Page 1
IKP20N60T
TrenchStop
®
Series IKW20N60T
Low Loss DuoPack : IGBT in TrenchStop
®
and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Very low V
1.5 V (typ.)
CE(sat)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• TrenchStop
®
and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low V
• Positive temperature coefficient in V
CE(sat)
CE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC
1
for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V
IC V
CE
CE(sat),Tj=25°C
T
Marking Package
j,max
PG-TO-220-3-1
C
G
E
PG-TO-247-3-21
IKP20N60T 600V 20A 1.5V
IKW20N60T 600V 20A 1.5V
175°C
175°C
K20T60 PG-TO-220-3-1
K20T60 PG-TO-247-3-21
Maximum Ratings
Parameter Symbol Value Unit
V
Collector-emitter voltage
DC collector current, limited by T
= 25°C
T
C
T
= 100°C
C
Pulsed collector current, tp limited by T
Turn off safe operating area (V
Diode forward current, limited by T
T
Diode pulsed current, tp limited by T
jmax
I
jmax
≤ 600V, Tj ≤ 175°C)
CE
jmax TC
= 25°C
= 100°C
C
I
jmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, V
≤ 400V, Tj ≤ 150°C
CC
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
CE
I
C
Cpuls
-
I
F
Fpuls
V
GE
t
SC
P
tot
T
j
T
stg
600 V
40
A
20
60
60
40
20
60
±20
5
V
µs
166 W
-40...+175
-55...+175
°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1 Rev. 2.4 Sep. 07
Page 2
IKP20N60T
TrenchStop
®
Series IKW20N60T
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
R
thJC
thJCD
0.9
K/W
1.5
R
junction – case
Thermal resistance,
junction – ambient
thJA
62
40
R
Electrical Characteristic, at T
Parameter Symbol Conditions
= 25 °C, unless otherwise specified
j
Value
Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V
(BR)CESVGE
V
V
V
I
CES
I
GES
g
R
fs
VGE = 15V, IC=20A
CE(sat)
VGE=0V, IF=20A
F
IC=290µA,VCE=V
GE(th)
VCE=600V,
VCE=0V,VGE=20V
VCE=20V, IC=20A
Gint
=0V, IC=0.2mA
T
=25°C
j
T
=175°C
j
T
=25°C
j
=175°C
T
j
VGE=0V
=25°C
T
j
=175°C
T
j
600 - -
-
-
-
-
4.1 4.9 5.7
GE
-
-
1.5
1.9
1.65
1.6
-
-
- - 100 nA
- 11 - S
-
2.05
-
2.05
-
40
1000
V
µA
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
C
C
C
Q
L
iss
oss
rss
Gate
E
measured 5mm (0.197 in.) from case
Short circuit collector current1)
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance L
an d Stray capacity Cσ due to dynamic test circuit in Figure E.
σ
I
C(SC)
V
=25V,
CE
V
=0V,
GE
f=1MHz
VCC=480V, IC=20A
V
=15V
GE
TO-247-3-21
TO-220-3-1
=15V,tSC≤5 µs
V
GE
V
= 400V,
CC
≤ 150°C
T
j
-
-
-
1100
71
32
-
pF
-
-
- 120 - nC
- 13 7 - nH
- 183.3 - A
Power Semiconductors
2 Rev. 2.4 Sep. 07
Page 3
IKP20N60T
TrenchStop
®
Series IKW20N60T
Switching Characteristic, Inductive Load, at T
Parameter Symbol Conditions
=25 °C
j
Value
min. Typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=25°C,
j
V
=400V,IC=20A,
CC
=0/15V,
V
GE
=12 Ω,
R
G
2)
L
=131nH,
σ
2)
C
=31pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 18 -
- 14 -
- 199 -
- 42 -
- 0.31 -
- 0.46 -
- 0.77 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
Q
I
di
rr
rr
rrm
rr
/dt
T
=25°C,
j
=400V, IF=20A,
V
R
di
/dt=880A/µs
F
- 41 - ns
- 0.31 - µC
- 13.3 - A
- 711 -
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter Symbol Conditions
min. Typ. max.
IGBT Characteristic
t
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=175°C,
j
V
=400V,IC=20A,
CC
V
=0/15V,
GE
= 12 Ω
R
G
1)
L
=131nH,
σ
1)
C
=31pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 18 -
- 18 -
- 223 -
- 76 -
- 0.51 -
- 0.64 -
- 1.15 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
Q
I
di
rr
rr
rrm
rr
/dt
T
=175°C
j
V
=400V, IF=20A,
R
/dt=880A/µs
di
F
- 176 - ns
- 1.46 - µC
- 18.9 - A
- 467 -
Value
Unit
ns
mJ
A/µs
Unit
ns
mJ
A/µs
1)
Leakage inductance L
an d Stray capacity Cσ due to dynamic test circuit in Figure E.
σ
Power Semiconductors
3 Rev. 2.4 Sep. 07
Page 4
IKP20N60T
60A
50A
40A
30A
20A
, COLLECTOR CURRENT
C
I
10A
0A
10Hz 100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
≤ 175°C, D = 0.5, VCE = 400V,
j
V
GE
TC=80°C
TC=110°C
I
c
I
c
= 0/+15V, RG = 12Ω)
TrenchStop
10A
1A
, COLLECTOR CURRENT
C
I
0.1A
1V 10V 100V 1000V
Figure 2. Safe operating area
®
Series IKW20N60T
tp=2µs
10µs
50µs
1ms
DC
10ms
VCE, COLLECTOR-EMITTER VOLTAGE
(D = 0, T
V
GE
= 25°C, Tj ≤175°C;
C
=15V)
160W
140W
120W
100W
80W
60W
, POWER DISSIPATION
tot
40W
P
20W
0W
25°C 50°C 75°C 100°C 125°C 150°C
, CASE TEMPERATURE
T
C
Figure 3. Power dissipation as a function of
30A
25A
20A
15A
10A
, COLLECTOR CURRENT
C
I
5A
0A
Figure 4. Collector current as a function of
case temperature
≤ 175°C)
(T
j
25°C 75°C 125°C
TC, CASE TEMPERATURE
case temperature
≥ 15V, Tj ≤ 175°C)
(V
GE
Power Semiconductors
4 Rev. 2.4 Sep. 07
Page 5
4
IKP20N60T
50A
VGE=20V
40A
30A
20A
, COLLECTOR CURRENT
C
I
10A
0A
0V 1V 2V 3V
Figure 5. Typical output characteristic
15V
13V
11V
9V
7V
V
, COLLECTOR-EMITTER VOLTAGE
CE
(
T
= 25°C)
j
TrenchStop
50A
0A
30A
20A
, COLLECTOR CURRENT
C
I
10A
0A
0V 1V 2V 3V 4V
Figure 6. Typical output characteristic
®
Series IKW20N60T
VGE=20V
15V
13V
11V
9V
7V
V
, COLLECTOR-EMITTER VOLTAGE
CE
(Tj = 175°C)
35A
30A
25A
20A
15A
, COLLECTOR CURRENT
C
10A
I
5A
0A
0V 2V 4V 6V 8V
TJ=175°C
25°C
V
, GATE-EMITTER VOLTAGE
GE
Figure 7. Typical transfer characteristic
=10V)
(V
CE
2.5V
2.0V
1.5V
1.0V
0.5V
COLLECTOR-EMITT SATURATION VOLTAGE
CE(sat),
0.0V
V
Figure 8. Typical collector-emitter
IC=40A
IC=20A
IC=10A
0°C 50°C 100°C 150°C
T
, JUNCTION TEMPERATURE
J
saturation voltage as a function of
junction temperature
(
V
= 15V)
GE
Power Semiconductors
5 Rev. 2.4 Sep. 07
Page 6
IKP20N60T
100ns
t
d(on)
10ns
t, SWITCHING TIMES
t
r
1ns
0A 5A 10A 15A 20A 25A 30A 35A
I
Figure 9. Typical switching times as a
, COLLECTOR CURRENT
C
function of collector current
(inductive load,
V
= 400V, V
CE
T
=175°C,
J
= 0/15V, RG = 12,
GE
Dynamic test circuit in Figure E)
TrenchStop
t
d(off)
t
f
®
Series IKW20N60T
t
d(off)
t
100ns
f
t, SWITCHING TIMES
t
d(on)
t
r
10ns
10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω
R
, GATE RESISTOR
G
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
V
= 400V, V
CE
T
= 175°C,
J
= 0/15V, IC = 20A,
GE
Dynamic test circuit in Figure E)
7V
6V
t
d(off)
5V
100ns
4V
t
f
3V
t, SWITCHING TIMES
t
d(on)
t
r
10ns
25°C 50°C 75°C 100°C 125°C 150°C
T
, JUNCTION TEMPERATURE
J
Figure 11. Typical switching times as a
2V
GATE-EMITT TRSHOLD VOLTAGE
1V
GE(th),
V
0V
-50°C 0°C 50°C 100°C 150°C
Figure 12. Gate-emitter threshold voltage as
function of junction temperature
(inductive load,
V
= 0/15V, IC = 20A, RG=12,
GE
V
CE
= 400V,
Dynamic test circuit in Figure E)
max.
typ .
min.
T
, JUNCTION TEMPERATURE
J
a function of junction temperature
(
I
= 0.29mA)
C
Power Semiconductors
6 Rev. 2.4 Sep. 07
Page 7
2.0mJ
IKP20N60T
2.4mJ
2.0mJ
1.6mJ
1.2mJ
0.8mJ
E, SWITCHING ENERGY LOSSES
0.4mJ
0.0mJ
Figure 13. Typical switching energy losses
*) Eon and Ets include losses
due to diode recovery
E
off
Eon*
0A 5A 10A 15A 20A 25A 30A 35A
I
, COLLECTOR CURRENT
C
as a function of collector current
(inductive load,
V
= 400V, V
CE
T
= 175°C,
J
= 0/15V, RG = 12,
GE
Dynamic test circuit in Figure E)
TrenchStop
Ets*
E, SWITCHING ENERGY LOSSES
®
Series IKW20N60T
2.4mJ
2.0mJ
1.6mJ
1.2mJ
0.8mJ
0.4mJ
0.0mJ
*) Eon and Ets include losses
due to diode recovery
Eon*
0Ω 15Ω 30Ω 45Ω 60Ω
R
, GATE RESISTOR
G
Ets*
E
off
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
V
= 400V, V
CE
Dynamic test circuit in Figure E)
T
= 175°C,
J
= 0/15V, IC = 20A,
GE
*) Eon and Ets include losses
due to diode recovery
1.0mJ
0.8mJ
E, SWITCHING ENERGY LOSSES
0.6mJ
0.4mJ
0.2mJ
0.0mJ
E
off
Eon*
25°C 50°C 75°C 100°C 125°C 150°C
T
, JUNCTION TEMPERATURE
J
Figure 15. Typical switching energy losses
Ets*
1.8mJ
1.6mJ
1.4mJ
1.2mJ
1.0mJ
0.8mJ
0.6mJ
0.4mJ
E, SWITCHING ENERGY LOSSES
0.2mJ
0.0mJ
Figure 16. Typical switching energy losses
as a function of junction
temperature
(inductive load,
= 0/15V, IC = 20A, RG = 12,
V
GE
V
CE
= 400V,
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
due to diode recovery
Ets*
E
off
Eon*
300V 350V 400V 450V 500V 550V
V
, COLLECTOR-EMITTER VOLTAGE
CE
as a function of collector emitter
voltage
(inductive load,
V
= 0/15V, IC = 20A, RG = 12,
GE
Dynamic test circuit in Figure E)
T
= 175°C,
J
Power Semiconductors
7 Rev. 2.4 Sep. 07
Page 8
(
)
IKP20N60T
15V
120V
10V
, GATE-EMITTER VOLTAGE
GE
5V
V
0V
0nC 30nC 60nC 90nC 120nC
Q
Figure 17. Typical gate charge
(
I
, GATE CHARGE
GE
=20 A)
C
480V
TrenchStop
1nF
100pF
c, CAPACITANCE
10pF
Figure 18. Typical capacitance as a function
®
Series IKW20N60T
C
iss
C
oss
C
rss
0V 10V 20V 30V 40V
V
, COLLECTOR-EMITTER VOLTAGE
CE
of collector-emitter voltage
(
V
=0V, f = 1 MHz)
GE
12µs
300A
10µs
250A
8µs
200A
6µs
150A
4µs
100A
2µs
, short circuit COLLECTOR CURRENT
50A
sc
C
I
0A
12V 14V 16V 18V
V
, GATE-EMITTETR VOLTAGE
GE
Figure 19. Typical short circuit collector
, SHORT CIRCUIT WITHSTAND TIME
SC
t
0µs
Figure 20. Short circuit withstand time as a
current as a function of gateemitter voltage
(
V
≤ 400V, Tj ≤ 150°C)
CE
10V 11V 12V 13V 14V
V
, GATE-EMITETR VOLTAGE
GE
function of gate-emitter voltage
(
V
=600V, start at T
CE
T
<150°C)
Jmax
=25°C,
J
Power Semiconductors
8 Rev. 2.4 Sep. 07
Page 9
1.8µC
τ
τ
/
6
τ
τ
/
IKP20N60T
D=0.5
0.2
-1
10
K/W
-2
10
K/W
, TRANSIENT THERMAL RESISTANCE
thJC
Z
Figure 21. IGBT transient thermal resistance
0.1
0.05
0.02
R ,(K/W)
0.18715 6.925*10-2
0.31990 1.085*10
0.30709 6.791*10-4
0.07041 9.59*10
R
1
0.01
C1=
1/R1
C2=
single pulse
1µs10µs100µs 1ms 10ms 100ms
t
, PULSE WIDTH
P
(
D = tp / T)
TrenchStop
τ
, (s)
-2
-5
R
2
R
2
2
®
Series IKW20N60T
0
10
K/W
D=0.5
10
-1
K/W
0.2
0.1
0.05
R ,(K/W)
0.13483 9.207*10-2
0.58146 1.821*10
0.44456 1.47*10-3
0.33997 1.254*10
R
0.02
0.01
, TRANSIENT THERMAL RESISTANCE
thJC
Z
10
-2
K/W
single pulse
1µs10µs100µs 1ms 10ms 100ms
t
, PULSE WIDTH
P
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(
D=t
/T)
P
1
C1=
1/R1
C2=
τ
, (s)
2
-2
-4
R
2
R
2
250ns
200ns
150ns
TJ=175°C
100ns
, REVERSE RECOVERY TIME
rr
t
50ns
TJ=25°C
0ns
600A/µs 900A/µs 1200A/µs
Figure 23. Typical reverse recovery time as
diF/dt, DIODE CURRENT SLOPE
1.6µC
1.4µC
1.2µC
1.0µC
0.8µC
0.6µC
, REVERSE RECOVERY CHARGE
0.4µC
rr
Q
0.2µC
Figure 24. Typical reverse recovery charge
a function of diode current slope
(
V
=400V, IF=20A,
R
Dynamic test circuit in Figure E)
TJ=175°C
TJ=25°C
600A/µs 900A/µs 1200A/µs
diF/dt, DIODE CURRENT SLOPE
as a function of diode current
slope
(
V
= 400V, IF = 20A,
R
Dynamic test circuit in Figure E)
Power Semiconductors
9 Rev. 2.4 Sep. 07
Page 10
i
IKP20N60T
TJ=175°C
24A
20A
16A
TJ=25°C
12A
8A
, REVERSE RECOVERY CURRENT
4A
rr
I
0A
600A/µs 900A/µs 1200A/µs
Figure 25. Typical reverse recovery current
diF/dt, DIODE CURRENT SLOPE
as a function of diode current
slope
(
V
= 400V, IF = 20A,
R
Dynamic test circuit in Figure E)
TrenchStop
-750A/µs
-600A/µs
-450A/µs
-300A/µs
/dt, DIODE PEAK RATE OF FALL
-150A/µs
rr
d
OF REVERSE RECOVERY CURRENT
0A/µs
Figure 26. Typical diode peak rate of fall of
®
Series IKW20N60T
TJ=25°C
TJ=175°C
600A/µs 900A/µs 1200A/µs
diF/dt, DIODE CURRENT SLOPE
reverse recovery current as a
function of diode current slope
(VR=400V, IF=20A,
Dynamic test circuit in Figure E)
50A
40A
30A
20A
, FORWARD CURRENT
F
I
10A
0A
0V 1V 2V
Figure 27. Typical diode forward current as
TJ=25°C
175°C
V
, FORWARD VOLTAGE
F
2.0V
1.5V
1.0V
, FORWARD VOLTAGE
F
V
0.5V
0.0V
Figure 28. Typical diode forward voltage as a
a function of forward voltage
IF=40A
20A
10A
0°C 50°C 100°C 150°C
T
, JUNCTION TEMPERATURE
J
function of junction temperature
Power Semiconductors
10 Rev. 2.4 Sep. 07
Page 11
IKP20N60T
PG-TO-220-3-1
TrenchStop
®
Series IKW20N60T
Power Semiconductors
11 Rev. 2.4 Sep. 07
Page 12
IKP20N60T
TrenchStop
®
Series IKW20N60T
PG-TO247-3-21
Power Semiconductors
12 Rev. 2.4 Sep. 07
Page 13
τ
τ
τ
IKP20N60T
TrenchStop
®
Series IKW20N60T
i,v
+
di /dt
F
I
F
I
rrm
t=t t
rr S F
Q=Q Q
rr S F
t
rr
t
S
Q
Q
S
+
t
F
F
90% I
10% I
di /dt
rrm
rr
rrm
t
V
R
Figure C. Definition of diodes
switching characteristics
p(t)
1
rrrr
1
T(t)
j
12 n
2
2
n
n
rr
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
13 Rev. 2.4 Sep. 07
Page 14
IKP20N60T
TrenchStop
®
Series IKW20N60T
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 9/12/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
14 Rev. 2.4 Sep. 07
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