
EMZ2 / UMZ2N / FMY4A / IMZ2A
Transistors
Power management (dual transistors)
EMZ2 / UMZ2N / FMY4A / IMZ2A
!!!!Feature
1) Both a 2SA1037AK chip and 2SC2412K chip in a
EMT or UMT or SMT package.
!!!!Equivalent circuits
EMZ2 / UMZ2N
(3) (2) (1)
Tr
2
Tr
IMZ2A
(4) (5) (6)
Tr
1
2
Tr
1
!!!!External dimensions (Units : mm)
EMZ2
(3)
(4)
0.5
1.0
(2)(5)
0.22
0.13
ROHM : EMT6
0.5
(1)
(6)
1.2
1.6
Each lead has same dimensions
1.6
0.5
(4) (5) (6)
FMY4A
(3)
(4) (5)
Tr
1
Tr
2
(2) (1)
(3) (2) (1)
!!!!Absolute maximum ratings (Ta = 25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
EMZ2, UMZ2N
FMY4A, IMZ2A
V
V
V
Tstg
CBO
CEO
EBO
I
C
P
C
Tj
Limits
1Tr2
Tr
−60 60
−50 50 V
−67
−150 150
150 (TOTAL)
300 (TOTAL)
150
−55~+150
Unit
mW
V
V
mA
°C
°C
!!!!Package, marking, and packaging specifications
Part No. UMZ2N
Package
Marking
Code
Basic ordering unit (pieces)
EMZ2
EMT6
Z2
T2R
8000
UMT6
Z2
TR
3000
FMY4A
SMT5
Y4
T148
3000
SMT6
Z2
T108
3000
IMZ2A
UMZ2N
0.2
0.15
0.1Min.
ROHM : UMT6
EIAJ : SC-88
FMY4A
0.3
1
∗
2
∗
0.15
0.3to0.6
ROHM : SMT5
EIAJ : SC-74A
IMZ2A
0.3
0.15
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
)
)
3
4
(
(
)
5
(
)
6
(
)
2
(
)
1
(
)
6
(
)
5
(
)
4
(
0.65
)
2
(
1.3
)
1
(
0.65
1.25
2.1
0.7
0to0.1
Each lead has same dimensions
)
3
(
0.95
1.9
)
4
(
0.95
)
5
(
1.6
2.8
0.8
0to0.1
Each lead has same dimensions
)
1
(
0.95
)
1.9
2
(
0.95
)
3
(
1.6
2.8
1.1
0.8
0to0.1
Each lead has same dimensions
2.0
2.9
2.9
1/2

EMZ2 / UMZ2N / FMY4A / IMZ2A
Transistors
!!!!Electrical characteristics (Ta=25°C)
Tr
1
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Transition frequency
Output capacitance
Transition frequency of the device.
∗
Tr
2
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Transition frequency
Output capacitance
∗
Parameter Symbol Min. Typ. Max. Unit Conditions
transfer ratio
Parameter Symbol Min. Typ. Max. Unit Conditions
transfer ratio
Transition frequency of the device.
BV
BV
BV
V
BV
BV
BV
V
I
CBO
I
EBO
CE(sat)
h
f
Cob
I
CBO
I
EBO
CE(sat)
h
f
Cob
CBO
−60 −− VIC = −50µA
CEO
−50
−6
EBO
−
−
−
120
FE
T
−−1404−5MHzpFV
CBO
60 −−VIC = 50µA
CEO
50
EBO
FE
T
7
−
−
−
120
−−1802−
−
−
−
−
−0.1
−
−0.1
−
−0.5
−
560
−
−
−
−
−
−
0.1
0.1
−
0.4
−
560
−
3.5
V
V
µA
µA
V
−
V
V
µA
µA
V
−
MHzpFV
I
C
= −1mA
I
E
= −50µA
V
CB
= −60V
V
EB
= −6V
I
C/IB
= −50mA/−5mA
V
CE
= −6V , IC = −1mA
CE
= −12V , IE = 2mA , f = 100MHz
CB
= −12V , IE = 0A , f = 1MHz
V
I
C
= 1mA
E
= 50µA
I
V
CB
= 60V
V
EB
= 7V
I
C/IB
= 50mA/5mA
V
CE
= 6V , IC = 1mA
CE
= 12V , IE = −2mA , f = 100MHz
CB
= 12V , IE = 0A , f = 1MHz
V
∗
∗
2/2

Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0