Datasheet IFN5116, IFN5115, IFN5114, SMP5114, SMP5115 Datasheet (Interfet)

B-44 01/99

IFN5114, IFN5115, IFN5116

P-Channel Silicon Junction Field-Effect Transistor

¥ Analog Switches

Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 500 mW
Power Derating 4 mW/°C
Storage Temperature Range – 65°C to 200°C

TOÐ18 Package

See Section G for Outline Dimensions

Pin Configuration

1 Source 1, 2 Gate & Case, 3 Drain

Surface Mount

SMP5114, SMP5115, SMP5116

At 25°C free air temperature:

IFN5114 IFN5115 IFN5116 Process PJ99

Static Electrical Characteristics

Min Max Min Max Min Max Unit Test Conditions

Gate Source Breakdown Voltage V

(BR)GSS

30 30 30 V IG= – 1mA, VDS= ØV

Gate Reverse Current I

GSS

222nAV

GS

= 20V, VDS= ØV

10 10 10 µA VGS= 20V, VDS= ØV TA= 150°C

Gate Source Cutoff Voltage V

GS(OFF)

5103614VVDS= – 15V, IG= – 1 nA

Gate Source Forward Voltage V

GS(F)

– 1– 1– 1VV

DS

= ØV, IG= – 1 mA

Drain Saturation Current (Pulsed) I

DSS

– 30 – 90 mA VDS= – 15V, VGS= 18V

– 15 – 60 – 5 – 25 mA VDS= – 15V, VGS= 15V

Drain Cutoff Current I

D(OFF)

– 2– 2– 2nAV

DS

= – 15V, VGS= 12V

– 10 – 10 – 10 µA VDS= – 15V, VGS= 7V TA= 150°C

– 1.3 V VGS= ØV, ID= – 15 mA

Drain Source ON Voltage V

DS(ON)

– 0.8 V VGS= ØV, ID= – 7 mA

– 0.6 V VGS= ØV, ID= – 3 mA

Static Drain Source ON Resistance r

DS(ON)

75 100 150 Ω VGS= ØV, ID= – 1 mA

Dynamic Electrical Characteristics

Drain Source ON Resistance r

ds(on)

75 100 150 Ω VGS= ØV, ID= ØA f = 1 kHz

Common Source Input Capacitance C

iss

25 25 27 pF VDS=– 15V, VGS= ØV f = 1 MHz

Common Source Reverse

7pFV

DS

= – 10V, VGS= 12V f = 1 MHz

Transfer Capacitance

C

rss

7pFV

DS

= – 10V, VGS= 7V f = 1 MHz

7pF VDS= – 10V, VGS= 5V f = 1 MHz

Switching Characteristics IFN5114 IFN5115 IFN5116

Turn ON Delay Time t

d(on)

61025ns

V

DD

– 10 – 6 – 6 V

Rise Time t

r

10 20 35 ns

V

GG

20 12 8 V

Turn OFF Delay Time t

d(off)

6820ns

R

L

130 910 2000 Ω

Fall Time t

f

15 30 60 ns

R

G

100 220 390 Ω

I

D(ON)

– 15 – 7 – 3 mA

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Databook.fxp 1/14/99 12:22 PM Page B-44