Page 1
IGD06N60T
TrenchStop® Series q
Low Loss IGBT: IGBT in TrenchStop
Features:
• Very low V
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• TrenchStop
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• Low EMI
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
• Variable Speed Drive for washing machines and air conditioners
• Buck converters
Type
IGD06N60T 600V 6A 1.5V
1.5 V (typ.)
CE(sat)
®
and Fieldstop technology for 600 V applications offers :
1
for target applications
V
CE
I
C;Tc=100°C
V
CE(sat),Tj=25°CTj,max
®
and Fieldstop technology
Marking Package
175°C
G06T60 PG-TO-252-3-11
C
G
E
PG-TO-252-3-11 (D-PAK)
(TO-252AA)
Maximum Ratings
Parameter Symbol Value Unit
V
Collector-emitter voltage
DC collector current, limited by T
T
= 25°C
C
= 100°C
T
C
jmax
Pulsed collector current, tp limited by T
Turn off safe operating area
V
≤ 600V, Tj ≤ 175°C
CE
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, V
≤ 400V, Tj ≤ 150°C
CC
Power dissipation
= 25°C
T
C
Operating junction temperature
Storage temperature
Soldering temperature
I
jmax
CE
I
C
Cpuls
-
V
GE
t
SC
P
tot
T
j
T
stg
600 V
12
6
A
18
18
±20
5
88 W
-40...+175
-55...+175
V
µs
°C
260
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1 December 06
Page 2
IGD06N60T
TrenchStop® Series q
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
R
thJC
thJA
1.7
K/W
62
R
junction – ambient
Electrical Characteristic, at T
Parameter Symbol Conditions
= 25 °C, unless otherwise specified
j
Value
Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V
(BR)CESVGE
V
V
I
CES
I
GES
g
R
fs
VGE = 15V, IC=6A
CE(sat)
IC=0.18mA,
GE(th)
VCE=600V,
VCE=0V,VGE=20V
VCE=20V, IC=6A
Gint
=0V,
=0.25mA
I
C
T
=25°C
j
T
=175°C
j
V
CE=VGE
VGE=0V
T
=25°C
j
=175°C
T
j
600 - -
-
-
1.5
1.8
2.05
V
4.1 4.6 5.7
-
-
-
-
40
700
µA
- - 100 nA
- 3.6 - S
none
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
C
C
C
Q
L
iss
oss
rss
Gate
E
V
=25V,
CE
V
=0V,
GE
f=1MHz
VCC=480V, IC=6A
V
=15V
GE
- 368 -
pF
- 28 -
- 11 -
- 42 - nC
- 7 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
I
C(SC)
=15V,tSC≤5 µs
V
GE
V
= 400V,
CC
= 25°C
T
j
- 55 - A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2 December 06
Page 3
IGD06N60T
TrenchStop® Series q
Switching Characteristic, Inductive Load, at T
Parameter Symbol Conditions
=25 °C
j
Value
Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=25°C,
j
V
=400V,IC=6A,
CC
V
=0/15V,
GE
=23Ω,
R
G
1)
L
=60nH,
σ
2)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
- 9 -
- 6 -
- 130 -
- 58 -
- 0.09 -
- 0.11 -
- 0.2 -
ns
mJ
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=175°C,
j
V
=400V,IC=6A,
CC
V
=0/15V,
GE
= 23Ω
R
G
2)
L
=60nH,
σ
2)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery
3)
.
- 9 -
- 8 -
- 165 -
- 84 -
- 0.14 -
- 0.18 -
- 0.335 -
Value
Unit
ns
mJ
1)
Leakage inductance L
2)
Diode used IDP06E60
an d Stray capacity Cσ due to dynamic test circuit in Figure E.
σ
Power Semiconductors
3 December 06
Page 4
IGD06N60T
18A
15A
TC=80°C
12A
9A
6A
, COLLECTOR CURRENT
C
I
3A
0A
100Hz 1kHz 10kHz 100kHz
I
c
I
c
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
≤ 175°C, D = 0.5, VCE = 400V,
(T
j
V
= 0/+15V, RG = 23Ω)
GE
TC=110°C
TrenchStop® Series q
tp=1µs
10A
1A
, COLLECTOR CURRENT
C
I
0,1A
1V 10V 100V 1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T
T
≤175°C;VGE=15V)
j
= 25°C,
C
5µs
10µs
50µs
500µs
5ms
DC
80W
60W
40W
, POWER DISSIPATION
tot
P
20W
0W
25°C 50°C 75°C 100°C 125°C 150°C
, CASE TEMPERATURE
T
C
Figure 3. Power dissipation as a function of
15A
10A
5A
, COLLECTOR CURRENT
C
I
0A
Figure 4. Collector current as a function of
case temperature
≤ 175°C)
(T
j
25°C 75°C 125°C
TC, CASE TEMPERATURE
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Power Semiconductors
4 December 06
Page 5
IGD06N60T
TrenchStop® Series q
15A
VGE=20V
12A
9A
6A
, COLLECTOR CURRENT
C
I
3A
0A
15V
13V
11V
9V
7V
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
= 25°C)
j
15A
VGE=20V
12A
9A
6A
, COLLECTOR CURRENT
C
I
3A
0A
15V
13V
11V
9V
7V
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
15A
12A
9A
6A
, COLLECTOR CURRENT
C
I
3A
0A
0V 2V 4V 6V 8V 10V
TJ=175°C
25°C
, GATE-EMITTER VOLTAGE
V
GE
Figure 7. Typical transfer characteristic
=20V)
(V
CE
2,5V
2,0V
1,5V
1,0V
0,5V
COLLECTOR-EMITT SATURATION VOLTAGE
CE(sat),
0,0V
V
Figure 8. Typical collector-emitter
-50°C 0°C 50°C 100°C
TJ, JUNCTION TEMPERATURE
saturation voltage as a function of
junction temperature
(V
= 15V)
GE
IC=12A
IC=6A
IC=3A
Power Semiconductors
5 December 06
Page 6
IGD06N60T
TrenchStop® Series q
t
d(off)
t
10ns
f
t
d(on)
100ns
t, SWITCHING TIMES
t
r
1ns
0A 3A 6A 9A 12A 15A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
= 400V, V
CE
=175°C,
J
= 0/15V, RG = 23,
GE
Dynamic test circuit in Figure E)
100ns
t, SWITCHING TIMES
Figure 10. Typical switching times as a
t
d(off)
t
f
10ns
1ns
10Ω 30Ω 50Ω 70Ω 90Ω
RG, GATE RESISTOR
function of gate resistor
(inductive load, T
V
= 400V, V
CE
=175°C,
J
= 0/15V, IC = 6A,
GE
Dynamic test circuit in Figure E)
t
d(on)
t
r
6V
5V
4V
3V
2V
GATE-EMITT TRSHOLD VOLTAGE
1V
GE(th),
V
0V
-50°C 0°C 50°C 100°C 150°C
Figure 12. Gate-emitter threshold voltage as
10ns
1ns
t
d(off)
t
f
t
d(on)
t
r
50°C 100°C 150°C
, JUNCTION TEMPERATURE
T
J
100ns
t, SWITCHING TIMES
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
V
= 0/15V, IC = 6A, RG = 23,
GE
= 400V,
CE
Dynamic test circuit in Figure E)
max.
typ.
min.
TJ, JUNCTION TEMPERATURE
a function of junction temperature
(I
= 0.18mA)
C
Power Semiconductors
6 December 06
Page 7
IGD06N60T
TrenchStop® Series q
*) Eon and Ets include losses
due to diode recovery
E
0A 2A 4A 6A 8A 10A
IC, COLLECTOR CURRENT
E, SWITCHING ENERGY LOSSES
0,6 mJ
0,5 mJ
0,4 mJ
0,3 mJ
0,2 mJ
0,1 mJ
0,0 mJ
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
=400V, VGE=0/15V, RG=23,
CE
=175°C,
J
Dynamic test circuit in Figure E)
Ets*
off
Eon*
0,4 mJ
0,3 mJ
0,2 mJ
0,1 mJ
E, SWITCHING ENERGY LOSSES
0,0 mJ
Figure 14. Typical switching energy losses
*) Eon and Ets include losses
due to diode recovery
10Ω 30Ω 55Ω 80Ω
RG, GATE RESISTOR
as a function of gate resistor
(inductive load, T
V
= 400V, V
CE
=175°C,
J
= 0/15V, IC = 6A,
GE
Dynamic test circuit in Figure E)
Ets*
Eon*
E
off
*) Eon and Ets include losses
due to diode recovery
0,4mJ
0,3mJ
Ets*
0,2mJ
E
off
0,1mJ
E, SWITCHING ENERGY LOSSES
Eon*
0,0mJ
50°C 100°C 150°C
, JUNCTION TEMPERATURE
T
J
Figure 15. Typical switching energy losses
0,5mJ
0,4mJ
0,3mJ
0,2mJ
E, SWITCHING ENERGY LOSSES
0,1mJ
0,0mJ
Figure 16. Typical switching energy losses
as a function of junction
temperature
(inductive load, V
V
= 0/15V, IC = 6A, RG = 23,
GE
=400V,
CE
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
due to diode recovery
200V 300V 400V 500V
VCE, COLLECTOR-EMITTER VOLTAGE
as a function of collector emitter
voltage
(inductive load, T
V
= 0/15V, IC = 6A, RG = 23,
GE
= 175°C,
J
Dynamic test circuit in Figure E)
Ets*
E
Eon*
off
Power Semiconductors
7 December 06
Page 8
(
)
IGD06N60T
TrenchStop® Series q
1nF
C
15V
120V
10V
, GATE-EMITTER VOLTAGE
GE
5V
V
0V
0nC 10nC 20nC 30nC 40nC 50nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(I
= 6 A)
C
480V
100pF
c, CAPACITANCE
10pF
0V 10V 20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(V
=0V, f = 1 MHz)
GE
iss
C
oss
C
rss
12µs
80A
60A
40A
20A
, short circuit COLLECTOR CURRENT
sc
C
I
0A
12V 14V 16V 18V
, GATE-EMITTETR VOLTAGE
V
GE
Figure 19. Typical short circuit collector
10µs
8µs
6µs
4µs
2µs
, SHORT CIRCUIT WITHSTAND TIME
SC
t
0µs
Figure 20. Short circuit withstand time as a
current as a function of gateemitter voltage
(V
≤ 400V, Tj ≤ 150°C)
CE
10V 11V 12V 13V 14V
VGE, GATE-EMITETR VOLTAGE
function of gate-emitter voltage
(V
=600V, start at TJ=25°C,
CE
T
<150°C)
Jmax
Power Semiconductors
8 December 06
Page 9
τ
τ
/
IGD06N60T
TrenchStop® Series q
0
-1
K/W
K/W
D=0.5
0.2
0.1
0.05
R ,(K/W)
0.3837 5.047*10-2
0.4533 4.758*10
0.5877 4.965*10-4
0.2483 4.717*10
R
1
τ
, (s)
R
-3
-5
2
10
10
0.02
0.01
, TRANSIENT THERMAL RESISTANCE
thJC
Z
10
-2
K/W
single pulse
1µs10µs 100µs 1ms 10ms 100ms
, PULSE WIDTH
t
P
Figure 21. IGBT transient thermal resistance
(D = t
/ T)
p
C1=
1/R1
C2=
R
2
2
Power Semiconductors
9 December 06
Page 10
IGD06N60T
TrenchStop® Series q
PG-TO252-3-11
Power Semiconductors
10 December 06
Page 11
τ
τ
τ
IGD06N60T
TrenchStop® Series q
i,v
+
di /dt
F
I
F
I
rrm
Figure C. Definition of diodes
switching characteristics
1
rrrr
1
T(t)
j
t=t t
rr S F
Q=Q Q
rr S F
t
S
Q
S
2
2
t
rr
Q
F
90% I
+
t
F
rrm
t
V
R
10% I
di /dt
rr
rrm
n
n
Figure A. Definition of switching times
p(t)
12 n
rr
T
C
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance L
=60nH
σ
an d Stray capacity Cσ =40pF.
Power Semiconductors
11 December 06
Page 12
IGD06N60T
TrenchStop® Series q
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 12/13/06.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
12 December 06
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