High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Description:
The IDT70V3599/89 is a high-speed 128/64K x 36 bit synchronous
Dual-Port RAM. The memory array utilizes Dual-Port memory cells to
allow simultaneous access of any address from both ports. Registers on
control, data, and address inputs provide minimal setup and hold
times. The timing latitude provided by this approach allows systems
to be designed with very short cycle times. With an input data register, the
IDT70V3599/89 has been optimized for applications having unidirectional
or bidirectional data flow in bursts. An automatic power down feature,
controlled by CE
0 and CE1, permits the on-chip circuitry of each port to
enter a very low standby power mode.
The 70V3599/89 can support an operating voltage of either 3.3V or
2.5V on one or both ports, controllable by the OPT pins. The power supply
for the core of the device (V
DD) remains at 3.3V.
A2
B2
C2
I/O
D2
E2
I/O
F2
I/O
G2
H2
I/O
J2
K2
L2
M2
N2
P2
R2
I/O
T2
U2
I/O
IO
I/O
I/O
I/O
I/O
18L
V
SS
19R
V
SS
22R
23R
V
SS
26R
V
DD
V
SS
V
SS
32L
33L
35L
(1,2,3,4,5)
A3
V
SS
B3
I/O
18R
C3
V
DDQR
D3
I/O
21L
E3
V
DDQR
F3
I/O
24L
G3
I/O
H3
V
DDQR
J3
V
SS
K3
I/O
27R
L3
V
DDQR
28L
M3
29L
I/O
30R
N3
I/O
31R
P3
V
DDQR
R3
I/O
34R
T3
34L
V
DDQL
U3
PL/
FT
25L
A8
A7
A
8L
A
12L
B7
B8
A
9L
BE
2L
C8
C7
BE
10L
3L
D8
BE
0L
7L
A
D7
A
70V3599/89BF
BF-208
208-Pin fpBGA
Top View
P8
P7
A
8R
A
12R
R7
R8
BE
A
T7
A
U7
2R
9R
T8
BE
3R
10R
U8
A
7R
BE
0R
A9
A10
BE
1L
V
DD
B9
B10
CE
0L
V
SS
C10
C9
V
SS
CE
1L
D9
D10
V
DD
OE
L
(6)
(7)
P9
P10
BE
1R
V
DD
R10
R9
CE
0R
V
SS
T9
T10
CE
1R
V
SS
U10
U9
OE
V
R
DD
L
A5
NC
B5
NC
C5
NC
D5
A
15L
P5
TRST
R5
NC
T5
NC
U5
A
15R
A6
(1)
A
16L
B6
A
13L
C6
A
14L
D6
A
11L
P6
(1)
A
16R
R6
A
13R
T6
A
14R
U6
A
11R
A4
TDO
B4
TDI
C4
PL/
FT
D4
I/O
20L
E4
I/O
21R
F4
V
SS
G4
I/O
24R
H4
I/O
25R
J4
V
SS
K4
V
SS
L4
I/O
27L
M4
V
SS
N4
I/O
30L
P4
I/O
35R
R4
TCK
T4
TMS
U4
R
NC
A11
CLK
B11
ADS
C11
R/W
D11
REPEAT
P11
CLK
R11
ADS
T11
R/W
L
L
L
L
R
R
R
A12
CNTEN
B12
A
5L
C12
A
6L
D12
A
3L
P12
CNTEN
R12
A
5R
T12
A
6R
U12
A
3R
A14
A13
A
L
B13
C13
D13
P13
R
R13
T13
U13
0L
A
4L
B14
A
1L
V
SS
C14
A
2L
V
DD
D14
I/O
17R
V
DD
E14
I/O
12L
F14
V
SS
G14
I/O
9L
H14
V
DD
J14
V
SS
K14
I/O
7R
L14
I/O
6R
M14
V
SS
N14
I/O
3R
P14
I/O
A
A
A
A
2L
4R
R14
1R
V
SS
T14
2R
V
SS
U14
0R
V
DD
Pin Configuration
06/28/0 2
A1
IO
19L
B1
I/O
20R
C1
V
DDQL
D1
I/O
22L
E1
I/O
23L
F1
V
DDQL
G1
I/O
26L
H1
V
DD
J1
V
DDQL
K1
I/O
28R
L1
I/O
29R
M1
V
DDQL
N1
I/O
31L
P1
I/O
32R
R1
V
SS
T1
I/O
33R
U1
V
SS
NOTES:
1. A
16 is a NC for IDT70V3589.
DD pins must be connected to 3.3V power supply.
2. All V
DDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is
3. All V
4. All V
IL (0V).
set to V
SS pins must be connected to ground supply.
5. Package body is approximately 15mm x 15mm x 1.4mm with 0.8mm ball pitch.
6. This package code is used to reference the package diagram.
7. This text does not indicate orientation of the actual part-marking.
6.42
2
A15
OPT
B15
V
DDQR
C15
I/O
D15
V
E15
I/O
F15
I/O
G15
V
DDQL
H15
IO
J15
V
K15
V
L15
I/O
M15
I/O
N15
V
P15
I/O
R15
V
T15
I/O
U15
OPT
16R
DDQL
13R
12R
9R
DD
DDQL
7L
6L
DDQL
3L
DDQL
0R
L
R
A16
I/O
B16
I/O
C16
I/O
D16
I/O
E16
F16
I/O
G16
I/O
H16
J16
K16
I/O
L16
M16
N16
I/O
P16
R16
T16
U16
I/O
I/O
I/O
17L
16L
15L
14L
V
SS
11L
10L
V
SS
V
SS
V
SS
4R
V
SS
V
SS
A17
V
SS
B17
I/O
15R
C17
V
SS
D17
I/O
14R
E17
I/O
13L
F17
V
DDQR
G17
I/O
11R
H17
I/O
10R
J17
V
DDQR
K17
8R
V
SS
L17
I/O
8L
M17
V
DDQR
5R
N17
I/O
P17
I/O
4L
R17
1R
V
DDQR
T17
I/O
2R
U17
I/O
1L
0L
5617 drw 02c
5L
,
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Pin Configuration
(1,2,3,4,5)
(con't.)
06/2 8/02
A1
NC
B1
I/O
18L
C1
I/O
18R
D1
I/O
20R
E1
I/O
21R
F1
I/O
23L
G1
I/O
24R
H1
I/O
26L
J1
I/O
27L
K1
I/O
29R
L1
I/O
30L
M1
I/O
32R
N1
I/O
33L
P1
I/O
35R
R1
I/O
35L
T1
NC
A3
A2
NC
TDI
B3
B2
TDO
NC
C2
C3
V
19L
19R
21L
22R
24L
25R
28R
29L
31R
32L
34R
34L
SS
D3
I/O
20L
E3
I/O
22L
F3
I/O
23R
G3
I/O
25L
H3
I/O
26R
J3
I/O
27R
K3
I/O
28L
L3
I/O
30R
M3
I/O
31L
N3
I/O
33R
P3
TMSP4A
I/O
D2
I/O
E2
I/O
F2
I/O
G2
I/O
H2
I/O
J2
I/O
K2
I/O
L2
I/O
M2
I/O
N2
I/O
P2
I/O
R2
NCR3TRSTR4NC
T2
TCKT3NC
A4
NC
B4
NC
C4
A
16L
D4
PIPE/
E4
V
DDQL
F4
V
DDQL
G4
V
DDQR
H4
V
DDQR
J4
V
DDQL
K4
V
DDQL
L4
V
DDQR
M4
V
DDQR
N4
PIPE/
16R
T4
NC
FT
FT
70V3599/89BC
BC-256
(6)
256-Pin BGA
2L
3L
DDQR
V
SS
SS
SS
SS
SS
V
SS
V
SS
V
SS
DDQL
1R
3R
2R
(7)
A12
B12
C12
D12
V
E12
F12
G12
H12
J12
K12
L12
M12
N12
V
P12
R12
T12
A
A
A
DDQR
V
V
DD
V
SS
V
SS
V
SS
V
SS
V
DD
V
DD
DDQL
A
A
A
DD
6R
4R
A13
A14
A
2L
A
1L
A
3L
DD
DDQL
DDQR
DDQL
DDQL
DD
3R
1R
2R
B14
V
C14
OPT
D14
I/O
E14
I/O
F14
I/O
G14
I/O
H14
I/O
J14
I/O
K14
I/O
L14
I/O
M14
I/O
N14
I/O
P14
I/O
R14
OPT
T14
A
0L
DD
L
15R
13L
12R
10L
9R
8R
6R
5L
3R
2L
0L
R
0R
5L
A
B13
4L
C13
6L
D13
V
E13
V
DDQR
F13
V
DDQR
G13
V
H13
V
DDQL
J13
V
DDQR
K13
V
L13
V
M13
V
N13
V
P13
A
R13
A
T13
5R
A
A16
A15
NC
B15
B16
I/O
17L
C16
C15
I/O
17R
D15
D16
I/O
15L
E16
E15
I/O
14L
F15
F16
I/O
13R
G15
G16
I/O
I/O
11L
H16
H15
I/O
IO
9L
J15
J16
I/O
7R
K15
K16
I/O
6L
L15
L16
I/O
4R
M16
M15
I/O
3L
N16
N15
I/O
1R
P15
P16
I/O
0R
R16
R15
NC
T15NCT16
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
NC
NC
NC
NC
16L
16R
14R
12L
11R
10R
8L
7L
5R
4L
2R
1L
,
A10
OE
B10
R/W
C10
CLK
D10
V
DDQL
E10
V
F10
V
G10
V
H10
V
J10
V
K10
V
L10
V
M10
V
N10
V
DDQR
P10
CLK
R10
R/W
T10
OE
A11
CNTEN
L
L
B11
REPEA T
L
L
C11
ADS
L
L
D11
V
DDQR
E11
SS
V
DD
F11
SS
V
SS
G11
SS
V
SS
H11
V
SS
SS
J11
SS
V
SS
K11
SS
V
SS
L11
V
SS
SS
M11
SS
V
DD
N11
V
DDQL
P11
R
ADS
R
R11
REPEAT
R
R
T11
CNTEN
R
R
A9
CE
1L
B9
CE
0L
C9
1L
BE
0L
D9
V
DDQL
E9
V
SS
F9
V
SS
G9
V
SS
H9
V
SS
J9
V
SS
K9
V
SS
L9
V
SS
M9
V
SS
N9
V
DDQR
P9
BE
0R
R9
CE
0R
T9
CE
1R
Top View
A7
B7
C7
D7
V
E7
F7
G7
H7
J7
K7
L7
M7
N7
V
P7
R7
T7
A
8L
A
9L
A
7L
DDQR
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
DDQL
A
7R
A
9R
A
8R
A8
BE
B8
BE
C8
BE
D8
V
E8
F8
V
G8
V
H8
V
J8
V
K8
L8
M8
N8
V
P8
BE
R8
BE
T8
BE
A6
A5
A
11L
A
14L
B6
B5
A
12L
A
15L
C6
C5
(1)
L
R
(1)
D5
V
E5
F5
G5
H5
J5
K5
L5
M5
N5
V
P5
R5
T5
A
DDQL
V
V
V
V
V
V
V
V
DDQR
A
13R
A
A
13L
DD
DD
SS
SS
SS
SS
DD
DD
15R
14R
D6
V
E6
F6
G6
H6
J6
K6
L6
M6
N6
V
P6
R6
T6
A
10L
DDQL
V
V
V
V
V
V
V
V
DDQR
A
10R
A
12R
A
11R
DD
SS
SS
SS
SS
SS
SS
DD
NOTES:
1. A
16 is a NC for IDT70V3589.
DD pins must be connected to 3.3V power supply.
2. All V
DDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is
3. All V
4. All V
IL (0V).
set to V
SS pins must be connected to ground supply.
5. Package body is approximately 17mm x 17mm x 1.4mm, with 1.0mm ball-pitch.
6. This package code is used to reference the package diagram.
7. This text does not indicate orientation of the actual part-marking.
6.42
3
5617 drw 02d
,
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
R
R
Q
8
1
D
D
O
/
V
I
6
7
0
0
2
2
5
4
5
5
L
R
5
Q
3
D
O
D
/
I
V
(1,2,3,4,5)
L
L
T
8
F
I
1
/
S
S
L
D
O
/
I
V
P
T
4
5
2
3
0
0
0
0
2
2
2
2
9
8
7
6
5
5
5
5
L
R
K
S
5
T
3
C
M
F
T
/
O
T
/
L
I
P
(con't.)
)
1
(
L
L
L
L
L
L
O
6
5
C
C
C
1
D
T
1
0
2
1
A
A
N
N
N
6
7
8
9
0
9
9
9
9
0
2
1
1
1
1
L
4
3
2
1
0
L
L
1
1
1
A
A
A
5
3
4
9
9
9
1
1
1
L
1
1
9
8
7
A
A
A
A
A
0
1
2
8
9
9
9
9
8
8
1
1
1
1
1
L
L
3
E
B
7
8
1
L
L
L
L
1
0
2
1
0
E
E
E
E
E
B
B
B
C
C
2
3
4
5
6
8
8
8
8
8
1
1
1
1
1
70V3599/89DR
DR-208
208-Pin PQFP
Top View
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
6
6
6
6
6
)
T
1
C
C
C
(
S
R
N
N
N
6
R
1
T
A
6
6
6
6
6
R
R
R
R
R
5
4
3
2
1
1
1
1
1
1
A
A
A
A
A
7
7
7
7
7
R
R
R
R
R
0
9
8
7
3
1
E
A
A
A
A
B
7
7
7
7
7
R
R
R
R
R
2
1
0
1
0
E
E
E
E
E
B
B
B
C
C
L
K
D
D
S
S
L
D
D
S
S
V
V
V
V
C
9
0
1
7
8
7
8
8
7
7
1
1
1
1
1
(6)
(7)
4
3
2
1
0
8
8
8
8
8
S
S
D
D
R
S
S
D
D
K
V
V
V
V
L
C
L
L
T
A
N
L
E
E
L
L
T
P
S
L
L
W
E
/
D
O
R
A
6
4
5
7
7
7
1
1
1
7
6
5
8
8
8
R
R
R
E
S
W
/
D
O
R
A
L
N
E
6
5
4
C
R
A
A
A
3
1
2
0
9
7
7
7
7
6
1
1
1
1
1
2
1
0
9
8
9
9
9
8
8
R
R
R
R
R
6
5
4
T
N
A
A
A
A
E
E
T
P
N
E
C
R
D
L
3
A
8
6
1
3
9
R
3
A
D
L
L
L
2
1
0
D
D
A
A
A
V
V
3
4
5
6
7
6
6
6
6
6
1
1
1
1
1
8
7
6
5
4
9
9
9
9
9
S
D
R
R
R
2
1
0
S
D
A
A
A
V
V
R
L
R
L
Q
7
7
T
1
1
D
S
S
V
2
6
1
9
9
S
S
V
S
P
D
S
O
O
/
/
O
I
I
V
V
9
0
1
7
8
5
6
6
5
5
1
1
1
1
1
I/O
16L
156
I/O
16R
155
I/O
15L
154
I/O
15R
153
V
SS
152
V
DDQL
151
I/O
14L
150
I/O
14R
149
I/O
13L
148
I/O
13R
147
V
SS
146
V
DDQR
145
I/O
12L
144
I/O
12R
143
I/O
11L
142
I/O
11R
141
V
SS
140
V
DDQL
139
I/O
10L
138
I/O
10R
137
I/O
9L
136
I/O
9R
135
V
SS
134
V
DDQR
133
V
DD
132
V
DD
131
V
SS
130
V
SS
129
V
SS
128
V
DDQL
127
I/O
8R
126
I/O
8L
125
I/O
7R
124
I/O
7L
123
V
SS
122
V
DDQR
121
I/O
6R
120
I/O
6L
119
I/O
5R
118
I/O
5L
117
V
SS
116
V
DDQL
115
I/O
4R
114
I/O
4L
113
I/O
3R
112
I/O
3L
111
V
SS
110
V
DDQR
109
I/O
2R
108
I/O
2L
107
I/O
1R
106
I/O
1L
105
4
3
2
1
0
0
0
0
0
0
1
1
1
1
1
L
R
0
T
O
P
/
I
O
5617 drw 02a
L
S
R
0
Q
S
D
V
O
/
D
I
V
,
Pin Configuration
S
S
06/2 8/02
V
8
0
2
1
I/O
19L
2
I/O
19R
3
I/O
20L
4
I/O
20R
5
V
DDQL
6
V
SS
7
I/O
21L
8
I/O
21R
9
I/O
22L
10
I/O
22R
I/O
I/O
I/O
I/O
V
I/O
I/O
I/O
I/O
V
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
V
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
DDQR
V
DDQL
V
DDQR
V
V
V
V
V
DDQL
V
DDQR
V
DDQL
V
DDQR
V
11
12
SS
13
23L
14
23R
15
24L
24R
16
17
18
SS
25L
19
25R
20
26L
21
26R
22
23
SS
24
DD
25
DD
26
SS
27
SS
28
29
SS
30
27R
31
27L
32
28R
33
28L
34
35
SS
36
29R
37
29L
38
30R
39
30L
40
41
SS
42
43
31R
44
31L
32R
45
46
32L
47
48
SS
49
33R
50
33L
51
34R
52
34L
3
5
S
S
V
V
V
V
V
NOTES:
1. A16 is a NC for IDT70V3589.
2. All VDD pins must be connected to 3.3V power supply.
DDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is set to VIL (0V).
3. All V
SS pins must be connected to ground supply.
4. All V
5. Package body is approximately 28mm x 28mm x 3.5mm.
6. This package code is used to reference the package diagram.
7. This text does not indicate orientation of the actual part-marking.
6.42
4
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Pin Names
Left PortRight PortNames
0L
,
CE
CE
R/W
L
L
OE
0L
- A
16 L
A
0L
- I/O
I/O
L
CLK
L
PL/FT
L
ADS
CNTEN
L
REPEAT
BE0L - BE
V
OPT
1L
(1)
35L
L
3L
DD Q L
CE
0R
,
CE
1R
R/ W
R
OE
R
A0R - A
I/O0R - I/O
CLK
PL/FT
ADS
CNTEN
REPEAT
BE0R - BE
L
V
DD
V
SS
(1 )
16R
35R
R
R
R
R
R
3R
V
DDQR
OPT
R
TDITest Data Inp ut
TDOTest Data Output
TCKTest Logic Clock (10MHz)
TMSTest Mode Select
TRST
Chip Enables
Read/ Write Enable
Output Enable
Address
Data Input/Outp ut
Clock
Pipeline/Flow-Through
Address Strobe Enable
Counter Enable
Counter Repeat
Byte Enables (9-bit bytes)
Po wer (I/O Bus) (3.3V o r 2.5V)
Op tio n for selecti ng V
Po wer (3.3V)
Ground (0V)
Re se t (Initialize TAP Co ntrol le r)
(5)
(4)
(5)
(2)
NOTES:
(2,3)
DDQX
(2 )
16 is a NC for IDT70V3589.
1. A
2. V
DD, OPTX, and VDDQX must be set to appropriate operating levels prior to
applying inputs on the I/Os and controls for that port.
X selects the operating voltage levels for the I/Os and controls on that port.
3. OPT
X is set to VIH (3.3V), then that port's I/Os and controls will operate at 3.3V
If OPT
levels and V
DDQX must be supplied at 3.3V. If OPTX is set to VIL (0V), then that
port's I/Os and address controls will operate at 2.5V levels and V
DDQX must be
supplied at 2.5V. The OPT pins are independent of one another—both ports can
operate at 3.3V levels, both can operate at 2.5V levels, or either can operate
at 3.3V with the other at 2.5V.
X is asserted, the counter will reset to the last valid address loaded
X.
IH, i.e., the
56 17 tbl 01
4. When REPEAT
via ADS
5. Chip Enables and Byte Enables are double buffered when PL/FT = V
signals take two cycles to deselect.
6.42
5
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Truth Table I—Read/Write and Enable Control
CE
OE
CLK
CE
X
↑
X
↑
X
↑
X
↑
X
↑
X
↑
X
↑
X
↑
X
↑
X
↑
L
↑
L
↑
L
↑
L
↑
L
↑
L
↑
L
↑
H
↑
1
0
HXXXXXXHigh-ZHigh-ZHigh-ZHigh-ZDeselected–Power Down
XLXXXXXHigh-ZHigh-ZHigh-ZHigh-ZDeselected–Power Down
4. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here.
Truth Table II—Address Counter Control
External
Addr ess
Internal
Addr ess
XXAn
AnXAn
AnApAp
XApAp + 1↑H L
NOTES:
Previ ous
1. "H" = V
IH, "L" = VIL, "X" = Don't Care.
2. Read and write operations are controlled by the appropriate setting of R/W, CE
Internal
Addr ess
UsedCLK
ADSCNTEN REPEAT
XX L
↑
(4)
L
↑
↑
XHD
HH H D
(5)
(6)
(4)
HD
(1,2)
(3)
I/O
D
I/O
(0)Counter Reset to last valid ADS load
I/O
(n)External Address Used
I/O
(p)External Address Blocked—Counter disabled (Ap reused)
I/ O
(p+1) Counter Enabled—Internal Address generation
0, CE1, BEn and OE.
MODE
5617 tb l 03
3. Outputs configured in flow-through output mode: if outputs are in pipelined mode the date out will be delayed by one cycle.
4. ADS and REPEAT are independent of all other memory control signals including CE
5. The address counter advances if CNTEN = V
IL on the rising edge of CLK, regardless of all other memory control signals including CE0, CE1, BEn.
0, CE1 and BEn
6. When REPEAT is asserted, the counter will reset to the last valid address loaded via ADS. This value is not set at power-up: a known location should be loaded
via ADS during initialization if desired. Any subsequent ADS access during operations will update the REPEAT address location.
6.42
6
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Recommended Operating
DD
Unit
o
o
o
(1)
5617 tbl 04
C
C
C
5617 tbl 06
Temperature and Supply Voltage
Ambient
Grade
Commercial0OC to +70OC0V3.3V + 150mV
Industrial-40
NOTES:
1. This is the parameter TA. This is the "instant on" case temperature.
Absolute Maximum Ratings
SymbolRatingComm ercial
(2 )
TERM
V
(3)
BIAS
T
STG
T
T
JN
I
OUT
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
TERMmust not exceed VDD + 150mV for more than 25% of the cycle time or
2. V
4ns maximum, and is limited to
3. Ambient Temperature Under Bias. No AC Conditions. Chip Deselected.
Terminal Voltage
with Resp ect to GND
Temperature Under Bias-55 to +125
Sto rag e Tempe rature-65 to +150
Junction Temperature+150
DC Outp ut Current50mA
TemperatureGNDV
O
C to +85OC0V3.3V + 150mV
(1)
& Industrial
-0.5 to +4.6V
< 20mA for the period of VTERM> VDD + 150mV.
Recommended DC Operating
Conditions with V
SymbolParameterMin. Typ.Max.Unit
DD
Core Sup ply Voltage3.153.33.45V
V
DDQ
I/O S upply Voltage
V
SS
Ground000V
V
Input Hig h Vo lta ge
IH
V
(Ad dre ss & Co ntrol Inp uts)
V
IH
Input High Voltage - I/O
IL
Input Lo w Voltag e-0. 3
V
NOTES:
1. Undershoot of V
TERM must not exceed VDDQ + 100mV.
2. V
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V
as indicated above.
IL > -1.5V for pulse width less than 10ns is allowed.
DDQ at 2.5V
(3 )
2.42.52.6V
____
V
DDQ
V
DDQ
+ 100mV
+ 100mV
0.7V
1.7
(3)
IL (0V), and VDDQX for that port must be supplied
1.7
____
(1)
____
(2 )
(2 )
5617 tb l 05a
V
V
Recommended DC Operating
Conditions with V
SymbolParameterMin. Typ.Max.Unit
DD
Core Supply Voltage3.153.33.45V
V
V
DDQ
I/O Supply Voltage
SS
Ground000V
V
Inp ut Hig h Vo ltage
IH
V
(Address & Control Inputs)
IH
Inp ut Hig h Vo ltage - I/O
V
V
IL
Input Lo w Voltage-0.3
NOTES:
1. Undershoot of V
TERM must not exceed VDDQ + 150mV.
2. V
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V
supplied as indicated above.
IL > -1.5V for pulse width less than 10ns is allowed.
DDQ at 3.3V
(3)
3.153. 33. 45V
____
2.0
(3)
(3)
2.0
(1)
IH (3.3V), and VDDQX for that port must be
V
DDQ
+ 150mV
____
V
DDQ
+ 150mV
____
0.8V
(2)
(2)
5617 tbl 05b
V
V
6.42
7
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Capacitance
(1)
(TA = +25°C, F = 1.0MHZ) PQFP ONLY
SymbolParameterConditions
C
IN
Input CapacitanceVIN = 3dV8pF
(3)
C
OUT
Outp ut CapacitanceV
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
OUT also references CI/O.
3. C
(2)
Max.Unit
OUT
= 3dV10.5pF
5617 tbl 07
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
SymbolParameterTest Conditions
LI
|Input Le akage Current
|I
LO
|Output Leak age Current
|I
OL
(3.3V)Output Lo w Voltage
V
OH
(3.3V) Output High Voltage
V
OL
(2.5V)Output Lo w Voltage
V
OH
(2.5V) Output High Voltage
V
NOTE:
DD < 2.0V leakages are undefined.
1. At V
DDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details.
2. V
(1)
(1)
(2)
(2)
(2)
(2)
V
DDQ
= Max., VIN = 0V to V
CE0 = VIH or CE1 = VIL, V
IOL = +4mA, V
IOH = -4mA, V
IOL = +2mA, V
IOH = -2mA, V
DDQ
= Min.
DDQ
= Min.2.4
DDQ
= Min.
DDQ
= Min.2.0
(VDD = 3.3V ± 150mV)
DDQ
OUT
= 0V to V
DDQ
70V3599/89S
___
___
___
___
10µA
10µA
0.4V
___
0.4V
___
5617 tbl 0 8
UnitMin.Max.
V
V
6.42
8
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
(3)
Temperature and Supply Voltage Range
SymbolP arameterTest ConditionVersi onTyp.
DD
Dynami c Operating
I
Current (Both
Ports Active)
SB1
Standby Current
I
(Both Ports - TTL
Lev el Inputs)
I
SB2
Standby Current
(One Po rt - TTL
Lev el Inputs)
I
SB3
Full Standby Curre nt
(Both Ports - CMOS
Lev el Inputs)
I
SB4
Full Standby Curre nt
(One Po rt - CMOS
Lev el Inputs)
NOTES:
1. At f = f
MAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS" at input
levels of GND to 3V.
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
DD = 3.3V, TA = 25°C for Typ, and are not production tested. IDD DC(f=0)= 120mA (Typ).
4. V
X = VIL means CE0X = VIL and CE1X = VIH
5. CE
CEX = VIH means CE0X = VIH or CE1X = VIL
CEX < 0.2V means CE0X < 0.2V and CE1X > VCC - 0.2V
X > VCC - 0.2V means CE0X > VCC - 0.2V or CE1X - 0.2V
CE
"X" represents "L" for left port or "R" for right port.
L
and CER= VIL,
CE
Outputs Disabled,
(1)
MAX
f = f
L
= CER = V
CE
Outputs Disabled,
f = f
MAX
CE
"A"
= VIL and CE
Active Port Outputs Disabled,
f=f
MAX
IH ,
(1)
(5)
"B"
= V
IH
(1)
Both Ports Outputs Disabled
CE
L
and CER > VDD - 0.2V,
V
IN
> VDD - 0.2V
or V
IN
< 0.2V, f = 0
CE
"A"
< 0.2V and CE
(2)
"B"
> VDD - 0.2V
VIN > VDD - 0.2V or VIN < 0.2V
Active Port, Outputs Disabled, f = f
MAX
(5)
(1)
(VDD = 3.3V ± 150mV)
COM' LS370500320400
INDS
COM'LS125200115160
INDS
COM' LS250350220290
INDS
COM' LS15301530
INDS
COM' LS250350220290
INDS
70V3599/89S166
Com'l Only
(4)
Max.Typ.
________
________
________
________
________
70V3599/89S133
Com 'l
& Ind
(4)
Max.Unit
320480
115195
220350
1540
220350
mA
mA
mA
mA
mA
5617 tb l 09
6.42
9
IDT70V3599/89S
,
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
AC Test Conditions (VDDQ - 3.3V/2.5V)
Input Pulse Levels (Address & Controls)
Inp ut Pul se Level s (I/ Os )
Inp ut Ris e /Fall Times
Inp ut Timing Reference Level s
Output Reference Levels
Output Lo ad
50Ω
DATA
OUT
Figure 1. AC Output Test load.
.
GND to 3
0V/GND to 2.4V
GND to 3.0V/GND to 2.4V
2ns
1.5V/1.25V
1.5V/1.25V
Fig ures 1 and 2
5617 tbl 10
50Ω
10pF
(Tester)
1.5V/1.25
5617 drw 03
DATA
DATA
OUT
770Ω
OUT
435Ω
Figure 2. Output Test Load
CKLZ, tCKHZ, tOLZ, and tOHZ).
(For t
*Including scope and jig.
2.5V
833Ω
3.3V
590Ω
5pF*
5617 drw 04
5pF*
,
,
∆tCD
(Typical, ns)
10.5pF is the I/O capacitance of this
device, and 10pF is the AC Test Load
Capacitance.
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the Operating Temperature Range
(2,3)
(Read and Write Cycle Timing)
SymbolParameterMin.Max.Min.Max.Unit
t
CYC1
t
CYC2
CH1
t
CL1
t
CH2
t
CL2
t
t
SA
HA
t
t
SC
HC
t
SB
t
HB
t
SW
t
HW
t
SD
t
t
HD
SAD
t
HAD
t
SCN
t
t
HCN
SRPT
t
HRPT
t
OE
t
OLZ
t
OHZ
t
t
CD1
CD2
t
DC
t
CKHZ
t
CKLZ
t
Clock Cycle Time (Flow-Through)
Clock Cycle Time (Pipelined)
Cloc k Hig h Time (Flow-Through)
Clo ck Lo w Time (F lo w-Throu gh)
Clock High Time (Pipelined)
Clock Low Time (Pipelined)
Address Setup Time1.7
Address Hold Time0.5
Chip Enable Setup Time1.7
Chip Enable Hold Time0.5
Byte Enable Setup Time1.7
Byte Enable Hold Time0.5
R/W Se tup Tim e1.7
R/W Hold Time0.5
Input Data Se tup Time1.7
Input Data Hold Time0.5
ADS Setup Time
ADS Hold Time
CNTEN Setup Time
CNTEN Hold Time
REPEAT Setup Time
REPEAT Hold Time
Output Enable to Data Valid
Output Enable to Output Low-Z1
Output Enable to Output High-Z13.614.2ns
Clock to Data Valid (Flow-Through)
Clock to Data Valid (Pipelined)
Data Outp ut Ho ld Afte r Cl ock Hig h1
Clo ck Hi gh to Output High-Z1313ns
Clo ck Hi gh to Output Lo w-Z1
Port-to-Port Delay
CO
t
Clock-to-Clock Offset5
NOTES:
1. The Pipelined output parameters (t
FT/PIPE = V
IL for that port.
CYC2, tCD2) apply to either or both left and right ports when FT/PIPEX = VIH. Flow-through parameters (tCYC1, tCD1) apply when
2. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE) and FT/PIPE. FT/PIPE should be treated as a
DC signal, i.e. steady state during operation.
3. These values are valid for either level of V
(1)
(1)
(1)
(1)
(2)
(1)
(1)
(1)
DDQ (3.3V/2.5V). See page 5 for details on selecting the desired operating voltage levels for each port.
(VDD = 3.3V ± 150mV, TA = 0°C to +70°C)
70V3599/89S166
Com'l Only
20
6
6
6
2.1
2.1
1.7
0.5
1.7
0.5
1.7
0.5
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
4.0
____
12
3.6
____
____
____
70V3599/89S133
Com 'l
& Ind
25
7.5
7
7
2.6
2.6
1.8
0.5
1.8
0.5
1.8
0.5
1.8
0.5
1.8
0.5
1.8
0.5
1.8
0.5
1.8
0.5
____
1
____
____
1
1
6
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
4.2ns
____
15ns
4.2ns
____
____
____
5617 tbl 11
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6.42
11
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of Read Cycle for Pipelined Operation
(FT/PIPE
CLK
CE
0
CE
1
BE
n
R/
W
ADDRESS
DATA
OUT
OE
'X' = VIH)
tSCt
t
t
tSAt
(4)
(1)
(2)
t
CYC2
t
CH2
HC
t
HB
SB
t
HW
SW
HA
AnAn + 1An+ 2An + 3
(1 Latency)
t
CKLZ
t
CL2
tSCt
(3)
tSBt
HB
(5)
t
t
CD2
(1)
DC
QnQn + 1Qn + 2
t
OHZ
HC
(5)
t
OLZ
t
OE
5617drw 06
Timing Waveform of Read Cycle for Flow-through Output
(FT/PIPE
"X" = VIL)
CLK
CE
0
CE
1
BEn
R/
W
OUT
OE
(4)
(1)
ADDRESS
DATA
NOTES:
1. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge.
2. ADS = V
IL, CNTEN and REPEAT = VIH.
3. The output is disabled (High-Impedance state) by CE
Truth Table 1.
4. Addresses do not have to be accessed sequentially since ADS = V
are for reference use only.
n was HIGH, then the appropriate Byte of DATAOUT for Qn + 2 would be disabled (High-Impedance state).
5. If BE
6. "x" denotes Left or Right port. The diagram is with respect to that port.
(2,6)
t
CYC1
t
CH1
tSCt
HC
tSBt
HB
t
SW
t
HW
tSAt
HA
AnAn + 1An + 2An + 3
t
CKLZ
t
CL1
tSCt
t
t
t
CD1
DC
QnQn + 1Qn + 2
t
OHZ
0 = VIH, CE1 = VIL, BEn = VIH following the next rising edge of the clock. Refer to
IL constantly loads the address on the rising edge of the CLK; numbers
t
OLZ
t
OE
(3)
SB
HC
t
HB
t
CKHZ
(5)
t
DC
5617drw 07
6.42
12
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of a Multi-Device Pipelined Read
t
CYC2
t
CH2
t
CL2
(1,2)
CLK
tSAt
HA
A
ADDRESS
CE
DATA
OUT(B1)
ADDRESS
CE
(B1)
0(B1)
(B2)
0(B2)
tSCt
tSAt
tSCt
A
A
A
A
tSCt
Q
A
tSCt
2
HC
t
CD2
0
t
DC
2
HC
A
0
HC
HA
A
0
HC
A
1
t
CD2
A
1
3
t
CKHZ
Q
1
t
DC
A
3
4
t
CD2
t
CKLZ
A
4
5
Q
3
t
CKHZ
A
5
6
A
6
DATA
OUT(B2)
t
CKLZ
t
CD2
t
CKHZ
Q
2
Timing Waveform of a Multi-Device Flow-Through Read
t
CYC1
t
CH1
t
CL1
CLK
tSAt
HA
A
A
ADDRESS
CE
DATA
OUT(B1)
ADDRESS
CE
DATA
OUT(B2)
(B1)
0(B1)
(B2)
0(B2)
A
tSCt
tSAt
A
tSCt
A
tSCt
D
A
tSCt
2
HC
(1)
t
CKHZ
1
t
DC
2
HC
t
CD1
(1)
t
CKLZ
0
HC
t
CD1
HA
0
HC
A
1
t
CD1
D
0
t
DC
A
1
3
t
CD1
(1)
t
CKLZ
A
3
(1)
t
CKHZ
D
2
NOTES:
1. B1 Represents Device #1; B2 Represents Device #2. Each Device consists of one IDT70V3599/89 for this waveform,
and are setup for depth expansion in this example. ADDRESS
n, OE, and ADS = VIL; CE1(B1), CE1(B2), R/W, CNTEN, and REPEAT = VIH.
2. BE
(B1) = ADDRESS(B2) in this situation.
4
D
3
t
CKHZ
A
4
t
t
CKLZ
(1,2)
(1)
CD1
(1)
t
CD2
Q
5617 drw 08
(1)
4
A
6
D
5
A
6
t
CKLZ
A
5
t
CD1
(1)
t
CKLZ
A
5
t
CKHZ
D
4
5617 drw 09
6.42
13
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of Left Port Write to Pipelined Right Port Read
CLK
"A"
tSWt
HW
R/W
"A"
tSAt
HA
ADDRESS
DATA
CLK
R/W
ADDRESS
IN"A"
"A"
"B"
"B"
"B"
MATCH
tSDt
VALID
tSWt
tSAt
MATCH
HD
(3)
t
CO
HW
HA
NO
MATCH
t
CD2
NO
MATCH
(1,2,4)
DATA
OUT"B"
NOTES:
0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.
1. CE
2. OE = V
3. If t
IL for Port "B", which is being read from. OE = VIH for Port "A", which is being written to.
CO < minimum specified, then data from Port "B" read is not valid until following Port "B" clock cycle (ie, time from write to valid read on opposite port will be
CO + 2 tCYC2 + tCD2). If tCO > minimum, then data from Port "B" read is available on first Port "B" clock cycle (ie, time from write to valid read on opposite port
t
CO + tCYC2 + tCD2).
will be t
VALID
t
DC
5617drw 10
4. All timing is the same for Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite of Port "A"
t
CD1
(1,2,4)
Timing Waveform with Port-to-Port Flow-Through Read
CLK
"A"
tSWt
HW
R/W
"A"
tSAt
HA
ADDRESS
DATA
CLK
R/W
ADDRESS
IN "A"
"A"
"B"
"B"
"B"
MATCH
tSDt
VALID
t
t
MATCH
SW
SA
HD
(3)
t
CO
t
CD1
t
HW
t
HA
NO
MATCH
MATCH
NO
DATA
OUT "B"
t
DC
NOTES:
0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.
1. CE
2. OE = V
3. If t
IL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to.
CO < minimum specified, then data from Port "B" read is not valid until following Port "B" clock cycle (i.e., time from write to valid read on opposite port will be
CO + tCYC + tCD1). If tCO > minimum, then data from Port "B" read is available on first Port "B" clock cycle (i.e., time from write to valid read on opposite port will
t
CO + tCD1).
be t
VALID
VALID
t
DC
5617 drw 11
4. All timing is the same for both left and right ports. Port "A" may be either left or right port. Port "B" is the opposite of Port "A".
6.42
14
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read-to-Write-to-Read
(OE = V
IL)
(2)
CLK
CE
0
tSCt
CE
1
tSBt
BE
n
R/
ADDRESS
DATA
DATA
OUT
W
IN
tSWt
(3)
tSAt
NOTES:
1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
0, BEn , and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. "NOP" is "No Operation".
2. CE
3. Addresses do not have to be accessed sequentially since ADS = V
are for reference use only.
4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
t
CYC2
t
CH2tCL2
HC
HB
tSWt
HW
HW
AnAn +1An + 2An + 2
HA
t
SD
t
Dn + 2
t
(1)
CD2
t
CKHZ
Qn
READNOPREAD
IL constantly loads the address on the rising edge of the CLK; numbers
(4)
HD
WRITE
An + 3An + 4
CKLZ
t
t
CD2
Qn + 3
5617drw 12
Timing Waveform of Pipelined Read-to-Write-to-Read (OE Controlled)
t
CYC2
t
CH2tCL2
CLK
CE
0
tSCt
HC
CE
1
tSBt
HB
BE
n
tSWt
HW
R/
W
ADDRESS
DATA
IN
DATA
OUT
OE
NOTES:
1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.
2. CE
3. Addresses do not have to be accessed sequentially since ADS = V
use only.
4. This timing does not meet requirements for fastest speed grade. This waveform indicates how logically it could be done if timing so allows.
tSWt
HW
(3)
AnAn +1An + 2An + 3
tSAt
HA
t
(1)
CD2
Qn
t
OHZ
tSDt
(4)
HD
Dn + 3Dn + 2
READWRITEREAD
IL constantly loads the address on the rising edge of the CLK; numbers are for reference
An + 4
t
CKLZ
An + 5
t
CD2
Qn + 4
5617 drw 13
(2)
6.42
15
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of Flow-Through Read-to-Write-to-Read (OE = VIL)
t
CYC1
t
CH1tCL1
(2)
CLK
CE
0
tSCt
HC
CE
1
tSBt
HB
BEn
tSWt
HW
R/
W
tSWt
HW
ADDRESS
DATA
DATA
OUT
(3)
IN
(1)
An
tSAt
An +1An + 2An + 2
HA
tSDt
HD
An + 3
Dn + 2
t
CD1
Qn
READ
t
CD1
t
CD1
Qn + 1
t
DC
t
NOP
CKHZ
(5)
WRITE
t
CKLZ
An + 4
Qn + 3
READ
t
CD1
t
DC
6517drw 14
Timing Waveform of Flow-Through Read-to-Write-to-Read (OE Controlled)
t
CYC1
t
CH1
t
CL1
CLK
CE
0
tSCt
HC
CE
1
tSBt
HB
BEn
tSWt
HW
tSWt
R/
W
HW
(2)
ADDRESS
DATA
DATA
OUT
(3)
IN
(1)
An
tSAt
HA
t
t
CD1
DC
tSDt
Dn + 2
HD
Dn + 3
An +1An + 2An + 3
An+ 4
t
OE
t
CD1
Qn
t
t
OHZ
CKLZ
An + 5
Qn + 4
t
t
DC
OE
READWRITEREAD
NOTES:
1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.
2. CE
3. Addresses do not have to be accessed sequentially since ADS = V
IL constantly loads the address on the rising edge of the CLK; numbers are for
reference use only.
4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
6.42
16
CD1
5617drw 15
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read with Address Counter Advance
t
CYC2
t
CH2tCL2
(1)
CLK
tSAt
HA
ADDRESSAn
t
SADtHAD
ADS
t
SADtHAD
CNTEN
DATA
OUT
Qx - 1
(2)
READ
EXTERNAL
ADDRESS
Qx
t
CD2
Qn
t
DC
READ WITH COUNTER
t
SCNtHCN
Qn + 1
COUNTER
HOLD
Qn + 2
(2)
READ
WITH
COUNTER
Qn + 3
5617 drw 16
Timing Waveform of Flow-Through Read with Address Counter Advance
t
CYC1
t
CH1tCL1
CLK
tSAt
HA
ADDRESS
ADS
CNTE N
An
t
SADtHAD
t
SADtHAD
t
SCNtHCN
(1)
t
CD1
(2)
DATA
OUT
Qx
t
DC
READ
EXTERNAL
ADDRESS
NOTES:
0, OE, BEn = VIL; CE1, R/W, and REPEAT = VIH.
1. CE
2. If there is no address change via ADS = V
IL (loading a new address) or CNTEN = VIL (advancing the address), i.e. ADS = VIH and CNTEN = VIH, then
the data output remains constant for subsequent clocks.
Qn
Qn + 1Qn + 2
Qn + 3
READ WITH COUNTERCOUNTER
HOLD
6.42
17
(2)
Qn + 4
READ
WITH
COUNTER
5617drw17
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Address Counter Advance
(Flow-through or Pipelined Inputs)
t
CYC2
t
CH2tCL2
CLK
tSAt
HA
ADDRESS
An
(1)
INTERNAL
ADDRESS
ADS
CNTEN
DATA
(3)
t
SADtHAD
tSDt
HD
IN
Dn
WRITE
EXTERNAL
ADDRESS
An
(7)
t
SCNtHCN
Dn + 1
WRITE
WITH COUNTER
An + 1
Dn + 1Dn + 2
WRITE
COUNTER HOLD
Timing Waveform of Counter Repeat
t
CYC2
t
CH2tCL2
CLK
ADDRESS
INTERNAL
ADDRESS
(3)
Ax
R/
W
LAST ADS LOAD
tSWt
HW
(2)
An + 2
tSAt
LAST ADS +1
An + 3
Dn + 3
Dn + 4
WRITEWITHCOUNTE R
HA
An
(4)
An + 1
AnAn+ 1
An + 4
5617drw18
An + 2
ADS
CNTEN
t
SRPT
t
HRPT
REPEAT
DATA
IN
(5)
DATA
OUT
EXECUTE
NOTES:
1. CE
0, BEn, and R/W = VIL; CE1 and REPEAT = VIH.
0, BEn = VIL; CE1 = VIH.
CE
2.
3. The "Internal Address" is equal to the "External Address" when ADS = V
4. Addresses do not have to be accessed sequentially since ADS = V
REPEAT
t
SADtHAD
t
SCNtHCN
t
SD
D
(6)
t
HD
0
LAST ADS
ADDRESS
WRITE
Q
Q
LAST
READ
LAST ADS
ADDRESS
IL and equals the counter output when ADS = VIH.
IL constantly loads the address on the rising edge of the CLK; numbers are for reference
READ
LAST AD S
ADDRESS + 1
READ
ADDRESSn
LAST+1
READ
ADDRESS n+1
Qn
5617 drw 19
use only.
5. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
6. No dead cycle exists during REPEAT operation. A READ or WRITE cycle may be coincidental with the counter REPEAT cycle: Address loaded by last valid
ADS load will be accessed. Extra cycles are shown here simply for clarification. For more information on REPEAT function refer to Truth Table II.
7. CNTEN = V
IL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance. The ‘An +1’Address is
written to during this cycle.
6.42
18
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Functional Description
The IDT70V3599/89 provides a true synchronous Dual-Port Static
RAM interface. Registered inputs provide minimal set-up and hold times
on address, data, and all critical control inputs. All internal registers are
clocked on the rising edge of the clock signal, however, the self-timed
internal write pulse is independent of the LOW to HIGH transition of the clock
signal.
An asynchronous output enable is provided to ease asynchronous bus interfacing. Counter enable inputs are also provided to stall
the operation of the address counters for fast interleaved
memory applications.
A HIGH on CE0or a LOW on CE1 for one clock cycle will power down
the internal circuitry to reduce static power consumption. Multiple chip
enables allow easier banking of multiple IDT70V3599/89s for depth
expansion configurations. Two cycles are required with CE0 LOW and
CE1 HIGH to re-activate the outputs.
(1)
A17/A
16
IDT70V3599/89
Control Inputs
CE
CE
0
1
Depth and Width Expansion
The IDT70V3599/89 features dual chip enables (refer to Truth
Table I) in order to facilitate rapid and simple depth expansion with no
requirements for external logic. Figure 4 illustrates how to control the
various chip enables in order to expand two devices in depth.
The IDT70V3599/89 can also be used in applications requiring
expanded width, as indicated in Figure 4. Through combining the control
signals, the devices can be grouped as necessary to accommodate
applications needing 72-bits or wider.
IDT70V3599/89
V
DD
Control Inputs
CE
CE
0
1
V
DD
NOTE:
1. A
17 is for IDT70V3599, A16 is for IDT70V3589.
IDT70V3599/89
CE
CE
1
0
Control Inputs
Figure 4. Depth and Width Expansion with IDT70V3599/89
IDT70V3599/89
Control Inputs
CE
1
CE
0
5617 drw 20
BE,
R/W,OE,
CLK,
ADS,
REPEAT,
CNTEN
6.42
19
IDT70V3599/89S
,
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
JTAG Timing Specifications
t
JCYC
t
t
JCL
JR
t
JCH
TCK
t
JF
Device Inputs
(1)
/
TDI/TMS
t
JStJH
(2)
TDO
/
t
JRSR
Device Outputs
TRST
t
JRST
Figure 5. Standard JTAG Timing
NOTES:
1. Device inputs = All device inputs except TDI, TMS, and TRST.
2. Device outputs = All device outputs except TDO.
JTAG AC Electrical
Characteristics
SymbolParameterMin.Max.Units
JCYC
t
JCH
t
JCL
t
JR
t
JF
t
JRST
t
JRSR
t
JCD
t
JDC
t
JS
t
JH
t
NOTES:
1. Guaranteed by design.
2. 30pF loading on external output signals.
3. Refer to AC Electrical Test Conditions stated earlier in this document.
4. JTAG operations occur at one speed (10MHz). The base device may run at
any speed specified in this datasheet.
JTAG Clock Input Period100
JTAG Clock HIGH40
JTAG Clock Rise Time
JTAG Clock Fall Time
JTAG Reset Recovery50
JTAG Data Output
JTAG Data Output Ho ld0
(1,2,3,4)
JTAG Clock Low40
____
____
JTAG Reset50
____
JTAG Setup15
JTAG Hold15
70V3599/89
____
____
____
(1)
3
(1)
3
____
____
25ns
____
____
____
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5617 tbl 12
t
JDC
t
JCD
5617 drw 21
6.42
20
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Identification Register Definitions
Instruction Fi eldValueDescription
Revision Number (31:28)0x0Reserved for version number
IDT Device ID (27:12)
0x0312
(1)
Defines IDT part numb er
IDT JEDEC ID (11:1)0x33Allows unique identif ication of device vendor as IDT
ID Register Indicator Bit (Bit 0)1Indicates the presence of an ID register
NOTE:
1. Device ID for IDT70V3589 is 0x0313.
5617 tbl 13
Scan Register Sizes
Register NameBit Size
Instruction (IR)4
Bypass (BYR)1
Identific ati o n (IDR)32
Boundary Scan (BSR)Note (3)
5617 tbl 14
System Interface Parameters
InstructionCodeDescription
EXTEST0000Forces contents of the boundary scan cells onto the device outputs
Places the boundary scan registe r (BSR) be tween TDI and TDO.
BYPA SS1111P l aces the by p ass registe r (BY R) b e twe en TDI a nd TDO .
IDCODE0010Loads the ID register (IDR) with the vendor ID code and places the
HIGHZ
0011Places the bypass register (BYR) between TDI and TDO. Forces all
SAMPLE/PRELOAD0001Places the boundary scan register (BSR) between TDI and TDO.
RESERVEDAll othe r codesSev eral co mbinations are reserv ed. Do no t use cod e s o ther than thos e
NOTES:
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, and TRST.
3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local
IDT sales representative.
register between TDI and TDO.
device output drivers to a High-Z state.
(2)
SAMPLE allows data from device inputs
to be captured in the
boundary scan cells and shifted se rially through TDO. PRELOAD allows
data to be input serially into the boundary scan cells via the TDI.
identified above.
5617 tbl 15
(1)
.
6.42
21
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Datasheet Document History:
6/2/00:Initial Public Offering
7/12/00:Added mux to functional block diagram
7/30/01:Page 20 Changed maximum value for JTAG AC Electrical Characteristics for tJCD from 20ns to 25ns
Page 9 Added Industrial Temperature DC Parameters
11/20/01:Page 2, 3 & 4 Added date revision for pin configurations
Page 11 Changed t
Page 1 & 22 Replaced TM logo with ® logo
Page 10 Changed AC Test Conditions Input Rise/Fall Times
7/1/02:Consolidated multiple devices into one datasheet
Page 1 & 5 Added DCD capability for Pipelined Outputs
Page 7 Clarified T
Page 9 Changed DC Electrical Parameters
Page 11 Removed Clock Rise & Fall Time from AC Electrical Characteristics Table
Removed Preliminary status
05/19/03:Page 11 Added Byte Enable SetupTime & Byte Enable Hold Time to AC Elecctrical Characteristics Table
Page 22 Added IDT Clock Solution Table
OE value in AC Electrical Characteristics, please refer to Errata #SMEN-01-05
BIAS and added TJN
CORPORATE HEADQUARTERSfor SALES:for Tech Support:
2975 Stender Way800-345-7015 or 408-727-5166831-754-4613
Santa Clara, CA 95054fax: 408-492-8674DualPortHelp@idt.com
www.idt.com
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
6.42
23
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