• Pin and functionally compatible with IDT720x family
• Status Flags: Empty, Half-Full, Full
• Retransmit capability
• High-performance CMOS technology
• Military product compliant to MIL-STD-883, Class B
• Industrial temperature range (-40oC to +85oC) is available, tested to military electrical specifications
FUNCTIONAL BLOCK DIAGRAM
W
WRITE
CONTROL
DESCRIPTION:
The IDT7207 is a monolithic dual-port memory buffer with
internal pointers that load and empty data on a first-in/first-out
basis. The device uses Full and Empty flags to prevent data
overflow and underflow and expansion logic to allow for
unlimited expansion capability in both word size and depth.
Data is toggled in and out of the device through the use of
the Write (W) and Read (R) pins.
The devices 9-bit width provides a bit for a control or parity
at the user’s option. It also features a Retransmit (RT) capability that allows the read pointer to be reset to its initial position
when RT is pulsed LOW. A Half-Full Flag is available in the
single device and width expansion modes.
The IDT7207 is fabricated using IDT’s high-speed CMOS
technology. It is designed for applications requiring asynchronous and simultaneous read/writes in multiprocessing, rate
buffering, and other applications.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B.
DATA INPUTS
(D–D
0
)
8
RAM ARRAY
32,768 x 9
DATA OUTPUTS
(Q–Q
0
8
)
EFFF
READ
POINTER
RS
RESET
LOGIC
FL/RT
XO/HF
3140 drw 01
R
XI
The IDT logo is a registered trademark of Integrated Device Techology, Inc.
READ
CONTROL
EXPANSION
WRITE
POINTER
THREESTATE
BUFFERS
FLAG
LOGIC
LOGIC
MILITARY AND COMMERCIAL TEMPERATURE RANGESDECEMBER 1996
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
5.051
Page 2
IDT7207 CMOS ASYNCHRONOUS FIFO
32,768 x 9MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
1
W
2
D
8
3
D
3
4
2
D
5
D
1
6
D0
7
XI
8
FF
9
0
Q
10
Q1
11
Q
2
12
Q3
13
Q
8
GND
14
TOP VIEW
ABSOLUTE MAXIMUM RATINGS
SymbolRatingCommercialMilitaryUnit
V
TERMTerminal–0.5 to + 7.0–0.5 to +7.0V
Voltage with
Respect to
GND
T
AOperating0 to +70–55 to +125° C
Temperature
T
BIASTemperature –55 to +125–65 to +135° C
Under Bias
T
STGStorage–55 to + 125–65 to +155° C
Temperature
I
OUTDC Output5050mA
Current
NOTE:3140 tbl 01
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
P28-1
D28-1
DIP
28
Vcc
27
D
4
26
D
5
25
6
D
24
D
7
23
FL/RT
22
RS
21
EF
20
XO/HF
19
Q
7
18
Q6
17
5
Q
16
Q
4
15
R
3140 drw 02
(1)
INDEX
2
D
D1
D0
XI
FF
Q
0
Q1
NC
Q
2
5
6
7
8
9
10
11
12
13
D3D8
432
J32-1
L32-1
141516
3
8
Q
Q
NC
W
1
&
171819
NC
GND
Vcc
32
R
D4
D
30
31
29
D
6
28
D7
27
NC
26
FL/RT
25
RS
24
EF
23
XO/HF
22
Q
7
21
Q6
20
5
4
Q
Q
3140 drw 03
5
PLCC/LCC
TOP VIEW
RECOMMENDED DC OPERATING
CONDITIONS
SymbolParameterMin.Typ.Max.Unit
V
CCMMilitary Supply4.55.05.5V
Voltage
CCCCommercial Supply4.55.05.5V
V
Voltage
GNDSupply Voltage000V
(1)
V
IH
V
IH
V
IL
NOTE:3140 tbl 02
1. 1.5V undershoots are allowed for 10ns once per cycle.
Input High Voltage2.0——V
Commercial
(1)
Input High Voltage2.2——V
Military
(1)
Input Low Voltage——0.8V
Commercial and
Military
DC ELECTRICAL CHARACTERISTICS FOR THE 7207
(Commercial: VCC = 5.0V±10%, TA = 0°C to +70°C; Military: VCC = 5.0V±10%, TA = –55°C to +125°C)
IDT7207IDT7207
CommercialMilitary
t
A = 15, 20, 25, 35, 50 nstA = 20, 30, 50 ns
SymbolParameterMin.Typ.Max.Min.Typ.Max.Unit
(1)
LI
I
(2)
LO
I
OHOutput Logic “1” Voltage IOH = –2mA2.4——2.4——V
V
OLOutput Logic “0” Voltage IOL = 8mA——0.4——0.4V
V
(3)
CC1
I
(3)
CC2
I
CC3(L)
I
NOTES:3140 tbl 04
1. Measurements with 0.4 ≤ VIN≤ VCC.
2. R ≥ V
CC measurements are made with outputs open (only capacitive loading).
3. I
4. Tested at f = 20MHz.
Input Leakage Current (Any Input)–1—1–1—1µA
Output Leakage Current–10—10–10—10µA
Active Power Supply Current——120
(4)
——150
(4)
Standby Current (R=W=RS=FL/RT=VIH)——12— —25mA
(3)
Power Down Current (All Input = VCC - 0.2V)——8——12mA
IH, 0.4 ≤ VOUT≤ VCC.
5.052
mA
Page 3
IDT7207 CMOS ASYNCHRONOUS FIFO
32,768 x 9MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS
(1)
(Commercial: VCC = 5V ± 10%, TA = 0°C to +70°C; Military: VCC = 5V ± 10%, TA = –55°C to +125°C)
Com'l Com'l & Mil. Com'lMilitaryCom'l Com'l & Mil.
7207L157207L20 7207L257207L307207L35 7207L50
SymbolParametersMin.Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
fSShift Frequency—40—33.3—28.5—25—22.2—15MHz
tRCRead Cycle Time25—30—35—40—45—65—ns
tAAccess Time—15—20—25—30—35—50ns
tRRRead Recovery Time10—10—10—10—10—15—ns
tRPWRead Pulse Width
tRLZRead LOW to Data Bus LOW
tWLZWrite HIGH to Data Bus Low-Z
tDVData Valid from Read HIGH5—5—5—5—5—5—ns
tRHZRead HIGH to Data Bus High-Z
tWCWrite Cycle Time25—30—35—40—45—65—ns
tWPWWrite Pulse Width
tWRWrite Recovery Time10—10—10—10—10—15—ns
tDSData Set-up Time11—12—15—18—18—30—ns
tDHData Hold Time0—0—0—0—0—5—ns
tRSCReset Cycle Time25—30—35—40—45—65—ns
tRSReset Pulse Width
tRSSReset Set-up Time
tRTRReset Recovery Time10—10—10—10—10—15—ns
tRTCRetransmit Cycle Time25—30—35—40—45—65—ns
tRTRetransmit Pulse Width
tRTSRetransmit Set-up Time
tRSRRetransmit Recovery Time10—10—10—10—10—15—ns
tEFLReset to EF LOW—25—30—35—40—45—65ns
tHFH, tFFH Reset to HF and FF HIGH—25—30—35—40—45—65ns
tRTFRetransmit LOW to Flags Valid—25—30—35—40—45—65ns
tREFRead LOW to EF LOW—15—20—25—30—30—45ns
tRFFRead HIGH to FF HIGH—15—20—25—30—30—45ns
tRPERead Pulse Width after EF HIGH15—20—25—30—35—50—ns
tWEFWrite HIGH to EF HIGH—15—20—25—30—30—45ns
tWFFWrite LOW to FF LOW—15—20—25—30—30—45ns
tWHFWrite LOW to HF Flag LOW—25—30—35—40—45—65ns
tRHFRead HIGH to HF Flag HIGH—25—30—35—40—45—65ns
tWPFWrite Pulse Width after FF HIGH15—20—25—30—35—50—ns
tXOLRead/Write LOW to XO LOW—15—20—25—30—35—50ns
tXOHRead/Write HIGH to XO HIGH—15—20—25—30—35—50ns
tXIXI Pulse Width
tXIRXI Recovery Time10—10—10—10—10—10—ns
tXISXI Set-up Time10—10—10—10—15—15—ns
(2)
(2)
(2)
(3)
(2)
(3)
(2)
15—20—25—30—35—50—ns
(3)
5 — 5 — 5—5—5 — 10—ns
(3, 4)
5 — 5 — 5—5—10—15—ns
(3)
—15—15—18—20—20—30ns
15—20—25—30—35—50—ns
15—20—25—30—35—50—ns
15—20—25—30—35—50—ns
15—20—25—30—35—50—ns
15—20—25—30—35—50—ns
15—20—25—30—35—50—ns
NOTES:3140 tbl 05
1. Timings referenced as in AC Test Conditions.
2. Pulse widths less than minimum are not allowed.
3. Values guaranteed by design, not currently tested.
4. Only applies to read data flow-through mode.
5.053
Page 4
IDT7207 CMOS ASYNCHRONOUS FIFO
32,768 x 9MILITARY AND COMMERCIAL TEMPERATURE RANGES
DATA IN (D0–D8) — Data inputs for 9-bit wide data.
Controls:
RESET (
(RS) input is taken to a LOW state. During reset, both internal
read and write pointers are set to the first location. A reset is
required after power-up before a write operation can take place.
Both the Read Enable (
be in the HIGH state during the window shown in Figure 2
(i.e. tRSS before the rising edge of
change until tRSR after the rising edge of
WRITE ENABLE (
edge of this input if the Full Flag (FF) is not set. Data set-up and
hold times must be adhered-to, with respect to the rising edge
of the Write Enable (W). Data is stored in the RAM array
sequentially and independently of any on-going read operation.
After half of the memory is filled, and at the falling edge of the
next write operation, the Half-Full Flag (HF) will be set to LOW,
and will remain set until the difference between the write pointer
and read pointer is less-than or equal to one-half of the total
memory of the device. The Half-Full Flag (HF) is reset by the
rising edge of the read operation.
To prevent data overflow, the Full Flag (FF) will go LOW on
the falling edge of the last write signal, which inhibits further write
operations. Upon the completion of a valid read operation, the
Full Flag (FF) will go HIGH after t
to begin. When the FIFO is full, the internal write pointer is
blocked from W, so external changes in W will not affect the FIFO
when it is full.
RSRS) — Reset is accomplished whenever the Reset
RR) and Write Enable (
WW) inputs must
RSRS) and should not
RSRS.
WW) — A write cycle is initiated on the falling
RFF, allowing a new valid write
5V
1.1KΩ
D.U.T.
680Ω
*Includes jig and scope capacitances.
READ ENABLE (
OR EQUIVALENT CIRCUIT
Figure 1. Output Load
RR) — A read cycle is initiated on the falling
30pF*
3140 drw 04
edge of the Read Enable (R), provided the Empty Flag (EF) is not
set. The data is accessed on a First-In/First-Out basis, independent of any ongoing write operations. After Read Enable (R)
goes HIGH, the Data Outputs (Q0 through Q8) will return to a
high-impedance condition until the next Read operation. When
all the data has been read from the FIFO, the Empty Flag (EF)
will go LOW, allowing the “final” read cycle but inhibiting further
read operations, with the data outputs remaining in a highimpedance state. Once a valid write operation has been accomplished, the Empty Flag (EF) will go HIGH after t
WEF and a valid
Read can then begin. When the FIFO is empty, the internal read
pointer is blocked from R so external changes will not affect the
FIFO when it is empty.
FIRST LOAD/RETRANSMIT (
FLFL/
RTRT) — This is a dual-
purpose input. In the Depth Expansion Mode, this pin is
grounded to indicate that it is the first device loaded (see
Operating Modes). The Single Device Mode is initiated by
grounding the Expansion In (XI).
The IDT7207 can be made to retransmit data when the
Retransmit Enable Control (RT) input is pulsed LOW. A retransmit operation will set the internal read pointer to the first location
and will not affect the write pointer. The status of the Flags will
change depending on the relative locations of the read and write
pointers. Read Enable (R) and Write Enable (W) must be in the
HIGH state during retransmit. This feature is useful when less
than 32,768 writes are performed between resets. The retransmit feature is not compatible with the Depth Expansion Mode.
EXPANSION IN (
XIXI) — This input is a dual-purpose pin.
Expansion In (XI) is grounded to indicate an operation in the
single device mode. Expansion In (XI) is connected to Expansion Out (XO) of the previous device in the Depth Expansion or
Daisy-Chain Mode.
5.054
Page 5
IDT7207 CMOS ASYNCHRONOUS FIFO
32,768 x 9MILITARY AND COMMERCIAL TEMPERATURE RANGES
Outputs:
FULL FLAG (
further write operations, when the device is full. If the read
pointer is not moved after Reset (RS), the Full Flag (FF) will go
LOW after 32,768 writes.
EMPTY FLAG (
inhibiting further read operations, when the read pointer is equal
to the write pointer, indicating that the device is empty.
EXPANSION OUT/HALF-FULL FLAG (
dual-purpose output. In the single device mode, when Expansion In (XI) is grounded, this output acts as an indication of a halffull memory.
After half of the memory is filled, and at the falling edge of the
next write operation, the Half-Full Flag (HF) will be set to LOW
RS
W
FFFF) — The Full Flag (FF) will go LOW, inhibiting
EFEF) — The Empty Flag (EF) will go LOW,
XOXO/
HFHF) — This is a
tRS
and will remain set until the difference between the write pointer
and read pointer is less than or equal to one half of the total
memory of the device. The Half-Full Flag (HF) is then reset by
the rising edge of the read operation.
In the Depth Expansion Mode, Expansion In (XI) is connected to Expansion Out (XO) of the previous device. This
output acts as a signal to the next device in the Daisy Chain by
providing a pulse to the next device when the previous device
reaches the last location of memory. There will be an XO pulse
when the Write pointer reaches the last location of memory, and
an additional XO pulse when the Read pointer reaches the last
location of memory.
DATA OUTPUTS (Q0-Q8) — Q0-Q8 are data outputs for 9-
bit wide data. These outputs are in a high-impedance condition
whenever Read (R) is in a HIGH state.
tRSC
t
RSS
t
RSR
R
EF
HF, FF
NOTE:
1. W and R = V
R
Q0–Q
8
IH around the rising edge of
t
t
RLZ
t
RSS
t
EFL
t
HFH
, t
FFH
3140 drw 05
RS
.
Figure 2. Reset
tRC
OUT
t RR
t
DV
VALID
t WR
A
DATA
t
WC
tWPW
tA
tRPW
OUT
t
RHZ
VALIDDATA
D
0 –D8
W
t
DS
DATA
Figure 3. Asynchronous Write and Read Operation
IN
t
DH
VALID
5.055
DATA IN
VALID
3140 drw 06
Page 6
IDT7207 CMOS ASYNCHRONOUS FIFO
32,768 x 9MILITARY AND COMMERCIAL TEMPERATURE RANGES
LAST WRITE
IGNORED
WRITE
FIRST READ
R
W
t
WFF
t
RFF
FF
3140 drw 07
Figure 4. Full FlagTiming From Last Write to First Read
LAST READ
IGNORED
READ
FIRST WRITE
W
R
DATA
HF, EF, FF
EF
OUT
RT
W,R
t
REF
t
A
VALID
Figure 5. Empty Flag Timing From Last Read to First Write
t
RTC
t
RT
t
RTS
RTF
t
WEF
t
3171 drw 08
RTR
FLAG VALID
3140 drw 09
NOTE:
1. EF, FF and HF
may change status during Retransmit, but flags will be valid at tRTC.
Figure 6. Retransmit
5.056
Page 7
IDT7207 CMOS ASYNCHRONOUS FIFO
32,768 x 9MILITARY AND COMMERCIAL TEMPERATURE RANGES
W
t
WEF
EF
t
RPE
R
3140 drw 10
Figure 7. Minimum Timing for an Empty Flag Coincident Read Pulse.
R
t
RFF
FF
t
WPF
W
HF
3140 drw 11
Figure 8. Minimum Timing for an Full Flag Coincident Write Pulse.
W
t
RHF
R
tWHF
HALF-FULL OR LESSMORE THAN HALF-FULL
Figure 9. Half-Full Flag Timing
HALF-FULL OR LESS
3140 drw 12
WRITE TO
LAST PHYSICAL
W
LOCATION
XO
READ FROM
R
t
XOL
t
XOH
Figure 10. Expansion Out
5.057
LAST PHYSICAL
LOCATION
t
XOL
t
XOH
3140 drw 13
Page 8
IDT7207 CMOS ASYNCHRONOUS FIFO
32,768 x 9MILITARY AND COMMERCIAL TEMPERATURE RANGES
t
XI
XI
t
XIS
W
R
WRITE TO
FIRST PHYSICAL
LOCATION
t
Figure 11. Expansion In
OPERATING MODES:
Care must be taken to assure that the appropriate flag is
monitored by each system (i.e. FF is monitored on the device
where W is used; EF is monitored on the device where R is
used). For additional information, refer to Tech Note 8:
ating FIFOs on Full and Empty Boundary Conditions
Tech Note 6:
Designing with FIFOs.
Single Device Mode
A single IDT7207 may be used when the application
requirements are for 32,768 words or less. The IDT7207 is
in a Single Device Configuration when the Expansion In (XI)
control input is grounded (see Figure 12).
Depth Expansion
The IDT7207 can easily be adapted to applications when
the requirements are for greater than 32,768 words. Figure 14
demonstrates Depth Expansion using three IDT7207s. Any
depth can be attained by adding additional IDT7207s. The
IDT7207 operates in the Depth Expansion mode when the
following conditions are met:
1. The first device must be designated by grounding the First
Load (FL) control input.
2. All other devices must have FL in the HIGH state.
3. The Expansion Out (XO) pin of each device must be tied to
the Expansion In (XI) pin of the next device. See Figure 14.
4. External logic is needed to generate a composite Full Flag
(FF) and Empty Flag (EF). This requires the ORing of all
EF
s and ORing of all FFs (i.e. all must be set to generate the
correct composite FF or EF). See Figure 14.
5. The Retransmit (RT) function and Half-Full Flag (HF) are
not available in the Depth Expansion Mode.
Oper-
and
XIR
t XIS
READ FROM
FIRST PHYSICAL
LOCATION
corresponding input control signals of multiple devices. Status flags (EF, FF and HF) can be detected from any one device.
Figure 13 demonstrates an 18-bit word width by using two
IDT7207s. Any word width can be attained by adding additional IDT7207s (Figure 13).
Bidirectional Operation
Applications which require data buffering between two
systems (each system capable of Read and Write operations)
can be achieved by pairing IDT7207s as shown in Figure 16.
Both Depth Expansion and Width Expansion may be used in
this mode.
Data Flow-Through
Two types of flow-through modes are permitted, a read
flow-through and write flow-through mode. For the read flowthrough mode (Figure 17), the FIFO permits a reading of a
single word after writing one word of data into an empty FIFO.
The data is enabled on the bus in (tWEF + tA) ns after the rising
edge of W, called the first write edge, and it remains on the bus
until the R line is raised from LOW-to-HIGH, after which the
bus would go into a three-state mode after tRHZ ns. The EF line
would have a pulse showing temporary deassertion and then
would be asserted.
In the write flow-through mode (Figure 18), the FIFO
permits the writing of a single word of data immediately after
reading one word of data from a full FIFO. The R line causes
the FF to be deasserted but the W line being LOW causes it to
be asserted again in anticipation of a new data word. On the
rising edge of W, the new word is loaded in the FIFO. The
line must be toggled when FF is not asserted to write new data
in the FIFO and to increment the write pointer.
3140 drw 14
W
For additional information, refer to Tech Note 9:
Cascading
FIFOs or FIFO Modules.
USAGE MODES:
Width Expansion
Word width may be increased simply by connecting the
Compound Expansion
The two expansion techniques described above can be
applied together in a straightforward manner to achieve large
FIFO arrays (see Figure 15).
5.058
Page 9
IDT7207 CMOS ASYNCHRONOUS FIFO
32,768 x 9MILITARY AND COMMERCIAL TEMPERATURE RANGES
DATA (D)
IN
WRITE (W)
FULL FLAG (FF)
(HALF–FULL FLAG)
WRITE (W)
9
DATA IN (D)
FULL FLAG (FF)
RESET (RS)
(HF)
IDT
7207
READ (R)
9
DATA OUT (Q)
EMPTY FLAG (EF)
RETRANSMIT (RT)
EXPANSION IN (XI)
Figure 12. Block Diagram of 32,768 x 9 FIFO Used in Single Device Mode
HFHF
9918
IDT
7207
IDT
7207
3140 drw 15
READ (R)
EMPTY FLAG (EF)
RESET (RS)
9
9
RETRANSMIT (RT)
XIXI
18
OUT
DATA
NOTE:
1. Flag detection is accomplished by monitoring the FF, EF and HF signals on either (any) device used in the width expansion configuration.
Do not connect any output signals together.
Figure 13. Block Diagram of 32,768 x 18 FIFO Memory Used in Width Expansion Mode
(Q)
3140 drw 16
5.059
Page 10
IDT7207 CMOS ASYNCHRONOUS FIFO
32,768 x 9MILITARY AND COMMERCIAL TEMPERATURE RANGES