Datasheet HUF75345S3 Datasheet (Fairchild Semiconductor)

HUF75345G3, HUF75345P3, HUF75345S3S

75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel pow er MOSFETs are manufactured using the innovat ive Ul traFET® pr ocess. This

advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outsta ndi ng performance. This device i s c apa ble of withstanding hi gh ene r gy in the a valanche mode and the diode exhibits very low reverse recove ry time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75345.

Features

• 75A, 55V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™ Models

- Thermal Impedance SPICE and SABER Models Available on the WEB at: www.fairchildsemi.com

• Pea k Cu rrent vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

Symbol

Packaging

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75345G3 TO-247 75345G HUF75345P3 TO-220AB 75345P HUF75345S3S TO-263AB 75345S

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75345S3ST.

D

G

S

JEDEC STYLE TO-247 JEDEC TO-220AB

JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN (TAB)

DRAIN

SOURCE

GATE

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

(FLANGE)

Data Sheet December 2001

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

55 V

Drain to Gate Voltage (R

GS

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

55 V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

±20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

DM

75

Figure 4

A

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

AS

Figure 6

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

325

2.17

W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

J

, T

STG

-55 to 175

o

C

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

L

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

pkg

300 260

o

C

o

C

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess onl y rating and operation o f the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. T

J

= 25oC to 150oC.

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V (Figure 11) 55 - - V

Zero Gate Voltage Drain Current I

DSS

VDS = 50V, VGS = 0V - - 1 µA V

DS

= 45V, VGS = 0V, TC = 150oC--250µA

Gate to Source Leakage Current I

GSS

VGS = ±20V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V

GS(TH)VGS

= VDS, ID = 250µA (Figure 10) 2 - 4 V

Drain to Source On Resistance r

DS(ON)ID

= 75A, VGS = 10V (Figure 9) - 0.006 0.007 W

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R

θJC

(Figure 3) - - 0.46

o

C/W

Thermal Resistance Junction to Ambient R

θJA

TO-247 - - 30

o

C/W

TO-220, TO-263 - - 62

o

C/W

SWITCHING SPECIFICATIONS (V

GS

= 10V)

Turn-On Time t

ON

VDD = 30V, ID ≅ 75A, R

L

= 0.4Ω, VGS = 10V,

R

GS

= 2.5Ω

--145ns

Turn-On Delay Time t

d(ON)

-20- ns

Rise Time t

r

-75- ns

Turn-Off Delay Time t

d(OFF)

-45- ns

Fall Time t

f

-30- ns

Turn-Off Time t

OFF

--115ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q

g(TOT)VGS

= 0V to 20V VDD = 30V,

I

D

≅ 75A,

R

L

= 0.4Ω

I

g(REF)

= 1.0mA

(Figure 13)

- 220 275 nC

Gate Charge at 10V Q

g(10)

VGS = 0V to 10V - 125 165 nC

Threshold Gate Charge Q

g(TH)

VGS = 0V to 2V - 6.8 10 nC

Gate to Source Gate Charge Q

gs

-14-nC

Gate to Drain “Miller” Charge Q

gd

-58-nC

HUF75345G3, HUF75345P3, HUF75345S3S

CAPACITANCE SPECIFICATIONS

Input Capacitance C

ISS

VDS = 25V, VGS = 0V, f = 1MHz (Figure 12)

- 4000 - pF

Output Capacitance C

OSS

- 1450 - pF

Reverse Transfer Capacitance C

RSS

- 450 - pF

Electrical Specifications

TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

ISD = 75A - - 1.25 V

Reverse Recovery Time t

rr

ISD = 75A, dISD/dt = 100A/µs - - 110 ns

Reverse Recovered Charge Q

RR

ISD = 75A, dISD/dt = 100A/µs - - 225 nC

Typical Performance Curves

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

TC, CASE TEMPERATURE (oC)

POWER DISSIPA TION MULTIPLIER

0

0 25 50 75 100 150

0.2

0.4

0.6

0.8

1.0

1.2

125 17

5

I

D

, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

20

40

60

80

50 75 100 125 150 17

5

0

25

t, RECTANGULAR PULSE DURATION (s)

SINGLE PULSE

NOTES: DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJC

x R

θJC

+ T

C

P

DM

t

1

t

2

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.01

0.02

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-5

0.1

1

2

0.01

Z

θJC

, NORMALIZED

THERMAL IMPEDANCE

HUF75345G3, HUF75345P3, HUF75345S3S

FIGURE 4. PEAK CURRENT CAPABILITY

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. TRANSFER CHARACTERISTICS

Typical Performance Curves

(Continued)

10

1

10

0

10

-1

10

-2

10

-3

10

-4

10

-5

50

100

2000

TC = 25oC

I = I

25

175 - T

C

150

FOR TEMPERATURES ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

VGS = 10V

I

DM

, PEAK CURRENT (A)

t, PULSE WIDTH (s)

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

1000

VGS = 20V

10

100

1000

10 100

1

120

0

VDS, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

TJ = MAX RATED T

C

= 25oC

100µs

10ms

1ms

V

DSS(MAX)

= 55V

LIMITED BY r

DS(ON)

AREA MAY BE

OPERATION IN THIS

1 10 100

100

0.01

1000

10

I

AS

, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms)

tAV = (L)(IAS)/(1.3*RATED BV

DSS

- VDD)

If R = 0

If R ≠ 0 t

AV

= (L/R)ln[(IAS*R)/(1.3*RATED BV

DSS

- VDD) +1]

STARTING TJ = 25oC

STARTING TJ = 150oC

0.1

0

30

60

0123

4

90

120

I

D

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 6V

VGS = 10V

V

GS

= 20V

PULSE DURATION = 80µs T

C

= 25oC

VGS = 5V

150

VGS = 7V

DUTY CYCLE = 0.5% MAX

175oC

0 3.0 4.5 6.0 7.51.5

0

30

60

90

120

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

-55oC

25oC

V

DD

= 15V

150

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

HUF75345G3, HUF75345P3, HUF75345S3S

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 10. NORMALIZED GATE T HRESHOLD V OLTA GE vs

JUNCTION TEMPERATURE

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.

FIGURE 13. GATE CHARGE WA VEFORMS FOR CONSTANT GATE CURRENT

Typical Performance Curves

(Continued)

0.5

1.0

1.5

2.0

2.5

-80 -40 0 40 80 120 160

NORMALIZED DRAIN TO SOURCE

TJ, JUNCTION TEMPERATURE (oC)

ON RESISTANCE

PULSE DURATION = 80µs, VGS = 10V, ID = 75A

200

DUTY CYCLE = 0.5% MAX

-80 -40 0 40 80 120 160

0.4

0.6

0.8

1.0

1.2

NORMALIZED GATE

TJ, JUNCTION TEMPERATURE (oC)

THRESHOLD VOLTAGE

VGS = VDS, ID = 250µA

200

1.2

1.1

1.0

0.9

0.8

-80 -40 0 40 80 120 160 T

J

, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

ID = 250µA

200

1.3

4000

2000

0

01020304050

C, CAPACITANCE (pF)

3000

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

1000

C

ISS

C

OSS

C

RSS

60

5000

6000

7000

V

GS

= 0V, f = 1MHz

C

ISS

= CGS + C

GD

C

RSS

= C

GD

C

OSS

≈ CDS + C

GD

10

8

6

4

0

V

GS

, GATE TO SOURCE VOLTAGE (V)

VDD = 30V

2

75 100 1250

Q

g

, GATE CHARGE (nC)

25 50

ID = 75A I

D

= 55A

I

D

= 35A

I

D

= 20A

WAVEFORMS IN DESCENDING ORDER:

HUF75345G3, HUF75345P3, HUF75345S3S

Test Circuits and Waveforms

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORM

FIGURE 18. SWITCHING TIME TEST CIRCUIT FIGURE 19. RESISTIVE SWITCHING WAVEFORMS

t

P

V

GS

0.01Ω

L

I

AS

+

-

V

DS

V

DD

R

G

DUT

VARY t

P

TO OBTAIN

REQUIRED PEAK I

AS

0V

V

DD

V

DS

BV

DSS

t

P

I

AS

t

AV

0

R

L

V

GS

+

-

V

DS

V

DD

DUT

I

G(REF)

V

DD

Q

g(TH)

V

GS

= 2V

Q

g(10)

VGS = 10V

Q

g(TOT)

V

GS

= 20

V

DS

V

GS

I

g(REF)

0

Q

gs

Q

gd

V

GS

R

L

R

GS

DUT

+

-

V

DD

V

DS

V

GS

t

ON

t

d(ON)

t

r

90%

10%

V

DS

90%

10%

t

f

t

d(OFF)

t

OFF

90%

50%

10%

PULSE WIDTH

V

GS

0

HUF75345G3, HUF75345P3, HUF75345S3S

PSPICE Electrical Model

.SUBCKT HUF75345 2 1 3 ; rev 3 Feb 99

CA 12 8 5.55e-9 CB 15 14 5.55e-9 CIN 6 8 3.45e-9

DBODY 7 5 DBODYMOD DBREAK 5 11 D B REAK MOD DPLCAP 10 5 DPLCAPMOD

EBREAK 11 7 17 18 56.7 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1

IT 8 17 1 LDRAIN 2 5 1e-9

LGATE 1 9 2.6e-9 LSOURCE 3 7 1.1e-9 KGATE LSOURCE LGATE 0.0085

MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD

RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 1e-4 RGATE 9 20 0.36 RLDRAIN 2 5 10 RLGATE 1 9 26 RLSOURCE 3 7 11 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 3.15e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTE MPMOD 1

S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD

VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*500),3.5))} .MODEL DBODYMOD D (IS = 6e-12 RS = 1.4e-3 IKF = 20 XTI = 5 TRS1 = 2.75e-3 TRS2 = 5.0e-6 CJO = 5.5e-9 TT = 5.9e-8 M = 0.5 VJ = 0.75)

.MODEL DBREAKMOD D (RS = 2.8e-2 IKF = 3 0TRS1 = -4.0e- 3TRS2 = 1.0e-6) .MODEL DPLCAPMOD D (CJO = 6.75e- 9IS = 1e-30 M = 0.88 VJ = 1.45 FC = 0.5) .MODEL MMEDM OD NMOS (VTO = 2.93 KP = 13.75 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.36) .MODEL MSTROMOD NMOS (VT O = 3.23 KP = 96 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u Lambda = 0.06) .MODEL MWEAKMOD NMOS (VTO = 2.35 KP =0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.6) .MODEL RBREAKMOD RES (TC1 = 8.0e- 4TC2 = 4.0e-6) .MODEL RDRAINMOD RES (TC1 = 1.5e-1 TC2 = 6.5e-4) .MODEL RSLCMOD RES (TC1 = 1.0e-4 TC2 = 1.05e-6) .MODEL RSOURCEMOD RES (TC1 = 1.0e-3 TC2 = 0) .MODEL RVTHRESMOD RES (TC1 = -1.5e-3 TC2 = -2.6e-5) .MODEL RVTEMPMOD RES (TC1 = -2.75e- 3TC2 = 1.45e-6)

.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -9.00 VOFF= -4.00) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.00 VOFF= -9.00) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.00 VOFF= 0.50) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.50 VOFF= 0.00)

.ENDS

NOTE: For further di scussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featu ring Global

Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.

18 22

+

-

6 8

+

-

5

51

+

-

19

8

+

-

17 18

6 8

+

-

5 8

+

-

RBREAK

RVTEMP

VBAT

RVTHRES

IT

17 18

19

22

12

13

15

S1A

S1B

S2A

S2B

CA

CB

EGS EDS

14

8

13

8

14 13

MWEAK

EBREAK

DBODY

RSOURCE

SOURCE

11

7

3

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES

16

21

8

MMED

MSTRO

DRAIN

2

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ESLC

RSLC1

10

5

51

50

RSLC2

1

GATE

RGATE

EVTEMP

9

ESG

LGATE

RLGATE

20

+

-

+

-

+

-

6

HUF75345G3, HUF75345P3, HUF75345S3S

SABER Electrical Model

REV 3 February 1999 template huf75345 n2, n1, n3

electrical n2, n1, n3 { var i iscl d..model dbodymod = (is = 6e-12, xti = 5, cjo = 5.5e-9, tt = 5.9e-8, m=0.5, vj=0.75) d..model dbreakmod = () d..model dplcapmod = (cjo = 6.75e-9, is = 1e-3 0, m = 0.88, vj = 1.45,fc=0.5) m..model mmedmod = (type=_n, vto = 2.93, kp = 13.75, is = 1e-30, tox = 1) m..model mstrongmod = (type=_n, vto = 3.23, kp = 96, is=1e-30,tox=1, lambda = 0.06) m..model mweakmod = (type=_n, vto = 2.35, kp = 0.02, is = 1e-30, tox = 1) sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -9, voff = -4) sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -4, voff = -9) sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0, voff = 0.5) sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = 0)

c.ca n12 n8 = 5.55e-9 c.cb n15 n14 = 5.55e-9 c.cin n6 n8 = 3.45e-9

d.dbody n7 n71 = model=dbodymod d.dbreak n72 n11 = model=dbreakmod d.dplcap n10 n5 = model=dplcapmod

i.it n8 n17 = 1 l.ldrain n2 n5 = 1e-9

l.lgate n1 n9 = 2.6e-9 l.lsource n3 n7 = 1.1e-9 k.k1 i(l.lgate) i(l.lsource) = l(l.lgate), l(l.lsource), 0.0085

m.mmed n16 n6 n8 n8 = model=mmedmod, l = 1u, w = 1u m.mstrong n16 n6 n8 n8 = model=mstrongmod, l = 1u, w = 1u m.mweak n16 n21 n8 n8 = model=mweakmod, l = 1u, w = 1u

res.rbreak n17 n18 = 1, tc1 = 8e-4, tc2 = 4e-6 res.rdbody n71 n5 = 1.4e-3, tc1 = 2.75e-3, tc2 = 5e-6 res.rdbreak n72 n5 = 2.8e-2, tc1 = -4e-3, tc2 = 1e-6 res.rdrain n50 n16 = 1e-4, tc1 = 1.5e-1, tc2 = 6.5e-4 res.rgate n9 n20 = 0.36 res.rldrain n2 n5 = 10 res.rlgate n1 n9 = 26 res.rlsource n3 n7 = 11 res.rslc1 n5 n51 = 1e-6, tc1 = 1e-4, tc2 = 1.05e-6 res.rslc2 n5 n50 = 1e3 res.rsource n8 n7 = 3.15e-3, tc1 = 1e-3, tc2 = 0 res.rvtemp n18 n19 = 1, tc1 = -2.75e-3, tc2 = 1.45e-6 res.rvthres n22 n 8 = 1, tc1 = -1.5e-3, tc2 = -2.6e-5

spe.ebreak n11 n7 n17 n18 = 56.7 spe.eds n14 n8 n5 n8 = 1 spe.egs n13 n8 n6 n8 = 1 spe.esg n6 n10 n6 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 spe.evthres n6 n21 n19 n8 = 1

sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod

v.vbat n22 n19 = dc = 1 equations {

i (n51->n50) + = iscl iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v ( n5,n51))))*((abs(v(n5,n51)*1e6/500))** 3.5)) } }

18 22

+

-

6 8

+

-

19

8

+

-

17 18

6 8

+

-

5 8

+

-

RBREAK

RVTEMP

VBAT

RVTHRES

IT

17 18

19

22

12

13

15

S1A

S1B

S2A

S2B

CA

CB

EGS EDS

14

8

13

8

14 13

MWEAK

EBREAK

DBODY

RSOURCE

SOURCE

11

7

3

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES

16

21

8

MMED

MSTRO

DRAIN

2

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ISCL

RSLC1

10

5

51

50

RSLC2

1

GATE

RGATE

EVTEMP

9

ESG

LGATE

RLGATE

20

+

-

+

-

+

-

6

RDBODY

RDBREAK

72

71

HUF75345G3, HUF75345P3, HUF75345S3S

SPICE Thermal Model

REV 5 February 1999

HUF75345

CTHERM1 th 6 6.3e-3 CTHERM2 6 5 1.5e-2 CTHERM3 5 4 2.0e-2 CTHERM4 4 3 3.0e-2 CTHERM5 3 2 8.0e-2 CTHERM6 2 tl 1.5e-1

RTHERM1 th 6 5.0e-3 RTHERM2 6 5 1.8e-2 RTHERM3 5 4 5.0e-2 RTHERM4 4 3 8.5e-2 RTHERM5 3 2 1.0e-1 RTHERM6 2 tl 1.1e-1

SABER Thermal Model

SABER thermal model HUF75345 template thermal_model th tl

thermal_c th, tl { ctherm.ctherm1 th 6 = 6.3e-3 ctherm.ctherm2 6 5 = 1.5e-2 ctherm.ctherm3 5 4 = 2.0e-2 ctherm.ctherm4 4 3 = 3.0e-2 ctherm.ctherm5 3 2 = 8.0e-2 ctherm.ctherm6 2 tl = 1.5e-1

rtherm.rtherm1 th 6 = 5.0e-3 rtherm.rtherm2 6 5 = 1.8e-2 rtherm.rtherm3 5 4 = 5.0e-2 rtherm.rtherm4 4 3 = 8.5e-2 rtherm.rtherm5 3 2 = 1.0e-1 rtherm.rtherm6 2 tl = 1.1e-1 }

RTHERM4

RTHERM6

RTHERM5

RTHERM3

RTHERM2

RTHERM1

CTHERM4

CTHERM6

CTHERM5

CTHERM3

CTHERM2

CTHERM1

tl

2

3

4

5

6

th

JUNCTION

CASE

HUF75345G3, HUF75345P3, HUF75345S3S