Page 1
HUR2x120-40
P1
© 2019 SIRECTIFIER All rights reserved
www.sirectifier.com Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
Dimensions SOT-227
HUR2x120-40
VRSM
V
400
VRRM
V
400
Symbol Test Conditions Maximum Ratings Unit
IFRMS
IFAVM
IFSM TVJ=45
EAS TVJ=25
IAR A
TC=70oC; rectangular, d=0.5
o
C; tp=10ms (50Hz), sine
o
C; non-repetitive; IAS=4A; L=182uH
VA=1.5.VR typ.; f=10kHz; repetitive
TVJ
TVJM
Tstg
Ptot TC=25
VISOL
Md
o
C
50/60Hz, RMS
_
IISOL<1mA
mounting torque (M4)
terminal connection torque (M4)
120
120
1200
2
0.4
-40...+150
150
-40...+150
250
2500
1.1-1.5/9-13
1.1-1.5/9-13
A
A
mJ
o
C
W
V~
Nm/lb.in.
typical 30Weight g
Page 2
HUR2x120-40
P2
© 2019 SIRECTIFIER All rights reserved
www.sirectifier.com Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
Symbol Test Conditions Characteristic Values
typ. max.
IR
VF
RthJC
RthCH
trr
IRM
TVJ=25oC; VR=VRRM
TVJ=150oC; VR=VRRM
IF=120A; TVJ=150oC
TVJ=25oC
with heatsink compound
IF=1A; -di/dt=400A/us; VR=30V; TVJ=25oC ns
VR=100V; IF=200A; -diF/dt=100A/us; TVJ=100oC 6.8 A
0.1
30
5.5
0.01
0.50
1.06
1.24
0.6
Unit
mA
V
K/W
FEATURES
* International standard package
SOT-227
* Isolation voltage 2500 V~
* 2 independent FRED in 1
package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* RoHS compliant
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Page 3
HUR2x120-40
P3
© 2019 SIRECTIFIER All rights reserved
www.sirectifier.com Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
200
150
I
F
TVJ= 125°C
100
[A]
50
150°C
25°C
0.0 0.4 0.8 1.2 1.6 2.0
VF[V]
ig. 1 Forward current
F
IFvs. V
F
3.0
2.5
IF= 240 A
120 A
2.0
Q
rr
1.5
30 A
[µC]
1.0
0.5
0.0
0 200 400 600
TVJ= 125°C
VR= 240 V
-diF/dt [A/µs]
Fig. 2 Typ. reverse recovery charge
Qrrvs. -diF/dt
45
40
IF= 240 A
35
30
I
RM
25
20
[A]
15
10
5
0
0 200 400 600
120 A
30 A
TVJ= 125°C
VR= 240 V
diF/dt [A/µs]
-
Fig. 3 Typ. reverse recovery current
IRMvs. -diF/dt
1.4
1.2
1.0
0.8
K
f
0.6
0.4
0.2
0.0
I
RM
Q
rr
0 40 80 120 160
TVJ[°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRMvs. T
220
200
180
t
rr
160
TVJ= 125°C
VR= 240 V
[ns]
140
120
IF= 240 A
100
80
120 A
30 A
0 200 400 600
-diF/dt [A/µs]
Fig. 5 Typ. reverse recovery time
VJ
trrvs. -diF/dt
t
fr
[ns]
2800
2400
2000
1600
1200
800
0 200 400 600
F
ig. 6 Typ. forward recovery voltage
TVJ= 125°C
t
fr
VR= 240 V
IF= 120 A
-
diF/dt [A/µs]
VFR& tfrvs. diF/dt
28
V
FR
24
V
FR
20
[V]
16
12
8
Page 4
HUR2x120-40
P4
© 2019 SIRECTIFIER All rights reserved
www.sirectifier.com Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
140
120
100
IF= 240 A
80
E
rec
60
120 A
30 A
[µJ]
40
20
0
0 200 400 600
-diF/dt [A/µs]
Fig. 7 Typ. recovery energy
E
vs. -diF/dt
rec
TVJ= 125°C
VR= 240 V
Z
thJC
[K/W]
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
0
10
1
t
10
[ms]
2
Fig. 8 Transient thermal impedance junction to case
10
3
10
4
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