8M × 32-Bit Dynamic RAM Module
SMALL OUTLINE MEMORY MODULE
Preliminary Information
• 8 388 608 words by 32-bit organization
• Fast access and cycle time
50 ns access time
95 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
• Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
• Single + 3.3 V (± 0.3 V) supply
• Low power dissipation
max. 2016 mW active (-50 version)
max. 1728 mW active (-60 version)
HYM 328000GD-50/-60
LVCMOS – 3.6 mW standby
LVTTL – 28.8 mW standby
• CAS-before-RAS refresh, RAS-only-refresh, Self Refresh
• 4 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 72 pin, dual read-out, one bank, Small Outline DIMM Module
• Utilizes four 8M × 8 -DRAMs (HYB 3165800T)
• 4096 refresh cycles / 64 ms
• Gold contact pad
Semiconductor Group 187 11.94
HYM328000GD-50/-60
8M x 32 SO-DIMM
The HYM 328000GD -50/-60 is a 32 MByte DRAM module organized as 8 388 608 words by 32-bit
in a 72-pin, dual read-out, small outline package comprising four HYB 3165800T 8M × 8 DRAMs
in 500 mil wide TSOPII-34 - packages mounted together with four 0.2 µF ceramic decoupling
capacitors on a PC board. Each HYB 3165800T is described in the data sheet and is fully
electrically tested and processed according to Siemens standard quality procedure prior to module
assembly. After assembly onto the board, a further set of electrical tests is performed.
The density and speed of the module can be detected by the use of presence detect pins.
These modules are ideal for portable systems applications where high memory capacity is needed.
Ordering Information
Type Ordering Code Package Descriptions
HYM 328000GD -50 on request L-DIM-72-2 50 ns DRAM module
HYM 328000GD -60 on request L-DIM-72-2 60 ns DRAM module
Pin Names
A0-A11 Row Address Input
A0-A10 Column Address Inputs
DQ0 - DQ31 Data Input/Output
RAS0, RAS2 Row Address Strobe
CAS0 - CAS3 Column Address Strobe
WE Read / Write Input
Vcc Power (+3.3 Volt)
Vss Ground
PD1 - PD7 Presence Detect Pins
N.C. No Connection
Presence-Detect and ID-pin Thruth Table *:
Module PD1 PD2 PD3 PD4 PD5 PD6 PD7
HYM 328000GD -50 VSS VSS NC NC VSS VSS NC
HYM 328000GD -60 VSS VSS NC NC NC NC NC
note: PD1 .. PD4 : configuration
PD5 .. PD6 : speed
PD7 : refresh mode (NC = normal refresh)
* acccording to JEDEC letter ballot JC-42.5-95 Item #646/651
Semiconductor Group 188
Pin Configuration
PIN Name PIN NAME PIN NAME PIN NAME
1 VSS 37 DQ16 2 DQ0 38 DQ17
3 DQ1 39 VSS 4 DQ2 40
5 DQ3 41
7 DQ5 43
9 DQ7 45 NC 10 VCC 46 NC
11 PD1 47
13 A1 49 DQ18 14 A2 50 DQ19
15 A3 51 DQ20 16 A4 52 DQ21
17 A5 53 DQ22 18 A6 54 DQ23
19 A10 55 NC 20 NC 56 DQ24
21 DQ8 57 DQ25 22 DQ9 58 DQ26
23 DQ10 59 DQ28 24 DQ11 60 DQ27
25 DQ12 61 VCC 26 DQ13 62 DQ29
27 DQ14 63 DQ30 28 A7 64 DQ31
29 A11 65 NC 30 VCC 66 PD2
31 A8 67 PD3 32 A9 68 PD4
33 NC 69 PD5 34
35 DQ15 71 PD7 36 NC 72 VSS
Front Side
CAS2 6 DQ4 42 CAS3
CAS1 8 DQ6 44 RAS0
WRITE 12 A0 48 NC
RAS2 70 PD6
Back Side
CAS0
HYM328000GD-50/-60
8M x 32 SO-DIMM
Pin2
Pin72
Pin1
Pin71
Semiconductor Group 189
RAS0
HYM328000GD-50/-60
8M x 32 SO-DIMM
CAS0
CAS1
RAS2
CAS2
RAS
CAS
OE
RAS
CAS
OE
RAS
CAS
OE
I/O1-I/O8 DQ0-DQ7
D1
I/O1-I/O8 DQ8-DQ15
D2
I/O1-I/O8 DQ16-DQ23
D3
RAS
CAS3
WE
A0-A11
VCC
VSS
Block Diagramm
Semiconductor Group 190
CAS
OE
C1-C4
D1 - D4
D1 - D4
D1 - D4
I/O1-I/O8 DQ24-DQ32
D4
HYM328000GD-50/-60
8M x 32 SO-DIMM
Absolute Maximum Ratings
1)
Operating temperature range..............................................................................................0 to 70 ˚C
Storage temperature range.........................................................................................– 55 to 150 ˚C
Soldering temperature.............................................................................................................260 ˚C
Soldering time..............................................................................................................................10 s
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation......................................................................................................................1.0 W
Data out current (short circuit)..................................................................................................50 mA
DC Characteristics
T
= 0 to 70 ˚C,
A
V
= 0 V,
SS
V
= 3 V ± 0.3 V
CC
Parameter Symbol Limit Values Unit Note
min. max.
Input high voltage
Input low voltage
Output high voltage (LVTTL)
V
V
V
IH
IL
OH
2.0 Vcc+0.3 V 2)
– 0.3 0.8 V 2)
2.4 – V
Output „H“ level voltage (Iout = -2mA)
Output low voltage (LVTTL)
Output „L“level voltage (Iout = +2mA)
Output high voltage (LVCMOS)
Output „H“ level voltage (Iout = -100uA)
Ouput low voltage (LVCMOS)
Output „L“ level voltage (Iout = +100uA)
Input leakage current,any input
(0 V <Vin < Vcc , all other pins = 0 V
Output leakage current
(DO is disabled, 0 V <
Vcc
Average
supply current:
Vout
< Vcc )
-50 ns version
-60 ns version
(RAS, CAS, address cycling: tRC = tRC min.)
Standby Vcc supply current
(RAS=CAS=Vih)
V
Average
refresh cycles: -50 ns version
(RAS cycling: CAS =VIH: tRC = tRC min.)
cc supply current, during RAS-only
-60 ns version
V
V
V
I
I
I
I
I
OL
OH
OL
I(L)
O(L)
CC1
CC2
CC3
– 0.4 V
Vcc-0.2 - V 6)
- 0.2 V 6)
– 10 10 µA
– 10 10 µA
–
–
560
480
mAmA3) 4) 5)
– 8 mA –
–
–
560
480
mAmA3) 5)
Semiconductor Group 191
HYM328000GD-50/-60
8M x 32 SO-DIMM
DC Characteristics (cont’d)
T
= 0 to 70 ˚C,
A
Parameter Symbol Limit Values Unit Note
V
= 0 V,
SS
V
= 3 V ± 0.3 V
CC
min. max.
AverageVcc supply current,
during fast page mode: -50 ns version
-60 ns version
(RAS =
V
, CAS, address cycling: tPC=tPC min.)
IL
Standby Vcc supply current
(RAS=CAS=Vcc-0.2V)
Average Vcc supply current, during
CAS-before-
RAS refresh mode: -50 ns version
-60 ns version
(RAS, CAS cycling: tRC = tRC min.)
Self Refresh Current
Average Power Supply Current during Self Refresh.
(CBR cycle with tRAS>TRASSmin,
WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
CAS held low,
I
I
I
I
CC4
CC5
CC6
CC7
–
–
340
300
mAmA3) 4) 5)
– 800 A –
–
–
560
480
mAmA3) 4)
– 800 A
Semiconductor Group 192
SO-DIMM PACKAGE OUTLINES
HYM328000GD-50/-60
8M x 32 SO-DIMM
17.78
R 2.0
R 2.0
56.69
FRONT SIDE
1
E
44.45
7.62
8.255
272
BACK SIDE
1.0
71
25.40
3.81
1.0 +/- 0.1
1.27
note:
mechanical key for supply voltage
5 V E = 6.35
3.3V E = 3.175
L-DIM-72-2
Preliminary Drawing
Semiconductor Group 193
VAKAT
((194))
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