Datasheet IMP560EMA, IMP560ESA Datasheet (IMP)

IMP560

POWER MANAGEMENT

PPoowwer Ef

er Efff

icient

EL Lam

p Dr

p Driviverer

◆ Night lights

◆ Automotive displays

◆ Cellular phones

◆ Pagers

◆ Clocks and radios

◆ Portable GPS receivers

◆ LCD module backlights

◆ 112V peak-to-peak typical AC output voltage

◆ Low input current (w/inductor current)......12mA

◆ Low disabled input current......50nA

◆ Wide operating voltage range - from 2.0V to 6.5V

◆ Simple design requires few passive components

◆ Adjustable output lamp frequency controls lamp

color and power consumption

◆ Adjustable converter frequency for minimum power consumption

◆ IMP803 pin-compatible

◆ MicroSO package option

Block Diagram

–

+

560_01.eps

V

DD

1

L

X

4

C

S

3

V

A

7

V

B

6

R

SW-OSC

2

Switch

Oscillator

Regulation

Control

IMP560

Bridge Output

Driver and

OSC

Q

V

REF

C

GND

5

R

EL-OSC

8

Q

The IMP560 is an Electroluminescent (EL) lamp driver designed for systems with low EL lamp drive voltage requirements. It is ideal for low ambient light applications or where small lamps are used. With just onehalf the inductor current of the IMP803, the IMP560 reduces system power consumption and extends battery life. Input supply voltage range is 2.0V to 6.5V and quiescent current is a low 420µA. Typical EL lamp drive voltage is ±56V.

All four EL lamp-driving functions are on-chip. These are the switchmode power supply, its high-frequency oscillator, the high-voltage H-bridge lamp driver and its low-frequency oscillator. EL lamps of up to 6nF capacitance can be driven to high brightness.

The circuit requires few external components; a single inductor, a single diode, two capacitors and three resistors. Two of these resistors set the frequencies for two internal oscillators. An internal circuit shuts down the switching regulator when the lamp drive voltage exceeds 120V peak-to-peak. This conserves power and extends battery life.

A disable mode puts the chip into a low current drain mode. With a 3.0V supply, quiescent current drops to 200nA maximum, 50nA typical. The chip is disabled by connecting the oscillator frequency setting resistor R

SW

to ground.

The IMP560 is available in MicroSO and SO-8 packages and in die or wafer form.

Key Features

Applications

IMP560



Parameter Symbol Conditions Min Typ Max Units

ON-resistance of MOS Switch R

DS(ON)

I = 100mA 3.5 8 Ω

Output Voltage Regulation V

CS

VDD= 2.0 to 6.5V 52 56 65 V

Output Voltage Peak-to-peak (in regulation) VA-V

B

VDD= 2.0 to 6.5V 104 112 120 V

Quiescent VDDSupply Current, Disabled I

DDIS

V

RSW-OSC

< 100mV 50 200 nA

Input Current at VDDPin I

DD

VDD= 3.0V, See Figure 1 470 700 µA

Input Current at VDDPin I

DD

VDD= 5.0V, See Figure 2 500 750 µA

Input Current: IDDPlus Inductor Current I

IN

VDD= 3.0V, See Figure 1 12 mA

V

A-B

Output Drive Frequency f

EL

VDD= 3.0V, See Figure 1 300 370 430 Hz

Switching Frequency f

SW

VDD= 3.0V, See Figure 1 50 70 90 kHz

Switching Duty Cycle D

SW

VDD= 3.0V, See Figure 1 88 %

Ordering Information

Pin Configuration

4L

X

3C

S

2R

SW-OSC

1V

DD

5 GND

6V

B

7V

A

8R

EL-OSC

560_02.eps

IMP560

SO/MicroSO

Part Number Input Voltage Regulated Output Voltage Temperature Range Pins-Package

IMP560EMA 2.0V to 6.5V YES –40°C to +85°C 8-MicroSO

IMP560ESA 2.0V to 6.5V YES –40°C to +85°C 8-SO

IMP560/D* 2.0V to 6.5V YES 25°C Dice

IMP560/D1** 2.0V to 6.5V YES 25°C Dice

Absolute Maximum Ratings

Supply Voltage, VDD, V

RSW-OSC

and V

REL-OSC

. . . –0.5V to +7.0V

Output Voltage, V

CS

. . . . . . . . . . . . . . . . . . . . . . –0.5V to +120V

Operating Temperature Range . . . . . . . . . . . . . –40°C to +85°C

Storage Temperature Range. . . . . . . . . . . . . . . . –65°C to +150°C

Power Dissipation (SO) . . . . . . . . . . . . . . . . . . . 400mW

Power Dissipation (MicroSO) . . . . . . . . . . . . . . 300mW

Electrical Characteristics

Unless otherwise noted, VDD= 3.0V, RSW= 750kΩ, REL= 2.0MΩ, and TA= 25°C.

Note: All voltages are referenced to GND.

These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability.

Pin Compatible With IMP803

* Disable pad not active

** Disable pad active

IMP560

Electroluminescent Lamp Driver

3

Typical Characteristics

2.0

I

DD

(µA)

VDD (V)

800

700

600

500

400

300

IDD vs. V

DD

3.0 4.0 5.0 6.0

650_8.eps

L = 560µH

100

80

(mA)

60

IN

(V), I

40

CS

V

20

100

80

(mA)

60

IN

0

2.0

VCS, IIN vs. V

L = 100µH

3.0 4.0 5.0 6.0

IN

VIN (V)

VCS, IIN vs. V

L = 470µH

IN

VCS, IIN vs. V

100

L = 330µH

80

V

CS

I

IN

650_03.eps

(mA)

60

IN

(V), I

40

CS

V

20

0

2.0

3.0 4.0 5.0 6.0

VIN (V)

VCS, IIN vs. V

100

L = 560µH

80

V

CS

(mA)

60

IN

V

CS

I

IN

650_06.eps

IN

V

CS

(V), I

CS

V

100

(mA)

IN

(V), I

CS

V

40

20

0

80

60

40

20

0

2.0

3.0 4.0 5.0 6.0

VIN (V)

VCS, IIN vs. V

L = 1mH

3.0 4.0 5.0 6.0

IN

VIN (V)

(V), I

40

CS

V

I

IN

650_04.eps

V

CS

I

IN

650_05.eps

20

0

2.0

3.0 4.0 5.0 6.0

VIN (V)

I

IN

650_07.eps

IMP560



Pin Descriptions

External Components

High–Voltages Present

Pin Number Name Function

1V

DD

Positive voltage supply for the IMP560. Inductor L may be connected here or to a separate unregulated supply.

2R

SW-OSC

Switch-mode resistor pin. Switching frequency is determined by an external resistor, RSW.

3C

S

Boost converter storage capacitor. The voltage across the EL lamp is equal to twice the voltage at CS.

4L

X

Connection to flyback inductance, L.

5 GND Ground pin.

6V

B

EL lamp drive. The lamp is connected in a high-voltage bridge circuit with VBproviding the complementary connection to V

A

. The peak-to-peak AC voltage across the EL lamp is

thus two times VCS.

7V

A

EL lamp drive. (See above)

8R

EL-OSC

The EL lamp oscillator frequency setting pin. The oscillator frequency is controlled by external resistor R

EL

.

External Component Description and Selection Guide

Diode A fast reverse recovery diode, with BV > 100, such as a 1N4148.

Capacitor C

S

This is the high voltage capacitor that stores the inductive energy transferred through the diode. A 100 volt capacitor between 10nF and 100nF is recommended.

Resistor R

EL

The EL lamp oscillator frequency setting resistor. This resistor, connected between the R

EL-OSC

pin and ground, provides an oscillator frequency inversely proportional to REL; as RELincreases, the EL lamp frequency decreases along with the current drawn by the lamp. Lamp color is also determined by this frequency. A 2MΩ resistor between the R

EL-OSC

pin and the

VDDsupply results in a lamp frequency around 350Hz: a 1MΩ resistor will give ≈700Hz.

Resistor R

SW

Switching Oscillator frequency setting resistor. The switching oscillator resistor is connected between the R

SW-OSC

pin and the VDDsupply. The switching frequency is inversely proportional

to the resistor value, dropping as the resistance increases.

Inductor L The inductor provides the voltage boost needed by means of inductive “flyback”. The internal

MOSFET switch alternately opens and closes the ground connection for the inductor at the LXpin. When this internal switch opens, the inductor potential will forward-bias the diode and the current will pass through the storage capacitor CS, charging it to a high voltage.

Smaller inductors are preferred to prevent saturation. As the value of the inductor increases (and the series DC resistance of the inductor decreases), the switching frequency set by R

SW

should be increased to prevent saturation. In general, smaller value inductors that

can handle more current are more desirable when larger area EL lamps must be driven.

The IMP560 generates high voltages and caution should be exercised.

IMP560

Electroluminescent Lamp Driver

5

+

–

V

DD

R

SW-OSC

C

S

L

X

R

EL-OSC

V

A

V

B

GND

8

7

6

5

1

2

3

4

IMP560

2MΩ

750kΩ

560µH

1

VIN = 3.0V

0.1µF

2

L

1N4148

10nF Equivalent to 3 in

2

lamp

Note:

1. Murata part # LQH4N561K04 (DC resistance <14.5Ω)

2. Larger values may be required depending upon supply impedance.

560_09.eps

0.1µF 100V

ON = V

DD

OFF = 0V

Figure 1. 3.0V Application

Test and Application Circuit, 3.0V

Figure 1 shows the IMP560 configured to drive a 3-square-inch EL lamp, represented as a 10nF capacitor.

+

–

ON = V

DD

OFF = 0V

V

DD

R

SW-OSC

C

S

L

X

R

EL-OSC

V

A

V

B

GND

8

7

6

5

1

2

3

4

IMP560

2MΩ

750kΩ

560µH

1

VIN = 5.0V

0.1µF

2

L

1N4148

6 in

2

lamp

Note:

1. Murata part # LQH4N561K04 (DC resistance <14.5Ω)

2. Larger values may be required depending upon supply impedance.

560_10.eps

0.1µF 100V

Figure 2. 5.0V Application

Test and Application Circuit, 5.0V

Figure 2 shows a 5.0V input application driving a 6-square-inch EL lamp.

Application Information

IMP560



Enable/Disable Operation

Figure 3 shows the IMP560 can be enabled via a logic gate that connects R

SW

to VDD, and disabled by connecting it to ground. RELmay

be connected either to V

DD

or to the gate.

RSWConnection IMP560 State

V

DD

Enabled

Ground Disabled

Figure 3. Enable/Disable Operation

Enable/Disable Table

Dual Supply Operation with 1.5V Battery

The IMP560 can also be operate from a single battery cell when a regulated voltage higher than 2.0V is also available. The dual supply configuration, shown in Figure 4, uses the regulated voltage to operate the IMP560 while the energy for the highvoltage boost circuit comes from the battery. The current to run the internal logic is typically 420µA.

The circuit of Figure 4 can also be used with batteries that exceed

6.0V as long as V

DD

does not exceed 6.5V.

+

–

V

DD

R

SW-OSC

C

S

L

X

R

EL-OSC

V

A

V

B

GND

8

7

6

5

1

2

3

4

IMP560

R

EL

Regulated Voltage

(2.0V to 6.5V)

R

SW

L

Battery

Voltage

V

IN

0.1µF

*

1N4148

EL lamp

560_12.eps

0.1µF 100V

C

S

* Larger values may be required

depending upon supply impedance

ON = V

DD

OFF = 0V

Figure 4. Dual Supply Operation with High Battery Voltages

ON = V

DD

OFF = 0V

+

V

IN

–

0.1µF 15V

Note:

1. Murata part # LQH4N561K04 (DC resistance <14.5Ω)

2. Larger values may be required depending upon supply impedance.

CMOS

Gate

R

1

L

1N4148

2

SW

0.1µF 100V

R

EL

1

2

3

4

V

DD

R

SW-OSC

C

S

L

X

IMP560

R

EL-OSC

V

GND

8

7

A

6

B

5

EL lamp

560_11.eps

IMP560

Electroluminescent Lamp Driver

7

SO (8-Pin)

MicroSO (8-Pin)

Package Dimensions

N

D

e

B

D

A2

e

A1

b

E1 E

A

D

E

A1

0.10mm

0.004in

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0°– 8°

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L

H

C

A

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**)niP-8(OSorciM

SO (8-Pin).eps

a

+

C

MicroSO (8-Pin).eps

L

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The IMP logo is a registered trademark of IMP, Inc.

All other company and product names are trademarks of their respective owners.

©

2000 IMP, Inc. Printed in USA Publication #: 2005 Revision: C Issue Date: 09/01/00 Type: Product

IMP560