Datasheet IL4216 Datasheet (Siemens)

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600 V 700 V 800 V

IL4216 IL4217 IL4218

TRIAC DRIVER OPTOCOUPLER

FEATURES

• High Input Sensitivity I

• 600/700/800 V Blocklng Voltage

• 300 mA On-State Current

• High Static dv/dt 10,000 V/ µ sec., typical

• Inverse Parallel SCRs Provide Commutating dv/dt >10 KV/ µ sec

• Very Low Leakage <10 µ A

• Isolation Test Voltage from Double Molded Package 5300 VAC

• Package, 6-Pln DIP

• Underwriters Lab File #E52744

DESCRIPTION

The IL421x consists of an AlGaAs IRLED optically coupled to a pair of photosensitive non-zero crossing SCR chips and are connected inversely parallel to form a TRIAC. These three semiconductors are assembled in a six pin 0.3 inch dual in-line package, using high insulation double molded, over/under leadframe construction.

High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than

1.3 mA (DC).

The IL421x uses two discrete SCRs resulting in a commutating dv/dt of greater than 10KV/ µ of a proprietary greater than 10KV/ µ FET that is enhanced when high dv/dt spikes occur between MT1 and MT2 of the TRIAC. The FET clamps the base of the phototransistor when conducting, disabling the internal SCR predriver.

The blocking voltage of up to 800 V permits control of off-line voltages up to 240 VAC, with a safety factor of more than two, and is sufﬁcient for as much as 380 V AC. Current handling capability is up to 300 mA RMS, continuous at 25 °

The IL421x isolates low-voltage logic from 120, 240, and 380 VAC lines to control resistive inductive, or capacitive loads including motors solenoids, high current thyristors or TRIAC and relays.

Applications include solid-state relays, industrial controls, ofﬁce equipment, and consumer appliances.

dv/dt clamp results in a static dv/dt of

s. This clamp circuit has a MOS-

RMS

=1.3 mA

s. The use

Dimensions in inches (mm)

Pin One ID.

248 (6.30) 256 (6.50)

.335 (8.50) .343 (8.70)

.039

(1.00)

min.

4°

typ.

.018 (0.45) .022 (0.55)

Maximum Ratings Emitter

Reverse Voltage...................................................................................6 V

Forward Current ..............................................................................60 mA

Surge Current....................................................................................2.5 A

Power Dissipation.........................................................................100 mW

Derate Linearly from 25 °

Thermal Resistance....................................................................750 °

Detector

Peak Off-State Voltage

IL4216...........................................................................................600 V

IL4217...........................................................................................700 V

IL4218...........................................................................................800 V

RMS On-State Current...................................................................300 mA

Single Cycle Surge...............................................................................3 A

Total Power Dissipation................................................................500 mW

Derate Linearly from 25 °

Thermal Resistance.....................................................................150 °

Package

Isolation Test Voltage...........................................................5300 VAC

Storage Temperature......................................................–55 ° C to +150 ° C

Operating Temperature..................................................–55 °

Lead Soldering Temperature................................................260 °

Isolation Resistance

=500 V, T

.130 (3.30) .150 (3.81)

.020 (.051) min.

.031 (0.80) .035 (0.90)

.100 (2.54) typ.

C......................................................1.33 mW/ ° C

C........................................................6.6 mW/ ° C

=25 ° C ................................................................. ≥ 10

=100 ° C ............................................................... ≥ 10

LED

Anode

LED

Cathode

.300 (7.62)

18° typ.

.010 (.25) .014 (.35)

.300 (7.62) .347 (8.82)

typ.

.110 (2.7 .150 (3.8

C to +100 ° C

Triac Anode 2

Substra do not connec

Triac Anode

C/W

RMS

C/5 sec.

Ω

5–1

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Characteristics

=25 ° C)

Parameter Symbol Min. Typ. Max. Unit Condition Emitter

Forward Voltage V Breakdown Voltage V Reverse Current I Capacitance C Thermal Resistance, Junction to Lead R

F BR

THJL

630 VI

1.3 1.5 V I

0.1 10

µ AV

40 pF V 750

C/W

=20 mA

=10 mA

=6 V

=o V, f=1 MHz

Output Detector

Repetitive Peak Off-State Voltage IL4216 IL4217 IL4218

V V V

DRM DRM DRM

600 700 800

650 750 850

V V V

DRM

=100 µ A =100 µ A =100 µ A

Off-State Voltage IL4216 IL4217 IL4218

Off-State Current I Reverse Current I On-State Voltage V On-State Current I Surge (Non-Repetitive) On-State Current I Holding Current I Latching Current I LED Trigger Current I Turn-On Time t Turn-Off Time t Critical State of Rise: Off-State Voltage dv

Commutating Voltage dv

Off-State Current di/dt 100 A/ms I Thermal Resistance, Junction to Lead R

D(RMS)

D(RMS) D(RMS) R(RMS)

TM TM TSM H L FT ON OFF

(MT)

(COM)

THJL

424 484 565

460 536 613

10 100 10 100

1.7 3 V I

65 200 5mAV

0.7 1.3 mA V 35 50

/dt 10,000 2000 V /µ s

/dt 10,000

2000

150

V V V

µ AV µ AV

D(RMS)

=600 V, T

=300 mA

300 mA PF=1.0, V 3 A f=50 Hz

µ AV

µ sV

=3 V

=2.2 V

=5 V

µ s PF=1.0, I

, V

V /µ V /µ s

V /µ s

C/W

, V

=300 mA

Package

Critical Rate of Rise of Coupled Input-Output Voltage dv

/dt 5000 V/µsIT=0 A, VRM=VDM=300 VAC

(IO)

Common Mode Coupling Capacitor

Package Capacitance C

CM IO

0.01 pF

0.8 pF f=1 MHz, VIO=0 V

=70 µ A =70 µ A =70 µ A

A A

T(RMS)

=424 VAC

=300 mA

=400 VAC, T

=100 =100

C C

=1.7 V

=25

Figure 1. LED forward current vs. forward voltage

Figure 2. Forward voltage versus forward current

IL4216/4217/4218

5–2

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Figure 3. Peak LED current vs. duty factor, Tau

Figure 4. Maximum LED power dissipation

Power Factor Considerations

A snubber isn’t needed to eliminate false operation of the TRIAC driver because of the IL411’s high static and commutating dv/dt with loads between 1 and 0.8 power factors. When inductive loads with power factors less than 0.8 are being driven, include a RC snubber or a single capacitor directly across the device to damp the peak commutating dv/dt spike. Normally a commutating dv/dt causes a turning-off device to stay on due to the stored energy remaining in the turning-off device.

But in the case of a zero voltage crossing optotriac, the commutating dv/dt spikes can inhibit one half of the TRIAC from turning on. If the spike potential exceeds the inhibit voltage of the zero cross detection circuit, half of the TRIAC will be heldoff and not turn-on. This hold-off condition can be eliminated by using a snubber or capacitor placed directly across the optotriac as shown in Figure 7. Note that the value of the capacitor increases as a function of the load current.

The hold-off condition also can be eliminated by providing a higher level of LED drive current. The higher LED drive provides a larger photocurrent which causer. the phototransistor to turn-on before the commutating spike has activated the zero cross network. Figure 8 shows the relationship of the LED drive for power factors of less than 1.0. The curve shows that if a device requires 1.5 mA for a resistive load, then 1.8 times (2.7 mA) that amount would be required to control an inductive load whose power factor is less than 0.3.

Figure 5. On-state terminal voltage vs. terminal current

Figure 6. Maximum output power dissipation

Figure 7. Shunt capacitance versus load current versus power factor

Figure 8. Normalized LED trigger current versus power factor

5–3

IL4216/4217/4218