Datasheet ILX524K Datasheet (Sony)

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2700 × 3pixel CCD Linear Sensor (Color)
For the availability of this product, please contact the sales office.
Description
The ILX524K is a reduction type CCD linear sensor developed for color image scanner. This sensor reads legal-size documents at a density of 300 DPI.
Features
• Number of effective pixels:
8100 pixels (2700 pixels × 3)
• Pixel size: 8µm × 8µm (8µm pitch)
• Single-sided readout
• Ultra low lag / High sensitivity
• Single 12V power supply
• Input clock pulse: CMOS 5V drive
• Number of output 3 (R, G, B)
• Package: 22 pin cer-DIP (400 mil)
Block Diagram
ILX524K
22 pin DIP (Cer-DIP)
-B
φROG 13
-G
φROG 12
-R
φROG 10
11
Absolute Maximum Ratings
• Supply voltage VDD 15 V
• Operating temperature –10 to +55 °C
• Storage temperature –30 to +80 °C
Pin Configuration (Top View)
VOUT-R
GND
φRS
φLH
GND
NC
NC
φ1
1
2
3
4
5
6
7
8
22
21
20
19
18
17
16
15
VOUT-G
VOUT-B
VDD
NC
NC
NC
DD
V
φ2
Driver
15
φ2
Blue
D75
D64
S1
D63
D15 D14
S2700
Read Out Gate
CCD Register
21
OUT-B
V
DD
16
4
φLH V
DD
20
V
Green
D75
D64
S1
D63
D15 D14
Driver
S2700
Red
Read Out Gate
CCD Register
22
OUT-G
V
D75
D64
S1
D63
D15 D14
Driver
S2700
Read Out Gate
CCD Register
1
OUT-R
V
Driver
8
5
3
2
GND φRS GND φ1 GND
14
13
12
NC
φROG
φROG-G
-B
φROG
GND
NC
9
-R
10
11
2700 R 1
2700 B 1
2700 G 1
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E95815-PK
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Pin Description
Pin No. Symbol Description Pin No. Symbol Description
ILX524K
1 2 3 4 5 6 7 8
9 10 11
VOUT-R GND
φRS φLH
GND NC NC φ1 NC φROG-R GND
Signal out (red) GND Clock pulse input Clock pulse input GND NC NC Clock pulse input NC Clock pulse input GND
Recommended Supply Voltage
Item
VDD
Min.
11.4
Typ.
12.0
Max.
12.6
Unit
V
12 13 14 15 16 17 18 19 20 21 22
φROG-G φROG-B
NC φ2 VDD NC NC NC VDD VOUT-B VOUT-G
Clock pulse input Clock pulse input NC Clock pulse input 12V power supply NC NC NC 12V power supply Signal out (blue) Signal out (green)
Clock Characteristics
Item Input capacity of φ1, φ2 Input capacity of φLH Input capacity of φRS Input capacity of φROG
∗
It indicates that φROG-R, φROG-G, φROG-B as φROG.
∗
Symbol Cφ1, Cφ2 CφLH CφRS CφROG
Clock Frequency
Item Symbol
φ1, φ2, φLH, φRS fφ1, fφ2, fφLH, fφRS
Input Clock Pulse Voltage Condition
Item
φ1, φ2, φLH, φRS, φROG pulse voltage
High level Low level
Min.
— — — —
Min.
4.75 —
Min.
—
Typ.
400
10 10 10
Typ.
5.0 0
Typ.
1
Max.
— — — —
Max.
5.25
0.1
Max.
5
Unit
pF pF pF pF
Unit
MHz
Unit
V V
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ILX524K
Electrooptical Characteristics (Note 1) Ta = 25°C, VDD = 12V, fφRS = 1MHz, Input clock = 5Vp-p, Light source = 3200K, IR cut filter CM-500S (t = 1.0mm)
Item Symbol Min. Typ. Max. Unit Remarks
Red
Sensitivity
Green
Blue Sensitivity nonuniformity Saturation output voltage
Red Saturation exposure
Green
Blue Dark voltage average Dark signal nonuniformity Image lag Supply current Total transfer efficiency Output impedance Offset level Dynamic range
RR RG RB PRNU VSAT SER SEG SEB VDRK DSNU IL IVDD TTE ZO VOS DR
1.3
2.1
1.6 —
2
0.74
0.46
0.58 — — — —
92 — —
1000
2.0
3.2
2.5 4
3.2
1.6 1
1.28
0.3
1.5
0.02 26 98
250
6.5
10670
2.7
4.3
3.4 20 — — — —
2
5 — 50 — — — —
V/(lx · s)
%
V
lx · s
mV mV
%
mA
%
Ω
V
—
Note 2
Note 3 Note 4
Note 5
Note 6 Note 6 Note 7
— —
— Note 8 Note 9
Note
1) In accordance with the given electrooptical characteristics, the black level is defined as the average value of D2, D3 to D12.
2) For the sensitivity test light is applied with a uniform intensity of illumination.
3) PRNU is defined as indicated below. Ray incidence conditions are the same as for Note 2.
VOUT-G = 500mV (Typ.) PRNU = × 100 [%]
(VMAX – VMIN) /2
VAVE
Where the 2700 pixels are divided into blocks of 100. The maximum output of each block is set to VMAX, the minimum output to VMIN and the average output to VAVE.
4) Use below the minimum value of the saturation output voltage.
5) Saturation exposure is defined as follows.
SE =
VSAT
R
Where R indicates RR, RG, RB, and SE indicates SER, SEG, SEB.
6) Optical signal accumulated time τint stands at 10ms.
7) VOUT-G = 500mV (Typ.)
VOUT
8) Vos is defined as indicated bellow. VOUT indicates VOUT-R, VOUT-G, and VOUT-B.
9) Dynamic range is defined as follows.
DR =
VSAT VDRK
GND
VOS
When the optical signal accumulated time is shorter, the dynamic range gets wider because the optical signal accumulated time is in proportion to the dark voltage.
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ILX524K
2775
D75
D71 D70
D65 D64 S2700 S2699 S2698
S2 S1 D63 D62 D61
D15 D14
Optical black (49 pixels)
D13
1-line output period (2775 pixels)
Clock Timing Chart 1
5
0
φROG
4 3 2
1
5
0
5
0
5
0
D3 D2
D1
Dummy signal (63 pixels)
OUT indicates VOUT-R, VOUT-G, VOUT-B.
V
Note) The transfer pulses (φ1, φ2, φLH) must have more than 2775 cycles.
φ1
φLH
φ2
φRS
OUT
V
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Clock Timing Chart 2
φROG
ILX524K
t4 t5
t2
t7t6
φ1
φ2
Clock Timing Chart 3
φ1 φLH
φ2
t1 t3
t7
t9
t6
t10 t11
φRS
OUT
V
t8
t13
t12
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Clock Pulse Recommended Timing
ILX524K
Item
φROG, φ1 pulse timing φROG pulse high level period φROG, φ1 pulse timing φROG pulse rise time φROG pulse fall time φ1 pulse rise time /φ2 pulse fall time φ1 pulse fall time /φ2 pulse rise time φRS pulse high level period φRS, φLH pulse timing φRS pulse rise time φRS pulse fall time
Signal output delay time
∗
These timing is the recommended condition under fφRS = 1MHz.
Symbol
t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t11 t12 t13
Min.
50 800 800
0 0 0
0 45 45
0
0 — —
Typ.
100 1000 1000
5
5 20 20
250 250
10 10 10 10
Max.
— — — 10 10 60 60
∗ ∗
— — 30 30 — —
Unit
ns ns ns ns ns ns ns ns ns ns ns ns ns
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IC1
ILX524K
IC1: 74AC04
Tr1: 2SC2785
φROG
-G
12
φROG
-B
13
NC
1415
φ2 φROG-B φROG-G
φ2
2Ω
V
DD
16
NC
17
NC
18
OUT-B
V
NC
19
GND
11
φROG
-R
NC
φ1
10
9
8
IC1
2Ω100Ω 100Ω100Ω
NC
7
NC
6
GND
5
φLH
4
Tr1
5.1kΩ
5.1kΩ
∗
VOUT-G
Application Circuit
Tr1
20
21
DD
V
OUT-B
V
φRS
GND
Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for
3
φRS φLH φ1 φROG-R
any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
2
Tr1
V
OUT-G
22
V
100Ω 100Ω
OUT-R
1
5.1kΩ
OUT-R
V
12V
0.1µF 47µF/16V
Data rate fφRS = 1MHz.
∗
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Example of Representative Characteristics (VDD = 12V, Ta = 25°C)
Spectral sensitivity characteristics (Standard characteristics)
1
0.8
0.6
0.4
Relative sensitivity
0.2
0
450400 550500 650600 700
Wavelength [nm]
ILX524K
Dark signal output temperature characteristics
(Standard characteristics)
10
5
1
0.5
Output voltage rate
0.1 0
10 20 30 40 50 60 1
Ta – Ambient temperature [°C]
Offset level vs. VDD characteristics
(Standard characteristics)
12
Ta = 25°C
10
Integration time output voltage characteristics
(Standard characteristics)
1
0.5
Output voltage rate
0.1 510
τint – Integration time [ms]
Offset level vs. temperature characteristics
(Standard characteristics)
12
10
8
6
– Offset level [V]
4
OS
V
2
0
11.4 12.6
12
DD [V]
V
OS
∆V ∆VDD
0.3 – Offset level [V]
OS
V
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8
6
4
2
0
0102030405060
Ta – Ambient temperature [°C]
∆VOS
∆Ta
–0.5mV/°C
Page 9
Notes of Handling
1) Static charge prevention CCD image sensors are easily damaged by static discharge. Before handling be sure to take the following protective measures. a) Either handle bare handed or use non chargeable gloves, clothes or material.
Also use conductive shoes. b) When handling directly use an earth band. c) Install a conductive mat on the floor or working table to prevent the generation of static electricity. d) Ionized air is recommended for discharge when handling CCD image sensor. e) For the shipment of mounted substrates, use boxes treated for prevention of static charges.
2) Notes on Handling CCD Cer-DIP Packages The following points should be observed when handling and installing cer-DIP packages. a) Remain within the following limits when applying static load to the ceramic portion of the package:
(1)Compressive strength:39N/surface (Do not apply load more than 0.7mm inside the outer perimeter of
the glass portion.) (2)Shearing strength: 29N/surface (3)Tensile strength: 29N/surface (4)Torsional strength: 0.9Nm
ILX524K
b) In addition, if a load is applied to the entire surface by a hard component, bending stress may be
generated and the package may fracture, etc., depending on the flatness of the ceramic portion. Therefore, for installation, either use an elastic load, such as a spring plate, or an adhesive.
Upper ceramic layer
lower ceramic layer
39N
Low-melting glass
(1)
29N 29N 0.9Nm
(2) (3) (4)
c) Be aware that any of the following can cause the glass to crack: because the upper and lower ceramic
layers are shielded by low-melting glass, (1)Applying repetitive bending stress to the external leads. (2)Applying heat to the external leads for an extended period of time with soldering iron. (3)Rapid cooling or heating (4)Rapid cooling or impact to a limited portion of the low-melting glass with a small-tipped tool such as
tweezers. (5)Prying the upper or lower ceramic layers away at a support point of the low-melting glass.
Note that the preceding notes should also be observed when removing a component from a board after it has already been soldered.
3) Soldering a) Make sure the package temperature does not exceed 80°C. b) Solder dipping in a mounting furnace causes damage to the glass and other defects. Use a grounded 30W
soldering iron and solder each pin in less then 2 seconds. For repairs and remount, cool sufficiently.
c) To dismount an imaging device, do not use a solder suction equipment. When using an electric
desoldering tool, ground the controller. For the control system, use a zero cross type.
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ILX524K
4) Dust and dirt protection a) Operate in clean environments. b) Do not either touch glass plates by hand or have any object come in contact with glass surfaces. Should
dirt stick to a glass surface, blow it off with an air blower. (For dirt stuck through static electricity ionized air is recommended.)
c) Clean with a cotton bud and ethyl alcohol if the glass surface is grease stained. Be careful not to scratch
the glass.
d) Keep in a case to protect from dust and dirt. To prevent dew condensation, preheat or precool when
moving to a room with great temperature differences.
5) Exposure to high temperatures or humidity will affect the characteristics. Accordingly avoid storage or usage in such conditions.
6) CCD image sensors are precise optical equipment that should not be subject to mechanical shocks.
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Page 11
0° to 9°
ILX524K
0.25
12
22pin DIP (400mil)
32.0 ± 0.5
21.6 (8µm × 2700Pixels)
(AT STAND OFF)
10.16
10.0 ± 0.5
9.0
11
No.1 Pixel (Green)
30.6
1. The height from the bottom to the sensor surface is 1.61 ± 0.3mm.
2. The thickness of the cover glass is 0.8mm, and the refractive index is 1.5.
M
3.5 ± 0.5
0.3
2.7
0.51
Cer-DIP
42 ALLOY
TIN PLATING
3.0g
2.54
Package Outline Unit: mm
6.53 ± 0.8
22
H
V
1
5.0 ± 0.5
4.0 ± 0.5
PACKAGE MATERIAL
LEAD TREATMENT
PACKAGE STRUCTURE
PACKAGE WEIGHT
LEAD MATERIAL
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