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IFN860
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 400 mW
Power Derating 2.3 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 5 Source,
6 Drain, 7 Gate
At 25°C free air temperature: IFN860 Process NJ450L
Static Electrical Characteristics Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 20 V IG= – 1 µA, VDS= ØV
Gate Reverse Leakage Voltage I
GSS
3nAVGS= – 10V, VDS= ØV
Gate Source Cutoff Voltage V
GS(OFF)
– 0.3 – 3 V VDS= 10V, ID= 100 µA
Drain Saturation Current (Pulsed) I
DSS
10 mA VDS= 10V, VGS= ØV
Differential Gate Source Voltage |V
GS1
– V
GS2
| 25 mV V
DS
= 10V, ID= 100 µA
Dynamic Electrical Characteristics
Transconductance g
m
25 40 mS VDS= 10V, ID= – 10 mA f = 1 kHz
Common Source Input Capacitance C
iss
30 35 pF VDS= 10V, ID= – 10 mA f = 1 MHz
Common Source Reverse Transfer
C
rss
17 20 pF VDS= 10V, ID= – 10 mA f = 1 MHz
Capacitance
Equivalent Short Circuit
¯e
N
2 nV/√Hz VDG= 3V, ID= 10 mA f = 1 kHz
Input Noise Voltage
¥ Low-Noise Audio Amplifier
¥ Equivalent to Crystalonics
CD860
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 12:22 PM Page B-43
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