• Equivalent to AMD’s Am29841-46 bipolar registers in
pinout/function, speed and output drive over full temperature and voltage supply extremes
• IDT54/74FCT841A equivalent to FAST speed
• IDT54/74FCT841B 25% faster than FAST
• IDT54/74FCT841C 40% faster than FAST
• Buffered common latch enable, clear and preset inputs
•I
OL = 48mA (commercial) and 32mA (military)
• Clamp diodes on all inputs for ringing suppression
• CMOS power levels (1mW typ. static)
• TTL input and output level compatible
• CMOS output level compatible
• Substantially lower input current levels than AMD’s
bipolar Am29800 series (5µA max.)
• Product available in Radiation Tolerant and Radiation
Enhanced versions
• Military product compliant to MIL-STD-883, Class B
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION:
The IDT54/74FCT800 series is built using an advanced
dual metal CMOS technology.
The IDT54/74FCT840 series bus interface latches are
designed to eliminate the extra packages required to buffer
existing latches and provide extra data width for wider address/
data paths or buses carrying parity. The IDT54/74FCT841 is
a buffered, 10-bit wide version of the popular ‘373 function.
All of the IDT54/74FCT800 high-performance interface
family are designed for high-capacitance load drive capability,
while providing low-capacitance bus loading at both inputs
and outputs. All inputs have clamp diodes and all outputs are
designed for low-capacitance bus loading in the high-impedance state.
PRE
CLR
LE
OE
D0
D
LE
CLR
DN
P
Q
0
Y
D
LE
CLR
P
Q
N
Y
2607 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
FAST is a trademark of National Semiconductor Co.
MILITARY AND COMMERCIAL TEMPERATURE RANGESAPRIL 1994
1. H = HIGH, L = LOW, X = Don’t Care, NC = No Change,
Z = High Impedance
7.222
Page 3
IDT54/74FCT841A/B/C
HIGH-PERFORMANCE CMOS BUS INTERFACE LATCHESMILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS
(1)
SymbolRatingCommercialMilitaryUnit
(2)
VTERM
Terminal Voltage
–0.5 to +7.0–0.5 to +7.0V
with Respect to
GND
(3)
VTERM
Terminal Voltage
–0.5 to VCC–0.5 to VCCV
with Respect to
GND
TAOperating
0 to +70–55 to +125°C
Temperature
TBIASTemperature
–55 to +125–65 to +135°C
Under Bias
TSTGStorage
–55 to +125–65 to +150°C
Temperature
PTPower Dissipation0.50.5W
IOUTDC Output
120120mA
Current
NOTE:2607 tbl 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage
may exceed V
2. Input and V
3. Outputs and I/O terminals only.
CC by +0.5V unless otherwise noted.
CC terminals only.
CAPACITANCE (TA = +25°C, f = 1.0MHz)
SymbolParameter
C
IN
Input
Capacitance
C
OUT
Output
Capacitance
NOTE:2607 tbl 04
1. This parameter is measured at characterization but not tested.
(1)
ConditionsTyp.Max. Unit
VIN = 0V610pF
V
OUT
= 0V812pF
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V; VHC = VCC – 0.2V
Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%
SymbolParameterTest Conditions
(1)
Min. Typ.
VIHInput HIGH LevelGuaranteed Logic HIGH Level2.0——V
VILInput LOW LevelGuaranteed Logic LOW Level——0.8V
II HInput HIGH CurrentVCC = Max.VI = VCC—— 5µA
VI = 2.7V——5
II LInput LOW CurrentVI = 0.5V——–5
VI = GND——–5
IOZHOff State (High Impedance)VCC = Max.VO = VCC——10µA
Output CurrentVO = 2.7V——10
IOZLVO = 0.5V——–10
VO = GND——–10
VIKClamp Diode VoltageVCC = Min., IN = –18mA—–0.7–1.2V
IOSShort Circuit CurrentVCC = Max.
(3)
, VO = GND–75–120—mA
VOHOutput HIGH VoltageVCC = 3V, VIN = VLC or VHC, IOH = –32µAVHCVCC—V