Datasheet HZU6.2L Datasheet (HIT)

Page 1
HZU6.2L
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-776(Z)
Rev 0
Feb. 1999
Features
• Lower reverse current leakage compared with conventional products.
Ordering Information
Type No. Laser Mark Package Code
HZU6.2L 62C URP
Outline
Cathode mark
Mark
12
1. Cathode
2. Anode
62C
Page 2
HZU6.2L
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Power dissipation Pd
*1
150 mW Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C
Note 1. See Fig.2.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Zener voltage V
Z
5.80 6.60 V IZ = 5 mA, 40ms pulse
Reverse current I
R
100 nA VR = 5.0V
Dynamic resistance r
d
30 Ω IZ = 5 mA
Page 3
HZU6.2L
3
Main Characteristic
250
200
150
100
50
200
150100
50
0
0
Fig.2 Power Dissipation Vs. Ambient Temperature
Ambient Temperature Ta (°C)
Power Dissipation P
d
(mW)
Fig.1 Zener current Vs. Zener voltage
Zener Voltage Vz (V)
Zener Current Iz (A)
Fig.3 Surge Reverse Power Ratings
Ta = 25°C
nonrepetitive
Time t (s)
Nonrepetitive Surge Reverses Power P (W)
RSM
Polyimide board
3.0
0.8
1.5
20hx15wx0.8t
1.5
unit: mm
t
P
RSM
10 10
1.0
10 10
1.0
10
10
10
10
10
4
3
2
-5
-4 -3 -2 -1
10
012
34 5
6
8
10
-6
10
-7
10
10
-8
-5
10
-9
10
-10
-2
10
-3
10
-4
7
Page 4
HZU6.2L
4
Main Characteristic
Fig.4 Transient Thermal Impedance
Time t (s)
Transient Thermal Impedance Z (°C/W)
th
1.0
10
10
10
10
4
3
2
10 10
10
10 10 1.0
-2
-1 2
3
Page 5
HZU6.2L
5
Package Dimensions
Unit : mm
1.25±0.15
2.5±0.15
1.7±0.15
0.3±0.150.9±0.15
Cathode Mark
1
2
Hitachi Code JEDECCode
EIAJCode
Weight(g)
URP
— —
0.004
1. Cathode
2. Anode
0 — 0.10
62C
Page 6
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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