Datasheet IN74ACT533N, IN74ACT533DW Datasheet (INTEGRAL)

Page 1
Octal 3-State Inverting Transparent Latch
High-Speed Silicon-Gate CMOS
The IN74ACT533 is identical in pinout to the LS/ALS533, HC/HCT533. The IN74ACT533 may be used as a level converter for interfacing TTL or NMOS outputs to High Speed CMOS inputs.
The Output Enable input does not affect the state of the latches, but when Output Enable is high, all device outputs are forced to the high­impedance state. Thus, data may be latched even when the outputs are not enabled.
TTL/NMOS Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1.0 µA; 0.1 µA @ 25°C
Outputs Source/Sink 24 mA
3-State Outputs for Bus Interfacing
TECHNICAL DATA
IN74ACT533
ORDERING INFORMATION
IN74ACT533N Plastic
IN74ACT533DW SOIC
TA = -40° to 85° C for all
packages
PIN ASSIGNMENT
LOGIC DIAGRAM
IN 20=V
PIN 10 = GND
CC
FUNCTION TABLE
Output Enable
LHHL LHLH LLXno
HXXZ
X = don’t care Z = high impedance
P
Inputs Output
Latch
Enable
DQ
change
441
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IN74ACT533
MAXIMUM RATINGS
*
Symbol Parameter Value Unit
V
CC
V
V
OUT
I
IN
I
OUT
I
CC
P
DC Supply Voltage (Referenced to GND) -0.5 to +7.0 V DC Input Voltage (Referenced to GND) -0.5 to VCC +0.5 V
IN
DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V DC Input Current, per Pin DC Output Sink/Source Current, per Pin DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Plastic DIP+
D
SOIC Package+
±
20
±
50
±
50
750 500
Tstg Storage Temperature -65 to +150
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
260
(Plastic DIP or SOIC Package)
*
Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
mA mA mA
mW
°
C
°
C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
VIN, V
T
J
T
A
I
OH
I
OL
tr, t
f
*
VIN from 0.8 V to 2.0 V
This device c ontains p rote ction ci rcuitr y to guard a gainst damage d ue to high st atic voltages or electr ic fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, V GND≤(V
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V Unused outputs must be left open.
DC Supply Voltage (Referenced to GND) 4.5 5.5 V DC Input Voltage, Output Voltage (Referenced to GND) 0 V
OUT
Junction Temperature (PDIP) 140 Operating Temperature, All Package Types -40 +85 Output Current - High -24 mA Output Current - Low 24 mA Input Rise and Fall Time
(except Schmitt Inputs)
IN
or V
OUT
)≤VCC.
*
V V
=4.5 V
CC
=5.5 V
CC
and V
IN
0 0
should be constrained to the range
OUT
10
8.0
CC
V
°
C
°
C
ns/V
CC
).
442
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IN74ACT533
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
Symbol Parameter Test Conditions V
V
Minimum High-Level
IH
V
= 0.1 V or VCC-0.1 V 4.5
OUT
Input Voltage
V
Maximum Low -
IL
V
= 0.1 V or VCC-0.1 V 4.5
OUT
Level Input Voltage
V
OH
Minimum High-Level
I
OUT
≤ -50 µA
Output Voltage
*
VIN=VIH or V
IL
IOH=-24 mA I
=-24 mA
OH
V
OL
Maximum Low-Level
I
OUT
≤ 50 µA
Output Voltage
*
VIN= VIH or V
IL
IOL=24 mA I
=24 mA
OL
I
IN
Maximum Input
VIN=VCC or GND 5.5
Leakage Current
I
CCT
I
OZ
Additional Max. I
/Input
CC
Maximum Three­State Leakage Current
I
OLD
+Minimum Dynamic
V
IN=VCC
V
IN
V
IN =VCC
V
OUT =VCC
V
OLD
- 2.1 V 5.5 1.5 mA
(OE)= VIH or V
IL
or GND
or GND
=1.65 V Max 5.5 75 mA
Output Current
I
OHD
+Minimum Dynamic
V
=3.85 V Min 5.5 -75 mA
OHD
Output Current
I
CC
Maximum Quiescent
VIN=VCC or GND 5.5 8.0 80 Supply Current (per Package)
*
All outputs loaded; thresholds on input associated with output under test.
+Maximum test duration 2.0 ms, one output loaded at a time.
V
5.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
5.5
CC
Guaranteed Limits
25 °C-40
2.0
2.0
0.8
0.8
4.4
5.4
3.86
4.86
0.1
0.1
0.36
0.36
±
0.1
±
0.5
°
C to
85°C
2.0
2.0
0.8
0.8
4.4
5.4
3.76
4.76
0.1
0.1
0.44
0.44
±
1.0
±
5.0
Unit
V
V
V
V
µ
A
µ
A
µ
A
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IN74ACT533
AC ELECTRICAL CHARACTERISTICS
Symbol Parameter
t t t
t
t
t
t
t
C
PLH
PHL
PLH
PHL
PZH
PZL
PHZ
PLZ
IN
Propagation Delay, Input D to Q (Figure 1) 2.5 10.5 2.0 11.5 ns Propagation Delay, Input D to Q (Figure 1) 2.5 10.0 2.0 11.0 ns Propagation Delay, Latch Enable to Q
(Figure 2) Propagation Delay, Latch Enable to Q
(Figure 2) Propagation Delay, Output Enable to Q
(Figure 3) Propagation Delay, Output Enable to Q
(Figure 3) Propagation Delay, Output Enable to Q
(Figure 3) Propagation Delay, Output Enable to Q
(Figure 3) Maximum Input Capacitance 4.5 4.5 pF
(VCC=5.0 V ± 10%, CL=50pF,Input tr=tf=3.0 ns)
Guaranteed Limits
25 °C-40
°
C to 85°C
Min Max Min Max
2.5 10.5 2.0 11.5 ns
2.5 10.5 2.0 11.5 ns
2.0 10.0 1.5 11.0 ns
2.0 10.0 1.5 11.0 ns
2.0 10.0 1.5 11.0 ns
2.0 10.0 1.5 11.0 ns
Unit
C
PD
TIMING REQUIREMENTS
Power Dissipation Capacitance 40 pF
(VCC=5.0 V ± 10%, CL=50pF, Input tr=tf=3.0 ns)
Symbol Parameter
t
su
Minimum Setup Time, Input D to Latch Enable (Figure 4)
t
h
Minimum Hold Time, Latch Enable to Input D (Figure 4)
t
w
Minimum Pulse Width, Latch Enable (Figure 2)
Typical @25°C,VCC=5.0 V
Guaranteed Limits
25 °C-40
°
C to
85°C
3.0 4.0 ns
2.0 2.5 ns
5.0 6.0 ns
Unit
444
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IN74ACT533
Figure 1. Switching Waveforms Figure 2. Switching Waveforms
Figure 3. Switching Waveforms Figure 4. Switching Waveforms
EXPANDED LOGIC DIAGRAM
445
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