Datasheet IF140A, IF140 Datasheet (Interfet)

B-28 01/99

IF140, IF140A

N-Channel Silicon Junction Field-Effect Transistor

¥ Low-Noise, High Gain

Amplifiers

At 25°C free air temperature: IF140 IF140A Process NJ14AL
Static Electrical Characteristics Min Max Min Max Unit Test Conditions

Gate Source Breakdown Voltage V
Gate Reverse Current I

Gate Source Cutoff Voltage V
Gate Source Voltage V
Gate Source Forward Voltage V
Drain Saturation Current (Pulsed) I

Dynamic Electrical Characteristics

Common Source Forward Transmittance Y
Common Source Output Conductance Y
Common Source Input Capacitance C

Common Source Reverse
Transfer Capacitance

(BR)GSS

GSS

GS(OFF)
GS
GS(F)

DSS

fs
os
iss

C

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Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 375 mW
Power Derating 3 mW/°C
Storage Temperature Range – 65°C to 200°C

– 20 – 20 V IG= – 1 µA, VDS= ØV

– 0.1 – 0.1 nA VGS= – 15V, VDS= ØV
– 0.2 – 0.2 nA VGS= – 15V, VDS= ØV TA= 150°C

– 6 – 6 V VDS= 15V, ID= 5 nA
– 5 – 2.5 – 6 V VDS= 15V, ID= 50 µA

11VV

515515mAVDS= 15V, VGS= ØV

4.5 4.5 mS VDS= 15V, VGS= ØV f = 1 kHz

0.05 0.05 µS VDS= 15V, VGS= ØV f = 1 kHz
33pFV

0.6 0.6 pF VDS= 15V, VGS= ØV f = 1 MHz

= Ø, IG= 1 mA

DS

= 15V, VGS= ØV f = 1 MHz

DS

Equivalent Short Circuit
Input Noise Voltage

1000 N. Shiloh Road, Garland, TX 75042
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Typ Typ

¯e

N

44

TOÐ72 Package

Dimensions in Inches (mm)

nV/√Hz

VDS= 12V, VGS= ØV f = 10 Hz

Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Case

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