Datasheet IF4501 Datasheet (Interfet)

01/99 B-37

IF4501

N-Channel Silicon Junction Field-Effect Transistor

¥ Low-Noise, High Gain Amplifier

At 25°C free air temperature: IF4501 Process NJ450L
Static Electrical Characteristics Min Max Unit Test Conditions

Gate Source Breakdown Voltage V
Gate Reverse Current I

Gate Source Cutoff Voltage V
Drain Saturation Current (Pulsed) I

Dynamic Electrical Characteristics

Common Source
Forward Transconductance

Common Source Input Capacitance C
Common Source

Reverse Transfer Capacitance

(BR)GSS

GSS

GS(OFF)

DSS

g

fs

iss

C

rss

Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2.4 mW/°C
Storage Temperature Range – 65°C to 200°C

– 20 V IG= – 1 µA, VDS= ØV

– 0.1 nA VGS= – 10V, VDS= ØV

– 0.35 – 1.5 V VDS= 10V, ID= 0.5 nA

5mAV

= 10V, VGS= ØV

DS

15 mS VDS= 15V, ID= 5 mA f = 1 kHz

35 pF VDS= 15V, ID= 5 mA f = 1 MHz

9pFVDS= 15V, ID= 5 mA f = 1 MHz

Equivalent Short Circuit
Input Noise Voltage

TOÐ72 Package

Dimensions in Inches (mm)

¯e

N

Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Case

Typ

1.5 nV/√Hz VDG= 12V, ID= 5 mA f = 1 kHz

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