Datasheet IFN6450, IFN6449 Datasheet (Interfet)

B-48 01/99

IFN6449, IFN6450

N-Channel Silicon Junction Field-Effect Transistor

¥ High Voltage

At 25°C free air temperature: IFN6449 IFN6450 Process NJ42
Static Electrical Characteristics Min Max Min Max Unit Test Conditions

Gate Drain Breakdown Voltage V
Gate Source Breakdown Voltage V

Gate Reverse Current I
Gate Source Cutoff Voltage V

Drain Saturation Current (Pulsed) I

Dynamic Electrical Characteristics

Common Source Forward
Transfer Transmittance

(BR)GDO
(BR)GSO

GSS

GS(OFF)

DSS

|Y

| 0.5 3 0.5 3 mS VDS= 30V, VGS= ØV f = 1 kHz

fs

Absolute maximum ratings at TA= 25¡C

IFN6449 IFN6450
Reverse Gate Source Voltage – 100 V – 100 V
Reverse Gate Drain Voltage – 300 V – 200 V
Continuous Forward Gate Current 10 mA 10 mA
Continuous Device Power Dissipation 800 mW 800 mW
Power Derating 6.4 mW/°C 6.4 mW/°C

– 300 – 200 V IG= – 10 µA, IS= ØA
– 100 – 100 V IG= – 10 µA, ID= ØA

– 100 nA VGS= – 80V, VDS= ØV
– 100 µA VGS= – 80V, VDS= ØV TA= 150°C

– 2 – 15 – 2 – 15 V VDS= 30V, ID= 4 nA

210210mAVDS= 30V, VGS= ØV

Common Source Output Conductance g
Common Source Input Capacitance C

Common Source
Reverse Transfer Capacitance

os
iss

C

rss

100 100 µS VDS= 30V, VGS= ØV f = 1 kHz

10 10 pF VDS= 30V, VGS= ØV f = 1 MHz

55pFV

TOÐ39 Package

Dimensions in Inches (mm)

= 30V, VGS= ØV f = 1 MHz

DS

Pin Configuration

1 Source, 2 Drain, 3 Gate & Case

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