1
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IBB110P
DS-IBB110P-R2
The IBB110P Multifunction Telecom switch combines two
350V Form B relays and one optocoupler in a single
package. The relay uses optically coupled MOSFET technology to provide 1500V of input to output isolation. The
efficient MOSFET switches and photovoltaic die use
Clare’s patented OptoMOS architecture. The optically
coupled input uses highly efficient GaAIAs infrared LEDs.
IBB110P’s allow telecom circuit designers to combine
three discrete functions in a single component. The The
IBB110P small package uses less space than traditional
discrete component solutions.
• Telecommunications
• Telecom Switching
• Tip/Ring Circuits
• Modem Switching (Laptop, Notebook, Pocket Size)
• Hookswitch
• Dial Pulsing
• Ground Start
• Ringer Injection
• Instrumentation
• Multiplexers
• Data Acquisition
• Electronic Switching
• I/O Subsystems
• Meters (Watt-Hour, Water, Gas)
• Medical Equipment-Patient/Equipment Isolation
• Security
• Aerospace
• Industrial Controls
• UL Recognized: File Number E76270
• CSA Certified: File Number LR 43639-12
• VDE Compatible
• BSI Certified:
• BS EN 60950:1992 (BS7002:1992)
Certificate #:7969
• BS EN 41003:1993
Certificate #:7969
• Three Functions in One Package
• Small 16 Pin SOIC Package (PCMCIA Compatible)
• Bi-Directional Current Sensing
• Bi-Directional Current Switching
• 3750V
RMS
Input/Output Isolation
• FCC Compatible
• No EMI/RFI Generation
• Machine Insertable, Wave Solderable
• Tape & Reel Versions Available
Applications
Features
Description
Approvals
Integrated Telecom Circuits
Ordering Information
Part # Description
IBB110P 16 Pin SOIC (50/Tube)
IBB110PTR 16 Pin SOIC (1000/Reel)
IBB110P Units
Load Voltage 350 V
Load Current 100 mA
Max R
ON
35 Ω
Pin Configuration
(N/C)
(N/C)
(Form B)
(Form B)
IBB110P Pinout
1
2
1. (N/C)
2. + LED - Form B Relay #1
3. – LED - Form B Relay #1
4. + LED - Form B Relay #2
5. – LED - Form B Relay #2
6. Emitter - Phototransistor
7. Collector - Phototransistor
8. (N/C)
9. LED - Phototransistor +/–
10. LED - Phototransistor –/+
11. Output - Form B Relay #2
12. Common Source Relay #2
13. Output - Form B Relay #2
14. Output - Form B Relay #1
15. Common Source Relay #1
16. Output - Form B Relay #1
3
4
16
15
14
13
5
6
7
8
12
11
10
9
Switching Characteristics of
Normally Open (Form A) Devices
10ms
CONTROL
+
90%
10%
LOAD
Switching Characteristics of
Normally Closed (Form B) Devices
CONTROL
+
T
ON
10ms
90%
+
10%
+
T
OFF
+
10%
T
OFF
+
90%
T
ON
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IBB110P
Rev. 2
Absolute Maximum Ratings are stress ratings. Stresses
in excess of these ratings can cause permanent damage
to the device. Functional operation of the device at these
or any other conditions beyond those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to the absolute maximum ratings
for an extended period may degrade the device and effect
its reliability.
Absolute Maximum Ratings (@ 25˚ C)
2
Parameter Min Typ Max Units
Total Package Dissipation - - 1
1
W
Isolation Voltage
Input to Output 3750 - - V
RMS
Operational Temperature -40 - +85 °C
Storage Temperature -40 - +125 °C
Soldering Temperature - - +220 °C
(10 Seconds Max.)
1
Above 25˚ derate linerity 1.67mw/˚C
Electrical Characteristics
Parameter Conditions Symbol Min Typ Max Units
Relay Portion
Output Characteristics @ 25°C
Load Voltage (Peak) I
L
= 1µA V
L
- - 350 V
Load Current (Continuous) - I
L
- - 100 mA
Peak Load Current 10ms I
LPK
- - 350 mA
On-Resistance I
L
=100mA R
ON
-- 35Ω
Off-State Leakage Current V
L
=350V; TJ=25°C I
LEAK
-- 1µA
Switching Speeds
Turn-On I
F
=5mA, VL=10V T
ON
-- 3ms
Turn-Off I
F
=5mA, VL=10V T
OFF
-- 3ms
Output Capacitance VL=50V, f=1MHz - - 25 - pF
Relay Portion
Input Characteristics @ 25°C
Input Control Current I
L
=100mA I
F
5- 50mA
Input Dropout Current I
L
=1mA I
F
0.4 - - mA
Input Voltage Drop I
F
=5mA V
F
0.9 1.2 1.4 V
Reverse Input Voltage - V
R
-- 5 V
Reverse Input Current VR=5V I
R
- - 10 µA
Detector Portion
Output Characteristics @ 25°C
Phototransistor Blocking Voltage I
C
=10µA BV
CEO
20 50 - V
Phototransistor Dark Current VCE=5V, I
F
=0mA I
CEO
- 50 500 nA
Saturation Voltage I
C
=2mA, IF=16mA V
SAT
- 0.3 0.5 V
Current Transfer Ratio IF=6mA, VCE=0.5V C
TR
33 - - %
Detector Portion
Input Characteristics @ 25°C
Input Control Current I
C
=2mA,VCE=0.5V I
F
62 - mA
Input Voltage Drop IF=5mA I
CEO
0.9 1.2 1.4 V
Input Current I
C
=1µA, VCE=5V - 5 25 - µA
(Detector must be off)
Input to Output Capacitance V
L
=50V, f=1MHz C
I/O
-3 - pF
Input to Output Isolation - V
I/O
3750 - - V
RMS
IBB110P
Rev. 2
PERFORMANCE DATA*
The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact
our application department.
3
IBB110P
Typical LED Forward Voltage Drop
(N=50 Ambient Temperature = 25°C; IF = 5mADC)
35
30
25
20
15
10
5
0
1.17 1.19 1.21 1.23 1.25
LED Forward Voltage Drop (V)
Device Count (N)
IBB110P
Typical On-Resistance Distribution
(N=50 Ambient Temperature = 25°C)
(Load Current = 100mADC, IF=5mADC)
25
20
15
10
5
0
25.5 27.5 29.5 31.526.5 28.5 30.5
On-Resistance (Ω)
Device Count (N)
IBB110P
Typical Blocking Voltage Distribution
(N=50 Ambient Temperature = 25°C)
25
20
15
10
5
0
357.5 387.5 417.5 443.5372.5 402.5 432.5
Blocking Voltage (V)
Device Count (N)
IBB110P
Typical I
F
for Switch Operation
(N=50 Ambient Temperature = 25°C)
(Load Current = 100mADC)
25
20
15
10
5
0
0.33 0.77 1.21 1.650.55 0.99 1.43
LED Current (mA)
Device Count (N)
IBB110P
Typical IF for Switch Dropout
(N=50 Ambient Temperature = 25°C)
(Load Current = 100mADC)
25
20
15
10
5
0
0.33 0.77 1.210.11 0.55 0.99 1.43
LED Current (mA)
Device Count (N)
IBB110P
Typical Turn-On Time
(N=50 Ambient Temperature = 25°C)
(Load Current = 100mADC; IF = 5mADC)
0.09 0.45 0.81 1.170.27 0.63 0.99
Turn-On (ms)
Device Count (N)
25
20
15
10
5
0
IBB110P
Typical Turn-Off Time
(N=50 Ambient Temperature = 25°C)
(Load Current = 100mADC; IF = 5mADC)
0.45 0.81 1.17 1.350.990.630.27
Turn-Off (ms)
Device Count (N)
25
20
15
10
5
0
IBB110P
Typical Load Current vs. Temperature
Temperature (°C)
Load Current (mA)
180
160
140
120
100
80
60
40
20
0
-40 -20 0 20 40 60 80 120100
5mA
IAB110P
Typical Leakage vs. Temperature
(Measured across Pins 14 & 16 or 11 & 13)
Temperature (°C)
Leakage (µA)
-40
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0
-20 0 20 40 60 80 100
IBB110P
Typical Blocking Voltage vs. Temperature
Temperature (°C)
Blocking Voltage (V
RMS
)
-40
410
405
400
395
390
385
380
-20 0 20 40 60 80 100
IBB110P
Typical Turn-On vs. Temperature
(Load Current = 100mADC)
Temperature (°C)
Turn-On (ms)
-40
0.6
0.5
0.4
0.3
0.2
0.1
0
-20 0 20 40 60 80 100
5mA
IBB110P
Typical Turn-Off vs. Temperature
(Load Current = 100mADC)
Temperature (°C)
Turn-Off (ms)
-40
0.900
0.800
0.700
0.600
0.500
0.400
0.300
0.200
0.100
0
-20 0 20 40 60 80 100
5mA
10mA
20mA
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4
IBB110P
Rev. 2
PERFORMANCE DATA*
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact
our application department.
IBB110P
Typical LED Forward Voltage Drop
vs. Temperature
Temperature (°C)
LED Forward Voltage Drop (V)
1.8
1.6
1.4
1.2
1.0
0.8
-40 -20 0 20 40 60 80 120100
50mA
30mA
20mA
10mA
5mA
IBB110P
Typical Turn-On vs. LED Forward Current
(Load Current = 100mADC)
LED Forward Current (mA)
Turn-On (ms)
0
5 1015202530354045
0.30
0.25
0.20
0.15
0.10
0.05
0
50
IBB110P
Typical Turn-Off vs. LED Forward Current
(Load Current = 100mADC)
LED Forward Current (mA)
Turn-Off (ms)
0
5 1015202530354045
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
50
IBB110P
Typical On-Resistance vs. Temperature
(Load Current = 100mADC; IF = 5mADC)
Temperature (°C)
On-Resistance (Ω)
-40
60
50
40
30
20
10
0
-20 0 20 40 60 80 100
IBB110P
Typical IF for Switch Operation vs. Temperature
(Load Current = 100mADC)
Temperature (°C)
LED Current (mA)
-40
3.000
2.500
2.000
1.500
1.000
0.500
0
-20 0 20 40 60 80 100
IBB110P
Typical IF for Switch Dropout vs. Temperature
(Load Current = 100mADC)
Temperature (°C)
LED Current (mA)
-40
3.000
2.500
2.000
1.500
1.000
0.500
0
-20 0 20 40 60 80 100
IBB110P
Typical Load Current vs. Load Voltage
(Ambient Temperature = 25°C; IF = 5mADC)
Load Voltage (V)
Load Current (mA)
100
80
60
40
20
0
-20
-40
-60
-80
-100
-5 -4 -2 -1-3 0 2 3145
IBB110P
Energy Rating Curve
Time
Load Current (A)
10µs
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1ms100µs 100ms
1s
10ms 10s 100s
IBB110P
Typical Normalized CTR vs. Forward Current
(VCE = 0.5V)
IF (mA)
Normalized CTR (%)
0
2 4 6 8 10 12 14 16 18
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
20
IBB110P
Typical Normalized CTR vs. Temperature
(V
CE
= 0.5V)
Temperature (°C)
Normalized CTR (%)
8
7
6
5
4
3
2
1
0
-40 -20 0 20 40 60 80 120100
1mA
2mA
5mA
10mA
15mA
20mA
IBB110P
Typical Collector Current vs. Forward Current
(VCE = 0.5V)
IF (mA)
I
C
(mA)
0
2468 1210 14 16 18 20
12
10
8
6
4
2
0
IBB110P
5
Rev. 2
Dimensions
mm
(inches)
Mechanical Dimensions
7.493 ± .051
(.295 ± .002)
7.493 ± .127
(.295 ± .005)
.254
(.010)
1.270 TYP.
(.050)
2.108 MAX.
(.083)
1.981 TYP.
(.078)
1.016
(.040)
10.363 ± .127
(.408 ± .005)
8.890 TYP.
(.350)
.406 TYP.
(.016)
10.160 ± .051
(.400 ± .002)
16 Pin SOIC (“P” Suffix)
PC Board Pattern
(Top View)
1.193
(.047)
9.728 ± .051
(.383 ± .002)
.787
(.031)
1.270
(.050)
Tape and Reel Packaging for 16 Pin SOIC Package
7.493 ± .102
(.295 ± .004)
12.090
(.476)
1.753 ± .102
(.069 ± .004)
3.987 ± .102
(.157 ± .004)
1.498 ± .102
(.059 ± .004)
6.731 MAX.
(.265)
.406 MAX.
(.016)
3.175
(.125)
Top Cover
Tape
2.007 ± .102
(.079 ± .004)
11.989 ± .102
(.472 ± .004)
User Direction of Feed
.050R TYP.
16.002 ± .305
(.630 ± .012)
10.693 ± .025
(.421 ± .001)
Embossment
Embossed Carrier
Top Cover
Tape Thickness
.102 MAX.
(.004)
10.897 ± .025
(.429 ± .001)
1.549 ± .102
(.061 ± .004)
330.2 DIA.
(13.00)
116
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Tel: 1-978-524-6700
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Tel: 1-949-831-4622
Fax: 1-949-831-4628
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AMERICAS
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Lead Rep
99 route de Versailles
91160 Champlan
France
Tel: 33 1 69 79 93 50
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ActiveComp Electronic GmbH
Mitterstrasse 12
85077 Manching
Germany
Tel: 49 8459 3214 10
Fax: 49 8459 3214 29
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Via C. Colombo 10/A
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Box 167
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Tel: 46-862-10370
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Bindon Road
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Room N1016, Chia-Hsin, Bldg II,
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Tel: 886-2-2523-6368
Fax: 886-2-2523-6369
http://www.clare.com
Worldwide Sales Offices
Specification: DS-IBB110P-R2
©Copyright 2000, Clare, Inc.
All rights reserved. Printed in USA.
3/23/01
Clare cannot assume responsibility for use of any circuitry other
than circuitry entirely embodied in this Clare product. No circuit
patent licenses nor indemnity are expressed or implied. Clare
reserves the right to change the specification and circuitry, without notice at any time. The products described in this document
are not intended for use in medical implantation or other direct life
support applications where malfunction may result in direct physical harm, injury or death to a person.
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