Datasheet IFN112 Datasheet (Interfet)

D-4 01/99

IFN112

N-Channel Silicon Junction Field-Effect Transistor

¥ Low-Noise, High Gain
¥ Equivalent to Japanese 2SK112

Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 360 mW
Power Derating 2.88 mW/°C
Storage Temperature Range – 65°C to 200°C

TOÐ18 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate & Case

At 25°C free air temperature: IFN112 Process NJ132H
Static Electrical Characteristics Min Max Unit Test Conditions

Gate Source Breakdown Voltage V

(BR)GSS

– 50 V IG= – 1 µA, VDS= ØV

Gate Reverse Current I

GSS

– 0.1 nA VDS= ØV, VGS= – 30V

Gate Source Cutoff Voltage V

GS(OFF)

– 0.25 – 1.2 V VDS= 15V, ID= 100 nA

Drain Saturation Current (Pulsed) I

DSS

1.2 9.0 mA VDS= 15V, VGS= ØV

Dynamic Electrical Characteristics

Common Source Forward Transconductance g

fs

734mSVDS= 15V, VGS= ØV f = 1 kHz

Typ

Common Source Input Capacitance C

iss

12 pF VDS= 15V, VGS= ØV f = 1 MHz

Common Source Reverse Transfer Capacitance C

rss

3pFV

DS

= 15V, VGS= ØV f = 1 MHz

Equivalent Short Circuit Input Noise Voltage ¯e

N

2.5 nV/√Hz VDS= 10V, ID= 5.0 mA f = 1 kHz

1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]

www.interfet.com

Databook.fxp 1/13/99 2:09 PM Page D-4