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IFN5911, IFN5912
N-Channel Dual Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 500 mW
Power Derating 4 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ78 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case,
5 Source, 6 Drain, 7 Gate, 8 Omitted
At 25°C free air temperature: IFN5911 IFN5912 Process NJ30L or NJ36D
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 25 – 25 V IG= – 1 µA, VDS= ØV
Gate Reverse Current I
GSS
– 100 – 100 pA VGS= – 15V, VDS= ØV
– 250 – 250 nA VGS= – 15V, VDS= ØV TA= 150°C
Gate Operating Current I
G
– 100 – 100 pA VDG= 10V, ID= 5 mA
– 100 – 100 nA VDG= 10V, ID= 5 mA TA= 125°C
Gate Source Cutoff Voltage V
GS(OFF)
– 1– 5– 1– 5 V VDS= 10V, ID= 1 nA
Gate Source Voltage V
GS
– 0.3 – 4 – 0.3 – 4 V VDS= 10V, ID= 5 mA
Drain Saturation Current (Pulsed) I
DSS
740740mAVDS= 10V, VGS= ØV
Dynamic Electrical Characteristics
Common Source
g
fs
3000 10000 3000 10000 µS VDG= 10V, ID= 5 mA f = 1 kHz
Forward Transconductance
3000 10000 3000 10000 µS VDG= 10V, ID= 5 mA f = 100 MHz
Common Source
g
os
100 100 µS VDG= 10V, ID= 5 mA f = 1 kHz
Output Conductance
150 150 µS VDG= 10V, ID= 5 mA f = 100 MHz
Common Source Input Capacitance C
iss
55pFV
DG
= 10V, ID= 5 mA f = 1 MHz
Common Source
C
rss
1.2 1.2 pF VDG= 10V, ID= 5 mA f = 1 MHz
Reverse Transfer Capacitance
Equivalent Short Circuit
¯e
N
20 20
nV/√Hz
VDG= 10V, ID= 5 mA f = 10 kHz
Input Noise Voltage
Noise Figure NF 1 1 dB
V
DG
= 10V, ID= 5 mA
f = 10 Hz
RG= 100 KΩ
Differential Gate Current |IG1|–|IG2|20 20nAV
DG
= 10V, ID= 5 mA TA= 125°C
Saturation Drain Current Ratio I
DSS1/IDSS2
0.95 1 0.95 1 VDS= 10V, VGS= ØV
Differential Gate Source Voltage V
GS1–VGS2
10 15 mV VDG= 10V, ID= 5 mA
∆V
GS1–VGS2
20 40 µV/°C VDG= 10V, ID= 5 mA
T
A
= 25°C
Gate Source Voltage
∆T
TB= 125°C
Differential Drift
∆V
GS1–VGS2
20 40 µV/°C VDG= 10V, ID= 5 mA
T
A
= – 55°C
∆T
TB= 25°C
Transconductance Ratio g
fs1/gfs2
0.95 1 0.95 1 VDG= 10V, ID= 5 mA f = 1 kHz
¥ VHF Amplifiers
¥ Wideband Differential
Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 11:32 AM Page B-47
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