Silicon Bipolar MMIC 5␣ GHz
POWER CONTROL
RF
IN
V
CC1
GROUND AND
THERMAL
CONTACT
GROUND AND
THERMAL
CONTACT
18
27
RF
OUT
AND V
CC2
GROUND 3 6
45
Active Double Balanced
Mixer/IF␣ Amp
Technical Data
IAM-81008
Features
• RF-IF Conversion Gain
From 0.05– 5 GHz
• IF Conversion Gain From
DC to 1 GHz
• Low Power Dissipation:
65␣ mW at VCC = 5 V Typical
• Single Polarity Bias Supply:
VCC = 4 to 8 V
•
Load-insensitive Performance
• Conversion Gain Flat Over
Temperature
•
Low LO Power Requirements:
–5␣ dBm Typical
• Low Cost Plastic Surface
Mount Package
Description
The IAM-81008 is a complete low
power consumption, double
balanced active mixer housed in a
miniature low cost plastic surface
mount package. It is designed for
narrow or wide bandwidth commercial and industrial applications
having RF inputs up to 5 GHz.
Operation at RF and LO frequencies
less than 50 MHz can be achieved
using optional external capacitors
to ground. The IAM-81008 is
particularly well suited for applications that require load-insensitive
conversion and good spurious
signal suppression with minimum
LO and bias power consumption.
Typical applications include
Plastic SO-8 Package
frequency down conversion,
modulation, demodulation and
phase detection. Markets include
fiber-optics, GPS satelite navigation,
mobile radio, and battery powered
communications receivers.
The IAM series of Gilbert multiplierbased frequency converters is
fabricated using HP’s 10␣ GHz, f
25␣ GHz f
ISOSAT™-I silicon
MAX
,
T
Pin Configuration
bipolar process. This process uses
nitride self alignment,
submicrometer lithography, trench
isolation, ion implantation, gold
metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
Typical Biasing Configuration and Functional Block Diagram
C
C
block
C
1
2
3
4
block
IF Output
= 0 V
V
ee
RF Input
Note: No external baluns are required.
7-119
8
7
6
5
C
block
block
Optional Low
Frequencies
RF Ground
V
= 5 V
CC
Optional Low
LO Ground
LO Input
5965-9107E
IAM-81008 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Voltage 10 V
Power Dissipation
2,3
300 mW
RF Input Power +14 dBm
LO Input Power +14 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
[1]
IAM-81008 Part Number Ordering Information
Part Number Devices Per Reel Reel Size
IAM-81008-TR1 1000 7"
For more information, see “Tape and Reel Packaging for Semmiconductor Devices”.
Thermal Resistance:
θjc = 80°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
CASE
= 25°C.
> 82° C.
C
2. T
3. Derate at 4.4 mW/° C for T
IAM-81008 Electrical Specifications
Symbol Parameters and Test Conditions: Vcc = 5 V, Z
G
F
F
P
IP
C
3 dB
3 dB
1 dB
3
Conversion Gain RF = 2 GHz, LO = 1.75 GHz dB 6.0 8.5 10
RF RF Bandwidth (GC 3 dB Down) IF = 250 MHz GHz 3.5
IF IF Bandwidth (GC 3 dB Down) LO = 2 GHz GHz 0.6
IF Output Power at 1 dB Gain Compression RF = 2 GHz, LO = 1.75 GHz dBm –6
IF Output Third Order Intercept Point RF = 2 GHz, LO = 1.75 GHz dBm 3
[1]
, T
= 25° C
A
= 50 Ω, LO =–5 dBm, RF = –20 dBm Units Min. Typ. Max.
O
NF SSB Noise Figure RF = 2 GHz, LO = 1.75 GHz dB 17
RF Port VSWR f = 0.05 to 3.5 GHz 1.5:1
VSWR LO Port VSWR f = 0.05 to 3.5 GHz 2.0:1
IF Port VSWR f < 1 GHz 1.5:1
RF
LO
LO
I
CC
RF Feedthrough at IF Port RF = 2 GHz, LO = 1.75 GHz d Bc –25
if
LO Leakage at IF Port LO = 1.75 GHz dBm –25
if
LO Leakage at RF Port LO = 1.75 GHz dBm –30
rf
Supply Current mA 10 13 16
Note:
1. The recommended operating voltage range for this device is 4 to 8 V. Typical performance as a function of voltage is on
the following page.
7-120
IAM-81008 Typical Performance, T
= 25° C, V
A
RF: –20 dBm at 2 GHz, LO: –5 dBm at 1.75 GHz
(unless otherwise noted)
15
5
30
= 5 V
CC
15
5
20
0
(dBm)
1 dB
IF P
–10
G
C
–5
02 46 810
VCC (V)
(dB)
C
G
10
5
0
Figure 1. Conversion Gain, IF P
Current vs. VCC Bias Voltage.
and I
CC
10
IF = 70 MHz
5
(dB)
C
G
0
IF = 1 GHz
–5
0.1 0.2 0.5 1.0 2.0 5.0 10
RF FREQUENCY (GHz)
Figure 3. Typical RF to IF Conversion
Gain vs. RF Frequency, TA = 25°C
(Low Side LO).
I
CC
20
(mA)
CC
I
10
P
1 dB
0
1 dB
4:1
RF
LO
IF
3:1
VSWR
2:1
1:1
0.1 1.0 10
FREQUENCY (GHz)
Figure 4. RF, LO and IF Port VSWR
vs. Frequency.
(dB)
C
G
G
C
10
5
0
0
(dBm)
1 dB
IF P
–5
–10
–55 –25 +25 +85 +125
TEMPERATURE (°C)
Figure 2. Conversion Gain, IF P
Current vs. Case Temperature.
and I
CC
(dB)
C
G
Figure 5. RF to IF Conversion Gain
vs. LO Power.
15
I
CC
P
1 dB
10
8
6
4
2
0
–15 –5 0–10 5
LO POWER (dBm)
1 dB
(mA)
CC
I
10
5
10
8
6
(dB)
C
4
G
2
High Side LO
0
Low Side LO
–2
0.01 0.1 1.0 2.0
FREQUENCY, RF–LO (GHz)
LO = 2 GHz
Figure 6. RF to IF Conversion Gain
vs. IF Frequency.
0
RF to IF
LO to IF
LO to RF
–10
–20
RF to IF (dBc)
LO to RF and IF (dBm)
–30
–40
0.1 1.0 10
FREQUENCY (GHz)
Figure 7. RF Feedthrough Relative to
IF Carrier, dBm LO to RF and IF
Leakage vs. Frequency.
7-121
—
21
35
74
>75
>75
>75
>75
>75
>75
>75
>75
>75
>75
>75
>75
0
18
1
2
3
HARMONIC LO ORDER
4
5
0
16
35
42
20
29
44
45
36
45
48
42
72
44
59
52
64
57
64
012345
HARMONIC RF ORDER
Xmn = Pif – P(m*rf – n*lo)
Figure 8. Harmonic Intermodulation
Suppression (dB Below Desired Output)
RF at 1 GHz, LO at 0.752 GHz, IF at 0.248 GHz.
Package Dimensions
SO-8 Plastic Package
1.27 (.050)
6x
3.80/4.00
(.1497/.1574)
Pin 1
1.35/1.75
(.0532/.0688)
0.33/0.51
(.013/.020) 8X
Note:
1. Dimensions are shown in millimeters (inches).
M810
4.72/5.00
(.186/.197)
0.10/0.25
(.004/.0098)
5.84/6.20
(.230/.244)
0.10 (.004)
0°/8°
(.015 ± .004) x 45°
0.41/1.27
(.016/.050)
0.38 ± 0.10
0.19/0.25
(.0075/.0098)
7-122
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