Datasheet HUL7001 Datasheet (Panasonic)

Page 1
Hologram Unit
,,
,,
HUL7001
Hologram Unit
For optical information processing
Features
Smaller package size achieved through micro-mirror integration
Applications
CD
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Laser beam output P Laser reverse voltage V Monitor PD reverse voltage V Signal processing PD reverse voltage Operating ambient temperature Storage temperature T
O
R(LD)
R(mon)
V
R
T
opr stg
– 10 to +60 ˚C – 40 to +85 ˚C
1 2 3
4
4.8±0.1
5 6
0.8×5=4.0±0.2
(0.2)
(0.5)
3.0±0.2
0.25 Lead frame
2.55±0.2
Reference plane
SEC. X-O-Y
0.3 mW 2V
12 V 12 V
Index mark for No.1
pin on reverse side
11.2±0.2
8.2±0.2
+0
ø8.0
–0.05
O
Y
8.1±0.2
(Note): 1.Standard corner R=0.20 max.
2.Thickness of plate:Ni 1µm min.+Au 0.1µm min.
3.Thickness of hologram=2.0mm, n=1.519
(0.35)
(0.3)
12 11 10
X
9 8 7
Reference plane
Apparent emitting point
Apparent emitting point
Reference plane
1.33±0.2
0.78±0.2
0.50
Unit : mm
4.33±0.2
2.55±0.2
4.7±0.1
SEC. X-O-Y
Unit Characteristic Specifications (Tc = 25 ± 3˚C)
Parameter Symbol Conditions min typ max Unit
Threshold current I Operating current I Operating voltage V Laser beam output P Focus error signal amplitude Tracking error signal amplitude Focus error signal defocusing Tracking error signal symmetry Focus error signal pull-in range
*1
Measurements are made using the reference optical system during measurement and the radiant power measurement system on the hologram unit shown in Fig. 2.
*2
It should be noted that the RF signal amplitude in these specifications is denoted by IRF, and represents the amplitude of the 11T signal. As in the case described in *1, IRF is measured using the measurement system shown in Fig. 2.
*3
The definition is illustrated in Fig. 3.
*4
The definition is illustrated in Fig. 4.
*5
The definition is illustrated in Fig. 5.
*1
th
OP
OP
O
I
FE
I
TE
D
FO
B
TE
D
FE
CW 20 30 40 mA
*1,2
CW IRF = 10µA, VR = 5V 25 35 45 mA
*1,2
CW IRF = 10µA, VR = 5V 1.9 2.4 V
*1,2
IRF = 10µA, VR = 5V 0.15 0.22 mW
*1,3
IRF = 10µA, VR = 5V 7 10 13 µ A
*1,4
IRF = 10µA, VR = 5V 0.8 1.3 1.8 µA
*1,5
IRF = 10µA, VR = 5V – 8 + 8 %
*1,4
IRF = 10µA, VR = 5V – 30 + 30 %
*1,3
IRF = 10µA, VR = 5V 12 µm
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HUL7001 Hologram Unit
Characteristic Specifications for Semiconductor Laser, Monitor PD, and Signaling Processing PD
Parameter Symbol Conditions min typ max Unit
Semiconductor laser Oscillating wavelength λ Coherence λ Monitor PD and signal processing PD Monitor current I
Dark current
Capacitance between pinss
Shield frequency f
*6
Measurements are made using the radiant power measurement system on the hologram unit. The definition is presented in Fig. 2.
*7
Unless otherwise indicated, the values shown are per individual element.
*8
The subscript (mon) denotes the element (monitor PD).
*9
C
denotes the capacitance measured at pin No. 4 or 10 in the electrode connection diagram. C
t(RF1)
measured at pin No. 5 or 9 in the electrode connection diagram.
*6
L
P(mon)
I
I
D(mon)
C
t(RF1)
C
t(RF2)
CW IRF = 10µA, VR = 5V 775 790 805 nm
*6
CW IRF = 10µA, VR = 5V 0.5 0.9
*7
CW IRF = 10µA, VR = 5V 0.3 0.7 1.2 mA VR = 2.5V 0.2 3.0 nA
D
*8
VR = 5V 0.3 30 nA
*9
VR = 2.5V, f = 1MHz
*9
VR = 2.5V, RL = 50Ω 40 MHz
C
(Tc = 25±3˚C)
2pF 3pF
denotes the capacitance
t(RF2)
Connection Diagram (Fig. 1)
(a) Pin arrangement
Pin No.
(b) Chip structure
PD output current In : detecting element N (n : 1 to 10, N = P1 to P10 )
Monitor PD output current I received by Pmon element
Focus error signal FE = (I
Tracking error signal TE = (I
RF signal RF = I2+I3+I4+I7+I8+I
1 2 3 4 5 6
Pmon
P1
LD
P2 P3 P4 P5
Output current when light is received by light
Gritty face
Represents No.1 pin carved seal on reverse side
TOP VIEW
LD
:
P6 P7 P8 P9
P10
: Output current when light is
P (mon)
2+I4+I8
Disk-close FE > 0 Disk-far FE < 0
1+I6
The leading beam is the beam received by light detecting elements P1 and P6.
Semiconductor laser chip
: Monitor light detecting
Pmon
element
P1 ~ P10
: Signal-detection light­ detecting-elements
) – (I3+I7+I9)
) – (I5+I10)
9
12 11 10
9 8 7
Pin Description
Pin No.
1
Source voltage Applications pin 2 Monitor current output pin I 3
Tracking error signal output pin
RF and focus error signal 4
output pin
RF and focus error signal 5
output pin 6
Source voltage Applications pin 7
Source voltage Applications pin 8
Tracking error signal output pin
RF and focus error signal 9
output pin
RF and focus error signal
10
output pin
11 LD + Power supply pin
12 GND pin
Function Calculation
Electrode Connection Diagram
1,6,7
P1 P2 P3 P4 P5 P6 P7 P8 P9
)
(V
R
348910 2125
Pmon LD
P10
P (mon)
I1 + I
I
I2 + I
I5 + I
I7 + I
I
GND
6
3
4
10
9
8
11 LD+
2
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Hologram Unit HUL7001
Optical Block Diagram During Measurement (Fig. 2)
(a) Radiant power measurement system of hologram unit (HUL7001)
Hologram unit
(HUL7001)
PKG reference surface
(Note) The aperture and the light detecting element
are positioned perpendicular to the axis of the light emitted from the hologram unit; the optical axis is positioned so as to pass through the center of the aperture.
Optical axis
19.0mm
Light detecting element (ø10mm) or laser light input element of coherence measurement system
ø
3.1mm
aperture
The RF signal, focus error signal, and tracking error signal are measured using the above reference optical system and the equations shown in Fig. 1.
Focus Error Signal Amplitude and Pull-in
Range (Fig. 3)
Focus error signal
I
FE
Objective lens movement
D
FE
(b) Reference optical system during measurement
Apparent light emitting point
25.3mm
Collimator lens Objective lens
f = 25.3mm NA = 0.105
Actuator
f = 4.5mm NA = 0.45
Disk : A disk satisfying CD specifications is used.
Tracking Error Signal Amplitude and Pull-in
Range (Fig. 4)
Tracking error signal strength
Signal amplitude center ground level
+
B
0
–
A : Tracking signal amplitude B :
Difference between tracking signal
amplitude center and electrical center
A
Time
I
: Focus error signal amplitude
FE
D
: Focus error signal pull-in range
FE
Focus Error Signal Defocusing (Fig. 5)
High
Jitter
(ns)
Low
Focus error signal
+
Moving away from disk
Approaching disk
S
(DJ)
0
D
I
FE
J
–
In the diagram, point 0 is the point at which the focus error signal equals 0.
Tracking error signal amplitude I Tracking error signal symmetry B
DJ : Objective lens movement from position where focus error signal is 0 to jittering-best position.
S
: Amount of focus error signal at D
(D
)
J
IFE : Focus error signal amplitude
J
= A
TE
B
= ×100 (%)
TE
A
Objective lens movement (µA)
Focus error signal defocusing D
FO
S
(DJ)
=
I
EF
×100 (%)
(Definition of focus error signal defocusing) Amount of focus error signal at jitter-best position as a percentage of focus error signal amplitude (%)
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Page 4
HUL7001 Hologram Unit
Important LDHU Usage Information
Panasonic’s laser detector hologram unit (LDHU) has features of using a plastic package, and of inte­grating a low-current-operating, high-efficiency la­ser and a photodetector in order to reduce the size and weight of the optical pickup.
Please follow the instructions presented below to take advantage of this feature and ensure that the pickup is highly reliable.
1. Static Electricity
The semiconductor laser used in the LDHU is char­acteristically, especially sensitive to static electric­ity, in semiconductor devices. Therefore care must be taken in handling the semiconductor laser. If the laser receives a pulse which causes light to be emit­ted in excess of the maximum rating of the laser, the laser itself could be damaged by the optical energy.
Therefore it is very important to take measures to protect the LDHU from static electricity and surges when putting together assembly lines or when han­dling it during manufacturing processes.
(1) Check all drive circuitry, including the power sup-
ply. Take sufficient preventive measures to en­sure that, for example, spike currents generated when the power switch is turned on or off never exceed the absolute maximum ratings of the LDHU. Also insert appropriate protective circuits in the LDHU drive circuitry.
(2) Be careful not to allow static electricity to de-
stroy the LDHU while handling it. Effective mea­sures for protecting against static electricity in­clude body grounds (passing through 1MΩ), as well as conductive mats for the floor, conductive clothing, conductive shoes, and conductive con­tainers. The tips of soldering irons must be grounded. We recommend using ionizers, etc., especially around facilities and areas where static electricity is easily generated.
2. LDHU Heat-Release Design
The semiconductor laser, which is the light emit­ting device, naturally has a limited service life. This service life is shortened as the temperature is in­creased. Therefore the design should include suit­able heat-releasing measures. Heat release from the lead frame and the back of the package must be in­corporated into the design in order to improve heat­releasing capabilities. For assistance in evaluating heat-releasing capabilities (thermal resistance), please contact us.
3. Storing LDHU Units After Removal from Alumi­num-Laminated Bags
If supplies are stored prior to mounting for ex­tended periods of time in a high-humidity environ­ment, subsequent heating during solder mounting will cause moisture in the parts to vaporize. This may cause problems related to part characteristics.
In order to prevent moisture absorption, LDHU units are packaged in moistureproof aluminum-lami­nated bags which are sealed together with silica gel before shipping. After LDHU units are removed from these moistureproof bags, the mounting process should be completed quickly. Unused LDHU units which have been unsealed and require extended stor­age should be put back in their aluminum-laminated bags (along with the silicagel) and resealed.
The recommended environment for LDHU mount­ing is a temperature range of 5˚C to 35˚C and a rela­tive humidity range of 45% to75%. (To prevent ex­cessive humidity and because static electricity oc­curs more easily if the humidity is too low.)
(3) The laser may also be destroyed by abnormal
pulses from nearby equipment. Therefore fluo­rescent lights and measuring equipments should not be turned on or off near the laser.
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Page 5
Hologram Unit HUL7001
4. Important Information Regarding Soldering
Special plastics are used in the LDHU package
and hologram. Therefore only the leads (pins) should be heated (during soldering iron, dip, etc.), and soldering time should be short. Total heating methods such as reflow soldering should be avoided. (This device is gold-plated to ensure good solder adhesion, so a short soldering time is sufficient.) It is also recommended that a heat sink or other means be used to improve the package’s heat-releasing effects in order to pre­vent the package from becoming hot as a result of heat transfer and radiation even when the leads are heated.
Soldering location
A
A
A : Make sure there is a gap of at least 1mm.
Soldering temperature and time
Temperature : 260˚C maximum Time : 5 seconds maximum
5. Flux cleaning method
Alcohol is recommended as a solvent for flux clean-
ing. Chlorine base solvents in particular are a cause of lead corrosion and device deterioration. Petroleum base solvents should be avoided since they deteriorate the adhesive between the holo­gram and package.
6. Mechanical stress
(1) Pressure on the package
The LDHU package is made thin in order to re­duce its size. Therefore, pressure on the package resulting of heat release, etc. may cause problems such as a change in the package shape or changes to its characteristics. In the point pressure appli­cation, force should be limited to 1kgf (9.8N) or less, but please design so that the area pressure application can be adopted as much as possible.
(2) Lead formation and cutting
In cases where lead formation and cutting are re­quired, these actions must be performed at nor­mal temperatures prior to soldering. Machining steps performed at high temperatures immediately after soldering, or after the solder has hardened should be avoided. In addition, steps should be taken to ensure that excessive mechanical stress is not applied during lead formation and cutting. Special care should be taken to avoid stress on the lead bases of the package, as this may create problems such as chipping the resin.
7. Other issues
(1) The surface of the hologram is very important for
light emission and light detecting. Therefore care should be taken to ensure that there are no finger­prints on the surface, residual flux after solder­ing, or adhering dust.
(2) V iewing the laser beam with the naked eye is ex-
tremely dangerous and may result in blindness. Do not look directly at the laser while it is operat­ing.
In addition, ultrasonic cleaning should be avoided
since the device is hollow. Care should be taken in brushing the hologram surface, as this may scratch the back side.
(3) The products listed in this document are intended
for use in standard applications, i.e., general elec­tronic devices (such as office equipment, measur­ing equipment, and consumer electronics prod­ucts). Customers considering applications involv­ing special quality and reliability requirements and carrying a risk of loss of human life or bodily dam­age in the event of an accident or malfunction, or specific applications (such as aerospace applica­tions, transportation equipment, combustion equipment, and safety devices), and customers considering applications other than the standard applications intended by us should contact our sales office before using these products.
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