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B-46 01/99
IFN5564, IFN5565, IFN5566
N-Channel Dual Silicon Junction Field-Effect Transistor
¥ Wide Band Differential
Amplifier
¥ Commutators
Absolute maximum ratings at TA= 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage – 40 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 650 mW
Power Derating 3.3 mW/°C
TOÐ71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Omitted,
5 Source, 6 Drain, 7 Gate, 8 Omitted
At 25°C free air temperature:
IFN5564 IFN5565 IFN5566 Process NJ72
Static Electrical Characteristics
Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 40 – 40 – 40 V IG= – 1µA, VDS= ØV
Gate Leakage Voltage I
GSS
– 100 – 100 – 100 pA VGS= – 20V, VDS= ØV
– 200 – 200 – 200 nA TA= 150°C
Gate Source Cutoff Voltage V
GS(OFF)
– 0.5 – 3 – 0.5 – 3 – 0.5 – 3 V VDS= 15V, ID= 1 nA
Gate Source Voltage V
GS(f)
111VV
DS
= ØV, IG= 2 mA
Saturation Current (Pulsed) I
DSS
530530530mAVDS= 15V, VGS= ØV
Static Drain Source ON Resistance rDS
(ON)
100 100 100 Ω ID= 1 mA, VGS= ØV
Dynamic Electrical Characteristics
Common Source
g
fs
7000 12500 7000 12500 7000 12500 µhmo VDG= 15V, ID= 2 mA f = 1 kHz
Forward Transconductance
7000 7000 7000 µhmo f = 100 MHz
Common Source Output T ransconductance g
os
45 45 45 µhmo VDS= 15V, ID= 2 mA f = 1 kHz
Common Source Input Capacitance C
iss
12 12 12 pF VDS= 15V, ID= 2 mA f = 1 MHz
Common Source Reverse Transfer Capacitance C
rss
333pFV
DS
= 15V, ID= 2 mA f = 1 MHz
Noise Figure NF 1 1 1 dB
V
DS
= 15V, ID= 2 mA
f = 10 Hz
RG= 1 MΩ
Equivalent Short Circuit Input Noise Voltage ¯e
N
50 50 50 nV/√Hz VDG= 15V, ID= 2 mA f = 10 Hz
Characteristics
Saturation Drain Current Ratio (Pulsed) I
DSS1
0.95 1 0.95 1 0.95 1 – VDG= 15V, VGS= ØV
I
DSS2
–
Differential Gate Source Voltage |V
GS(1)
– V
GS(2)
| 5 10 20 mV VDS= 15V, ID= 2 mA
Gate Source Voltage Differential Drift ∆|V
GS(f)
– V
GS(f)
| 10 25 50 µV/°C V
DS
= 15V, TA= 25°C TB= 125°C
∆T 102550µV/°CI
D
= 2 mA TA= 55°C TB= 25°C
Transconductance Ratio (Pulsed) g
fs(1)
0.95 1 0.9 1 0.9 1 – VDS= 15V, ID= 2 mA
g
fs(2)
–
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-46
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