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B-38 01/99
IF4510
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 1.8 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
At 25°C free air temperature: IF4510 Process NJ450H
Static Electrical Characteristics Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 20 V IG= – 1 µA, VDS= ØV
Gate Reverse Current I
GSS
– 0.1 nA VGS= – 15V, VDS= ØV
Gate Source Cutoff Voltage V
GS(OFF)
– 0.35 – 1.5 V VDS= 15V, ID= 0.5 nA
Drain Saturation Current (Pulsed) I
DSS
5mAV
DS
= 15V, VGS= ØV
Dynamic Electrical Characteristics
Common Source
g
fs
15 mS VDS= 15V, ID= 5 mA f = 1 kHz
Forward Transconductance
Common Source Input Capacitance C
iss
35 pF VDS= 15V, VGS= ØV f = 1 MHz
Common Source
C
rss
8pFVDS= 15V, VGS= ØV f = 1 MHz
Reverse Transfer Capacitance
Typ
Equivalent Short Circuit
¯e
N
1.5 nV/√Hz VDG= 12V, VGS= ØV f = 1 kHz
Input Noise Voltage
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 1:51 PM Page B-38
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