3
-1
10
0
10
1
V
V
DS
10
2
10
10
10
10
10
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-2
10
s
t
2003-01-17
0
10
p
Page 5
IPP04N03L
IPB04N03L
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
IPP04N03L
190
P
= 188W
tot
A
160
140
D
120
I
100
80
60
40
20
j
i
h
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VGS [V]
g
f
e
d
c
b
a
a 2.5
b 2.8
c 3.0
d 3.3
e 3.5
f 3.8
g 4.0
h 4.3
i 4.5
j 10.0
V
V
DS
6 Typ. drain-source on resistance
R
DS(on)
parameter: V
5
= f (ID)
GS
IPP04N03L
14
Ω
12
11
10
DS(on)
9
R
8
7
6
5
4
3
V
2
[V] =
GS
e
3.5
1
0
0 20 40 60 80 100
3.8
e
f
g
h
4.3
4.5
i
4.0
10.0
f
j
g
h
i
j
140
A
I
D
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x R
DS(on)max
parameter: tp = 80 µs
160
A
120
D
100
I
80
60
40
20
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: g
35
S
25
fs
g
20
15
10
5
fs
0
0 0.5 1 1.5 2 2.5 3 3.5
V
V
GS
4.5
Page 5
0
0 20 40 60 80 100 120 140 160
2003-01-17
I
A
200
D
Page 6
IPP04N03L
IPB04N03L
9 Drain-source on-state resistance
R
DS(on)
= f (Tj)
parameter : ID = 45 A, VGS = 10 V
IPP04N03L
10
Ω
8
7
DS(on)
R
6
5
4
3
2
1
98%
typ
10 Typ. gate threshold voltage
V
parameter: VGS = V
GS(th)
2.5
V
GS(th)
V
1.5
0.5
= f (Tj)
DS
650µA
130µA
1
0
-60 -20 20 60 100 140
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
4
10
pF
C
3
10
°C
C
C
200
T
j
0
-60 -20 20 60 100
°C
180
T
j
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
3
IPP04N03L
10
A
iss
2
10
F
oss
C
rss
I
1
10
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
2
10
0 5 10 15 20
0
V
30
V
DS
Page 6
10
0 0.4 0.8 1.2 1.6 2 2.4
3
V
V
SD
2003-01-17
Page 7
IPP04N03L
IPB04N03L
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 55 A, VDD = 25 V, RGS = 25 Ω
60
mJ
40
AS
E
30
20
10
15 Drain-source breakdown voltage
V
(BR)DSS
= f (Tj)
parameter: ID=10 mA
IPP04N03L
36
V
34
33
(BR)DSS
V
32
31
30
29
28
0
25 45 65 85 105 125 145
14 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: ID = 40 A pulsed
IPP04N03L
16
V
12
GS
10
V
0.2 V
0.5 V
0.8 V
DS max
DS max
DS max
8
6
4
°C
T
185
j
27
-60 -20 20 60 100 140
°C
T
200
j
2
0
0 20 40 60 80
nC
Q
120
Gate
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2003-01-17
Page 8
IPP04N03L
IPB04N03L
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 8
2003-01-17
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