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B-34 01/99
IF3601
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings = TAat 25¡C
Reverse Gate Source Voltage & Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ39 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature: IF3601 Process NJ3600L
Static Electrical Characteristics Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 20 V IG= – 1 µA, VDS= ØV
Gate Reverse Current I
GSS
– 0.1 nA VGS= – 10V, VDS= ØV
Gate Source Cutoff Voltage V
GS(OFF)
– 0.35 – 2 V VDS= 10V, ID= 0.5 nA
Drain Saturation Current (Pulsed) I
DSS
30 mA VDS= 10V, VGS= ØV
Dynamic Electrical Characteristics Typ
Common Source
g
fs
750 mS VDS= 10V, VGS= ØV f = 1 kHz
Forward Transconductance
Common Source Input Capacitance C
iss
300 pF VDS= ØV, VGS= – 4V f = 1 MHz
Common Source
C
rss
200 pF VDS= ØV, VGS= – 4V f = 1 MHz
Reverse Transfer Capacitance
Equivalent Short Circuit
¯e
N
0.3 nV/√Hz VDG= 3V, ID= 5 mA f = 100 Hz
Input Noise Voltage
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-34
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