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IL2
Datasheet (ISOCOM)
3 pgs72.65 Kb0
Datasheet (Siemens)
5 pgs83.32 Kb0

Datasheet IL5, IL2 Datasheet (Siemens)

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Page 1
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.2 .2
IL1/2/5
PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• Current Transfer Ratio at I
F
IL1, 20% Min. IL2, 100% Min. IL5, 50% Min.
• High Collector-Emitter Voltage IL1 – BV IL2, IL5 – BV
CEO
=50 V
CEO
=70 V
• Field-Effect Stable by TRansparent IOn Shield (TRIOS)
• Double Molded Package Offers Isolation Test Voltage 5300 VAC
RMS
• Underwriters Lab File #E52744
V
DE
• VDE Approval #0884 (Available with Option 1)
DESCRIPTION
The IL1/2/5 are optically coupled isolated pairs employ­ing GaAs infrared LEDs and silicon NPN phototransistor . Signal information, including a DC level, can be trans­mitted by the drive while maintaining a high degree of electrical isolation between input and output. The IL1/2/5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. These couplers can be used also to replace relays and transformers in many digital inter­face applications such as CRT modulation.
See Appnote 45, “How to Use Optocoupler Normalized Curves.”
Dimensions in inches (mm)
Pin One ID
3
48 (6.30) 56 (6.50)
4
.335 (8.50) .343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45) .022 (0.55)
12
5
6
.130 (3.30) .150 (3.81)
.020 (.051) min.
.031 (0.80) .035 (0.90)
.100 (2.54) typ.
Anode
Cathode
NC
1
2
3
.300 (7.62)
18° typ.
.010 (.25) .014 (.35)
.300 (7.62) .347 (8.82)
typ.
6
Base
5
Collector
4
Emitter
.110 (2.79 .150 (3.81
Maximum Ratings Emitter
Reverse Voltage.................................................................................. 6 V
Forward Current ............................................................................. 60 mA
Surge Current .................................................................................. 2.5 A
Power Dissipation........................................................................100 mW
Derate Linearly from 25
°
C .................................................... 1.33 mW/°C
Detector
Collector-Emitter Reverse Voltage
IL1................................................................................................... 50 V
IL2, IL5............................................................................................. 70 V
Emitter-Base Reverse Voltage.............................................................7 V
Collector-Base Reverse Voltage........................................................ 70 V
Collector Current ............................................................................50 mA
Collector Current (t<1 ms)............................................................400 mA
Power Dissipation........................................................................ 200 mW
Derate Linearly from 25
°
C ...................................................... 2.6 mW/°C
Package
Package Power Dissipation........................................................ 250 mW
Derate Linearly from 25
°
C ...................................................... 3.3 mW/°C
Isolation Test V oltage (between emitter and detector referred to standard climate 23
°
C/50%RH, DIN 50014)5300 VA C
RMS
Creepage..................................................................................min. 7 mm
Clearance .................................................................................min. 7 mm
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1.........................................................175
Isolation Resistance
V
=500 V, TA=25°C
IO
VIO=500 V, TA=100°C
.........................................................................≥
.......................................................................≥
1012 1011
Ω Ω
Storage Temperature .................................................... –40°C to +150°C
Operating Temperature................................................. –40
Junction Temperature..................................................................... 100
Soldering Temperature (2 mm from case bottom).......................... 260
°
C to +100°C
°
C
°
C
5–1
This document was created with FrameMaker 4.0.4
Page 2
Characteristics
Symbol Min Typ Max Unit Condition
Emitter
Forward Voltage V Breakdown Voltage V Reverse Current I Capacitance C Thermal Resistance Junction to Lead R
F
BR
R
O
THJL
630 VI
Detector Capacitance C
Collector-Emitter Leakage Current I Collector-Emitter Saturation Voltage V Base-Emitter Voltage V
C C
CEO
CESAT
BE
CE CB EB
DC Forward Current Gain HFE 200 650 1800 VCE=10 V, IB=20 µA Saturated DC Forward Current Gain HFE Thermal Resistance Junction to Lead R
THJL
SAT
120 400 600 VCE=0.4 V, IB=20 µA
Package T ransfer Characteristics IL1
Saturated Current Transfer Ratio (Collector-Emitter) CTR
CESAT
Current Transfer Ratio (Collector-Emitter) CTR
CE
20 80 300 % IF=10 mA, VCE=10 V
Current Transfer Ratio (Collector-Base) CTR
CB
IL2
Saturated Current Transfer Ratio (Collector-Emitter) CTR
CESAT
Current Transfer Ratio (Collector-Emitter) CTR
Current Transfer Ratio CTR
CE
CB
100 200 500 % IF=10 mA, VCE=10 V
IL5
Saturated Current Transfer Ratio (Collector-Emitter) CTR
CESAT
Current Transfer Ratio (Collector-Emitter) CTR
Current Transfer Ratio CTR
CE
CB
50 130 400 % IF=10 mA, VCE=10 V
Isolation and Insulation
Common Mode Rejection Output High CMH 5000 V/µsVCM=50 V Common Mode Rejection Output Low CML 5000 V/µsVCM=50 V
Common Mode Coupling Capacitance C Package Capacitance C Insulation Resistance R
CM
I-O
S
1.25 1.65 V IF=60 mA =10 µA
R
0.01 10
µ
AV
=6 V
R
40 pF VR=0 V, f=1 MHz 750
6.8
8.5
11 550nAV
°
C/W
pF pF pF
VCE=5 V, f=1 MHz VCB=5 V, f=1 MHz VEB=5 V, f=1 MHz
=10 V
CE
0.25 ICE=1 mA, IB=20 µA
0.65 V VCE=10 V, IB=20 µA
500
°
C/W
75 % IF=10 mA, VCE=0.4 V
0.25 % IF=10 mA, VCB=9.3 V
170 % IF=10 mA, VCE=0.4 V
0.25 % IF=10 mA, VCB=9.3 V
100 % IF=10 mA, VCE=0.4 V
0.25 % IF=10 mA, VCB=9.3 V
, RL=1 kΩ, IF=0 mA
P-P
, RL=1 kΩ, IF=10
mA
P-P
0.01 pF
0.6 pF V
10
+14
Ω
=0 V, f=1 MHz
I-O
V
=500 V
I-O
5–2
IL1/2/5
Page 3
SWITCHING TIMES
I
O
I
V
I
V
Figure 1. Non-saturated switching timing
VCC=5 V
=10 mA
F
V
F=10 KHz DF=50%
O
RL=75 Ω
Figure 2. Saturated switching timing
VCC=5 V
F=10 KHz DF=50%
=10 mA
F
R
L
V
Figure 3. Non-saturated switching timing
F
t
t
0
PLH
t
D
t
R
PHL
t
S
Figure 4. Saturated switching timing
I
F
t
D
t
O
R
t
PLH
t
F
50%
VTH=1.5 V
t
PHL
t
t
S
F
Non-Saturated Switching Time T able-Typical
Characteristic Sym IL1
I
F
Delay T Rise Time t Storage t Fall Time t Propagation H-L t Propagation L-H t
D
R
S
F
PHL
PLH
0.8 1.7 1.7 µs
1.9 2.6 2.6 µsV
0.2 0.4 0.4 µsR
1.4 2.2 2.2 µs
0.7 1.2 1.1 µst
1.4 2.3 2.5 µs
=20 mA
IL2
IF=5 mA
IL5
IF=10 mA
Unit Test Condition
=5 V
CC
=75 Ω
L
measured at 50% of output
p
Saturated Switching Time T able-Typical
Characteristic Sym IL1
IF=20 mA
Delay T Rise Time t Storage t Fall Time t Propagation H-L t Propagation L-H t
D
R
S
F
PHL
PLH
0.8 1 1.7 µs
1.2 2 7 µsV
7.4 5.4 4.6 µsV
7.6 13.5 20 µsR
1.6 5.4 2.6 µsV
8.6 7.4 7.2 µs
IL2
IF=5 mA
IL5
IF=10 mA
Unit Test Condition
=5.0 V
CL
=0.4
CE
=1 K
L
=1.5 V
TH
5–3
IL1/2/5
Page 4
Figure 5. Forward voltage versus forward current
g
C
C
C
:
V
0
:
C
V
C
V
:
0
0
:
C
C
V
0
5
C
C
2
V
V
1.4
1.3
Ta = -55°
1.2
1.1
Ta = 25°
1.0
0.9
Ta = 100°
0.8
VF - Forward Voltage - V
0.7
100101.1
IF - Forward Current - mA
Figure 9. Normalized non-saturated and saturated CTR at T
=100°C versus LED current
A
1.5 Normalized to
Vce = 10V, IF = 10mA, Ta = 25°
CTRce(sat) Vce = 0.4
1.
0.5
Ta = 100°
NCTR - Normalized CTR
0.
NCTR(SAT) NCTR
100101.1
IF - LED Current - mA
Figure 6. Normalized non-saturated and saturated CTR at
=25°C versus LED current
T
A
1.5 Normalized to
Vce = 10V, IF = 10mA Ta = 25°C
1.0
CTRce(sat) Vce = 0.4
0.5
NCTR(SAT)
NCTR - Normalized CTR
0.0
NCTR
100101.1
IF - LED Current - mA
Figure 7. Normalized non-saturated and saturated CTR at TA=50°C versus LED current
1.5
Normalized to
Vce = 10V, IF = 10mA, Ta = 25°
CTRce(sat) Vce = 0.4
1.0 Ta = 50°C
0.5
NCTR(SAT)
NCTR - Normalized CTR
NCTR
0.0
1.1
1001
IF - LED Current - mA
Figure 10. Collector-emitter current versus temperature and LED current
35 30
25 20
15 10
Ice - Collector Current - mA
50°
25°C
100°C
IF - LED Current - mA
70°
6050403020100
Figure 11. Collector-emitter leakage current ver sus temper­ature
5
10
4
10
3
10
2
10
1
10
0
10
-1
10
Iceo - Collector-Emitter - nA
-
10
WORST
CASE
TYPICAL
Ta - Ambient Tem
Vce = 10
100806040200-20
erature - °C
Figure 8. Normalized non-saturated and saturated CTR at
=70°C versus LED current
T
A
1.5 Normalized to
Vce = 10V, IF = 10mA Ta = 25°C
1.0
NCTR - Normalized CTR
CTRce(sat) Vce = 0.4
0.5
0.0
IF - LED Current - mA
Ta = 70°
NCTR(SAT) NCTR
100101.1
Figure 12. Normalized CTRcb versus LED current and tem­perature
5–4
1.5
1.0
0.5
0.0
NCTRcb - Normalized CTRcb
Normalized to:
IF =10 mA Vcb = 9.3 Ta = 25°C
25°C 50°C
70°C
.1 1 10 100
IF - LED Current - mA
IL1/2/5
Page 5
Figure 13. Collector base photocurrent versus LED current
0
1
C
C
C
C
C
C
C
C
:
V
C
V
100
Ta = 25°C
100
Icb = 1.0357 *IF ^1.363
10
1
.1
Photocurrent - µA
Icb - Collector Base
.01
101.1
100
IF - LED Current - mA
Figure 14. Normalized photocurrent versus If and tempera­ture
10
Normalized to:
If = 10ma, Ta = 25¡C
1
Figure 16. Normalized saturated HFE versus base current and temperature
1.5 Normalized to
70°
50°
1.0
25°
-20°
0.5
Saturated HFE
Vce = 0.4
NHFE(sat) - Normalized
0.0
Vce = 10
Ib = 20µA
Ta = 25°
1 10 100 1000
Ib - Base Current - (µA)
Figure 17. Propagation delay versus collector load resistor
1000
100
Ta = 25°C, IF = 10mA Vcc = 5 V, Vth = 1.5 V
tpHL
2.5
2.0
.1
Normalized Photocurrent
.01
If -LED Current- mA
NIB-Ta=-20¡C NIb,Ta=25¡C NIb,Ta=50¡C NIb,Ta=70¡C
100101.1
T able 15. Normalized non-saturated HFE ver sus base current and temperature
1.2
1.0
70°
25°
50°
Normalized to:
Ib = 20µA Vce = 10 V Ta = 25°C
0.8
-20°
0.6
NHFE - Normalized HFE
0.4 1 10 100 1000
Ib - Base Current - µA
10
1.5
tpLH
tp – Propagatio Delay - µs
1
100101.1
1.0
tpHL - Propagation Delay - µs
RL - Collector Load Resistor - KΩ
5–5
IL1/2/5
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