Datasheet IGP06N60T Datasheet

IGP06N60T

TRENCHSTOP™ Series q

Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology

Features:

 Very low V
 Maximum Junction Temperature 175°C
 Short circuit withstand time 5s
 TRENCHSTOP™ and Fieldstop technology for 600V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

 Low EMI
 Qualified according to JEDEC1for target applications
 Pb-free lead plating; RoHS compliant
 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:

 Variable Speed Drive for washing machines and air conditioners
 Buck converters

Type V

IGP06N60T 600V 6A 1.5V

1.5V (typ.)

CE(sat)

CEIC;Tc=100°CVCE(sat),Tj=25°CTj,max

175C

G

PG-TO220-3

Marking Package

G06T60 PG-TO220-3

Maximum Ratings
Parameter Symbol Value Unit

C

E

Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by T

jmax

TC= 25C

V

CE

I

C

TC= 100C

Pulsed collector current, tplimited by T

jmax

Turn off safe operating area, VCE= 600V, Tj= 175C, tp= 1µs
Gate-emitter voltage
Short circuit withstand time

2)

VGE= 15V, VCC 400V, Tj 150C
Power dissipation

TC= 25C

Operating junction temperature
Storage temperature

I

Cpuls

­V

GE

t

SC

P

tot

T

j

T

stg

Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s

1

J-STD-020 and JESD-022

2)

Allowed number of short circuits: <1000; time between short circuits: >1s.

600 V

12

6

18
18

20

5

88 W

-40...+175

-55...+150
260

A

V

s

C

IFAG IPC TD VLS

1 Rev. 2.3 20.09.2013

IGP06N60T

TRENCHSTOP™ Series q

Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic

IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient

Electrical Characteristic, at Tj= 25 C, unless otherwise specified

Parameter Symbol Conditions

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current
Transconductance
Integrated gate resistor

R

thJC

R

thJA

V

(BR)CESVGE

V

CE(sat)

V

GE(th)

I

CES

I

GES

g

fs

R

Gint

=0V,

IC=0.25mA
VGE= 15V, IC=6A
Tj=25C
Tj=175C
IC=0.18mA,
VCE=V

GE

VCE=600V,
VGE=0V

Tj=25C
Tj=175C
VCE=0V,VGE=20V
VCE=20V, IC=6A

1.7 K/W

62

Value

min. typ. max.

600 - - V

-

-

1.5

1.8

2.05

4.1 4.6 5.7

-

-

-

-

40

700

- - 100 nA

- 3.6 - S

none Ω

Unit

µA

Dynamic Characteristic

Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge

C
C
C
Q

iss

oss
rss
Gate

VCE=25V,
VGE=0V,
f=1MHz

VCC=480V, IC=6A
VGE=15V

Internal emitter inductance

L

E

measured 5mm (0.197 in.) from case
Short circuit collector current

1)

I

C(SC)

VGE=15V,tSC 5s
VCC= 400V,
Tj= 25 C

1)

Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS

2 Rev. 2.3 20.09.2013

- 368 - pF

- 28 -

- 11 -

- 42 - nC

- 7 - nH

- 55 - A

TRENCHSTOP™ Series q

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter Symbol Conditions

IGBT Characteristic

Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

Switching Characteristic, Inductive Load, at Tj=175 C

Parameter Symbol Conditions

IGBT Characteristic

Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

Tj=25C,
VCC=400V,IC=6A,
VGE=0/15V,rG=23,
L=60nH,C=40pF

L, Cfrom Fig. E

Energy losses include
“tail” and diode reverse
recovery.

Diode used IDP06E60

Tj=175C,
VCC=400V,IC=6A,
VGE=0/15V,rG= 23
L=60nH,C=40pF

L, Cfrom Fig. E

Energy losses include
“tail” and diode reverse
recovery.

Diode used IDP06E60

IGP06N60T

Value

Unit

min. typ. max.

- 9 - ns

- 6 -

- 130 -

- 58 -

- 0.09 - mJ

- 0.11 -

- 0.2 -

Value

Unit

min. typ. max.

- 9 - ns

- 8 -

- 165 -

- 84 -

- 0.14 - mJ

- 0.18 -

- 0.335 -

IFAG IPC TD VLS

3 Rev. 2.3 20.09.2013

18A

Figur

e1.

Collector current as a function of

Figure

2.Safe operating area

Figure

3.Power dissipation as a function of

Figure

4.Collector current as a function of

I

c

I

c

IGP06N60T

TRENCHSTOP™ Series q

tp=1µs

10A

5µs

15A

TC=80°C

12A

9A

6A

, COLLECTOR CURRENT

C

I

3A

0A

100Hz 1kHz 10kHz 100kHz

TC=110°C

f, SWITCHINGFREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

switching frequency

(Tj 175C, D = 0.5, VCE= 400V,
VGE= 0/15V, rG= 23)

1A

, COLLECTOR CURRENT

C

I

0,1A

1V 10V 100V 1000V

(D = 0, TC= 25C,
Tj175C;VGE=0/15V)

10µs

50µs

500µs

5ms

DC

80W

60W

40W

, POWER DISSIPATION

tot

P

20W

0W

25°C 50°C 75°C 100°C 125°C 150°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

case temperature

(Tj 175C)

15A

10A

5A

, COLLECTOR CURRENT

C

I

0A

25°C 75°C 125°C

case temperature

(VGE 15V, Tj 175C)

IFAG IPC TD VLS

4 Rev. 2.3 20.09.2013

15A

12A

15A

Figure

5.Typical output characteristic

Figure

6.Typical output characteristic

Figure

7.Typical transfer characteristic

Figure

8.Typical collector

-

emitter

VGE=20V

IGP06N60T

TRENCHSTOP™ Series q

VGE=20V

, COLLECTOR CURRENT

I

12A

9A

6A

C

3A

0A

15V

13V
11V

9V
7V

0V 1V 2V 3V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

(Tj= 25°C)

15V
13V

9A

6A

, COLLECTOR CURRENT

C

I

3A

0A

11V

9V
7V

0V 1V 2V 3V

(Tj= 175°C)

15A

12A

9A

6A

, COLLECTOR CURRENT

C

I

3A

0A

0V 2V 4V 6V 8V 10V

TJ=175°C

25°C

V

, GATE-EMITTER VOLTAGE T

GE

(VCE=20V)

2,5V

2,0V

1,5V

1,0V

0,5V

COLLECTOR-EMITT SATURATION VOLTAGE

CE(sat),

0,0V

V

-50°C 0°C 50°C 100°C

, JUNCTION TEMPERATURE

J

saturation voltage as a function of
junction temperature

(VGE= 15V)

IC=12A

IC=6A

IC=3A

IFAG IPC TD VLS

5 Rev. 2.3 20.09.2013

t

Figure

9.Typical switching times as a

Figure

10.Typical switching times as a

Figure

11.Typical switching times as a

Figure

12.Gate

-

emitter threshold voltage as

d(off)

IGP06N60T

TRENCHSTOP™ Series q

t

d(off)

100ns

t, SWITCHING TIMES

t

f

t

10ns

d(on)

t

r

1ns

0A 3A 6A 9A 12A 15A

IC, COLLECTOR CURRENT RG, GATE RESISTOR

function of collector current

(inductive load, TJ=175°C,
VCE= 400V, VGE= 0/15V, r

Dynamic test circuit in Figure E)

= 23Ω,

G

100ns

t

f

10ns

t, SWITCHING TIMES

1ns

    

function of gate resistor

(inductive load, TJ=175°C,
VCE= 400V, VGE= 0/15V, IC= 6A,

Dynamic test circuit in Figure E)

t

d(on)

t

r

100ns

t, SWITCHING TIMES

10ns

1ns

t

t

d(off)

f

6V

5V

4V

t

d(on)

3V

t

r

50°C 100°C 150°C

2V

GATE-EMITT TRSHOLD VOLTAGE

1V

GE(th),

V

0V

-50°C 0°C 50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

function of junction temperature

(inductive load, VCE= 400V,
VGE= 0/15V, IC= 6A, r

= 23Ω,

G

a function of junction temperature

(IC= 0.18mA)

Dynamic test circuit in Figure E)

max.

typ.

min.

IFAG IPC TD VLS

6 Rev. 2.3 20.09.2013

IGP06N60T

Figure

13.Typical switching energy losses

F

igure

14

. Typical switching energy losses

0,0mJ

0,1mJ

0,2mJ

0,3mJ

0,4mJ

0,5mJ

Figure

15.Typical switching energy losses

Figure

16.Typical switching energy losses

TRENCHSTOP™ Series q

E, SWITCHING ENERGY LOSSES

0,6 mJ

0,5 mJ

0,4 mJ

0,3 mJ

0,2 mJ

0,1 mJ

0,0 mJ

*) Eonand Etsinclude losses

due to diode recovery

E

off

Eon*

0A 2A 4A 6A 8A 10A

Ets*

E, SWITCHING ENERGY LOSSES

0,4 mJ

0,3 mJ

0,2 mJ

0,1 mJ

0,0 mJ

*) Eonand Etsinclude losses

due to diode recovery

   

IC, COLLECTOR CURRENT RG, GATE RESISTOR

as a function of collector current

(inductive load, TJ=175°C,
VCE=400V, VGE=0/15V, r

=23Ω,

G

Dynamic test circuit in Figure E)

as a function of gate resistor

(inductive load, TJ=175°C,
VCE= 400V, VGE= 0/15V, IC= 6A,

Dynamic test circuit in Figure E)

Ets*

Eon*

E

off

E, SWITCHING ENERGY LOSSES

0,4mJ

0,3mJ

0,2mJ

0,1mJ

0,0mJ

*) Eonand Etsinclude losses

due to diode recovery

Ets*

E

off

*) Eonand Etsinclude losses

due to diode recovery

E, SWITCHING ENERGY LOSSES

Eon*

50°C 100°C 150°C

200V 300V 400V 500V

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE

as a function of junction
temperature

(inductive load, VCE=400V,
VGE= 0/15V, IC= 6A, r

= 23Ω,

G

Dynamic test circuit in Figure E)

as a function of collector emitter
voltage

(inductive load, TJ= 175°C,
VGE= 0/15V, IC= 6A, r
Dynamic test circuit in Figure E)

= 23Ω,

G

Ets*

E

Eon*

off

IFAG IPC TD VLS

7 Rev. 2.3 20.09.2013

15V

Figure

17.Typical gate charge

Figure

18.Typical capacitance as a function

C(sc)

Figure

19.Typical short circuit collector

Figure

20.Short circuit withstand time as a

10V

120V

480V

IGP06N60T

TRENCHSTOP™ Series q

1nF

C

iss

100pF

, GATE-EMITTERVOLTAGE

GE

5V

V

0V

0nC 10nC 20nC 30nC 40nC 50nC

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

(IC= 6 A)

80A

60A

c, CAPACITANCE

10pF

0V 10V 20V

C

oss

C

rss

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

8µs

40A

20A

, short circuit COLLECTOR CURRENT

I

0A

12V 14V 16V 18V

VGE, GATE-EMITTETRVOLTAGE VGE, GATE-EMITETRVOLTAGE

current as a function of gate­emitter voltage

(VCE 400V, Tj 150C)

IFAG IPC TD VLS

6µs

4µs

2µs

, SHORT CIRCUIT WITHSTAND TIME

SC

t

0µs

10V 11V 12V 13V 14V

function of gate-emitter voltage

(VCE=400V, start at TJ=25°C,
T

<150°C)

Jmax

8 Rev. 2.3 20.09.2013

IGP06N60T

1µs

10µs

100µs

1ms

10ms

100ms

Figure

21.IGBT transient thermal







-

2

-

3

-

4

0.2483

4.717*10

-

5

C1=



1

/

R

1

C2=



2

/

R

2

TRENCHSTOP™ Series q

100K/W

10-1K/W

, TRANSIENT THERMALIMPEDANCE

thJC

Z

10-2K/W

D=0.5

0.2

0.1

0.05

0.02

0.01
single pulse

impedance

(D = tp/ T)

R, (K/ W)

0.3837 5.047*10

0.4533 4.758*10

0.5877 4.965*10

R

1

tP, PULSE WIDTH

, (s )

R

2

IFAG IPC TD VLS

9 Rev. 2.3 20.09.2013

IGP06N60T

TRENCHSTOP™ Series q

PG-TO220-3

IFAG IPC TD VLS

10 Rev. 2.3 20.09.2013

IGP06N60T

I

rrm

90%

10%

di /dt

i,v

di /dt

12n

T(t

)

j1



22n

n



T

C

Figure A. Definition of switching times

TRENCHSTOP™ Series q

t =t t

+

F

I

F

r r S F

Q =Q Q

r r S F

t

r r

t

S

+

t

F

Q

S

Figure C. Definition of diodes
switching characteristics

r r

1

p(t)

r

Figure D. Thermal equivalent
circuit

t

Q

F

I

r r m

V

r r

I

r r m

R

r

rr

Figure B. Definition of switching losses

IFAG IPC TD VLS

11 Rev. 2.3 20.09.2013

IGP06N60T

TRENCHSTOP™ Series q

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.

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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

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Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.

IFAG IPC TD VLS

12 Rev. 2.3 20.09.2013