Datasheet IN74HCT241AN, IN74HCT241ADW Datasheet (INTEGRAL)

TECHNICAL DATA

Octal 3-State Noninverting Buffer/Line
Driver/Line Receiver

High-Performance Silicon-Gate CMOS

The IN74HCT241A is identical in pinout to the LS/ALS241. The
IN74HCT241 may be used as a level converter for interfacing TTL or
NMOS outputs to High Speed CMOS inputs.

This octal noninverting buffer/line driver/line receiver is designed
to be used with 3-state memory address drivers, clock drivers, and
other bus-oriented systems. The de vice has noninverting outputs and
two output enables. Enable A is active-low and Enable B is active­high.

•

TTL/NMOS Compatible Input Levels

•

Outputs Directly Interface to CMOS, NMOS, and TTL

•

Operating Voltage Range: 4.5 to 5.5 V

•

Low Input Current: 1.0 µA

IN74HCT241A

ORDERING INFORMATION

IN74HCT241AN Plastic

IN74HCT241ADW SOIC

TA = -55° to 125° C for all packages

LOGIC DIAGRAM

PIN 20=V

PIN 10 = GND

CC

PIN ASSIGNMENT

FUNCTION TABLE

Inputs Output Inputs Output

EnableAAYAEnableBBYB

LLL HLL
LHH HHH
HXZ LXZ

X = don’t care
Z = high impedance

286

IN74HCT241A

MAXIMUM RATINGS

*

Symbol Parameter Value Unit

V

CC

V

V

OUT

I

IN

I

OUT

I

CC

P

DC Supply Voltage (Referenced to GND) -0.5 to +7.0 V
DC Input Voltage (Referenced to GND) -1.5 to VCC +1.5 V

IN

DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V
DC Input Current, per Pin
DC Output Current, per Pin
DC Supply Current, VCC and GND Pins
Power Dissipation in Still Air, Plastic DIP+

D

SOIC Package+

±

20

±

35

±

75

750
500

Tstg Storage Temperature -65 to +150

T

Lead Temperature, 1 mm from Case for 10 Seconds

L

260

(Plastic DIP or SOIC Package)

*

Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C

SOIC Package: : - 7 mW/°C from 65° to 125°C

mA
mA
mA

mW

°

C

°

C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Min Max Unit

V

CC

VIN, V

T

A

tr, t

f

This device c ontains p rote ction ci rcuitr y to guard a gainst damage d ue to high st atic voltages or electr ic
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, V
GND≤(V

Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
Unused outputs must be left open.

DC Supply Voltage (Referenced to GND) 4.5 5.5 V
DC Input Voltage, Output Voltage (Referenced to GND) 0 V

OUT

Operating Temperature, All Package Types -55 +125
Input Rise and Fall Time (Figure 1) 0 500 ns

IN

or V

OUT

)≤VCC.

and V

IN

should be constrained to the range

OUT

CC

CC

V

°

C

).

287

IN74HCT241A

DC ELECTRICAL CHARACTERISTICS

(Voltages Referenced to GND)

Symbol Parameter Test Conditions V

V

Minimum High-

IH

Level Input

V

= VCC-0.1 V

OUT



≤

I

OUT

20 µA

Voltage

V

Maximum Low -

IL

Level Input

V



I

OUT
OUT

= 0.1 V

 ≤

20 µA

Voltage

V

OH

Minimum High­Level Output

VIN= V



 ≤

I

OUT

IH

20 µA

Voltage

VIN= V

IH



 ≤

I

6.0 mA

OUT

V

OL

Maximum Low­Level Output

VIN = V



 ≤

I

OUT

IL

20 µA

Voltage

VIN= V

IL



 ≤

I

6.0 mA

OUT

I

IN

Maximum Input

VIN=VCC or GND 5.5

Leakage Current

I

OZ

I

CC

Maximum three
State Leakage
Current

Maximum
Quiescent Supply

Output in High-Impedance State
V

= VIL or V

IN

V

OUT=VCC

V

IN=VCC

=0µA

I

OUT

IH

or GND

or GND

Current
(per Package)

CC

Additional

∆

I

Quiescent
Supply Current

NOTE: Total Supply Current = I

VIN = 2.4 V, Any One Input

CC

V
I

OUT

+ ∑∆I

or GND, Other Inputs

IN=VCC

=0µA

CC

V

CC

Guaranteed Limit

25 °C

≤

85

to

°

C

≤

125

°

-55°C

4.5

5.5

4.5

5.5

4.5

5.5

2.0

2.0

0.8

0.8

4.4

5.4

2.0

2.0

0.8

0.8

4.4

5.4

2.0

2.0

0.8

0.8

4.4

5.4

4.5 3.98 3.84 3.7

4.5

5.5

0.1

0.1

0.1

0.1

0.1

0.1

4.5 0.26 0.33 0.4

5.5

±

±

0.1

0.5

±

±

±

1.0

5.0±10.0

5.5 4.0 40 160

≥

-55°C25°C to
125°C

5.5 2.9 2.4

C

1.0

Unit

V

V

V

V

µ

A

µ

A

µ

A

mA

288

IN74HCT241A

AC ELECTRICAL CHARACTERISTICS

Symbol Parameter

t

t

t

t

TLH

PLH

PLZ

PZH

, t

, t

, t

, t

C

IN

C

OUT

C

PD

Maximum Propagation Delay, A to YA or B to

PHL

YB (Figures 1 and 3)
Maximum Propagation Delay, Output Enable to

PHZ

YA or YB (Figures 2 and 4)
Maximum Propagation Delay, Output Enable to

PZL

YA or YB (Figures 2 and 4)
Maximum Output Transition Time, Any Output

THL

(Figures 1 and 3)
Maximum Input Capacitance 10 10 10 pF
Maximum Three-State Output Capacitance

(Output in High-Impedance State)

Power Dissipation Capacitance (Per Enable
Output)

Used to determine the no-load dynamic power
consumption:
P

D=CPDVCC

2

f+ICCV

CC

(VCC=5.0 V ± 10%, CL=50pF,Input tr=tf=6.0 ns)

Guaranteed Limit

25 °C

≤85°

C≤125°C

Unit

to

-55°C
23 29 35 ns

30 38 45 ns

26 33 39 ns

12 15 18 ns

15 15 15 pF

Typical @25°C,V

=5.0 V

CC

55 pF

Figure 1. Switching Waveforms Figure 2. Switching Waveforms

289

IN74HCT241A

Figure 3. Test Circuit Figure 4. Test Circuit

EXPANDED LOGIC DIAGRAM

(1/4 of the Device)

290