Datasheet IDT54FCT543, IDT74FCT543, IDT54FCT543A, IDT74FCT543A, IDT54FCT543C Datasheet (Integrated Device Technology)

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查询IDT54FCT543AD供应商
Integrated Device Technology, Inc.
FAST CMOS OCTAL LATCHED TRANSCEIVER
IDT54/74FCT543 IDT54/74FCT543A IDT54/74FCT543C
FEATURES:
IDT54/74FCT543A 25% faster than FAST
• IDT54/74FCT543C 40% faster than FAST
• Equivalent to FAST output drive over full temperature and voltage supply extremes
•IOL = 64mA (commercial), 48mA (military)
• Separate controls for data flow in each direction
• Back-to-back latches for storage
• CMOS power levels (1mW typ. static)
• Substantially lower input current levels than FAST (5µA max.)
• TTL input and output level compatible
• CMOS output level compatible
• Product available in Radiation Tolerant and Radiation Enhanced versions
• Military product compliant to MIL-STD-883, Class B
FUNCTIONAL BLOCK DIAGRAMS
Q
D
LE
DESCRIPTION:
The IDT54/74FCT543/A/C is a non-inverting octal trans­ceiver built using an advanced dual metal CMOS technology. These devices contain two sets of eight D-type latches with separate input and output controls for each set. For data flow from A to B, for example, the A-to-B Enable (
be LOW in order to enter data from A0–A7 or to take data from B0–B7, as indicated in the Function Table. With a LOW signal on the A-to-B Latch Enable ( the A-to-B latches transparent; a subsequent LOW-to-HIGH transition of the
LEAB
signal puts the A latches in the storage mode and their outputs no longer change with the A inputs. With
CEAB
and
OEAB
both LOW, the 3-state B output buffers are active and reflect the data present at the output of the A latches. Control of data from B to A is similar, but uses the
CEBA, LEBA
and
DETAIL A
OEBA
inputs.
B0
CEAB
LEAB
) input must
CEAB
LOW,
) input makes
D
A0
A1 A2 A3 A4 A5 A6 A7
OEBA
CEBA
LEBA
The IDT logo is a registered trademark of Integrated Device Technology, Inc. FAST is a registered trademark of National Semiconductor Co.
DETAIL A x 7
Q
LE
B1 B2 B3 B4 B5
B6 B7
OEAB
CEAB
LEAB
2614 drw 01
MILITARY AND COMMERCIAL TEMPERATURE RANGES MAY 1992
1992 Integrated Device Technology, Inc. 7.17 DSC-4602/3
1
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IDT54/74FCT543/A/C FAST CMOS OCTAL LATCHED TRANSCEIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS IDT54/74FCT861 10-BIT TRANSCEIVERS
LEBA
OEBA
A A1 A2 A3 A4 A5 A A7
CEAB
GND
1 2 3
0
P24-1,
4
D24-1,
5
SO24-2
6 7
E24-1
8 9
6
10 11 12
DIP/SOIC/CERPACK
TOP VIEW
24
Vcc
23
CEBA
22 21 20 19
&
18 17 16 15 14 13
0
B B1 B2 B3 B4 B5 B6 B7
LEAB OEAB
PIN DESCRIPTION
Pin Names Description
OEAB OEBA CEAB CEBA LEAB LEBA
0–A7 A-to-B Data Inputs or B-to-A 3-State Outputs
A
0–B7 B-to-A Data Inputs or A-to-B 3-State Outputs
B
A-to-B Output Enable Input (Active LOW) B-to-A Output Enable Input (Active LOW) A-to-B Enable Input (Active LOW) B-to-A Enable Input (Active LOW) A-to-B Latch Enable Input (Active LOW) B-to-A Latch Enable Input (Active LOW)
LOGIC SYMBOL
2614 tbl 02
INDEX
A1 A2 A3
NC
A4 A5 A6
A0LEBA
OEBA
NC
Vcc
432128 27 26
5 6 7 8 9 10 11
L28-1
12 13 14 15 16 17 18
A7
GND
CEAB
NC
CEBA
LEAB
OEAB
B0
25 24 23 22 21 20 19
7
B
1
B B2 B3 NC B4 B5 B6
2614 drw 02
LCC
TOP VIEW
FUNCTION TABLE
(1,2)
For A-to-B (Symmetric with B-to-A)
Latch Output
Inputs Status Buffers
CEAB
CEAB
H Storing — — H High Z
NOTES: 2614 tbl 01
1. * Before
H = HIGH Voltage Level L = LOW Voltage Level — = Don’t Care or Irrelevant
2. A-to-B data flow shown; B-to-A flow control is the same, except using
CEBA, LEBA
LEAB
LEAB
OEAB
OEAB
A-to-B B
0–B7
H Storing High Z
L L L Transparent Current A Inputs L H L Storing Previous* A Inputs
LEAB
LOW-to-HIGH Transition
and
OEBA
.
LEAB CEAB CEBA LEBA A
0
A1 A2 A3 A4 A5 A6 A7 OEBA
B0 B1 B2 B3 B4 B5 B6 B7
OEAB
2614 drw 03
7.17 2
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IDT54/74FCT543/A/C FAST CMOS OCTAL LATCHED TRANSCEIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Rating Commercial Military Unit
(2)
V
TERM
Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V with Respect to GND
(3)
V
TERM
Terminal Voltage –0.5 to VCC –0.5 to VCC V with Respect to GND
T
A Operating 0 to +70 –55 to +125 °C
Temperature
T
BIAS Temperature –55 to +125 –65 to +135 °C
Under Bias
T
STG Storage –55 to +125 –65 to +150 °C
Temperature
P
T Power Dissipation 0.5 0.5 W
I
OUT DC Output Current 120 120 mA
NOTES: 2614 tbl 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed V
2. Inputs and V
3. Outputs and I/O terminals only.
CC by +0.5V unless otherwise noted.
CC terminals only.
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol Parameter
IN Input Capacitance VIN = 0V 6 10 pF
C
I/O I/O Capacitance VOUT = 0V 8 12 pF
C
NOTE: 2614 tbl 04
1. This parameter is guaranteed by characterization data and not tested.
(1)
Conditions Typ. Max. Unit
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V, VHC = VCC – 0.2V Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%
Symbol Parameter Test Conditions
IH Input HIGH Level Guaranteed Logic HIGH Level 2.0 V
V
IL Input LOW Level Guaranteed Logic LOW Level 0.8 V
V
IH Input HIGH Current VCC = Max. VI = VCC ——5µA
I
(Except I/O pins) V
(1)
I = 2.7V 5
Min. Typ.
IIL Input LOW Current VI = 0.5V ——–5
(Except I/O pins) V
IH Input HIGH Current VCC = Max. VI = VCC ——15µA
I
(I/O pins Only) V
I = GND –5
I = 2.7V 15
IIL Input LOW Current VI = 0.5V –15
(I/O pins Only) V
IK Clamp Diode Voltage VCC = Min., IN = –18mA –0.7 –1.2 V
V
OS Short Circuit Current V CC = Max.
I
OH Output HIGH Voltage VCC = 3V, VIN = VLC or VHC, IOH = –32µAVHC VCC —V
V
CC = Min. IOH = –300µAVHC
V
IN = VIH or VIL IOH = –12mA MIL. 2.4 4.3
V
OL Output LOW Voltage VCC = 3V, VIN = VLC or VHC, IOL = 300µA GND VLC V
V
CC = Min. IOL = 300µA GND VLC
V
(3)
, VO = GND –60 –120 mA
VIN = VIH or VIL IOL = 48mA MIL.
NOTES: 2614 tbl 05
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. This parameter is guaranteed but not tested.
5. These are maximum IOL values per output, for 8 outputs turned on simultaneously. Total maximum IOL (all outputs) is 512mA for commercial and 384mA for military. Derate I
CC = 5.0V, +25°C ambient and maximum loading.
OL for number of outputs exceeding 8 turned on simultaneously.
I = GND –15
(4)
OH = –15mA COM’L. 2.4 4.3
I
OL = 64mA COM’L.
I
(5)
0.3 0.55
(5)
0.3 0.55
(2)
Max. Unit
VCC
(4)
(4)
(4)
(4)
(4)
µA
µA
7.17 3
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IDT54/74FCT543/A/C FAST CMOS OCTAL LATCHED TRANSCEIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS VLC = 0.2V; VHC = VCC – 0.2V
(3)
(1)
Min. Typ.
0.5 2.0 mA
Symbol Parameter Test Conditions
CC Quiescent Power VCC = Max. 0.2 1.5 mA
I
Supply Current V
IN VHC; VIN VLC
ICC Quiescent Power Supply VCC = Max., VIN = 3.4V
Current TTL Inputs HIGH
I
CCD Dynamic Power Supply Current
(4)
VCC = Max., Outputs Open VIN VHC 0.15 0.25 mA/
CEAB
and
OEAB
CEBA
= V
= GND V
CC
IN VLC MHz
One Input Toggling 50% Duty Cycle
I
C Total Power Supply Current
(6)
VCC = Max., Outputs Open VIN VHC 1.7 4.0 mA f
CP = 10MHz (
LEAB
)VIN VLC
50% Duty Cycle (FCT)
CEAB
and
OEAB
= GND
CEBA
= V
CC
One Bit Toggling VIN = 3.4V 2.2 6.0 at f
i = 5MHz VIN = GND
50% Duty Cycle V
CC = Max., Outputs Open VIN VHC 7.0 12.8
fCP = 10MHz (
LEAB
)VIN VLC
50% Duty Cycle (FCT)
CEAB
and
OEAB
= GND
CEBA
= V
CC
Eight Bits Toggling VIN = 3.4V 9.2 21.8 at fi = 5MHz VIN = GND 50% Duty Cycle
(2)
Max. Unit
(5)
(5)
NOTES: 2614 tbl 06
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
3. Per TTL driven input (V
4. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.
5. Values for these conditions are examples of the I
C = IQUIESCENT +IINPUTS + IDYNAMIC
6. I IC = ICC + ICC DHNT + ICCD(fCP/2 + fiNi)
CC = Quiescent Current
I
CC = Power Supply Current for a TTL High Input (VIN = 3.4V)
I
H = Duty Cycle for TTL Inputs High
D N
T = Number of TTL Inputs at DH
ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
CP = Clock Frequency for Register Devices (Zero for Non-Register Devices)
f
i = Input Frequency
f
i = Number of Inputs at fi
N All currents are in milliamps and all frequencies are in megahertz.
CC = 5.0V, +25°C ambient.
IN = 3.4V); all other inputs at VCC or GND.
CC formula. These limits are guaranteed but not tested.
7.17 4
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IDT54/74FCT543/A/C FAST CMOS OCTAL LATCHED TRANSCEIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
IDT54/74FCT543 IDT54/74FCT543A IDT54/74FCT543C
Com’l. Mil. Com’l. Mil. Com’l. Mil.
(1)
(2)
Min.
Symbol Parameter Condition
t
PLH Propagation Delay CL = 50pF 2.5 8.5 2.5 10.0 2.5 6.5 2.5 7.5 2.5 5.3 2.5 6.1 ns
t
PHL Transparent Mode RL = 500
n to Bn or Bn to An
A
Max. Min.
tPLH Propagation Delay 2.5 12.5 2.5 14.0 2.5 8.0 2.5 9.0 2.5 7.0 2.5 8.0 ns t
PHL
LEBA
to An,
LEAB
to Bn
tPZH Output Enable Time 2.0 12.0 2.0 14.0 2.0 9.0 2.0 10.0 2.0 8.0 2.0 9.0 ns t
PZL
OEBA CEBA
or or
OEAB CEAB
to An or Bn
to An or Bn
tPHZ Output Disable Time 2.0 9.0 2.0 13.0 2.0 7.5 2.0 8.5 2.0 6.5 2.0 7.5 ns t
PLZ
OEBA CEBA
or or
OEAB CEAB
to An or Bn
to An or Bn
tSU Set-up Time, HIGH or LOW 3.0 3.0 2.0 2.0 2.0 2.0 ns
A
n or Bn to
H Hold Time, HIGH or LOW 2.0 2.0 2.0 2.0 2.0 2.0 ns
t
A
n or Bn to
W
t
LEBA
or
LEBA
or
LEAB
LEBA
or
LEAB
LEAB
Pulse Width 5.0 5.0 5.0 5.0 5.0 5.0 ns
LOW
(2)
Max. Min.
(2)
Max. Min.
(2)
Max. Min.
(2)
Max. Min.
(2)
Max. Unit
NOTES: 2513 tbl 07
1. See test circuits and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
7.17 5
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IDT54/74FCT543/A/C FAST CMOS OCTAL LATCHED TRANSCEIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES
TEST CIRCUITS AND WAVEFORMS TEST CIRCUITS FOR ALL OUTPUTS
VCC
Pulse
Generator
VIN
D.U.T.
RT
VOUT
50pF
CL
7.0V
500
500
SWITCH POSITION
Test Switch
Open Drain
Disable Low Closed
Enable Low
All Other Tests Open
DEFINITIONS: 2614 tbl 08
CL = Load capacitance: includes jig and probe capacitance.
T = Termination resistance: should be equal to ZOUT of the Pulse
R
Generator.
SET-UP, HOLD AND RELEASE TIMES PULSE WIDTH
DATA
INPUT
TIMING
INPUT
ASYNCHRONOUS CONTROL
PRESET
CLEAR
ETC.
SYNCHRONOUS CONTROL
PRESET
CLOCK ENABLE
CLEAR
ETC.
t
tSU
SU
t
REM
t
t
H
H
3V
1.5V 0V
3V
1.5V 0V
3V
1.5V 0V
3V
1.5V 0V
LOW-HIGH-LOW
HIGH-LOW-HIGH
PULSE
PULSE
1.5V
t
W
1.5V
SAME PHASE
INPUT TRANSITION
OUTPUT
OPPOSITE PHASE
INPUT TRANSITION
t
t
PLH
PLH
t
t
PHL
PHL
3V
1.5V 0V
V
OH
1.5V V
OL
3V
1.5V 0V
ENABLE AND DISABLE TIMESPROPAGATION DELAY
ENABLE DISABLE
3V
CONTROL
INPUT
OUTPUT
NORMALLY
LOW
OUTPUT
NORMALLY
HIGH
t
PZL
SWITCH CLOSED
t
PZH
SWITCH OPEN
3.5V
1.5V
1.5V 0V
t
PHZ
t
PLZ
NOTES 2614 drw 05
1. Diagram shown for input Control Enable-LOW and input Control Disable-HIGH.
2. Pulse Generator for All Pulses: Rate 1.0 MHz; Z t
R 2.5ns.
1.5V 0V
3.5V
0.3V
V
OL
V
OH
0.3V 0V
O 50; tF 2.5ns;
7.17 6
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IDT54/74FCT543/A/C FAST CMOS OCTAL LATCHED TRANSCEIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES
ORDERING INFORMATION
XXIDT FCT
Temperature
Range
XXXX
Device
Type
X
PackageXProcess
Blank B
P D L SO E
543 543A 543C
54 74
Commercial MIL-STD-883, Class B
Plastic DIP CERDIP Leadless Chip Carrier Small Outline IC CERPACK
Octal Registered Transceiver Fast Octal Registered Transceiver Super Fast Octal Registered Transceiver
-55°C to +125°C 0
° to +70°C
2614 drw 04
7.17 7
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