Datasheet IF142 Datasheet (Interfet)

01/99 B-29

IF142

N-Channel Silicon Junction Field-Effect Transistor

¥ Low-Noise, High Gain Amplifier

At 25°C free air temperature: IF142 Process NJ14AL
Static Electrical Characteristics Min Max Unit Test Conditions

Gate Source Breakdown Voltage V
Gate Reverse Current I
Gate Source Cutoff Voltage V

Gate Source Voltage V
Gate Source Forward Voltage V
Drain Saturation Current (Pulsed) I

Dynamic Electrical Characteristics

Common Source
Forward Transmittance

(BR)GSS

GSS

GS(OFF)
GS
GS(F)

DSS

Y

fs

Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 375 mW
Power Derating 3 mW/°C
Storage Temperature Range – 65°C to 200°C

– 25 V IG= – 1 µA, VDS= ØV

– 0.1 nA VGS= – 15V, VDS= ØV
– 0.2 nA VGS= – 15V, VDS= ØV TA= 150°C

– 6 V VDS= 15V, ID= 5 nA
– 5 V VDS= 15V, ID= 50 µA

1VVDS= Ø, IG= 1 mA

515mAVDS= 15V, VGS= ØV

3.5 mS VDS= 15V, VGS= ØV f = 1 kHz

Common Source
Output Conductance

Common Source Input Capacitance C
Common Source

Reverse Transfer Capacitance

Equivalent Short Circuit
Input Noise Voltage

TOÐ236AB Package

Dimensions in Inches (mm)

Pin Configuration

1 Drain, 2 Source, 3 Gate

Y

os

iss

C

rss

¯e

N

0.05 µS VDS= 15V, VGS= ØV f = 1 kHz

3pFVDS= 15V, VGS= ØV f = 1 MHz

0.6 pF VDS= 15V, VGS= ØV f = 1 MHz

Typ

4 nV/√Hz VDS= 12V, VGS= ØV f = 10 Hz

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