Datasheet IDW24G65C5B Datasheet

Power Management & Multimarket

SiC

Silicon Carbide Diode

Final Datasheet

Rev. 2.0, 2015-04-13

5th Generation thinQ!

TM

650V SiC Schottky Diode

IDW24G65C5B

Parameter

Value

Unit

VDC

650

V

QC; VR=400V

2 x 18

nC

EC; VR=400V

2 x 4.1

µJ

IF @ TC < 125°C

2 x 12

A

Pin 1

Pin 2

Pin 3

A C A

Type / ordering Code

Package

Marking

Related links

IDW24G65C5B

PG-TO247-3

D2465B5

www.infineon.com/sic

IDW24G65C5B

5

th

Generation thinQ!™ SiC Schottky Diode

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Schottky Barrier diodes. A combination with a new, more compact design and thin­wafer technology results is a new family of products showing improved efficiency
over all load conditions, resulting from both the improved thermal characteristics
and a lower figure of merit (Qc x Vf).

The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application

requirements in this voltage range.
1

2

3

1 Description

Features

 Revolutionary semiconductor material - Silicon Carbide
 Benchmark switching behavior
 No reverse recovery/ No forward recovery
 Temperature independent switching behavior
 High surge current capability
 Pb-free lead plating; RoHS compliant
 Qualified according to JEDEC1) for target applications
 Breakdown voltage tested at 9 mA
 Optimized for high temperature operation

Benefits

 System efficiency improvement over Si diodes
 System cost / size savings due to reduced cooling requirements
 Enabling higher frequency / increased power density solutions
 Higher system reliability due to lower operating temperatures
 Reduced EMI

Applications

 Switch mode power supply
 Power factor correction
 Solar inverter
 Uninterruptible power supply

Table 1 Key Performance Parameters 4)

2)3)

Table 2 Pin Definition

1) J-STD20 and JESD22

2) All devices tested under avalanche conditions for a time periode of 10ms

3) Per Leg

4) Per Device

Final Datasheet 2 Rev. 2.0, 2015-04-13

5th Generation thinQ!TM SiC Schottky Diode
IDW24G65C5B

Table of contents

Table of Contents

1 Description .......................................................................................................................................... 2

2 Maximum ratings ................................................................................................................................ 4

3 Thermal characteristics ..................................................................................................................... 4

4 Electrical characteristics ................................................................................................................... 5

5 Electrical characteristics diagrams .................................................................................................. 6

6 Simplified Forward Characteristics Model ...................................................................................... 8

7 Package outlines ................................................................................................................................ 9

8 Revision History ............................................................................................................................... 10

Final Datasheet 3 Rev. 2.0, 2015-04-1313

5th Generation thinQ!TM SiC Schottky Diode

Parameter

Symbol

Values

Unit

Note/Test Condition

Min.

Typ.

Max.

Continuous forward current 1)

IF

–

–

12

A

TC < 125°C, D=1

Surge non-repetitive forward current, sine
halfwave 1)

I

F,SM

–

–

71

TC = 25°C, tp=10 ms

–

–

56

TC = 150°C, tp=10 ms

Non-repetitive peak forward current 1)

I

F,max

–

–

505

TC = 25°C, tp=10 µs

i²t value 1)

∫ i²dt

–

–

25.4

A²s

TC = 25°C, tp=10 ms

–

–

15.7

TC = 150°C, tp=10 ms

Repetitive peak reverse voltage

V

RRM

–

–

650

V

Tj = 25°C

Diode dv/dt ruggedness

dv/dt

–

–

100

V/ns

VR=0..480 V

Power dissipation 2)

P

tot

–

–

152

W

TC = 25°C

Operating and storage temperature

Tj;T

stg

-55

–

175

°C Mounting torque

–

50

70

Ncm

M3 screws

Parameter

Symbol

Values

Unit

Note/Test Condition

Min.

Typ.

Max.

Thermal resistance, junction-case 1)

R

thJC

–

1.5

2.0

K/W

Thermal resistance, junction-ambient 1)

R

thJA

–

–

62

leaded

Soldering temperature, wavesoldering
only allowed at leads

T

sold

–

–

260

°C

1.6mm (0.063 in.) from
case for 10 s

IDW24G65C5B

Maximum ratings

2 Maximum ratings

Table 3 Maximum ratings

3 Thermal characteristics

Table 4 Thermal characteristics TO-247-3

1) Per Leg

2) Per Device

Final Datasheet 4 Rev. 2.0, 2015-04-13

5th Generation thinQ!TM SiC Schottky Diode

Parameter

Symbol

Values

Unit

Note/Test Condition

Min.

Typ.

Max.

DC blocking voltage 1)

VDC

650 – –

V

Tj=25°C

Diode forward voltage 1)

VF

–

1.5

1.7

IF= 12 A, Tj=25°C

–

1.8

2.1

IF= 12 A, Tj=150°C

Reverse current 1)

IR

–

0.6

190

µA

VR=650 V, Tj=25°C

–

0.2

68

VR=600 V, Tj=25°C

–

2.4

1350

VR=650 V, Tj=150°C

Parameter

Symbol

Values

Unit

Note/Test Condition

Min.

Typ.

Max.

Total capacitive charge 1)

Qc

–

18

nC

VR=400 V, di/dt=200A/µs,
IF≤I

F,MAX

, Tj=150°C

Total Capacitance 1)

C

–

360

–

pF

VR=1 V, f=1 MHz

–

47

–

VR=300 V, f=1 MHz

–

46

–

VR=600 V, f=1 MHz

IDW24G65C5B

Electrical characteristics

4 Electrical characteristics

Table 5 Static characteristics

Table 6 AC characteristics

1) Per Leg

2) Per Device

Final Datasheet 5 Rev. 2.0, 2015-04-13

5th Generation thinQ!TM SiC Schottky Diode

Power dissipation 1)

Maximal diode forward current 1)

P

tot

=f(TC); R

thJC,max

IF=f(TC); R

thJC,max;Tj

≤175°C; parameter D=duty cycle

Typical forward characteristics 1)

Typical forward characteristics in surge current 1)

IF=f(VF); tp=200 µs; parameter: Tj

IF=f(VF); tp=200 µs; parameter: Tj

0

10

20

30

40

50

60

70

80

25 50 75 100 125 150 175

P

tot

[W]

TC[°C]

0

10

20

30

40

50

60

70

80

90

100

25 50 75 100 125 150 175

I

F

[A]

TC[°C]

0.1

0.3

0.5

0.7

1

0

5

10

15

20

25

0 1 2 3

I

F

[A]

VF[V]

0

20

40

60

80

100

120

0 1 2 3 4 5 6

I

F

[A]

VF[V]

-55°C

175°C

150°C

25°C

100°C

-55°C

25°C

100°C

150°C

175°C

IDW24G65C5B

Electrical characteristics diagrams

5 Electrical characteristics diagrams

Table 7

Table 8

1) Per Leg

2) Per Device

Final Datasheet 6 Rev. 2.0, 2015-04-13

5th Generation thinQ!TM SiC Schottky Diode

Typ. capacitance charge vs. current slope 1)

Typ. Reverse current vs. reverse voltage 1)

QC=f(diF/dt); Tj=150°C; VR=400 V; IF≤I

F,max

IR=f(VR); parameter: Tj

Max. transient thermal impedance 1)

Typ. capacitance vs. reverse voltage 1)

Z

th,jc

=f(tP); parameter: D=tP/T

C=f(VR); Tj=25°C; f=1 MHz

0

2

4

6

8

10

12

14

16

18

20

100 300 500 700 900

Q

C

[nC]

dIF/dt [A/µs]

1.E-9

1.E-8

1.E-7

1.E-6

1.E-5

100 200 300 400 500 600

I

R

[A]

VR[V]

0.01

0.1

1

1.E-06 1.E-03 1.E+00

Z

th,jc

[K/W]

tp[s]

0.5

0.2

0.1

0.05

0.02

0.01
single pulse

0

50

100

150

200

250

300

350

400

450

500

0 1 10 100 1000

C [pF]

VR[V]

-55°C

175°C

150°C

25°C

100°C

IDW24G65C5B

Electrical characteristics diagrams

Table 9

Table 10

1) Per Leg

2) Per Device

Final Datasheet 7 Rev. 2.0, 2015-04-13

5th Generation thinQ!TM SiC Schottky Diode

Typ. capacitance stored energy 1)

EC=f(VR)

Equivalent forward current curve 1)

Mathematical Equation

VF=f(IF)

Tj in °C; -55°C < Tj < 175°C; IF < 24 A

0

2

4

6

8

10

12

0 200 400 600

E

C

[µJ]

VR[V]

I

F

[A]

VF[V]

1/R

diff

V

th

 

 

 

 





0.03910.07110.071

V 04.1001.0

4-

2

6-

jjjDIFF

jjTH

TTTR

TTV

FDIFFTHF

IRVV 

IDW24G65C5B

Electrical characteristics diagrams

Table 11

6 Simplified Forward Characteristics Model

Table 12

1) Per Leg

2) Per Device

Final Datasheet 8 Rev. 2.0, 2015-04-13

5th Generation thinQ!TM SiC Schottky Diode
IDW24G65C5B

Package outlines

Figure 1 Outlines TO-247, dimensions in mm/inches

1) Per Leg

2) Per Device

Final Datasheet 9 Rev. 2.0, 2015-04-13

5th Generation thinQ!TM SiC Schottky Diode

5th Generation thinQ!TM SiC Schottky Diode

Revision History: 2015-04-13, Rev. 2.0

Previous Revision:

Revision

Subjects (major changes since last version)

2.0

Release of the final datasheet.

IDW24G65C5B

Revision History

7 Revision History

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Edition 2015-04-13
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.

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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.

Final Datasheet 10 Rev. 2.0, 2015-04-13

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