Datasheet IDT74FCT827ATEB, IDT74FCT827ATE, IDT74FCT827ATDB, IDT74FCT827ATD, IDT74FCT827DTD Datasheet (Integrated Device Technology)

IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES

FAST CMOS 10-BIT
BUFFERS

Integrated Device Technology, Inc.

FEATURES:

• Common features:

– Low input and output leakage ≤1µA (max.)
– CMOS power levels
– True TTL input and output compatibility

– VOH = 3.3V (typ.)

– VOL = 0.3V (typ.)
– Meets or exceeds JEDEC standard 18 specifications
– Product available in Radiation Tolerant and Radiation

Enhanced versions
– Military product compliant to MIL-STD-883, Class B

and DESC listed (dual marked)
– Available in DIP, SOIC, SSOP, QSOP, CERPACK

and LCC packages

• Features for FCT827T:

– A, B, C and D speed grades
– High drive outputs (-15mA I

• Features for FCT2827T:

– A, B and C speed grades
– Resistor outputs (-15mA IOH, 12mA IOL Com.)

(-12mA IOH, 12mA IOL Mil.)

– Reduced system switching noise

OH, 48mA IOL)

IDT54/74FCT827AT/BT/CT/DT

IDT54/74FCT2827AT/BT/CT

DESCRIPTION:

The FCT827T is built using an advanced dual metal CMOS

technology.

The FCT827T/FCT2827T 10-bit bus drivers provide high­performance bus interface buffering for wide data/address
paths or buses carrying parity. The 10-bit buffers have NAND­ed output enables for maximum control flexibility.

All of the FCT827T high-performance interface family are
designed for high-capacitance load drive capability, while
providing low-capacitance bus loading at both inputs and
outputs. All inputs have clamp diodes to ground and all outputs
are designed for low-capacitance bus loading in high-imped­ance state.

The FCT2827T has balanced output drive with current
limiting resistors. This offers low ground bounce, minimal
undershoot and controlled output fall times-reducing the need
for external series terminating resistors. FCT2827T parts are
plug-in replacements for FCT827T parts.

FUNCTIONAL BLOCK DIAGRAM

Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9

D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 OE1 OE2

2573 drw 01

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

MILITARY AND COMMERCIAL TEMPERATURE RANGES AUGUST 1995

1995 Integrated Device Technology, Inc. 6.22 DSC-4217/5

6.22 1
1

IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES

PIN CONFIGURATIONS

1

D

4

1213

8

D

32

1

0

NC

D

OE

1

L28-1

9

D

NC

GND

LCC

TOP VIEW

CC

V

2

OE

1

0

Y

Y

262728

1817161514

Y9Y

25
24
23
22
21
20
19

8

Y
Y
Y
NC
Y
Y
Y

2
3
4

5
6
7

2573 drw 03

24
23
22
21
20
19
18
17
16
15
14
13

VCC1
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
OE2GND

OE1

D0
D1
D2
D3
D4
D5
D6
D7
D
D9

2
3

P24-1

4

D24-1

5

SO24-2

6

SO24-7

7

SO24-8

&

8

E24-1

9
10

8

11
12

DIP/SOIC/SSOP/QSOP/CERPACK

TOP VIEW

2573 drw 02

INDEX

D
D3
D

NC

D
D
D

2

5
6

4

7
8

5

9

6

10

7

11

PIN DESCRIPTION

Names I/O Description

OE

I I When both are LOW the outputs are

enabled. When either one or both are
HIGH the outputs are High Z.

DI I 10-bit data input.
YI O 10-bit data output.

2573 tbl 01

(1)

Symbol Rating Commercial Military Unit

(2)

VTERM

VTERM

TA Operating

TBIAS Temperature

TSTG Storage

PT Power Dissipation 0.5 0.5 W
IOUT DC Output

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT­INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability. No terminal voltage may exceed
V

2. Input and V

3. Outputs and I/O terminals only.

Terminal Voltage

–0.5 to +7.0 –0.5 to +7.0 V
with Respect to
GND

(3)

Terminal Voltage
with Respect to
GND

–0.5 to

V

0 to +70 –55 to +125 °C

Temperature

–55 to +125 –65 to +135 °C
Under Bias

–55 to +125 –65 to +150 °C
Temperature

–60 to +120 –60 to +120 mA
Current

CC by +0.5V unless otherwise noted.

CC terminals only.

CC +0.5

–0.5 to

VCC +0.5

V

2573 lnk 03

FUNCTION TABLE

(1)

Inputs Output

OE

1

OE

OE

L

L
H
X

NOTE: 2573 tbl 02

1. H = HIGH, L = LOW, X = Don’t Care, Z = High Impedance

2 DI YI Function

OE

L

L
X
H

L
H
X
X

L

Transparent

H

Z

Three-State

Z

CAPACITANCE (TA = +25°C, f = 1.0MHz)ABSOLUTE MAXIMUM RATINGS

Symbol Parameter

CIN Input

Capacitance

COUT Output

Capacitance

NOTE:

1. This parameter is measured at characterization but not tested.

(1)

Conditions Typ. Max. Unit

VIN = 0V 6 10 pF

VOUT = 0V 8 12 pF

2573 lnk 04

6.22 2

IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES

DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE

Following Conditions Apply Unless Otherwise Specified:
Commercial: T

Symbol Parameter Test Conditions

A = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC

(1)

VIH Input HIGH Level Guaranteed Logic HIGH Level 2.0 — — V
VIL Input LOW Level Guaranteed Logic LOW Level — — 0.8 V
II H Input HIGH Current
II L Input LOW Current

(4)

(4)

VI = 0.5V — — ±1

VCC = Max. VI = 2.7V — — ±1 µA

IOZH High Impedance Output Current VCC = Max. VO = 2.7V — — ±1 µA

(4)

(4)

VO = 0.5V — — ±1

VCC = Max., VI = VCC (Max.) — — ±1 µA

IOZL (3-State Output pins)
II Input HIGH Current
VIK Clamp Diode Voltage VCC = Min., IIN = –18mA — –0.7 –1.2 V
VH Input Hysteresis — — 200 — mV
ICC Quiescent Power Supply Current VCC = Max., VIN = GND or VCC — 0.01 1 mA

= 5.0V ± 10%

Min. Typ.

(2)

Max. Unit

2573 lnk 05

OUTPUT DRIVE CHARACTERISTICS FOR FCT827T

Symbol Parameter Test Conditions

V

OH

Output HIGH Voltage VCC = Min.

IN

= V

IH

V

or V

IOH = –6mA MIL.

IL

OH

= –8mA COM'L.

I
IOH = –12mA MIL.

OH

= –15mA COM'L.

I

V

OL

I

OS

Output LOW Voltage VCC = Min.

IN

= V

IH

or V

V

IL

Short Circuit Current VCC = Max., VO = GND

I

OL

= 32mA MIL.

OL

= 48mA COM'L.

I

(3)

(1)

Min. Typ.

2.4 3.3 — V

2.0 3.0 — V

— 0.3 0.5 V

–60 –120 –225 mA

(2)

Max. Unit

2573 lnk 06

OUTPUT DRIVE CHARACTERISTICS FOR FCT2827T

Symbol Parameter Test Conditions

I

ODL

I

ODH

V

OH

V

OL

NOTES:

1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.

2. Typical values are at Vcc = 5.0V, +25°C ambient.

3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.

4. The test limit for this parameter is ±5µA at T

Output LOW Current VCC = 5V, V
Output HIGH Current VCC = 5V, V
Output HIGH Voltage VCC = Min.

IN

= V

IH

V

or V

Output LOW Voltage VCC = Min.

IN

= V

IH

V

A = –55°C.

or V

IN

= V

IH or VIL, VOUT

IN

= V

IH

IL

IL

or V

IL,VOUT

(1)

(3)

= 1.5V

(3)

= 1.5V

IOH = –12mA MIL.

OH

= –15mA COM'L.

I

Min. Typ.

16 48 — mA

–16 –48 — mA

2.4 3.3 — V

IOL = 12mA — 0.3 0.50 V

(2)

Max. Unit

2573 lnk 07

6.22 3

IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES

POWER SUPPLY CHARACTERISTICS

Symbol Parameter Test Conditions

∆ICC Quiescent Power Supply Current

TTL Inputs HIGH

ICCD Dynamic Power Supply Current

(4)

VCC = Max.

IN = 3.4V

V
VCC = Max.

(3)

Outputs Open

OE

1 = OE2 = GND

(1)

VIN = VCC

IN = GND

V

Min. Typ.

— 0.5 2.0 mA

FCT827T — 0.15 0.25 mA/

FCT2827T — 0.06 0.12
One Input Toggling
50% Duty Cycle

IC Total Power Supply Current

(6)

VCC = Max. VIN = VCC FCT827T — 1.5 3.5 mA
Outputs Open

VIN = GND FCT2827T — 0.6 2.2
fi = 10MHz
50% Duty Cycle VIN = 3.4V FCT827T — 1.8 4.5

OE

1 = OE2 = GND

VIN = GND FCT2827T — 0.9 3.2
One Bit Toggling
VCC = Max. VIN = VCC FCT827T — 3.0 6.0

Outputs Open

VIN = GND FCT2827T — 1.2 3.4
fi = 2.5MHz
50% Duty Cycle VIN = 3.4V FCT827T — 5.0 14.0

OE

1 = OE2 = GND

VIN = GND FCT2827T — 3.2 11.4
Eight Bits Toggling

NOTES:

1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.

2. Typical values are at V

3. Per TTL driven input (V

4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.

5. Values for these conditions are examples of the I

C = IQUIESCENT + IINPUTS + IDYNAMIC

6. I
IC = ICC + ∆ICC DHNT + ICCD (fCP/2 + fiNi)

CC = Quiescent Current

I
∆I

CC = Power Supply Current for a TTL High Input (VIN = 3.4V)

H = Duty Cycle for TTL Inputs High

D

T = Number of TTL Inputs at DH

N
ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f

CP = Clock Frequency for Register Devices (Zero for Non-Register Devices)
i = Input Frequency

f

i = Number of Inputs at fi

N
All currents are in milliamps and all frequencies are in megahertz.

CC = 5.0V, +25°C ambient.

IN = 3.4V). All other inputs at VCC or GND.

CC formula. These limits are guaranteed but not tested.

(2)

Max. Unit

MHz

(5)
(5)

(5)

(5)

2573 tbl 08

6.22 4

IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES

SWITCHING CHARACTERISTICS OVER OPERATING RANGE

FCT827AT/FCT2827AT FCT827BT/FCT2827BT

Com'l. Mil. Com'l. Mil.

Symbol Parameter Condition

tPLH
tPHL

Propagation Delay
D

I to YI

CL = 50pF
R

L = 500Ω

CL = 300pF

(1)

(3)

RL = 500Ω

tPZH

Output Enable Time

OE

tPZL

I to YI

CL = 50pF
R

L = 500Ω

CL = 300pF

(3)

RL = 500Ω

tPHZ

Output Disable Time

OE

tPLZ

I to YI

CL = 5pF
RL = 500Ω

(3)

CL = 50pF
R

L = 500Ω

Symbol Parameter Condition

tPLH
tPHL

Propagation Delay
D

I to YI

CL = 50pF
R

L = 500Ω

CL = 300pF

(1)

(3)

RL = 500Ω

tPZH

Output Enable Time

OE

tPZL

I to YI

CL = 50pF
R

L = 500Ω

CL = 300pF

(3)

RL = 500Ω

tPHZ

Output Disable Time

OE

tPLZ

I to YI

CL = 5pF
RL = 500Ω

(3)

CL = 50pF
R

L = 500Ω

NOTES: 2573 tbl 10

1. See test circuit and waveforms.

2. Minimum limits are guaranteed but not tested on Propagation Delays.

3. These conditions are guaranteed but not tested.

Min.

(2)

Max. Min.

(2)

Max. Min.

(2)

Max. Min.

(2)

Max. Unit

1.5 8.0 1.5 9.0 1.5 5.0 1.5 6.5 ns

1.5 15.0 1.5 17.0 1.5 13.0 1.5 14.0

1.5 12.0 1.5 13.0 1.5 8.0 1.5 9.0 ns

1.5 23.0 1.5 25.0 1.5 15.0 1.5 16.0

1.5 9.0 1.5 9.0 1.5 6.0 1.5 7.0 ns

1.5 10.0 1.5 10.0 1.5 7.0 1.5 8.0

2573 tbl 09

FCT827CT/FCT2827CT FCT827DT

Com'l. Mil. Com'l. Mil.

Min.

(2)

Max. Min.

(2)

Max. Min.

(2)

Max. Min.

(2)

Max. Unit

1.5 4.4 1.5 5.0 1.5 3.8 — — ns

1.5 10.0 1.5 11.0 1.5 7.5 — —

1.5 7.0 1.5 8.0 1.5 5.0 — — ns

1.5 14.0 1.5 15.0 1.5 9.0 — —

1.5 5.7 1.5 6.7 1.5 4.3 — — ns

1.5 6.0 1.5 7.0 1.5 4.3 — —

6.22 5

IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES

TEST CIRCUITS AND WAVEFORMS
TEST CIRCUITS FOR ALL OUTPUTS

SWITCH POSITION

Test

Open Drain
Disable Low

Enable Low

All Other Tests

Generator.

Pulse

Generator

V

CC

500

V

V

IN

OUT

D.U.T.

50pF

T

R

C

500

L

Ω

Ω

2573 drw 04

7.0V

DEFINITIONS:

C

L= Load capacitance: includes jig and probe capacitance.
T = Termination resistance: should be equal to ZOUT of the Pulse

R

SET-UP, HOLD AND RELEASE TIMES PULSE WIDTH

DATA

INPUT

TIMING

INPUT

ASYNCHRONOUS CONTROL

PRESET

CLEAR

ETC.

SYNCHRONOUS CONTROL

PRESET

CLEAR

CLOCK ENABLE

ETC.

t

t

REM

H

t

H

t

SU

t

SU

3V

1.5V
0V

3V

1.5V
0V

3V

1.5V

0V

3V

1.5V
0V

2573 drw 05

LOW-HIGH-LOW

PULSE

HIGH-LOW-HIGH

PULSE

Switch

Closed

Open

2573 lnk 11

1.5V

t

W

1.5V

2573 drw 06

SAME PHASE

INPUT TRANSITION

OUTPUT

OPPOSITE PHASE

INPUT TRANSITION

t

PLH

t

PLH

t

t

PHL

PHL

3V

1.5V
0V

OH

V

1.5V

V

OL

3V

1.5V
0V

2573 drw 07

ENABLE AND DISABLE TIMESPROPAGATION DELAY

ENABLE DISABLE

3V

CONTROL

INPUT

t

t

PHZ

PLZ

F ≤ 2.5ns; tR ≤ 2.5ns

t

PZL

OUTPUT

NORMALLY

OUTPUT

NORMALLY

HIGH

NOTES:

1. Diagram shown for input Control Enable-LOW and input Control Disable­HIGH

2. Pulse Generator for All Pulses: Rate ≤ 1.0MHz; t

LOW

SWITCH
CLOSED

t

PZH

SWITCH
OPEN

3.5V

1.5V

1.5V
0V

0.3V

0.3V

1.5V
0V

3.5V

V

OL

V

OH

0V

2573 drw 08

6.22 6

IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES

ORDERING INFORMATION

IDT XX FCT

Temp. Range

X

Family

XX

Device TypeXPackage

X

Process

Blank
B

P
D
E
L
SO
PY
Q

827AT

Commercial
MIL-STD-883, Class B

Plastic DIP
CERDIP
CERPACK
Leadless Chip Carrier
Small Outline IC
Shrink Small Outline Package
Quarter-size Small Outline Package

Non-Inverting 10-Bit Buffer
827BT
827CT
827DT

Blank2High Drive

Balanced Drive

54
74

–55°C to +125°C
0°C to +70°C

2573 drw 09

6.22 7