IFD-53010: 0.15 to 5.5 GHz
IFD-53110: 0.15 to 3.5 GHz
• Low Phase Noise:
-143 dBc/Hz @ 1 kHz Offset
• Output Power: -5 dBm Typ.
• Single Supply Voltage
Vcc = 5 V or Vee = -5 V
• On-Chip Terminations
Provide Good Input and
Output VSWRs
• Hermetic Gold-Ceramic
Surface Mount Package
Functional Block Diagram
1
V
CC
RF INPUT
4
CQ CQ
CQ CQ
3
100 mil Stripline PackageDescription
Hewlett-Packard's IFD-53010 and
IFD-53110 are low phase noise
silicon bipolar static digital
frequency dividers using two
scaled Emitter-Coupled-Logic
(ECL) master-slave D flip-flops
and buffer amplifiers. They are
housed in hermetic high reliability
surface mount packages suitable
Pin Configuration
V
3
EE
4
RF INPUTRF OUTPUT
V
1
CC
V
EE
2
RF OUTPUT
2
for commercial, industrial, and
military applications. Typical
applications include stabilized or
digitally controlled local oscillators for GPS, SATCOM or
military receivers, and frequency
synthesizers and counters in
instrumentation systems. The
IFD-53110 is a lower cost selected
version of the IFD-53010, and is
distinguished by a reduced
operating frequency range.
The IFD series of frequency
dividers is fabricated using
Hewlett-Packard's 18 GHz, ft,
ISOSAT™-2 silicon bipolar
process which uses nitride selfalignment, submicrometer
lithography, trench isolation, ionimplantation, gold metallization
and polyimide intermetal
dielectric and scratch protection
to achieve excellent device
uniformity, performance, and
reliability.
7-151
5965-9115E
Page 2
Absolute Maximum Ratings
SymbolParameterUnitsAbsolute Maximum
[1]
Vcc - V
P
diss
P
in
T
j
T
STG
Thermal Resistance
Notes:
1, Operation of this device above any one of these parameters may cause permanent damage.
2. T
= 25°C.
case
3. Derate at 9.3 mW/°C for TC ≥ 130°C.
Device VoltageV8
ee
Power Dissipation
[2,3]
m W650
RF Input PowerdBm+15
Junction Temperature°C200
Storage Temperature°C-65 to +200
[2]
: θjc = 107° C/W
Guaranteed Electrical Specifications, IFD-53010 and IFD-53110
T
= 25° C, ZO = 50 Ω, V
A
SymbolParameters and Test ConditionsUnitsMin.Typ.Max.
IFD-53010:
F
MAX
Maximum Clock FrequencyPin = -10 dBm (200 mVpp)GHz5.56.0
IFD-53110:
F
MAX
I
CC
Maximum Clock FrequencyPin = -10 dBm (200 mVpp)GHz3.55.0
IFD-53010 and IFD-53110: Supply CurrentmA354350
- Vee = 5.0 V
cc
Typical Design Information, T
All values apply to both IFD-53010 and IFD-53110. f
= 25° C, Z0 = 50 Ω, V
A
is 5 GHz for IFD-53010 and 3 GHz for IFD-53110 (unless
1. Minimum clock frequency when driven from a sinusoidal input. Operation to lower frequencies is possible when using input signals
with faster rise times, such as occurs in the case of a cascade of two or more IFDs.
Output Rise Time, 20% - 80%f = f
Output Fall Time, 20% - 80%f = f
test
test
psec145
psec85
7-152
Page 3
Typical Performance, T
= 25° C, ZO = 50 Ω, V
A
- Vee = 5.0 V
cc
Graphs apply to both IFD-53010 and IFD-53110 (unless otherwise noted).
0
IFD-53010 &
-10
-20
-30
-40
INPUT SENSITIVITY (dBm)
-50
IFD-53110
IFD-53010
0 1 23 45 67
FREQUENCY (GHz)
Figure 1. Input Sensitivity vs. Input
Frequency and Recommended
Operating Ranges for Nominal
Operating Conditions (T = 25°C , V
Vee = 5 V).
70
60
50
40
CC
I (mA)
30
20
10
+ 125°C
+ 25°C
- 55°C
0
IFD-53010 &
IFD-53110
-10
-20
-30
-40
INPUT SENSITIVITY (dBm)
-50
01 2345 67
FREQUENCY (GHz)
Figure 2. Input Sensitivity vs. Input
Frequency and Recommended
Operating Ranges for Worst Case
-
Operating Conditions (-55° C < T <
cc
125° C and 4.5 V < V
3:1
OUTPUT
2:1
VSWR
INPUT
IFD-53010
- Vee < 5.5 V.
cc
0
-10
-20
-30
-40
INPUT SENSITIVITY (dBm)
-50
01 234567
-55°C
25°C
125°C
FREQUENCY (GHz)
Figure 3. Input Sensitivity vs. Input
Frequency and Temperature
(Vcc - Vee = 5 V).
2
0
5.5 V
-2
5.0 V
-4
4.5 V
OUTPUT LEVEL (dBm)
-6
0
1234560
V-V
(V)
CC
EE
Figure 4. Device Current vs. Voltage
and Temperature.
-
60
-
80
-100
-120
SSB PHASE NOISE (dBc/Hz)
-140
2 TO 4 GHz
(IFD-53010 & IFD-53110)
-160
11kHz1MHz
5 GHz (IFD-53010)
OFFSET FREQUENCY
Frequency, and Input Frequency.
1:1
10100100010000
FREQUENCY (MHz)
Figure 5. Input and Output VSWR vs.
Frequency.
+100
V
in
0
in
V (mV)
V
out
-100
200
Figure 8. IFD-53010 Typical Output Response with 5 GHz Input.Figure 7. SSB Phase Noise vs. Offset
7-153
-8
10100100010000
FREQUENCY (MHz)
Figure 6. Output Power Level vs. Input
Frequency and Vcc - Vee.
TIME (psec)
+200
0
-200
out
V (mV)
Page 4
BLOCKING CAPACITORS ARE 1000 pF TYP.
BYPASS CAPACITORS ARE 47 nF min.
BLOCKING CAPACITORS MAY BE OMITTED
IF GENERATOR AND LOAD ARE AT V LEVEL.
TRANSMISSION LINES ARE 50 .
CC
V = -5.0 V
EE
F
RF INPUT
(50 )
3
C
BL
4
V
CC
PIN:
V = 0 V
CC
C
(47 nF min.)
SWINGS BETWEEN V
1
BY
2
AND V -360 mV
CC
C
BL
RF OUTPUT
CC
F/4
(50 )
Figure 9. Typical ECL Biasing Configuration, IFD-53010 and IFD-53110.
BLOCKING CAPACITORS ARE 1000 pF TYP.
BYPASS CAPACITOR SHOULD BE 47 nF min.
TO ENSURE GOOD SENSITIVITY PERFORMANCE.
TRANSMISSION LINES ARE 50 .
PIN:
V = 0 V
3
EE
C
2
BL
RF OUTPUT
F/4
(50 )
F
RF INPUT
(50 )
C
BL
4
V = 5.0 V
CC
1
C
BY
(47 nF min.)
Figure 10. Typical RF Biasing Configuration, IFD-53010 and IFD-53110.
LO OUTPUT
PROGRAMMABLE
DIVIDER
PHASE DETECTOR
STABLE REFERENCE
VCO
AFC
DIV. BY 4
LPF
Figure 11. Typical Stabilized LO Configuration, IFD-53010 and IFD-53110.
7-154
Page 5
TEST SYSTEM
Z = 50
O
PIN: 3
V = -5.0 V
EE
10 dB
GENERATOR OUTPUT:
FREQUENCY = f
LEVEL = P + 10 dB (INTO 50 LOAD)
in
4
1
V = 0 V
CC
2
10 dB
SPECTRUM
ANALYZER
P
OUT
f/4
Z = 50
in
Figure 12. Sensitivity Test Configuration, IFD-53010 and IFD-53110.
Package Dimensions
100 mil Stripline Package
1.02
(0.040)
4
0.51
(0.20)
13
NOTES: (unless otherwise specified)
1. DIMENSIONS ARE IN mm (INCHES)
2. TOLERANCES: in .xxx = ± .005
mm .xx = ± .13
0.76
(0.030)
0.10 ± 0.05
(0.004 ± 0.002)
2
2.54
(0.100)
12.57 ± 0.76
(0.495 ± 0.030)
O
5
7-155
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