Datasheet IKW08T120FKSA1 Specification

IKW08T120

TrenchStop®Series

Low Loss DuoPack : IGBT in TrenchStop®and Fieldstop technology with soft,

fast recovery anti-parallel Emitter Controlled HE diode

 Approx. 1.0Vreduced V

and 0.5V reduced VFcompared to BUP305D

 Short circuit withstand time – 10s
 Designed for :

- Frequency Converters

- Uninterrupted Power Supply

 TrenchStop®and Fieldstop technology for 1200 V applications

offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

 NPT technology offers easy parallel switching capability due to

positive temperature coefficient in V

 Low EMI
 Low Gate Charge
 Very soft, fast recovery anti-parallel Emitter Controlled HE diode
 Qualified according to JEDEC1for target applications
 Pb-free lead plating; RoHS compliant
 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

CE(sat)

G

PG-TO-247-3

CE(sat)

C

E

Type V

CE

IKW08T120 1200V 8A 1.7V

I

V

C

CE(sat),Tj=25°CTj,max

150C

Marking Code Package

K08T120 PG-TO-247-3

Maximum Ratings
Parameter Symbol Value Unit

Collector-emitter voltage
DC collector current

TC= 25C
TC= 100C

Pulsed collector current, tplimited by T
Turn off safe operating area

jmax

V

CE

I

C

I

Cpul s

-

1200 V

A

16

8

24

24
VCE 1200V, Tj 150C
Diode forward current

TC= 25C
TC= 100C

Diode pulsed current, tplimited by T
Gate-emitter voltage
Short circuit withstand time

2)

jmax

I

F

I

Fpul s

V

GE

t

SC

16

8

24

20

10

V

s
VGE= 15V, VCC 1200V, Tj 150C
Power dissipation

P

tot

70 W

TC= 25C

Operating junction temperature
Storage temperature

T

j

T

stg

-40...+150

-55...+150

C

1

J-STD-020 and JESD-022

2)

Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS

1 Rev. 2.4 12.06.2013

IKW08T120

TrenchStop®Series

Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

IFAG IPC TD VLS

2 Rev. 2.4 12.06.2013

IKW08T120

TrenchStop®Series

Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic

IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient

Electrical Characteristic, at Tj= 25 C, unless otherwise specified

Parameter Symbol Conditions

Static Characteristic

Collector-emitter breakdown voltage
Collector-emitter saturation voltage

Diode forward voltage

Gate-emitter threshold voltage
Zero gate voltage collector current

Gate-emitter leakage current
Transconductance
Integrated gate resistor

R

thJ C

R

thJ CD

R

thJ A

V

(BR )CESVGE

V

CE( sat)

V

F

V

GE( th)

I

CES

I

GES

g

fs

R

Gin t

=0V, IC=0.5mA
VGE= 15V, IC=8A
Tj=25C
Tj=125C
Tj=150C
VGE=0V, IF=8A
Tj=25C
Tj=125C
Tj=150C
IC=0.3mA,VCE=V
VCE=1200V,

VGE=0V
Tj=25C
Tj=150C

VCE=0V,VGE=20V
VCE=20V, IC=8A

1.7 K/W

2.3

40

Value

min. typ. max.

1200 - - V

GE

-

-

-

-

-

-

5.0 5.8 6.5

-

-

1.7

2.0

2.2

1.7

1.7

1.7

-

-

- - 100 nA

- 5 - S

none Ω

Unit

2.2

-

-

2.2

-

-

mA

0.2

2.0

IFAG IPC TD VLS

3 Rev. 2.4 12.06.2013

TrenchStop®Series

Dynamic Characteristic

Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge

Internal emitter inductance

C
C
C
Q

L

iss
oss
rss

Gat e

E

measured 5mm (0.197 in.) from case
Short circuit collector current

1)

I

C(S C)

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter Symbol Conditions

IGBT Characteristic

Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy

t

d(o n)

t

r

t

d(o ff)

t

f

E

on

E

off

E

ts

Anti-Parallel Diode Characteristic

Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse

recovery current during t

b

t

rr

Q

rr

I

rrm

dirr/dt

VCE=25V,
VGE=0V,
f=1MHz

VCC=960V, IC=8A
VGE=15V

VGE=15V,tSC 10s
VCC= 600V,
Tj= 25 C

Tj=25C,
VCC=600V,IC=8A,
VGE=0/15V,
RG=81,

2)

L

=180nH,



2)

C

=39pF



Energy losses include
“tail” and diode
reverse recovery.

Tj=25C,
VR=600V, IF=8A,
diF/dt=600A/ s

IKW08T120

- 600 - pF

- 36 -

- 28 -

- 53 - nC

- 13 - nH

- 48 - A

Value

min. typ. max.

- 40 - ns

- 23 -

- 450 -

- 70 -

- 0.67 - mJ

- 0.7 -

- 1.37 -

- 80 - ns

- 1.0 - µC

- 13 - A

- 420 -

Unit

A/s

1)

Allowed number of short circuits: <1000; time between short circuits: >1s.

2)

Leakage inductance Land Stray capacity Cdue to dynamic test circuit in Figure E.

IFAG IPC TD VLS

4 Rev. 2.4 12.06.2013

TrenchStop®Series

Switching Characteristic, Inductive Load, at Tj=150 C

Parameter Symbol Conditions

IGBT Characteristic

Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse

recovery current during t

b

t

d(o n)

t

r

t

d(o ff)

t

f

E

on

E

off

E

ts

t

rr

Q

rr

I

rrm

dirr/dt

Tj=150C,
VCC=600V, IC=8A,
VGE=0/15V,
RG= 81,

1)

L

=180nH,



1)

C

=39pF



Energy losses include
“tail” and diode
reverse recovery.

Tj=150C
VR=600V, IF=8A,
diF/dt=600A/ s

IKW08T120

Value

min. typ. max.

- 40 - ns

- 26 -

- 570 -

- 140 -

- 1.08 - mJ

- 1.2 -

- 2.28 -

- 200 - ns

- 2.3 - µC

- 20 - A

- 320 -

Unit

A/s

1)

Leakage inductance Land Stray capacity Cdue to dynamic test circuit in Figure E.

IFAG IPC TD VLS

5 Rev. 2.4 12.06.2013

TC=80°C

Figure 1.

Collector current as a function of

Figure 2.

Safe operating area

Figure 3.

Power dissipation as a function of

Figure 4.

Collector current as a function of

I

c

I

c

IKW08T120

TrenchStop®Series

tp=2µs

10A

10µs

TC=110°C

, COLLECTOR CURRENT

C

I

5A

0A

10Hz 100Hz 1kHz 10kHz 100kHz

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

switching frequency

(Tj 150C, D = 0.5, VCE= 600V,
VGE= 0/+15V, RG= 81)

, COLLECTOR CURRENT

C

I

1A

0,1A

0,01A

1V 10V 100V 1000V

(D = 0, TC= 25C,
Tj150C;VGE=15V)

15A

50µs

150µs
500µs

20ms
DC

, POWER DISSIPATION

tot

P

0W

25°C 50°C 75°C 100°C 125°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

case temperature

(Tj 150C)

IFAG IPC TD VLS

10A

5A

, COLLECTOR CURRENT

C

I

0A

25°C 75°C 125°C

case temperature

(VGE 15V, Tj 150C)

6 Rev. 2.4 12.06.2013

VGE=17V

Figure 5.

Typical output characteristic

Figure 6.

Typical output characteristic

Figure 7.

Typical transfer characteristic

Figure 8.

Typical collector

-

emitter

IKW08T120

TrenchStop®Series

20A

VGE=17V

15V

13V
11V

9V
7V

, COLLECTOR CURRENT

C

I

5A

0A

0V 1V 2V 3V 4V 5V 6V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

(Tj= 25°C)

15V

15A

10A

, COLLECTOR CURRENT

C

I

5A

0A

13V
11V

9V

7V

0V 1V 2V 3V 4V 5V 6V

(Tj= 150°C)

, COLLECTOR CURRENT

C

I

5A

0A

0V 2V 4V 6V 8V 10V 12V

TJ=150°C

25°C

V

, GATE-EMITTERVOLTAGE T

GE

(VCE=20V)

3,0V

2,5V

2,0V

1,5V

1,0V

COLLECTOR-EMITT SATURATION VOLTAGE

0,5V

CE(sat),

V

0,0V

-50°C 0°C 50°C 100°C

, JUNCTION TEMPERATURE

J

saturation voltage as a function of
junction temperature

(VGE= 15V)

IC=15A

IC=8A

IC=5A

IC=2.5A

IFAG IPC TD VLS

7 Rev. 2.4 12.06.2013

t











Figure 9.

Typical switching times as a

Figure 10.

Typical switching times as a

Figure 11.

Typical switching times as a

Figure 12.

Gate

-

emitter threshold voltage as

t

d(off)

f

TrenchStop®Series

t

d(off)

t

f

100 ns

IKW08T120

t

d(on)

10ns

t, SWITCHING TIMES

1ns

t

r

5A 10A 15A

t, SWITCHING TIMES

10 ns

1 ns

t

d(on)

t

r

IC, COLLECTOR CURRENT RG, GATE RESISTOR

function of collector current

(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, R

Dynamic test circuit in Figure E)

t

d(off)

=81Ω,

G

7V

6V

function of gate resistor

(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=8A,

Dynamic test circuit in Figure E)

t

f

t

t, SWITCHING TIMES

d(on)

t

r

10ns

0°C 50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

function of junction temperature

(inductive load, VCE=600V,
VGE=0/15V, IC=8A, R
Dynamic test circuit in Figure E)

IFAG IPC TD VLS

=81Ω,

G

5V

4V

3V

2V

GATE-EMITT TRSHOLD VOLTAGE

GE(th),

1V

V

0V

-50°C 0°C 50°C 100°C 150°C

max.

typ.
min.

a function of junction temperature

(IC= 0.3mA)

8 Rev. 2.4 12.06.2013

TrenchStop®Series

Figure 13.

Typical switching energy losses

Figure 14. Typical switching energy losses

Figure 15.

Typical switching energy losses

Figure 16.

Typical switching energy losses

IKW08T120

*) Eonand Etsincludelosses

dueto diode recovery

E, SWITCHING ENERGY LOSSES

5A 10A 15A

Ets*

Eon*

E

off

E, SWITCHING ENERGY LOSSES

3,2 mJ

2,8 mJ

2,4 mJ

2,0 mJ

1,6 mJ

1,2 mJ

0,8 mJ

0,4 mJ

0,0 mJ

*) Eonand Etsinclude losses

dueto diode recovery

    

Ets*

E

Eon*

off

IC, COLLECTOR CURRENT RG, GATE RESISTOR

as a function of collector current

(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, R

=81Ω,

G

Dynamic test circuit in Figure E)

as a function of gate resistor

(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=8A,

Dynamic test circuit in Figure E)

*) Eonand Etsinclude losses

due to diode recovery

E, SWITCHING ENERGY LOSSES

25°C 50°C 75°C 100°C 125°C

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE

as a function of junction
temperature

(inductive load, VCE=600V,
VGE=0/15V, IC=8A, R
Dynamic test circuit in Figure E)

=81Ω,

G

Ets*

E

Eon*

*) Eonand Etsincludelosses

dueto diode recovery

3mJ

off

2mJ

1mJ

Ets*

E

off

E, SWITCHING ENERGY LOSSES

Eon*

0mJ

400V 500V 600V 700V 800V

as a function of collector emitter
voltage

(inductive load, TJ=150°C,
VGE=0/15V, IC=8A, R

=81Ω,

G

Dynamic test circuit in Figure E)

IFAG IPC TD VLS

9 Rev. 2.4 12.06.2013

TrenchStop®Series

Figure 17.

Typical gate charge

Figure 18.

Typical capacitance as a function

Figure 19.

Short circuit withstand time as a

Figure 20.

Typical short circuit collector

IKW08T120

240V

, GATE-EMITTER VOLTAGE

5V

GE

V

0V

0nC 25nC 50nC

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

(IC=8 A)

960V

c, CAPACITANCE

1nF

100pF

10pF

0V 10V 20V

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

C

iss

C

oss

C

rss

5µs

, SHORT CIRCUIT WITHSTAND TIME

SC

t

0µs

12V 14V 16V

VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITTETR VOLTAGE

function of gate-emitter voltage

(VCE=600V, start at TJ=25°C)

75A

50A

25A

, short circuit COLLECTOR CURRENT

C(sc)

I

0A

12V 14V 16V 18V

current as a function of gate­emitter voltage

(VCE 600V, Tj 150C)

IFAG IPC TD VLS

10 Rev. 2.4 12.06.2013

IKW08T120

1us

Figure 21.

Typical turn on behavior

Figure 22.

Typical turn off behavior

Figure 23.

IGBT transient thermal resistance

Figure 24.

Diode transient thermal







-

1

-

2

-

3

0.350

2.71*10

-

4

C1=



1

/

R

1

C2=



2

/

R

2







-

2

-

3

-

3

0.344

1.55*10

-

4

C1=



1

/

R

1

C2=



2

/

R

2

TrenchStop®Series

V

CE

30A

600V

, COLLECTOR-EMITTER VOLTAGE

CE

V

100K/W

, TRANSIENT THERMAL RESISTANCE

thJC

Z

0V

-1

0us

K/W

I

C

0.5us

t, TIME t, TIME

(VGE=0/15V, RG=81Ω, Tj= 150C,
Dynamic test circuit in Figure E)

D=0.5

0.2

0.1

0.05

0.02

0.01
single pulse

R,( K/W )

0.187 1.73*10

0.575 2.75*10

0.589 2.57*10

R

1

1.5us

, (s)

20A

10A

0A

I

C

, COLLECTOR CURRENT

C

I

V

CE

0A

0us

1.5us1us0.5us

400V

200V

0V

(VGE=15/0V, RG=81Ω, Tj= 150C,
Dynamic test circuit in Figure E)

D=0.5

100K/W

0.2

0.1

0.05

R

2

10-1K/W

0.02

0.01

R,( K/W )

0.552 7.23*10

0.732 8.13*10

0.671 1.09*10

R

1

, (s)

R

2

single pulse

, TRANSIENT THERMAL RESISTANCE

thJC

Z

-2

K/W

10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH tP, PULSE WIDTH

(D = tp/ T)

IFAG IPC TD VLS

10-2K/W

10µs 100µs 1ms 10ms 100ms

impedance as a function of pulse
width

(D=tP/T)

11 Rev. 2.4 12.06.2013

500ns

Figure 23.

Typical reverse recovery time as

Figure 24.

Typical reverse recovery charge

di

/dt

,

OF R

EVERSE RECOVERY CURR

ENT

Figure 25.

Typical reverse recovery current

Figure 26.

Typical diode peak rate of fall of

IKW08T120

TrenchStop®Series

400ns

300ns

200ns

, REVERSE RECOVERY TIME

rr

t

100ns

TJ=150°C

2µC

1µC

, REVERSE RECOVERY CHARGE

rr

Q

TJ=150°C

TJ=25°C

TJ=25°C

0ns

200A/µs 400A/µs 600A/µs 800A/µs

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

a function of diode current slope

(VR=600V, IF=8A,
Dynamic test circuit in Figure E)

0µC

200A/µs 400A/µs 600A/µs 800A/µs

as a function of diode current
slope

(VR=600V, IF=8A,
Dynamic test circuit in Figure E)

, REVERSE RECOVERY CURRENT

5A

rr

I

0A

200A/µs 400A/µs 600A/µs 800A/µs

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

as a function of diode current
slope

(VR=600V, IF=8A,
Dynamic test circuit in Figure E)

TJ=150°C

TJ=25°C

DIODE PEAK RATE OF FALL

rr

-600A/µs

-500A/µs

-400A/µs

-300A/µs

-200A/µs

-100A/µs

-0A/µs

TJ=25°C

TJ=150°C

200A/µs 400A/µs 600A/µs 800A/µs

reverse recovery current as a
function of diode current slope

(VR=600V, IF=8A,
Dynamic test circuit in Figure E)

IFAG IPC TD VLS

12 Rev. 2.4 12.06.2013

TJ=25°C

Figure 27.

Typical diode forward current as

Figure 28.

Typical diode forward voltage as a

IKW08T120

TrenchStop®Series

, FORWARD CURRENT

F

I

0A

0V 1V 2V

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE

a function of forward voltage

150°C

2,0V

IF=15A

1,5V

1,0V

, FORWARD VOLTAGE

F

V

0,5V

0,0V

8A
5A

2,5A

-50°C 0°C 50°C 100°C

function of junction temperature

IFAG IPC TD VLS

13 Rev. 2.4 12.06.2013

TrenchStop®Series

IKW08T120

IFAG IPC TD VLS

14 Rev. 2.4 12.06.2013

TrenchStop®Series

I

rrm

90%

10%

di /dt

i,v

di /dt

12n

T(t

)

j1



22n

n



T

C

Figure A. Definition of switching t

imes

IKW08T120

t =t t

+

F

I

F

r r S F

Q =Q Q

r r S F

t

r r

t

S

+

t

F

Q

S

Figure C. Definition of diodes
switching characteristics

r r

1

p(t)

r

Figure D. Thermal equivalent
circuit

t

Q

F

I

r r m

V

r r

I

r r m

R

r

rr

Figure B. Definition of switching losses

IFAG IPC TD VLS

Figure E. Dynamic test circuit

Leakage inductance L=180nH
and Stray capacity C=39pF.

15 Rev. 2.4 12.06.2013

IKW08T120

TrenchStop®Series

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.

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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

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Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
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failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
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to assume that the health of the user or other persons may be endangered.

IFAG IPC TD VLS

16 Rev. 2.4 12.06.2013