Datasheet IFN146 Datasheet (Interfet)

01/99 D-5

IFN146

Dual N-Channel Silicon Junction Field-Effect Transistor

¥ Low-Noise Audio Amplifier
¥ Equivalent to Japanese 2SK146

At 25°C free air temperature: IFN146 Process NJ450
Static Electrical Characteristics Min Typ Max Unit Test Conditions

Gate Source Breakdown Voltage V
Gate Reverse Current I
Gate Source Cutoff Voltage V

Drain Saturation Current (Pulsed) I

Dynamic Electrical Characteristics

Common Source
Forward Transconductance I

Common Source Input Capacitance C
Common Source Reverse

Transfer Capacitance

(BR)GSS

GSS

GS(OFF)

DSS

g

fs

iss

C

rss

Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 40 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 375 mW
Power Derating 3 mW/°C
Storage Temperature Range – 65°C to 200°C

– 40 V IG= – 1 µA, VDS= ØV

– 1 nA VGS= – 30V, VDS= ØV
– 1 µA VGS= – 30V, VDS= ØV TA= 150°C

– 0.3 – 1.2 V VDS= 10V, ID= 1 µA

30 mA VDS= 10V, VGS= ØV

30 40

75 pF VDS= 10V, VGS= ØV f = 1 kHz
15

VDS= 10V, VGS= ØV

mS

pF

= 5 mA

DSS

VDS= 10V, ID= ØA f = 1 kHz

f = 1 kHz

Noise Figure NF 1
Differential Gate Source Voltage |V

TOÐ71 Package

Dimensions in Inches (mm)

– V

GS1

| 20 mV V

GS2

Pin Configuration

1 Source, 2 Gate, 3 Drain,
5 Source, 6 Gate, 7 Drain

VDS= 10V, ID= 5 mA

dB

RG= 100Ω

= 10V, ID= 5 mA

DS

f = 1 kHz

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