The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc.1
AHSR026-0A 09/12/2001
12
IC61LV6416
64K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ICSI IC61LV6416 is a high-speed, 1,048,576-bit static
RAM organized as 65,536 words by 16 bits. It is fabricated
using ICSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 8 ns with low power
consumption.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IC61LV6416 is packaged in the JEDEC standard 44-pin
400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TFBGA.
CEChip Enable Input
OEOutput Enable Input
WEWrite Enable Input
LBLower-byte Control (I/O0-I/O7)
UBUpper-byte Control (I/O8-I/O15)
NCNo Connection
VccPower
GNDGround
TRUTH TABLE
I/O PIN
Mode
WEWE
WE
WEWE
Not SelectedXHXXXHigh-ZHigh-ZISB1, ISB2
Output DisabledHLHXXHigh-ZHigh-ZICC
XLXHHHigh-ZHigh-Z
ReadHLLLHDOUTHigh-ZICC
HLLHLHigh-ZDOUT
HLLLLDOUTDOUT
WriteLLXLHDINHigh-ZICC
LLXHLHigh-ZDIN
LLXLLDINDIN
CECE
CE
CECE
OEOE
OE
OEOE
LBLB
LB
LBLB
UBUB
UBI/O0-I/O7I/O8-I/O15Vcc Current
UBUB
6
7
8
9
10
11
12
Integrated Circuit Solution Inc.3
AHSR026-0A 09/12/2001
IC61LV6416
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol ParameterValueUnit
VTERMTerminal Voltage with Respect to GND–0.5 to Vcc+0.5V
TSTGStorage Temperature–65 to +150°C
PTPower Dissipation1.5W
IOUTDC Output Current (LOW)20mA
Note:
1. Stress greater than those listed under
ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the
device. This is a stress rating only and
functional operation of the device at
these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating
conditions for extended periods may
affect reliability.
OPERATING RANGE
RangeAmbient TemperatureVcc
Commercial0°C to +70°C3.3V ± 10%
Industrial–40°C to +85°C3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of
0 to 3.0V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
ParameterUnit
Input Pulse Level0V to 3.0V
Input Rise and Fall Times3 ns
Input and Output Timing1.5V
and Reference Level
Output LoadSee Figures 1a and 1b
Notes:
1. The Vcc operating range for 8 ns is 3.3V +10%, -5%.
tWCWrite Cycle Time8—10—12—15—ns
tSCECE to Write End7—8—9—10—ns
tAWAddress Setup Time7—8—9—10—ns
to Write End
tHAAddress Hold from Write End0—0—0—0—ns
tSAAddress Setup Time0—0—0—0—ns
tPWBLB, UB Valid to End of Write7—8—9—10—ns
tPWEWE Pulse Width7—8—9—10—ns
tSDData Setup to Write End4.5—5—6—7—ns
tHDData Hold from Write End0—0—0—0—ns
(2)
tHZWE
tLZWE
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the write.
WE LOW to High-Z Output—4—5—6—7ns
(2)
WE HIGH to Low-Z Output3—3—3—3—ns
(1,3)
(Over Operating Range)
1
2
3
4
5
6
7
8
9
10
11
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Integrated Circuit Solution Inc.7
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IC61LV6416
AC WAVEFORMS
WRITE CYCLE NO. 1 (
ADDRESS
CE
LB, UB
WE
WRITE
(1)
WEWE
WE Controlled)
WEWE
t
SA
(1,2)
t
AW
t
SCE
t
PWB
t
PWE
t
WC
t
HA
t
t
SD
D
IN
t
HZWE
D
OUT
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least
one of the LB and UB inputs being in the LOW state.
2. WRITE = (CE)
[ (LB) = (UB) ] (WE).
UNDEFINEDUNDEFINED
HD
t
LZWE
HIGH-ZHIGH-Z
8Integrated Circuit Solution Inc.
AHSR026-0A 09/12/2001
IC61LV6416
ORDERING INFORMATION
Commercial Range: 0°C to +70°C