Datasheet IFN5911, IFN5912 Datasheet (Interfet)

01/99 B-47

IFN5911, IFN5912

N-Channel Dual Silicon Junction Field-Effect Transistor

Absolute maximum ratings at TA= 25¡C

Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 500 mW
Power Derating 4 mW/°C
Storage Temperature Range – 65°C to 200°C

TOÐ78 Package

See Section G for Outline Dimensions

Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Case,
5 Source, 6 Drain, 7 Gate, 8 Omitted

At 25°C free air temperature: IFN5911 IFN5912 Process NJ30L or NJ36D
Static Electrical Characteristics Min Max Min Max Unit Test Conditions

Gate Source Breakdown Voltage V

(BR)GSS

– 25 – 25 V IG= – 1 µA, VDS= ØV

Gate Reverse Current I

GSS

– 100 – 100 pA VGS= – 15V, VDS= ØV
– 250 – 250 nA VGS= – 15V, VDS= ØV TA= 150°C

Gate Operating Current I

G

– 100 – 100 pA VDG= 10V, ID= 5 mA
– 100 – 100 nA VDG= 10V, ID= 5 mA TA= 125°C

Gate Source Cutoff Voltage V

GS(OFF)

– 1– 5– 1– 5 V VDS= 10V, ID= 1 nA

Gate Source Voltage V

GS

– 0.3 – 4 – 0.3 – 4 V VDS= 10V, ID= 5 mA

Drain Saturation Current (Pulsed) I

DSS

740740mAVDS= 10V, VGS= ØV

Dynamic Electrical Characteristics

Common Source

g

fs

3000 10000 3000 10000 µS VDG= 10V, ID= 5 mA f = 1 kHz

Forward Transconductance

3000 10000 3000 10000 µS VDG= 10V, ID= 5 mA f = 100 MHz

Common Source

g

os

100 100 µS VDG= 10V, ID= 5 mA f = 1 kHz

Output Conductance

150 150 µS VDG= 10V, ID= 5 mA f = 100 MHz

Common Source Input Capacitance C

iss

55pFV

DG

= 10V, ID= 5 mA f = 1 MHz

Common Source

C

rss

1.2 1.2 pF VDG= 10V, ID= 5 mA f = 1 MHz

Reverse Transfer Capacitance
Equivalent Short Circuit

¯e

N

20 20

nV/√Hz

VDG= 10V, ID= 5 mA f = 10 kHz

Input Noise Voltage

Noise Figure NF 1 1 dB

V

DG

= 10V, ID= 5 mA

f = 10 Hz

RG= 100 KΩ

Differential Gate Current |IG1|–|IG2|20 20nAV

DG

= 10V, ID= 5 mA TA= 125°C

Saturation Drain Current Ratio I

DSS1/IDSS2

0.95 1 0.95 1 VDS= 10V, VGS= ØV

Differential Gate Source Voltage V

GS1–VGS2

10 15 mV VDG= 10V, ID= 5 mA

∆V

GS1–VGS2

20 40 µV/°C VDG= 10V, ID= 5 mA

T

A

= 25°C

Gate Source Voltage

∆T

TB= 125°C

Differential Drift

∆V

GS1–VGS2

20 40 µV/°C VDG= 10V, ID= 5 mA

T

A

= – 55°C

∆T

TB= 25°C

Transconductance Ratio g

fs1/gfs2

0.95 1 0.95 1 VDG= 10V, ID= 5 mA f = 1 kHz

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Databook.fxp 1/14/99 11:32 AM Page B-47