Datasheet IDT70V06S25G, IDT70V06S25J, IDT70V06S25PF, IDT70V06S35G, IDT70V06S35J Datasheet (Integrated Device Technology Inc)

...
Integrated Device Technology, Inc.
HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM
IDT70V06S/L
FEATURES:
• High-speed access — Commercial:25/35/55ns (max.)
• Low-power operation — IDT70V06S
Active: 350mW (typ.) Standby: 3.5mW (typ.)
— IDT70V06L
Active: 350mW (typ.) Standby: 1mW (typ.)
• IDT70V06 easily expands data bus width to 16 bits or more using the Master/Slave select when cascading more than one device
•M/S = H for M/S = L for
BUSY
output flag on Master
BUSY
input on Slave
• Busy and Interrupt Flags
FUNCTIONAL BLOCK DIAGRAM
OE
L
CE
L
L
R/
W
• On-chip port arbitration logic
• Full on-chip hardware support of semaphore signaling between ports
• Fully asynchronous operation from either port
• Devices are capable of withstanding greater than 2001V electrostatic discharge
• Battery backup operation—2V data retention
• LVTTL-compatible, single 3.3V (±0.3V) power supply
• Available in 68-pin PGA, 68-pin PLCC, and a 64-pin TQFP
DESCRIPTION:
The IDT70V06 is a high-speed 16K x 8 Dual-Port Static RAM. The IDT70V06 is designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual­Port RAM for 16-bit-or-more word systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 16-bit or wider memory system applications results in full-speed, error-free
OE
R
CE
R
R/
W
R
I/O0L- I/O
NOTES:
1. (MASTER):
BUSY
is output; (SLAVE): is input.
2. BUSY outputs and INT outputs are non-tri­stated push-pull.
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
BUSY
BUSY
L
A
SEM
INT
(1,2)
13L
A
7L
Address
0L
L (2)
L
Decoder
CE
OE
R/
W
L L L
14
I/O
Control
MEMORY
ARRAY
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
M/
S
I/O
Control
Address Decoder
14
CE
R
OE
R
R/
W
R
I/O0R-I/O
BUSY
A
13R
A
0R
SEM
R (2)
INT
R
2942 drw 01
R
7R
(1,2)
COMMERCIAL TEMPERATURE RANGE OCTOBER 1996
©1996 Integrated Device Technology, Inc. DSC-2942/4
For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.
6.36
1
IDT70V06S/L HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE
operation without the need for additional discrete logic.
This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by
CE
permits the on-chip circuitry of each port to enter a very low standby power mode.
L
L
L
W
SEM
CE
R/
IDT70V06
J68-1 F68-1
TOP VIEW
R
N/C
CE
(1,2)
N/C
13R
A
13L
A
12R
GND
A
(3)
CC
V
11R
A
12L
A
10R
A
10L
11L
A
A
64 63 62 61
40 41 42 43
9R
8R
A
A
7R
A
6L
7L
8L
A
A
A
60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44
2942 drw 02
5R
6R
A
A
9L
A
PIN CONFIGURATIONS
0L
I/O
N/C
L
OE
N/C
PLCC / FLATPACK
R
R
R
W
OE
R/
SEM
INDEX
I/O
2L
I/O
3L
I/O
4L
I/O
5L
GND I/O
6L
I/O
7L
V
CC
GND
0R
I/O I/O
1R
I/O
2R
V
CC
I/O
3R
I/O
4R
I/O
5R
I/O
6R
1L
I/O
98765432168676665 10 11
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
27 28 29 30 31 32 33 34 35 36 37 38 39
7R
I/O
Fabricated using IDT’s CMOS high-performance technol­ogy, these devices typically operate on only 350mW of power. Low-power (L) versions offer battery backup data retention capability with typical power consumption of 500µW from a 2V battery.
The IDT70V06 is packaged in a ceramic 68-pin PGA, a 68­pin PLCC, and a 64-pin thin plastic quad flatpack (TQFP).
A
5L 4L
A A
3L
A
2L
A
1L
A
0L
INT
L
BUSY
L
GND M/
S
R
BUSY
INT
R
A
0R
A
1R
A
2R
A
3R
A
4R
L
L
L
INDEX
1L
I/O
0L
I/O
OE
L
W
R/
SEM
CE
13L
A
CC
V
12L
A
11L
A
10L
A
7L
8L
9L
A
A
5L
6L
A
A
A
NOTES:
1. All Vcc pins must be connected to the power supply.
2. All GND pins must be connected to the ground supply.
3. This text does not indicate the actual part marking.
I/O I/O I/O I/O GND I/O I/O V
CC
GND I/O I/O I/O
V
CC
I/O I/O I/O
0R 1R 2R
3R 4R 5R
64
62
63
1
2L
2
3L
3
4L
4
5L
5 6
6L
7
7L
8
9 10 11
12 13
14
15 16
17
18
19
R
6R
7R
OE
I/O
I/O
60
61
21
20
R
R
W
R/
SEM
59
57
56
58
IDT70V06
PN-64 TQFP
TOP VIEW
23
24
13R
A
GND
25
12R
A
22
R
CE
55
(3)
26
11R
A
54
27
10R
A
53
28
9R
A
52
29
8R
A
51
30
7R
A
50
31
6R
A
49
32
48 47
33
46 45
44 43 42 41 40 39 38 37
36 35 34
5R
A
2942 drw 03
6.36 2
A
4L
A
3L
A
2L
A
1L
A
0L
INT
BUSY
GND M/
S
BUSY
INT
A
0R
A
1R
A
2R
A
3R
A
4R
L
L
R
R
IDT70V06S/L HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE
PIN CONFIGURATIONS (CONT'D)
11
53
10
55
09
57
08
59
07
61
06
63
05
65
04
67
03
51 50 48 46 44 42 40 38 36
A
A
52
A
7L
A
4L
5L
49 39 37
A
3L
6L
54
A
9L
A
8L
56
A
11L
A
10L
58
V
CC
A
12L
60
N/C
A
13L
62
SEM
L
CE
L
64
OE
L
R/
W
L
66
I/O
0L
N/C
(1,2)
M/
A
2L
A
0L
BUSY
S
L
INT
47 45 43 41 34
GND
BUSY
R
INT
A
1L
L
A
1R
A
R
3R
35
A
A
0R
2R
A
4R
32
A
7R
30
A
9R
28 A
IDT70V06
G68-1
11R
26 GND
68-PIN PGA
TOP VIEW
(3)
24
N/C
22
SEM
20
OE
A
5R
33
A
6R
31
A
8R
29
A
10R
27
A
12R
25
A
13R
23
R
CE
R
21
R
R/
W
R
68
02
13579
I/O
1L
I/O
2L
I/O
4L
246810121416
01
I/O
3L
I/O
5L
ABCDEFGH JKL
INDEX
NOTES:
1. All V
CC pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. This text does not indicate the actual part marking.
PIN NAMES
Left Port Right Port Names
CE
L
L R/WR Read/Write Enable
R/
W
L
OE
0L – A13L A0R – A13R Address
A
0L – I/O7L I/O0R – I/O7R Data Input/Output
I/O
SEM
L
L
INT
L
BUSY
CE
R Chip Enable
OE
R Output Enable
SEM
R Semaphore Enable
INT
R Interrupt Flag
BUSY
R Busy Flag
M/
S
V
CC Power
Master or Slave Select
GND Ground
GND GND
I/O
6L
I/O
7L
V
CC
2942 tbl 01
I/O
0R
11 13 15
V
1R
CC
I/O
I/O
I/O2RI/O3RI/O
4R
5R
18 19 I/O
7R
17 I/O
6R
2942
N/C
drw 04
6.36 3
IDT70V06S/L HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE
TRUTH TABLE I – NON-CONTENTION READ/WRITE CONTROL
Inputs
CECE
CE
CECE
R/
WW
W
WW
H X X H High-Z Deselected: Power Down
L L X H DATA L H L H DATA
X X H X High-Z Outputs Disabled
NOTE:
1. A0L — A13L A0R — A13R.
(1)
OEOE
OE
OEOE
SEMSEM
SEM
SEMSEM
Outputs
I/O
0-7 Mode
IN Write to Memory
OUT Read Memory
2942 tbl 02
TRUTH TABLE II – SEMAPHORE READ/WRITE CONTROL
(1)
Inputs Outputs
CECE
CE
CECE
H H L L DATA H
R/
WW
W
WW
OEOE
OE
OEOE
SEMSEM
SEM
SEMSEM
I/O
0-7 Mode
OUT Read Data in Semaphore Flag
X L DATAIN Write DIN0 into Semaphore Flag
L X X L Not Allowed
NOTE: 2942 tbl 03
1. There are eight semaphore flags written to via I/O0 and read from all I/O's (I/O0-I/O7). These eight semaphores are addressed by A0 - A2.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Rating Commercial Unit
(2)
V
TERM
Terminal Voltage –0.5 to +4.6 V with Respect to GND
T
A Operating 0 to +70 °C
RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Grade Temperature GND V
Commercial 0°C to +70°C 0V 3.3V ± 0.3V
CC
2942 tbl 05
Temperature
T
BIAS Temperature –55 to +125 °C
Under Bias
T
STG Storage –55 to +125 °C
Temperature
I
OUT DC Output 50 mA
Current
NOTES: 2942 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. V
TERM must not exceed Vcc + 0.3V.
RECOMMENDED DC OPERATING CONDITIONS
Symbol Parameter Min. Typ. Max. Unit
V
CC Supply Voltage 3.0 3.3 3.6 V
GND Supply Voltage 0 0 0 V V
IH Input High Voltage 2.0 Vcc+0.3 V IL Input Low Voltage -0.3
V
NOTES: 2942 tbl 06
1. VIL≥ -1.5V for pulse width less than 10ns.
2. V
TERM must not exceed Vcc + 0.5V.
(1)
0.8 V
CAPACITANCE
(1)
(TA = +25°C, f = 1.0MHz)TQFP ONLY
Symbol Parameter Conditions
C
IN Input Capacitance VIN = 3dV 11 pF
C
OUT Output VOUT = 3dV 11 pF
Capacitance
NOTES: 2942 tbl 07
1. This parameter is determined by device characterization but is not production tested.
2. 3dV represents the interpolated capacitance when the input and output signals switch from 0V to 3V or from 3V to 0V.
6.36 4
(1)
Max. Unit
IDT70V06S/L HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
|I
LI| Input Leakage Current LO| Output Leakage Current
|I V
OL Output Low Voltage IOL = 4mA 0.4 0.4 V
V
OH Output High Voltage IOH = -4mA 2.4 2.4 V
NOTE: 2942 tbl 08
1. At Vcc 2.0V input leakages are undefined.
(1)
VCC = 3.6V, VIN = 0V to VCC —10—5µA
CE
= VIH, VOUT = 0V to VCC —10—5µA
(VCC = 3.3V ± 0.3V)
IDT70V06S IDT70V06L
DC ELECTRICAL CHARACTERISTICS OVER THE
(1)
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
70V06X25 70V06X35 70V06X55
Test
Symbol Parameter Condition Version Typ.
CC Dynamic Operating
I
Current (Both Ports Active) f = f
ISB1 Standby Current
(Both Ports — TTL Level Inputs) f = f
ISB2 Standby Current
(One Port — TTL Active Port Outputs Open L 30 72 25 62 25 62 Level Inputs) f = f
ISB3 Full Standby Current Both Ports
(Both Ports — All CMOS Level Inputs) V
SB4 Full Standby Current One Port CEL or COM’L. S 50 81 45 71 45 71 mA
I
(One Port — All CMOS Level Inputs)
NOTES: 2942 tbl 09
1. "X" in part numbers indicates power rating (S or L).
2. V
CC = 3.3V, TA = +25°C.
3. At f = f
4. f = 0 means no address or control lines change.
MAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions”
of input levels of GND to 3V.
CE
= VIL, Outputs Open COM’L. S 80 140 70 115 70 115 mA
SEM
= V
IH L 70 120 60 100 60 100
(3)
MAX
CE
R = CEL = VIH COM’L. S 12 25 10 25 10 25 mA
SEM
R =
SEM
L = VIH L10 20 8 20 8 20
(3)
MAX
CE
L or CER = VIH COM’L. S 40 82 35 72 35 72 mA
(3)
MAX
SEM
R =
SEM
L = VIH
CE
L and COM’L. S 1.0 5 1.0 5 1.0 5 mA
R VCC - 0.2V L 0.2 2.5 0.2 2.5 0.2 2.5
CE
IN VCC - 0.2V or
V
IN 0.2V, f = 0
SEM
R =
R VCC - 0.2V L 40 71 35 61 35 61
CE
R =
SEM
V
IN VCC - 0.2V or VIN 0.2V
Active Port Outputs Open
MAX
f = f
SEM
L ≥ VCC - 0.2V
SEM
L ≥ VCC - 0.2V
(3)
(4)
(VCC = 3.3V ± 0.3V)
(2)
Max. Typ.
(2)
Max. Typ.
(2)
Max. Unit
6.36 5
IDT70V06S/L
2942 drw 05
590
30pF435
3.3V
DATA
OUT
BUSY
INT
590
5pF435
3.3V
DATA
OUT
HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE
AC TEST CONDITIONS
Input Pulse Levels GND to 3.0V Input Rise/Fall Times 5ns Max. Input Timing Reference Levels 1.5V Output Reference Levels 1.5V Output Load Figures 1 and 2
2942 tbl 10
Figure 1. AC Output Test
Load
Figure 2. Output Load
(5pF for t
Including scope and jig.
LZ, tHZ, tWZ, tOW)
AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
IDT70V06X25 IDT70V06X35 IDT70V06X55
Symbol Parameter Min. Max. Min. Max. Min. Max. Unit
READ CYCLE
RC Read Cycle Time 25 35 55 ns
t
t
AA Address Access Time 25 35 55 ns
(1, 2)
(1, 2)
(3)
(2)
OE
(2)
or
—25 —35 —55ns
3— 3— 3—ns
—15 —20 —25ns
0— 0— 0—ns
—25 —35 —50ns
SEM
)151515ns
ACE Chip Enable Access Time
t
AOE Output Enable Access Time 15 20 30 ns
t
OH Output Hold from Address Change 3 3 3 ns
t
LZ Output Low-Z Time
t t
HZ Output High-Z Time PU Chip Enable to Power Up Time
t
PD Chip Disable to Power Down Time
t
SOP Semaphore Flag Update Pulse (
t
SAA Semaphore Address Access Time 35 45 65 ns
t
NOTES: 2942 tbl 11
1. Transition is measured ±200mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but not production tested.
3. To access RAM, CE = V
4. "X" in part numbers indicates power rating (S or L).
IL,
SEM
= VIH.
(4)
TIMING OF POWER-UP POWER-DOWN
CE
I
CC
I
SB
t
PU
t
PD
50% 50%
2942 drw 06
6.36 6
IDT70V06S/L HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE
WAVEFORM OF READ CYCLES
(5)
t
RC
ADDR
(4)
t
AA
(4)
t
CE
ACE
t
AOE
(4)
OE
R/
W
t
(1)
t
LZ
DATA
OUT
BUSY
OUT
(3, 4)
t
NOTES:
1. Timing depends on which signal is asserted last, OE or CE.
2. Timing depends on which signal is de-asserted first, CE or
3. t
BDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations
BUSY
4. Start of valid data depends on which timing becomes effective last t
5.
has no relation to valid output data.
SEM
= V
IH.
OE.
BDD
AOE, tACE, tAA or tBDD.
VALID DATA
(4)
OH
(2)
t
HZ
2942 drw 07
AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE
IDT70V06X25 IDT70V06X35 IDT70V06X55
Symbol Parameter Min. Max Min. Max Min. Max. Unit
WRITE CYCLE
WC Write Cycle Time 25 35 55 ns
t
t
EW Chip Enable to End-of-Write AW Address Valid to End-of-Write 20 30 45 ns
t
t
AS Address Set-up Time
t
WP Write Pulse Width 20 25 40 ns
t
WR Write Recovery Time 0 0 0 ns DW Data Valid to End-of-Write 15 20 30 ns
t
HZ Output High-Z Time
t
DH Data Hold Time
t
WZ Write Enable to Output in High-Z
t
OW Output Active from End-of-Write
t
SWRD
t
SPS
t
NOTES: 2942 tbl 12
1. Transition is measured ±200mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed but not tested.
3. To access RAM, CE = V
4. The specification for t over voltage and temperature, the actual t
5. "X" in part numbers indicates power rating (S or L).
SEM
Flag Write to Read Time 5 5 5 ns
SEM
Flag Contention Window 5 5 5 ns
IL,
DH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary
(1, 2)
(4)
SEM
= VIH. To access semaphore, CE = VIH and
(3)
(3)
20 30 45 ns
0— 0 — 0 —ns
—15 — 20 — 25ns
0— 0 — 0 —ns
(1, 2)
(1, 2, 4)
DH will always be smaller than the actual tOW.
—15 — 20 — 25ns
0— 0 — 0 —ns
(5)
SEM
= VIL. Either condition must be valid for the entire tEW time.
6.36 7
IDT70V06S/L HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE
TIMING WAVEFORM OF WRITE CYCLE NO. 1, R/
t
WC
ADDRESS
OE
t
AW
R/
OUT
W
(9)
(6)
t
AS
(7)
t
WZ
(4) (4)
IN
t
WC
t
WP
(2)
CECE
CE
CECE
CE
or SEM
DATA
DATA
TIMING WAVEFORM OF WRITE CYCLE NO. 2,
WW
W
CONTROLLED TIMING
WW
(3)
t
WR
t
OW
t
DW
t
DH
CONTROLLED TIMING
(1,3,5,8)
t
HZ
(1,3,5,8)
(7)
2942 drw 08
ADDRESS
t
AW
CE
or SEM
DATA
NOTES:
1. R/W or
2. A write occurs during the overlap (t
3. t
WR is measured from the earlier of
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the CE or
6. Timing depends on which enable signal is asserted last, CE, or R/W.
7. Timing depends on which enable signal is de-asserted first, CE, or R/W.
8. If OE is Low during R/W controlled write cycle, the write pulse width must be the larger of t
to be placed on the bus for the required t be as short as the specified t
(9)
(6)
t
AS
R/
W
IN
CE
must be High during all address transitions.
SEM
Low transition occurs simultaneously with or after the R/W Low transition, the outputs remain in the High-impedance state.
EW or tWP) of a Low
CE
or R/W (or
WP.
DW. If
(2)
t
EW
t
DW
CE
and a Low R/W for memory array writing cycle.
SEM
or R/W) going High to the end of write cycle.
OE
is High during an R/W controlled write cycle, this requirement does not apply and the write pulse can
(3)
t
WR
t
DH
2942 drw 09
WP or (tWZ + tDW) to allow the I/O drivers to turn off and data
6.36 8
IDT70V06S/L HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE
TIMING WAVEFORM OF SEMAPHORE READ AFTER WRITE TIMING, EITHER SIDE
t
t
SAA
A0-A
SEM
I/O
R/
2
0
W
VALID ADDRESS
t
AW
t
EW
DATA
VALID
t
AS
t
WP
t
t
WR
DW
IN
t
DH
t
SWRD
VALID ADDRESS
t
ACE
t
SOP
t
AOE
DATA
VALID
OE
Read CycleWrite Cycle
NOTES:
1.CE = V
2. "DATA
IH for the duration of the above timing (both write and read cycle).
OUT VALID" represents all I/O's (I/O0-I/O7) equal to the semaphore value.
TIMING WAVEFORM OF SEMAPHORE WRITE CONTENTION
OUT
(1,3,4)
OH
(2)
2942 drw 10
(1)
A
SIDE
SIDE
(2)
(2)
“A”
“B”
0"A"-A2"A"
R/
SEM
A
0"B"-A2"B"
R/
SEM
W
"A"
"A"
W
"B"
"B"
MATCH
MATCH
t
SPS
2942 drw 11
NOTES:
1. D
OR = DOL = VIL, CER = CEL = VIH, Semaphore Flag is released from both sides (reads as ones from both sides) at cycle start.
2. “A” may be either left or right port. “B” is the opposite port from “A”.
3. This parameter is measured from R/
4. If t
SPS is not satisfied, there is no guarantee which side will be granted the semaphore flag.
W
A or
SEM
A going high to R/WB or
SEM
B going High.
6.36 9
IDT70V06S/L HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE
AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
IDT70V06X25 IDT70V06X35 IDT70V06X55
Symbol Parameter Min. Max. Min. Max. Min. Max. Unit
SS
BUSY TIMING (M/
BAA
t
t
BDA
t
BAC
t
BDC
t
APS Arbitration Priority Set-up Time BDD
t
t
WH Write Hold After
BUSY BUSY BUSY BUSY
BUSY
BUSY TIMING (M/
t
WB WH Write Hold After
t
BUSY
PORT-TO-PORT DELAY TIMING
WDD Write Pulse to Data Delay
t
DDD Write Data Valid to Read Data Delay
t
NOTES: 2942 tbl 12
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Read With
of Write With Port-To-Port Delay (M/S= V
2. To ensure that the earlier of the two ports wins.
3. t
BDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual), or tDDD – tDW (actual).
4. To ensure that the write cycle is inhibited during contention.
5. To ensure that a write cycle is completed after contention.
6. "X" is part numbers indicates power rating (S or L).
IH)
S
= V
SS
Access Time from Address Match 25 35 45 ns Disable Time from Address Not Matched 25 35 45 ns Access Time from Chip Enable Low 25 35 45 ns Disable Time from Chip Enable High 25 35 45 ns
Disable to Valid Data
(5)
BUSY
SS
IL)
S
= V
SS
Input to Write
(4)
BUSY
(5)
(2)
(3)
(1)
(1)
IL)".
5— 5—5—ns —35 —40 —50ns 20 25 25 ns
0— 0— 0—ns 20 25 25 ns
—55 —65 —85ns —50 —60 —80ns
(6)
BUSY
(M/S = VIH) or "Timing Waveform
VALID
BUSYBUSY
BUSY (M/
BUSYBUSY
t
DDD
TIMING WAVEFORM OF WRITE WITH PORT-TO-PORT READ AND
t
WC
BUSY
MATCH
S
= VIL (slave).
"A" = VIH and
t
WP
t
DW
MATCH
t
WDD
BUSY
"B" input is shown above.
ADDR
"A"
R/
W
"A"
DATA
IN "A"
(1)
t
APS
ADDR
"B"
"B"
BUSY
DATA
OUT "B"
NOTES:
1. To ensure that the earlier of the two ports wins. tAPS is ignored for M/
2.
CE
L = CER = VIL
3.OE = VIL for the reading port.
4. If M/S = V
5. All timing is the same for left and right port. Port "A" may be either left or right port. Port "B" is the port opposite from Port "A".
IL (slave),
BUSY
is an input. Then for this example
SS
S
= VIH)
SS
t
DH
t
BDA
(3)
(2,4,5)
t
BDD
VALID
2942 drw 12
6.36 10
IDT70V06S/L HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE
TIMING WAVEFORM OF SLAVE WRITE (M/
R/
W
"A"
t
BUSY
"B"
"B"
R/
W
NOTES:
1. t
WH must be met for both
2.
BUSY
is asserted on port "B" blocking R/
BUSY
input (SLAVE) and output (MASTER).
W
"B", until
BUSY
SS
S
= VIL)
SS
(3)
WB
"B" goes High.
t
WP
(2)
WAVEFORM OF BUSY ARBITRATION CONTROLLED BY
ADDR
and
"A" "B"
ADDRESSES MATCH
(1)
t
WH
2942 drw 13
CECE
CE
TIMING (M/
CECE
SS
S
= VIH)
SS
(1)
CE
"A"
(2)
t
APS
CE
"B"
t
BUSY
BAC
"B"
t
BDC
2942 drw 14
WAVEFORM OF BUSY ARBITRATION CYCLE CONTROLLED BY ADDRESS MATCH TIMING
"A"
"B"
IH)
(1)
t
APS
ADDRESS "N"
(2)
MATCHING ADDRESS "N"
t
BAA
t
BDA
(M/
ADDR
ADDR
SS
S
SS
= V
BUSY
"B"
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”.
2. If t
APS is not satisfied, the busy signal will be asserted on one side or another but there is no guarantee on which side busy will be asserted.
6.36 11
2942 drw 15
IDT70V06S/L HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE
AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
IDT70V06X25 IDT70V06X35 IDT70V06X55
Symbol Parameter Min. Max. Min. Max. Min Max. Unit
INTERRUPT TIMING
t
AS Address Set-up Time 0 0 0 ns
t
WR Write Recovery Time 0 0 0 ns
t
INS Interrupt Set Time 25 30 40 ns
t
INR Interrupt Reset Time 30 35 45 ns
NOTE: 2942 tbl 14
1. "X" in part numbers indicates power rating (S or L).
WAVEFORM OF INTERRUPT TIMING
ADDR
CE
R/
"A"
(3) (4)
t
AS
"A"
W
"A"
INTERRUPT SET ADDRESS
(3)
t
INS
(1)
t
WC
(2)
t
WR
(1)
INT
"B"
t
RC
ADDR
"B"
t
AS
CE
"B"
OE
"B"
INT
"B"
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”.
2. See Interrupt truth table.
3. Timing depends on which enable signal is asserted last.
4. Timing depends on which enable signal is de-asserted first.
TRUTH TABLE III — INTERRUPT FLAG
INTERRUPT CLEAR ADDRESS
(3)
(3)
t
INR
(1)
(2)
2942 drw 16
2942 drw 17
Left Port Right Port
WW
R/
CECE
W
L
CE
WW
CECE
OEOE
L
L A0L-A13L
OE
OEOE
INTINT
INT
INTINT
L L X 3FFF X X X X X L X X X X X X L L 3FFF H XXXXL X L L 3FFE H
NOTES: 2942 tbl 15
1. Assumes
2. If
3. If
BUSY BUSY BUSY
L = L = VIL, then no change. R = VIL, then no change.
BUSY
R = VIH.
(3) (2)
WW
L R/
CECE
W
R
CE
WW
CECE
OEOE
R
R A0R-A13R
OE
OEOE
INTINT
R Function
INT
INTINT
(2)
(3)
L L X 3FFE X Set Left
X X X X X Reset Left
Set Right
INT
Reset Right
INT
R Flag
INT
L Flag
INT
R Flag
L Flag
6.36 12
IDT70V06S/L HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE
TRUTH TABLE IV — ADDRESS BUSY ARBITRATION
Inputs Outputs
A
0L-A13L
CECE
CECE
L
CE
CECE
XX HX XH LL
NOTES: 2942 tbl 16
1. Pins IDT70V06 are push pull, not open drain outputs. On slaves the
2. L if the inputs to the opposite port were stable prior to the address and enable inputs of this port. H if the inputs to the opposite port became stable after the address and enable inputs of this port. If t simultaneously.
3. Writes to the left port are internally ignored when internally ignored when
R A0R-A13R
CE
CECE
BUSY
L and
NO MATCH H H Normal
MATCH H H Normal MATCH H H Normal MATCH (2) (2) Write Inhibit
BUSY
R are both outputs when the part is configured as a master. Both are inputs when configured as a slave.
BUSY
(1)
BUSYBUSY
L
BUSY
BUSYBUSY
R outputs are driving low regardless of actual logic level on the pin.
(1)
BUSYBUSY
R
BUSY
BUSYBUSY
APS is not met, either
BUSY
Function
(3)
BUSY
X input internally inhibits writes.
BUSY
L or
BUSY
R = Low will result.
L outputs are driving low regardless of actual logic level on the pin. Writes to the right port are
BUSY
L and
BUSY
X outputs on the
BUSY
R outputs cannot be low
TRUTH TABLE V — EXAMPLE OF SEMAPHORE PROCUREMENT SEQUENCE
(1,2)
Functions D0 - D7 Left D0 - D7 Right Status
No Action 1 1 Semaphore free Left Port Writes "0" to Semaphore 0 1 Left port has semaphore token Right Port Writes "0" to Semaphore 0 1 No change. Right side has no write access to semaphore Left Port Writes "1" to Semaphore 1 0 Right port obtains semaphore token Left Port Writes "0" to Semaphore 1 0 No change. Left port has no write access to semaphore Right Port Writes "1" to Semaphore 0 1 Left port obtains semaphore token Left Port Writes "1" to Semaphore 1 1 Semaphore free Right Port Writes "0" to Semaphore 1 0 Right port has semaphore token Right Port Writes "1" to Semaphore 1 1 Semaphore free Left Port Writes "0" to Semaphore 0 1 Left port has semaphore token Left Port Writes "1" to Semaphore 1 1 Semaphore free
NOTES: 2942 tbl 17
1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70V06.
2. There are eight semaphore flags written to via I/O
0 and read from all I/O's (I/O0-I/O7). These eight semaphores are addressed by A0 - A2.
FUNCTIONAL DESCRIPTION
The IDT70V06 provides two ports with separate control,
address and I/O pins that permit independent access for reads or writes to any location in memory. The IDT70V06 has an automatic power down feature controlled by CE. The controls on-chip power down circuitry that permits the respective port to go into a standby mode when not selected (CE HIGH). When a port is enabled, access to the entire memory array is permitted.
INTERRUPTS
If the user chooses to use the interrupt function, a memory
location (mail box or message center) is assigned to each port. The left port interrupt flag ( writes to memory location 3FFE (HEX). The left port clears the interrupt by reading address location 3FFE. Likewise, the right port interrupt flag (
INT
memory location 3FFF (HEX) and to clear the interrupt flag (
INT
R), the right port must read the memory location 3FFF.
INT
L) is set when the right port
R) is set when the left port writes to
The message (8 bits) at 3FFE or 3FFF is user-defined. If the interrupt function is not used, address locations 3FFE and 3FFF are not used as mail boxes, but as part of the random access memory. Refer to Truth Table for the interrupt opera-
CE
tion.
BUSY LOGIC
Busy Logic provides a hardware indication that both ports of the RAM have accessed the same location at the same time. It also allows one of the two accesses to proceed and signals the other side that the RAM is “Busy”. The busy pin can then be used to stall the access until the operation on the other side is completed. If a write operation has been attempted from the side that receives a busy indication, the write signal is gated internally to prevent the write from proceeding.
The use of busy logic is not required or desirable for all applications. In some cases it may be useful to logically OR the busy outputs together and use any busy indication as an
6.36 13
IDT70V06S/L HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE
MASTER Dual Port RAM
BUSY
L
MASTER Dual Port RAM
BUSY
BUSY
L
Figure 3. Busy and chip enable routing for both width and depth expansion with IDT70V06 RAMs.
L
CE
BUSY
CE
BUSY
R
R
interrupt source to flag the event of an illegal or illogical operation. If the write inhibit function of busy logic is not desirable, the busy logic can be disabled by placing the part in slave mode with the M/S pin. Once in slave mode the
BUSY
pin operates solely as a write inhibit input pin. Normal opera­tion can be programmed by tying the
BUSY
pins high. If desired, unintended write operations can be prevented to a port by tying the busy pin for that port low.
The busy outputs on the IDT 70V06 RAM in master mode, are push-pull type outputs and do not require pull up resistors to operate. If these RAMs are being expanded in depth, then the busy indication for the resulting array requires the use of an external AND gate.
WIDTH EXPANSION WITH BUSY LOGIC MASTER/SLAVE ARRAYS
When expanding an IDT70V06 RAM array in width while using busy logic, one master part is used to decide which side of the RAM array will receive a busy indication, and to output that indication. Any number of slaves to be addressed in the same address range as the master, use the busy signal as a write inhibit signal. Thus on the IDT70V06 RAM the busy pin is an output if the part is used as a master (M/S pin = H), and the busy pin is an input if the part used as a slave (M/S pin = L) as shown in Figure 3.
If two or more master parts were used when expanding in width, a split decision could result with one master indicating busy on one side of the array and another master indicating busy on one other side of the array. This would inhibit the write operations from one port for part of a word and inhibit the write operations from the other port for the other part of the word.
The busy arbitration, on a master, is based on the chip enable and address signals only. It ignores whether an access is a read or write. In a master/slave array, both address and chip enable must be valid long enough for a busy flag to be output from the master before the actual write pulse can be initiated with the R/W signal. Failure to observe this timing can result in a glitched internal write inhibit signal and corrupted data in the slave.
SLAVE Dual Port RAM
BUSY
L
SLAVE Dual Port RAM
BUSY
L
CE
BUSY
CE
BUSY
R
R
DECODER
BUSY
2942 drw 18
R
SEMAPHORES
The IDT70V06 is an extremely fast Dual-Port 16K x 8 CMOS Static RAM with an additional 8 address locations dedicated to binary semaphore flags. These flags allow either processor on the left or right side of the Dual-Port RAM to claim a privilege over the other processor for functions defined by the system designer’s software. As an example, the sema­phore can be used by one processor to inhibit the other from accessing a portion of the Dual-Port RAM or any other shared resource.
The Dual-Port RAM features a fast access time, and both ports are completely independent of each other. This means that the activity on the left port in no way slows the access time of the right port. Both ports are identical in function to standard CMOS Static RAM and can be read from, or written to, at the same time with the only possible conflict arising from the simultaneous writing of, or a simultaneous READ/WRITE of, a non-semaphore location. Semaphores are protected against such ambiguous situations and may be used by the system program to avoid any conflicts in the non-semaphore portion of the Dual-Port RAM. These devices have an automatic power-down feature controlled by CE, the Dual-Port RAM enable, and pins control on-chip power down circuitry that permits the respective port to go into standby mode when not selected. This is the condition which is shown in Truth Table where and
SEM
Systems which can best use the IDT70V06 contain mul­tiple processors or controllers and are typically very high­speed systems which are software controlled or software intensive. These systems can benefit from a performance increase offered by the IDT70V06's hardware semaphores, which provide a lockout mechanism without requiring com­plex programming.
Software handshaking between processors offers the maximum in system flexibility by permitting shared resources to be allocated in varying configurations. The IDT70V06 does not use its semaphore flags to control any resources through hardware, thus allowing the system designer total flexibility in
SEM
, the semaphore enable. The CE and
are both high.
SEM
CE
6.36 14
IDT70V06S/L HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE
system architecture.
An advantage of using semaphores rather than the more common methods of hardware arbitration is that wait states are never incurred in either processor. This can prove to be a major advantage in very high-speed systems.
HOW THE SEMAPHORE FLAGS WORK
The semaphore logic is a set of eight latches which are independent of the Dual-Port RAM. These latches can be used to pass a flag, or token, from one port to the other to indicate that a shared resource is in use. The semaphores provide a hardware assist for a use assignment method called “Token Passing Allocation.” In this method, the state of a semaphore latch is used as a token indicating that shared resource is in use. If the left processor wants to use this resource, it requests the token by setting the latch. This processor then verifies its success in setting the latch by reading it. If it was successful, it proceeds to assume control over the shared resource. If it was not successful in setting the latch, it determines that the right side processor has set the latch first, has the token and is using the shared resource. The left processor can then either repeatedly request that semaphore’s status or remove its request for that semaphore to perform another task and occasionally attempt again to gain control of the token via the set and test sequence. Once the right side has relinquished the token, the left side should succeed in gaining control.
The semaphore flags are active low. A token is requested by writing a zero into a semaphore latch and is released when the same side writes a one to that latch.
The eight semaphore flags reside within the IDT70V06 in a separate memory space from the Dual-Port RAM. This address space is accessed by placing a low input on the pin (which acts as a chip select for the semaphore flags) and using the other control pins (Address, OE, and R/W) as they would be used in accessing a standard Static RAM. Each of the flags has a unique address which can be accessed by either side through address pins A0 – A2. When accessing the semaphores, none of the other address pins has any effect.
When writing to a semaphore, only data pin D0 is used. If a low level is written into an unused semaphore location, that flag will be set to a zero on that side and a one on the other side (see Table III). That semaphore can now only be modified by the side showing the zero. When a one is written into the same location from the same side, the flag will be set to a one for both sides (unless a semaphore request from the other side is pending) and then can be written to by both sides. The fact that the side which is able to write a zero into a semaphore subsequently locks out writes from the other side is what makes semaphore flags useful in interprocessor communica­tions. (A thorough discussing on the use of this feature follows shortly.) A zero written into the same location from the other side will be stored in the semaphore request latch for that side until the semaphore is freed by the first side.
When a semaphore flag is read, its value is spread into all data bits so that a flag that is a one reads as a one in all data bits and a flag containing a zero reads as all zeros. The read
SEM
value is latched into one side’s output register when that side's semaphore select (
SEM
) and output enable (OE) signals go active. This serves to disallow the semaphore from changing state in the middle of a read cycle due to a write cycle from the other side. Because of this latch, a repeated read of a semaphore in a test loop must cause either signal (
SEM
or OE)
to go inactive or the output will never change.
A sequence WRITE/READ must be used by the sema­phore in order to guarantee that no system level contention will occur. A processor requests access to shared resources by attempting to write a zero into a semaphore location. If the semaphore is already in use, the semaphore request latch will contain a zero, yet the semaphore flag will appear as one, a fact which the processor will verify by the subsequent read (see Table III). As an example, assume a processor writes a zero to the left port at a free semaphore location. On a subsequent read, the processor will verify that it has written successfully to that location and will assume control over the resource in question. Meanwhile, if a processor on the right side attempts to write a zero to the same semaphore flag it will fail, as will be verified by the fact that a one will be read from that semaphore on the right side during subsequent read. Had a sequence of READ/WRITE been used instead, system contention problems could have occurred during the gap between the read and write cycles.
It is important to note that a failed semaphore request must be followed by either repeated reads or by writing a one into the same location. The reason for this is easily understood by looking at the simple logic diagram of the semaphore flag in Figure 4. Two semaphore request latches feed into a sema­phore flag. Whichever latch is first to present a zero to the semaphore flag will force its side of the semaphore flag low and the other side high. This condition will continue until a one is written to the same semaphore request latch. Should the other side’s semaphore request latch have been written to a zero in the meantime, the semaphore flag will flip over to the other side as soon as a one is written into the first side’s request latch. The second side’s flag will now stay low until its semaphore request latch is written to a one. From this it is easy to understand that, if a semaphore is requested and the processor which requested it no longer needs the resource, the entire system can hang up until a one is written into that semaphore request latch.
The critical case of semaphore timing is when both sides request a single token by attempting to write a zero into it at the same time. The semaphore logic is specially designed to resolve this problem. If simultaneous requests are made, the logic guarantees that only one side receives the token. If one side is earlier than the other in making the request, the first side to make the request will receive the token. If both requests arrive at the same time, the assignment will be arbitrarily made to one port or the other.
One caution that should be noted when using semaphores is that semaphores alone do not guarantee that access to a resource is secure. As with any powerful programming technique, if semaphores are misused or misinterpreted, a software error can easily happen.
6.36 15
IDT70V06S/L HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE
Initialization of the semaphores is not automatic and must be handled via the initialization program at power-up. Since any semaphore request flag which contains a zero must be reset to a one, all semaphores on both sides should have a one written into them at initialization from both sides to assure that they will be free when needed.
USING SEMAPHORES—SOME EXAMPLES
Perhaps the simplest application of semaphores is their application as resource markers for the IDT70V06’s Dual-Port RAM. Say the 16K x 8 RAM was to be divided into two 8K x 8 blocks which were to be dedicated at any one time to servicing either the left or right port. Semaphore 0 could be used to indicate the side which would control the lower section of memory, and Semaphore 1 could be defined as the indica­tor for the upper section of memory.
To take a resource, in this example the lower 8K of Dual-Port RAM, the processor on the left port could write and then read a zero in to Semaphore 0. If this task were success­fully completed (a zero was read back rather than a one), the left processor would assume control of the lower 8K. Mean­while the right processor was attempting to gain control of the resource after the left processor, it would read back a one in response to the zero it had attempted to write into Semaphore
0. At this point, the software could choose to try and gain control of the second 8K section by writing, then reading a zero into Semaphore 1. If it succeeded in gaining control, it would lock out the left side.
Once the left side was finished with its task, it would write a one to Semaphore 0 and may then try to gain access to Semaphore 1. If Semaphore 1 was still occupied by the right side, the left side could undo its semaphore request and perform other tasks until it was able to write, then read a zero into Semaphore 1. If the right processor performs a similar task with Semaphore 0, this protocol would allow the two
processors to swap 8K blocks of Dual-Port RAM with each other.
The blocks do not have to be any particular size and can even be variable, depending upon the complexity of the software using the semaphore flags. All eight semaphores could be used to divide the Dual-Port RAM or other shared resources into eight parts. Semaphores can even be assigned different meanings on different sides rather than being given a common meaning as was shown in the example above.
Semaphores are a useful form of arbitration in systems like disk interfaces where the CPU must be locked out of a section of memory during a transfer and the I/O device cannot tolerate any wait states. With the use of semaphores, once the two devices has determined which memory area was “off-limits” to the CPU, both the CPU and the I/O devices could access their assigned portions of memory continuously without any wait states.
Semaphores are also useful in applications where no memory “WAIT” state is available on one or both sides. Once a semaphore handshake has been performed, both proces­sors can access their assigned RAM segments at full speed.
Another application is in the area of complex data struc­tures. In this case, block arbitration is very important. For this application one processor may be responsible for building and updating a data structure. The other processor then reads and interprets that data structure. If the interpreting processor reads an incomplete data structure, a major error condition may exist. Therefore, some sort of arbitration must be used between the two different processors. The building processor arbitrates for the block, locks it and then is able to go in and update the data structure. When the update is completed, the data structure block is released. This allows the interpreting processor to come back and read the complete data structure, thereby guaranteeing a consistent data structure.
L PORT
SEMAPHORE
REQUEST FLIP FLOP
D0
D
WRITE
SEMAPHORE
READ
SEMAPHORE
REQUEST FLIP FLOP
Q
Figure 4. IDT70V06 Semaphore Logic
6.36 16
Q
R PORT
D
D0 WRITE
SEMAPHORE READ
2942 drw 19
IDT70V06S/L HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE
ORDERING INFORMATION
IDT
XXXXX
Device
Type
A
Power
999
SpeedAPackage
A
Process/
Temperature
Range
Blank
PF G J
25 35 55
S L
Commercial (0°C to +70°C)
64-pin TQFP (PN64-1) 68-pin PGA (G68-1) 68-pin PLCC (J68-1)
Speed in nanoseconds
Standard Power Low Power
128K (16K x 8) 3.3V Dual-Port RAM70V06
2942 drw 20
6.36 17
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