Datasheet IN74HCT574AN, IN74HCT574ADW Datasheet (INTEGRAL)

Page 1
TECHNICAL DATA
Octal 3-State Noninverting D Flip-Flop
High-Performance Silicon-Gate CMOS
The IN74HCT574A is identical in pinout to the LS/ALS574. This device may be used as a level converter for interfacing TTL or NMOS outputs to High-Speed CMOS inputs.
•
TTL/NMOS Compatible Input Levels
•
Outputs Directly Interface to CMOS, NMOS, and TTL
•
Operating Voltage Range: 4.5 to 5.5 V
•
Low Input Current: 1.0 µA
IN74HCT574A
ORDERING INFORMATION
IN74HCT574AN Plastic
IN74HCT574ADW SOIC
TA = -55° to 125° C for all packages
LOGIC DIAGRAM
PIN 20=V
PIN 10 = GND
CC
PIN ASSIGNMENT
FUNCTION TABLE
Inputs Output
Output Enable
LHH LLL LL,H, X no
HXXZ
X = don’t care Z = high impedance
Clock D Q
change
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Page 2
IN74HCT574A
MAXIMUM RATINGS
*
Symbol Parameter Value Unit
V
CC
V
V
OUT
I
IN
I
OUT
I
CC
P
DC Supply Voltage (Referenced to GND) -0.5 to +7.0 V DC Input Voltage (Referenced to GND) -1.5 to VCC +1.5 V
IN
DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V DC Input Current, per Pin DC Output Current, per Pin DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Plastic DIP+
D
SOIC Package+
±
20
±
35
±
75
750 500
Tstg Storage Temperature -65 to +150
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
260
(Plastic DIP or SOIC Package)
*
Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
mA mA mA
mW
°
C
°
C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
VIN, V
T
A
tr, t
f
This device c ontains p rote ction ci rcuitr y to guard a gainst damage d ue to high st atic voltages or electr ic fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, V GND≤(V
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V Unused outputs must be left open.
DC Supply Voltage (Referenced to GND) 4.5 5.5 V DC Input Voltage, Output Voltage (Referenced to GND) 0 V
OUT
Operating Temperature, All Package Types -55 +125 Input Rise and Fall Time (Figure 1) 0 500 ns
IN
or V
OUT
)≤VCC.
and V
IN
should be constrained to the range
OUT
CC
V
°
C
CC
).
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Page 3
IN74HCT574A
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
Symbol Parameter Test Conditions V
V
V
V
OH
V
OL
I
IN
Minimum High-Level
IH
Input Voltage Maximum Low -
IL
Level Input Voltage Minimum High-Level
Output Voltage
Maximum Low-Level Output Voltage
Maximum Input
V
=0.1 V or VCC-0.1 V
OUT
≤
I
20 µA
OUT
V
=0.1 V or VCC-0.1 V
OUT
 ≤
I
20 µA
OUT
VIN=VIH or V
 ≤
I
OUT
VIN=VIH or V
 ≤
I
OUT
VIN= VIL or V
 ≤
I
OUT
VIN= VIL or V
 ≤
I
OUT
IL
20 µA
IL
6.0 mA
IH
20 µA
IH
6.0 mA
VIN=VCC or GND 5.5
Leakage Current
I
OZ
I
CC
Maximum Three State Leakage Current
Maximum Qui escent Supply Current
Output in High-Impedance State V
=VIH or V
IN
V
= VCC or GND
OUT
IL
VIN=VCC or GND
=0µA
I
OUT
(per Package)
CC
Additional Quiescent
∆
I
Supply Current
VIN=2.4 V, Any One Input V
IN=VCC
or GND,
Other Inputs I
=0µA
OUT
V
CC
Guaranteed Limit
25 °C
to
≤
85
°
C
≤
125
°
-55°C
4.5
5.5
4.5
5.5
4.5
5.5
2.0
2.0
0.8
0.8
4.4
5.4
2.0
2.0
0.8
0.8
4.4
5.4
2.0
2.0
0.8
0.8
4.4
5.4
4.5 3.98 3.84 3.7
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
4.5 0.26 0.33 0.4
5.5
±
±
0.1
0.5
±
±
1.0
5.0
±
±
5.5 4.0 40 160
≥
-55°C25°C to 125°C
5.5 2.9 2.4
C
1.0
10
Unit
V
V
V
V
µ
A
µ
A
µ
A
mA
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Page 4
IN74HCT574A
AC ELECTRICAL CHARACTERISTICS
Symbol Parameter
t
t
t
t
TLH
PLH
PLZ
PZH
f
max
, t
, t
, t
, t
C
IN
C
OUT
C
PD
Maximum Clock Frequency (50 % Duty Cycle) (Figures 1 and 4)
Maximum Propagati on Delay, Clock to Q
PHL
(Figures 1 and 4) Maximum Propagation Delay, Output Enable to Q
PHZ
(Figures 2 and 5) Maximum Propagation Delay, Output Enable to Q
PZL
(Figures 2 and 5) Maximum Output Transition Time, Any Output
THL
(Figures 1 and 4) Maximum Input Capacitance 10 10 10 pF Maximum Three-State Output Capacitance
(Output in High-Impedance State)
Power Dissipation Capacitance (Per Flip-Flop) Used to determine the no-load dynamic power
consumption: P
D=CPDVCC
2
f+ICCV
CC
(VCC =5.0 V ± 10%, CL=50pF,Input tr=tf=6.0 ns)
Guaranteed Limit
25 °C
≤85°
≤
C
125°C
Unit
to
-55°C 30 24 20 MHz
30 38 45 ns
28 35 42 ns
28 35 42 ns
12 15 18 ns
15 15 15 pF
Typical @25°C,V
=5.0 V
CC
58 pF
TIMING REQUIREMENTS
Symbol Parameter
t
SU
t
h
t
w
t
r, tf
Minimum Set up Time, Data to Clock (Figure 3)
Minimum Hold T ime, Clock to Data (Figure 3)
Minimum Pulse W idth , Clock (Figure 1)
Maximum Input Rise and Fall Times (Figure 1)
(VCC =5.0 V ± 10%, CL=50pF,Input tr=tf=6.0 ns)
Guaranteed Limit
25 °C to
≤85°
C
≤
125°C
-55°C 10 13 15 ns
555ns
15 19 22 ns
500 500 500 ns
Unit
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IN74HCT574A
Figure 1. Switching Waveforms Figure 2. Switching Waveforms
Figure 3. Switching Waveforms
Figure 4. Test Circuit Figure 5. Test Circuit
EXPANDED LOGIC DIAGRAM
422
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