Datasheet IFN5433, IFN5432, IFN5434 Datasheet (Interfet)

01/99 B-45

IFN5432, IFN5433, IFN5434

N-Channel Silicon Junction Field-Effect Transistor

Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 100 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2.4 mW/°C

TOÐ52 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate & Case

At 25°C free air temperature:

IFN5432 IFN5433 IFN5434 Process NJ903

Static Electrical Characteristics

Min Max Min Max Min Max Unit Test Conditions

Gate Source Breakdown Voltage V

(BR)GSS

– 25 – 25 – 25 V IG= – 1µA, VDS= ØV

Gate Reverse Current I

GSS

– 200 – 200 – 200 pA VGS= – 15V, VDS= ØV
– 200 – 200 – 200 nA VGS= – 15V, VDS= ØV TA= 150°C

Gate Source Cutoff Voltage V

GS(OFF)

– 4 – 10 – 3 – 9 – 1 – 4 V VDS= 5V, IG= 3 nA

Drain Saturation Current (Pulsed) I

DSS

150 100 30 mA VDS= 15V, VGS= ØV

Drain Cutoff Current

I

D(OFF)

200 200 200 pA VDS= 5V, VGS= – 10V
200 200 200 nA VDS= 5V, VGS= – 10V TA= 150°C

Drain Source ON Voltage V

DS

50 70 100 mV VGS= ØV, ID= 10 mA

Static Drain Source ON Resistance r

DS(ON)

25 7 10Ω VDS= ØV, ID= 10 mA

Dynamic Electrical Characteristics

Drain Source ON Resistance r

ds(on)

5710Ω VGS= ØV, ID= ØA f = 1 kHz

Common Source Input Capacitance C

iss

60 60 60 pF VDS= ØV, VGS= – 10V f = 1 MHz

Common Source Reverse

C

rss

20 20 20 pF VDS= ØV, VGS= – 10V f = 1 MHz

Transfer Capacitance

Switching Characteristics

Turn ON Delay Time t

d(on)

444ns

VDD= 1.5 V, V

GS(ON)

= Ø V

Rise Time t

r

111ns

V

GS(OFF)

= – 12 V, I

D(ON)

= 10 mA

Turn OFF Delay Time t

d(off)

666ns

(IFN5432) RL= 145 Ω

Fall Time t

f

30 30 30 ns

(IFN5433) RL= 143 Ω
(IFN5433) RL= 140 Ω

¥ Analog Low On Resistance

Switches

¥ Choppers

1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/13/99 2:09 PM Page B-45